专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012170994A3 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES 审中-公开
标题翻译：氮化镓半导体基板上的低驱动发光二极管结构
公开(公告)号：WO2012170994A3
公开(公告)日：2014-05-01
申请号：PCT/US2012041872
申请日：2012-06-11
申请人： UNIV CALIFORNIA , NAKAMURA SHUJI , DENBAARS STEVEN P , TANAKA SHINICHI , FEEZELL DANIEL F , ZHAO YUJI , PAN CHIH-CHIEN
发明人： NAKAMURA SHUJI , DENBAARS STEVEN P , TANAKA SHINICHI , FEEZELL DANIEL F , ZHAO YUJI , PAN CHIH-CHIEN
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L33/0062 , H01L33/0075 , H01L33/16 , H01L33/32
摘要： A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.
摘要翻译：通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL）地区。本发明还包括制造这种装置的方法。

2. 发明申请

WO2012149531A3 HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE 审中-公开
标题翻译：用于氮化镓衬底的二极体（20-2-1）平面上制备的III族氮化物光电子器件的高吸收率和高极化比
公开(公告)号：WO2012149531A3
公开(公告)日：2014-05-08
申请号：PCT/US2012035798
申请日：2012-04-30
申请人： UNIV CALIFORNIA , ZHAO YUJI , TANAKA SHINICHI , HUANG CHIA-YEN , FEEZELL DANIEL F , SPECK JAMES S , DENBAARS STEVEN P , NAKAMURA SHUJI
发明人： ZHAO YUJI , TANAKA SHINICHI , HUANG CHIA-YEN , FEEZELL DANIEL F , SPECK JAMES S , DENBAARS STEVEN P , NAKAMURA SHUJI
IPC分类号： H01L33/02
CPC分类号： H01L33/16 , H01L33/0075 , H01L33/32
摘要： A Group-Ill nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.
摘要翻译：在氮化镓（GaN）衬底的半极（20-2-1）平面上制造的III族氮化物光电子器件的特征在于高的铟吸收和高的偏振比。

3. 发明申请

WO2008137674A3 BACKLIGHT DEVICE 审中-公开
标题翻译：背光装置
公开(公告)号：WO2008137674A3
公开(公告)日：2011-07-14
申请号：PCT/US2008062416
申请日：2008-05-02
申请人： TEXAS INSTRUMENTS INC , TANAKA SHINICHI
发明人： TANAKA SHINICHI
IPC分类号： G09G3/36 , H05B37/02
CPC分类号： H05B33/0845 , G09G3/3406 , G09G3/3413 , G09G2320/0626 , G09G2330/021 , G09G2330/12 , H05B33/0818 , H05B33/0827
摘要： A backlight device that is not affected by offset voltage. Driving transistor (41) operates such that current flows in LED circuit (11), and the detection voltage generated by current detector (42) and the reference voltage are input alternately to first input transistor (30a) and second input transistor (30b) of amplifier (20). Brightness adjusting switch (43) operates such that when driving transistor is turned OFF during the OFF period of LED circuit, for example, during the horizontal blanking interval or vertical blanking interval, the detection voltage and the reference voltage are swapped, so that the average voltage generated in current detector is equal to the reference voltage, and the effect of the offset voltage can be eliminated.
摘要翻译：不受偏移电压影响的背光装置。驱动晶体管（41）工作，使得电流在LED电路（11）中流动，并且由电流检测器（42）产生的检测电压和参考电压交替地输入到第一输入晶体管（30a）和第二输入晶体管（30b）放大器（20）。亮度调整开关43的动作使得在LED电路的关闭期间例如在水平消隐间隔或垂直消隐间隔期间，当驱动晶体管截止时，检测电压和参考电压被交换，使得平均电流检测器中产生的电压等于参考电压，可以消除偏移电压的影响。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式