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1. 发明申请

WO2009141459A2 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
标题翻译：制造光伏电池结构的方法
公开(公告)号：WO2009141459A2
公开(公告)日：2009-11-26
申请号：PCT/EP2009/061576
申请日：2009-09-07
申请人： OERLIKON SOLAR AG, TRUEBBACH , MEIER, Johannes , BRONNER, Markus , KUPICH, Markus , ROSCHEK, Tobias , GOLDBACH, Hanno
发明人： MEIER, Johannes , BRONNER, Markus , KUPICH, Markus , ROSCHEK, Tobias , GOLDBACH, Hanno
IPC分类号： H01L31/076 , H01L31/077
CPC分类号： H01L31/1824 , H01L31/076 , H01L31/077 , H01L31/202 , H01L31/208 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).
摘要翻译：在制造光伏电池的框架中，硅化合物层（3）沉积在结构（1）上。尚未覆盖的表面（3a）在另外含有掺杂剂（D）的预定含氧（O 2）气氛中处理。由此，硅化合物层被氧化并掺杂在薄表面区域（5）中。

2. 发明申请

WO2012028684A2 METHOD FOR THIN FILM SILICON PHOTOVOLTAIC CELL PRODUCTION 审中-公开
标题翻译：薄膜光伏电池生产方法
公开(公告)号：WO2012028684A2
公开(公告)日：2012-03-08
申请号：PCT/EP2011/065099
申请日：2011-09-01
申请人： OERLIKON SOLAR AG, TRUEBBACH , GOLDBACH, Hanno , ROSCHEK, Tobias , KRAVETS, Roman
发明人： GOLDBACH, Hanno , ROSCHEK, Tobias , KRAVETS, Roman
IPC分类号： H01L31/076
CPC分类号： H01L31/0236 , H01L31/022483 , H01L31/03685 , H01L31/056 , H01L31/075 , H01L31/076 , H01L31/1824 , H01L31/202 , Y02E10/52 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： This invention relates to a solar cell arrangement and to a process for manufacturing thin film silicon-based solar cells. It particular addresses the topic of reducing the active layer thicknesses significantly by advanced light trapping. The invention proposes a solar cell arrangement with an extent > 1.4 m2 in tandem configuration comprising an a-Si Cell (4) and a μc-Si cell (10), the absorber layer of the a-Si cell (4) having a thickness of 210nm ± 20 nm, the absorber layer of the μc-Si cell (10) having a thickness of 900 nm ± 200 nm.
摘要翻译：本发明涉及一种太阳能电池装置及其制造薄膜硅基太阳能电池的方法。具体涉及通过先进的光捕获来显着降低有源层厚度的主题。本发明提出了一种串联配置的，具有a-Si电池（4）和μc-Si电池（10）的串联配置的> 1.4m2的太阳能电池装置，a-Si电池（4）的吸收层具有厚度为210nm±20nm，μc-Si电池（10）的吸收层的厚度为900nm±200nm。

3. 发明申请

WO2011076466A2 THIN-FILM SILICON TANDEM SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜硅胶太阳能电池及其制造方法
公开(公告)号：WO2011076466A2
公开(公告)日：2011-06-30
申请号：PCT/EP2010/066295
申请日：2010-10-28
申请人： OERLIKON SOLAR AG, TRUEBBACH , ROSCHEK, Tobias , GOLDBACH, Hanno
发明人： ROSCHEK, Tobias , GOLDBACH, Hanno
IPC分类号： H01L31/075
CPC分类号： H01L31/075 , H01L31/076 , Y02E10/548
摘要： The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped μc-Si:H deposited using PECVD; and wherein said second p-i-n junction comprises in the following order a layer of p-doped μc-Si:H deposited using PECVD; a layer of substantially intrinsic μc-Si:H deposited using PECVD; and a second layer of n-doped a-Si:H deposited using PECVD. The photovoltaic converter panel comprises at least one such photovoltaic cell.
摘要翻译：光伏电池包括以下列顺序沉积在透明基板上：第一导电氧化物层; 第一个p-i-n结; 第二个p-i-n结; 第二导电氧化物层，其中所述第一导电氧化物层基本上是透明的，并且包括低压化学气相沉积的ZnO层; 并且所述第二导电氧化物层包括至少部分透明的低压化学气相沉积ZnO层; 并且其中所述第一pin结包括以下顺序：使用PECVD沉积的p掺杂的a-Si：H层，并且在其面向所述第二pin结的端部区域具有比在其面向所述第二pin结的端部区域更高的带隙第一导电氧化物层; 使用PECVD沉积的a-Si：H的缓冲层，而不自愿添加掺杂剂; 使用PECVD沉积的基本上本征的a-Si：H层; 使用PECVD沉积的n掺杂a-Si：H的第一层; 和使用PECVD沉积的n掺杂的μc-Si：H层; 并且其中所述第二p-i-n结以以下顺序包括使用PECVD沉积的p掺杂的μc-Si：H层; 使用PECVD沉积的基本上固有的μc-Si：H层; 以及使用PECVD沉积的n掺杂的a-Si：H的第二层。光伏转换器面板包括至少一个这样的光伏电池。

4. 发明申请

WO2010012674A3 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE 审中-公开
公开(公告)号：WO2010012674A3
公开(公告)日：2010-02-04
申请号：PCT/EP2009/059637
申请日：2009-07-27
申请人： OERLIKON SOLAR IP AG, TRUEBBACH , KUPICH, Markus , MEIER, Johannes , BENAGLI, Stefano , ROSCHEK, Tobias
发明人： KUPICH, Markus , MEIER, Johannes , BENAGLI, Stefano , ROSCHEK, Tobias
IPC分类号： H01L31/18
摘要： In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.

5. 发明申请

WO2010020469A2 PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL 审中-公开
标题翻译：光伏电池及制造光伏电池的方法
公开(公告)号：WO2010020469A2
公开(公告)日：2010-02-25
申请号：PCT/EP2009/058695
申请日：2009-07-08
申请人： OERLIKON SOLAR IP AG, TRUEBBACH , GOLDBACH, Hanno , ROSCHEK, Tobias , BENAGLI, Stefano , MEREU, Bogdan
发明人： GOLDBACH, Hanno , ROSCHEK, Tobias , BENAGLI, Stefano , MEREU, Bogdan
IPC分类号： H01L31/20
CPC分类号： H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： A photovoltaic cell comprises an electrode layer (1 b ) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7 b ). There follows a contact layer (11 b ) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11 b ). Subsequently to the first type doped amorphous silicon compound layer (2 b ) there follows a layer of intrinsic type silicon compound (3 b ) and a layer of second type doped silicon compound (5 b ).
摘要翻译：光伏电池包括透明导电氧化物的电极层（1 b），其沉积在透明载体衬底（7 b >）。接着是第一类掺杂非晶硅的接触层（11b），其厚度最多为10nm。接下来是第一类掺杂非晶硅化合物的层（26），其带隙大于被寻址的接触层（11b）的材料的带隙。在第一类掺杂非晶硅化合物层（2θ）之后，接着是一层本征型硅化合物（3'b）和一层第二型掺杂硅化合物（5 <子> b'/子>）。

6. 发明申请

WO2004076713A1 VERFAHREN ZUR ABSCHEIDUNG VON SILIZIUM 审中-公开
标题翻译：用于分离硅的
公开(公告)号：WO2004076713A1
公开(公告)日：2004-09-10
申请号：PCT/DE2004/000066
申请日：2004-01-20
申请人： FORSCHUNGSZENTRUM JÜLICH GMBH , ROSCHEK, Tobias , RECH, Bernd
发明人： ROSCHEK, Tobias , RECH, Bernd
IPC分类号： C23C16/24
CPC分类号： H01L21/0262 , C23C16/24 , C23C16/45557 , C23C16/505 , H01L21/02532 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： Das erfindungsgemässe Verfahren zur Abscheidung von Silizium auf einem Substrat legt in der Phasmakammer zunächst ein reaktives siliziumhaltiges Gas und Wasserstoff vorstartet und dann das Plasma. Nach dem Plasmastart wird der Plasmakammer alternativ kontinuierlich nur reaktives siliziumhaltiges Gas oder eine Gasmischung mit Wasserstoff zugeführt, und gleichzeitig das in der Kammer vorliegende Gasgemisch zumindest teilweise aus der Kammer abgeleitet. In Anwesenheit von Wasserstoff scheidet sich dabei homogen mikrokristallines Silizium auf dem Substrat von Anfang an ab.
摘要翻译：对于放置在第一Phasmakammer反应性含硅气体和氢气的基板上沉积硅的本发明方法突出固化，然后等离子体。之后开始等离子体腔室的等离子体交替地连续供给反应性仅含硅气体或氢气的气体混合物，同时至少部分地衍生，本气体混合物在腔室流出腔室。在氢的存在是微晶硅，同时从一开始就在基板上均匀地沉积。

7. 发明申请

WO2009152854A1 METHOD FOR LARGE-SCALE MANUFACTURING OF PHOTOVOLTAIC CELLS FOR A CONVERTER PANEL AND PHOTOVOLTAIC CONVERTER PANEL 审中-公开
标题翻译：用于转换器面板和光电转换器面板的光电池的大规模制造方法
公开(公告)号：WO2009152854A1
公开(公告)日：2009-12-23
申请号：PCT/EP2008/057716
申请日：2008-06-18
申请人： OERLIKON TRADING AG TRUEBBACH , LEPORI, Daniel , ROSCHEK, Tobias , KROLL, Ulrich
发明人： LEPORI, Daniel , ROSCHEK, Tobias , KROLL, Ulrich
IPC分类号： H01L31/072 , H01L31/075
CPC分类号： H01L31/076 , H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound (2) at least one of the adjacent layers (3, 1) of doped silicon material is conceived as a an amorphous layer.
摘要翻译：为了改善在本征硅化合物（2）的微晶层的光伏电池的各个转换器面板的大规模工业制造，掺杂硅材料的至少一个相邻层（3,1）的至少一个是构想为非晶层。

8. 发明申请

WO2009127709A2 ASSEMBLY LINE FOR PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：光伏器件组装线
公开(公告)号：WO2009127709A2
公开(公告)日：2009-10-22
申请号：PCT/EP2009/054568
申请日：2009-04-16
申请人： OERLIKON TRADING AG, TRÜBBACH , HUEGLI, Andreas , KOEPFLI, Reto , ROSCHEK, Tobias , SCHWARZENEGGER, Bernd , UNGAR, Adolf , KLUTH, Oliver , MOHR, Michael
发明人： HUEGLI, Andreas , KOEPFLI, Reto , ROSCHEK, Tobias , SCHWARZENEGGER, Bernd , UNGAR, Adolf , KLUTH, Oliver , MOHR, Michael
IPC分类号： H01L31/18 , H01L31/20
CPC分类号： H01L31/1876 , H01L31/1824 , H01L31/1836 , H01L31/1852 , Y02E10/544 , Y02E10/545 , Y02P70/521 , Y10T29/5313
摘要： The present application provides a method for the production of photovoltaic devices, preferably tandem solar cells. The method comprises the steps of: Providing at least one substrate comprising a front contact; and depositing at least a first semiconductor stack onto the substrate to produce a photo-voltaic device; and comprises at least two of the steps of: applying a back contact to the photovoltaic device; contacting of the photovoltaic device; removal of unnecessary material from the edge regions of the photovoltaic device; encapsulation; cross-contacting; and/or framing of the photovoltaic device, wherein the substrate is continuously or semi-continuous Iy moved from one step of the method to the next step of the method. The present application furthermore provides a system to carry out the method of the invention.
摘要翻译：本申请提供了一种生产光伏器件，优选串联太阳能电池的方法。该方法包括以下步骤：提供至少一个包括前触点的基板; 以及将至少第一半导体堆叠沉积到所述衬底上以产生光伏器件; 并且包括以下步骤中的至少两个：将后接触施加到所述光伏器件; 光电器件的接触; 从光伏器件的边缘区域去除不需要的材料; 封装; 交叉接触; 和/或框架，其中基片从该方法的一个步骤连续或半连续移动到该方法的下一步骤。本申请还提供了一种执行本发明的方法的系统。

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