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1. 发明申请

WO2009120894A2 IMPROVED MAGNETIC SENSOR DESIGN FOR SUPPRESSION OF BARKHAUSEN NOISE 审中-公开
标题翻译：改进的磁性传感器设计，用于抑制BARKHAUSEN噪声
公开(公告)号：WO2009120894A2
公开(公告)日：2009-10-01
申请号：PCT/US2009038448
申请日：2009-03-26
申请人： MATHER PHILLIP , CHUNG YOUNG SIR , ENGEL BRADLEY N , EVERSPIN TECHNOLOGIES INC
发明人： MATHER PHILLIP , CHUNG YOUNG SIR , ENGEL BRADLEY N
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , Y10T428/1107
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (202-205), each of which includes a magnetic field pulse generator (e.g., 414) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g., 411) to eliminate micromagnetic domain switches during measurements of small magnetic fields.
摘要翻译：半导体工艺和装置从仅需要两个不同的钉扎轴（206,216）的两个差分传感器配置（201,211）提供高性能磁场传感器，其中每个差分传感器（例如，201）由惠斯通具有四个非屏蔽MTJ传感器（202-205）的桥结构，其中每个包括用于选择性地施加场脉冲以稳定或恢复感测层（例如，411）的易轴磁化的磁场脉冲发生器（例如414）以在小磁场测量期间消除微磁畴开关。

2. 发明申请

WO2007016011A3 MAGNETIC TUNNEL JUNCTION SENSOR 审中-公开
标题翻译：磁性隧道接头传感器
公开(公告)号：WO2007016011A3
公开(公告)日：2008-09-12
申请号：PCT/US2006028576
申请日：2006-07-24
申请人： FREESCALE SEMICONDUCTOR INC , CHUNG YOUNG SIR , BAIRD ROBERT W , ENGEL BRADLEY N
发明人： CHUNG YOUNG SIR , BAIRD ROBERT W , ENGEL BRADLEY N
IPC分类号： G01R33/02
CPC分类号： G01R33/06
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus (130) comprises a magnetic tunnel junction (MTJ) (32) and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate (72).
摘要翻译：提供了用于感测物理参数的方法和装置。该装置（130）包括一个磁性隧道结（MTJ）（32）和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧道传导。第一磁极的自旋轴被固定，第二磁极具有自由轴。磁场源比第一磁极更靠近第二磁极。通过提供接收相同输入但具有不同单独响应曲线的多个电耦合传感器并期望地但不是基本上形成在同一基板（72）上来扩展总传感器动态范围。

3. 发明申请

WO2007016011A2 MAGNETIC TUNNEL JUNCTION SENSOR 审中-公开
标题翻译：磁性隧道接头传感器
公开(公告)号：WO2007016011A2
公开(公告)日：2007-02-08
申请号：PCT/US2006/028576
申请日：2006-07-24
申请人： FREESCALE SEMICONDUCTOR , CHUNG, Young Sir , BAIRD, Robert, W. , ENGEL, Bradley, N.
发明人： CHUNG, Young Sir , BAIRD, Robert, W. , ENGEL, Bradley, N.
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/06
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus (130) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36,38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置（130）包括一个磁性隧道结（MTJ）[32]和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧穿传导。第一磁极的自旋轴被固定，第二磁极具有自由轴。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

4. 发明申请

WO2006047027A3 SPIN-TRANSFER BASED MRAM USING ANGULAR-DEPENDENT SELECTIVITY 审中-公开
标题翻译：基于角度相关选择性的基于自旋传输的MRAM
公开(公告)号：WO2006047027A3
公开(公告)日：2006-12-07
申请号：PCT/US2005034260
申请日：2005-09-27
申请人： FREESCALE SEMICONDUCTOR INC , MANCOFF FREDERICK B , ENGEL BRADLEY N , RIZZO NICHOLAS D
发明人： MANCOFF FREDERICK B , ENGEL BRADLEY N , RIZZO NICHOLAS D
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic random access memory ("MRAM") device (200) can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element (204) and the free magnetic element (208) in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current (226). When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current (224).
摘要翻译：可以使用自旋转移反射模式技术来选择性地写入磁性随机存取存储器（“MRAM”）装置（200）。 MRAM阵列内的指定MRAM单元的选择性通过自旋转移切换电流对MRAM单元中偏振器元件（204）和自由磁性元件（208）的磁化之间的相对角度的依赖性来实现。偏振器元件具有可变磁化，其可响应于施加电流（例如数字线电流（226））而改变。当偏振器元件的磁化处于自然默认取向时，保留MRAM单元中的数据。当偏振器元件的磁化被切换时，响应于施加相对较低的写入电流（224），可以写入MRAM单元中的数据。

5. 发明申请

WO2006047027A2 SPIN-TRANSFER BASED MRAM USING ANGULAR-DEPENDENT SELECTIVITY 审中-公开
标题翻译：基于旋转转移的MRAM使用角度依赖选择性
公开(公告)号：WO2006047027A2
公开(公告)日：2006-05-04
申请号：PCT/US2005/034260
申请日：2005-09-27
申请人： FREESCALE SEMICONDUCTOR, INC. , MANCOFF, Frederick, B. , ENGEL, Bradley, N. , RIZZO, Nicholas, D.
发明人： MANCOFF, Frederick, B. , ENGEL, Bradley, N. , RIZZO, Nicholas, D.
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic random access memory ("MRAM") device (200) can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element (204) and the free magnetic element (208) in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g ., a digit line current (226). When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current (224).
摘要翻译：可以使用自旋转移反射模式技术来选择性地写入磁性随机存取存储器（“MRAM”）器件（200）。 MRAM阵列内的指定MRAM单元的选择性通过自旋转移开关电流与MRAM单元中的偏振器元件（204）和自由磁性元件（208）的磁化之间的相对角度的相关性来实现。偏振器元件具有可变响应于可应用电流例如数字线电流（226）而改变的磁化。当偏振器元件的磁化处于自然默认方向时，MRAM单元格中的数据将被保留。当偏振器元件的磁化被切换时，MRAM单元中的数据可以响应于施加相对低的写入电流而被写入（224）。

6. 发明申请

WO2005006338A3 MAGNETOELECTRONICS INFORMATION DEVICE HAVING A COMPOUND MAGNETIC FREE LAYER 审中-公开
标题翻译：具有复合磁性层的磁电信息设备
公开(公告)号：WO2005006338A3
公开(公告)日：2005-09-09
申请号：PCT/US2004014252
申请日：2004-05-07
申请人： FREESCALE SEMICONDUCTOR INC , ENGEL BRADLEY N
发明人： ENGEL BRADLEY N
IPC分类号： G11C20060101 , G11C11/14 , G11C11/16 , H01L43/08
CPC分类号： G11C11/16 , H01L43/08
摘要： A magnetoelectronics information device (20) is provided that includes two multi-layer structures (24, 26) and a spacer layer (28) interposed between the two multi-layer structures. Each of the multi-layer structures has two magnetic sublayers (38, 40, and 44, 46) and a spacer layer (42, 48) interposed between the two magnetic sublayers. The spacer layer interposed between the two magnetic sublayers provides an antiferromagnetic exchange coupling that is quantified by a saturation field. The spacer layer interposed between the two multi-layer structures provides a second antiferromagnetic exchange coupling is quantified by another saturation field that is less than the first saturation field.
摘要翻译：提供了一种磁电信息设备（20），其包括两个多层结构（24,26）和介于两个多层结构之间的间隔层（28）。每个多层结构具有两个磁性子层（38,40和44,46）以及介于两个磁性子层之间的隔离层（42,48）。介于两个磁子层之间的间隔层提供了由饱和场量化的反铁磁交换耦合。介于两个多层结构之间的间隔层提供第二反铁磁交换耦合，该第二反铁磁交换耦合由小于第一饱和场的另一饱和场量化。

7. 发明申请

WO2005006450A1 OBLIQUE DEPOSITION TO INDUCE MAGNETIC ANISOTROPY FOR MRAM CELLS 审中-公开
标题翻译：用于诱导MRAM细胞的磁性ANISOTROPY的OBLIQUE沉积
公开(公告)号：WO2005006450A1
公开(公告)日：2005-01-20
申请号：PCT/US2004/020156
申请日：2004-06-22
申请人： FREESCALE SEMICONDUCTOR, INC. , RIZZO, Nicholas, D. , ENGEL, Bradley, N. , JANESKY, Jason, A. , SLAUGHTER, Jon, M. , SUN, Jijun
发明人： RIZZO, Nicholas, D. , ENGEL, Bradley, N. , JANESKY, Jason, A. , SLAUGHTER, Jon, M. , SUN, Jijun
IPC分类号： H01L29/82
CPC分类号： H01F10/3254 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3272 , H01F41/18 , H01F41/303 , H01L43/12
摘要： A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region (17) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material (16) onto the first magnetic region, and depositing a second magnetic region (15) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.
摘要翻译：一种制造磁阻隧道结电池的方法，包括以下步骤：向衬底提供表面;将具有合成磁矩矢量的第一磁区（17）沉积到衬底上;将电绝缘材料（16）沉积到第一磁并且将第二磁性区域（15）沉积到所述电绝缘材料上，其中所述第一和第二磁性区域中的一个的至少一部分相对于垂直于所述表面的方向以非零沉积角沉积所述区域而形成的基底以产生诱导各向异性。

8. 发明申请

WO2009120894A3 IMPROVED MAGNETIC SENSOR DESIGN FOR SUPPRESSION OF BARKHAUSEN NOISE 审中-公开
公开(公告)号：WO2009120894A3
公开(公告)日：2009-10-01
申请号：PCT/US2009/038448
申请日：2009-03-26
申请人： MATHER, Phillip , CHUNG, Young, Sir , ENGEL, Bradley, N. , EVERSPIN TECHNOLOGIES, INC.
发明人： MATHER, Phillip , CHUNG, Young, Sir , ENGEL, Bradley, N.
IPC分类号： G01R33/09
摘要： A semiconductor process and apparatus provide a high-performance magnetic field sensor from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216), where each differential sensor (e.g., 201) is formed from a Wheatstone bridge structure with four unshielded MTJ sensors (202-205), each of which includes a magnetic field pulse generator (e.g., 414) for selectively applying a field pulse to stabilize or restore the easy axis magnetization of the sense layers (e.g., 411) to eliminate micromagnetic domain switches during measurements of small magnetic fields.

9. 发明申请

WO2007102885A3 MAGNETIC TUNNEL JUNCTION PRESSURE SENSORS AND METHODS 审中-公开
公开(公告)号：WO2007102885A3
公开(公告)日：2007-09-13
申请号：PCT/US2006/060208
申请日：2006-10-25
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , ENGEL, Bradley N.
发明人： CHUNG, Young Sir , BAIRD, Robert W. , ENGEL, Bradley N.
IPC分类号： G11B5/33
摘要： An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ("MTJ") core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core (802) has a resistance value which varies based on the magnetic field. The resistance of the MTJ core (802) therefore varies with respect to changes in the pressure. The MTJ core (802) is configured to produce an electrical output signal which varies as a function of the pressure.

10. 发明申请

WO2006132750A2 3-D INDUCTOR AND TRANSFORMER DEVICES IN MRAM EMBEDDED INTEGRATED CIRCUITS 审中-公开
标题翻译： MRAM嵌入式集成电路中的3-D电感器和变压器器件
公开(公告)号：WO2006132750A2
公开(公告)日：2006-12-14
申请号：PCT/US2006/017689
申请日：2006-05-09
申请人： FREESCALE SEMICONDUCTOR , DURLAM, Mark, A. , CHUNG, Young, Sir , BAIRD, Robert, W. , ENGEL, Bradley, N.
发明人： DURLAM, Mark, A. , CHUNG, Young, Sir , BAIRD, Robert, W. , ENGEL, Bradley, N.
IPC分类号： H01L43/00
CPC分类号： H01L27/222 , G11C11/16 , H01F17/0006 , H01F19/04 , H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device (300) includes a magnetic random access memory ("MRAM") architecture (310) and at least one inductance element (312, 314) formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal layer (or layers) as the program lines of the MRAM architecture. Any available metal layer in addition to the program line layers can be added to the inductance element to enhance its efficiency. The concurrent fabrication of the MRAM architecture (310) and the inductance element (312, 314) facilitates an efficient and cost effective use of the physical space available over active circuit blocks of the substrate, resulting in three-dimensional integration.
摘要翻译：集成电路器件（300）包括磁性随机存取存储器（“MRAM”）架构（310）和使用相同制造工艺技术形成在同一衬底上的至少一个电感元件（312,314）。可以是电感器或变压器的电感元件形成在与MRAM架构的程序行相同的金属层（或多层）上。除了编程线层之外，可以将任何可用的金属层添加到电感元件中以提高其效率。 MRAM架构（310）和电感元件（312,314）的并行制造有助于在衬底的有源电路块上可用的物理空间的有效且成本有效的使用，导致三维集成。

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