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1. 发明授权

US09957159B2 System and method for an ovenized silicon platform using Si/SiO2 hybrid supports 有权
公开(公告)号：US09957159B2
公开(公告)日：2018-05-01
申请号：US15470670
申请日：2017-03-27
申请人： Evigia Systems, Inc.
发明人： Weibin Zhu , Navid Yazdi
IPC分类号： H01L31/058 , H01L21/76 , H01L21/302 , H01L21/461 , B81C1/00 , H01L27/12 , B81B7/00
CPC分类号： B81C1/0069 , B81B7/0019 , B81B7/0096 , B81B2201/0228 , B81B2201/0278 , B81B2207/07 , B81B2207/99 , B81C2201/0126 , B81C2201/0132 , B81C2203/0118 , H01L27/1207
摘要： The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid Si/SiO2 platform compatible with typical CMOS and MEMS fabrication processes and methods of its manufacture. Embodiments of the invention may include support arms, CMOS circuitry, temperature sensors, IMUs, and/or heaters among other elements.

2. 发明授权

US09673346B1 Optimally-angleable solar powered air systems 有权
公开(公告)号：US09673346B1
公开(公告)日：2017-06-06
申请号：US14168111
申请日：2014-01-30
申请人： Dennis Martin
发明人： Dennis Martin
IPC分类号： H01L31/058 , H01L31/0525 , F24J2/00
CPC分类号： H01L31/058 , F04D25/0606 , F04D25/084 , F04D29/44 , F24S20/50 , F24S20/61 , F24S25/10 , H02S20/30 , H02S30/20 , Y02E10/47
摘要： An optimally-angleable solar powered air system is a portable indoor solar heating unit that may stand upright or may be mounted to a door or window. The optimally-angleable solar powered air system has a frame having a solar panel mounted to a first side and a fan mounted to a second side of the frame. In use, the frame may stand inside a room at an angle facing the sun via a removable handle such that the solar panel is able to capture solar energy. The system may then convert solar energy into usable power to power the fan. The second side of the frame includes an air deflector which may direct airflow outwardly from the second side of the frame into the room.

3. 发明授权

US09553140B2 Integrated circuit and method of fabricating the same 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US09553140B2
公开(公告)日：2017-01-24
申请号：US15088057
申请日：2016-03-31
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Hung-Sen Wang , Shih-Chi Yang , Kuo-Ching Chang , Wei-Sho Hung , Ho-Chun Liou
IPC分类号： H01L31/058 , H01L29/66 , H01L49/02 , H01L27/06 , H01L29/06 , H01L21/02 , H01L21/762 , H01L21/768
CPC分类号： H01L28/20 , H01L21/02595 , H01L21/762 , H01L21/76877 , H01L27/0629 , H01L27/0635 , H01L29/0649
摘要： An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.
摘要翻译：提供集成电路和制造集成电路的方法。在各种实施例中，集成电路包括衬底和多晶硅电阻器。多晶硅电阻器设置在基板上。多晶硅电阻器具有至少一个正TCR部分和至少一个负TCR部分。正TCR部分与负TCR部分相邻，并且正TCR部分与负TCR部分直接接触。

4. 发明授权

US09448123B2 Temperature sensor 有权
标题翻译：温度感应器
公开(公告)号：US09448123B2
公开(公告)日：2016-09-20
申请号：US14763477
申请日：2013-12-17
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Noriaki Nagatomo , Hitoshi Inaba , Kazuta Takeshima , Hiroshi Tanaka
IPC分类号： H01L31/058 , G01K7/22 , G01K13/08 , H01C7/04 , G01K1/14 , H01C7/00 , H01L23/495 , H01L35/02 , H01C1/142
CPC分类号： G01K7/22 , G01K1/143 , G01K13/08 , H01C1/14 , H01C1/1406 , H01C1/1413 , H01C1/142 , H01C7/006 , H01C7/008 , H01C7/04 , H01L23/495 , H01L35/02 , H01L2924/0002 , H01L2924/00
摘要： Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film.
摘要翻译：提供了一种温度传感器，其包括一对引线框架，连接到该对引线框架的传感器部分，以及固定到该对引线框架并保持引线框架的绝缘保持部分。传感器部分包括带状的绝缘膜，在绝缘膜的表面的中心部分图案形成的薄膜热敏电阻部分，一对梳状电极，其具有多个梳状部分，并形成在薄膜热敏电阻部分的顶部或底部中的至少一个彼此面对，并且一对图案电极，其一端连接到该对梳状电极，另一端连接到该对引线框架在绝缘膜的两端形成图案形成在绝缘膜的表面上。

5. 发明授权

US09331136B2 Integrated circuit and method of fabricating the same 有权
标题翻译：集成电路及其制造方法
公开(公告)号：US09331136B2
公开(公告)日：2016-05-03
申请号：US14292507
申请日：2014-05-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Hung-Sen Wang , Shih-Chi Yang , Kuo-Ching Chang , Wei-Sho Hung , Ho-Chun Liou
IPC分类号： H01L31/058 , H01L49/02 , H01L27/06 , H01L29/06 , H01L29/66
CPC分类号： H01L28/20 , H01L21/02595 , H01L21/762 , H01L21/76877 , H01L27/0629 , H01L27/0635 , H01L29/0649
摘要： An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a polysilicon resistor. The polysilicon resistor is disposed on the substrate. The polysilicon resistor has at least one positive TCR portion and at least one negative TCR portion. The positive TCR portion is adjacent to the negative TCR portion, and the positive TCR portion is in direct contact with the negative TCR portion.
摘要翻译：提供集成电路和制造集成电路的方法。在各种实施例中，集成电路包括衬底和多晶硅电阻器。多晶硅电阻器设置在基板上。多晶硅电阻器具有至少一个正TCR部分和至少一个负TCR部分。正TCR部分与负TCR部分相邻，并且正TCR部分与负TCR部分直接接触。

6. 发明授权

US09240510B2 Concentrated photovoltaic and thermal solar energy collector 有权
公开(公告)号：US09240510B2
公开(公告)日：2016-01-19
申请号：US13913377
申请日：2010-12-08
申请人： David Correia , Arthur M Shulenberger , Jim Braig
发明人： David Correia , Arthur M Shulenberger , Jim Braig
IPC分类号： H01L31/058 , H01L31/0525 , H01L31/18 , F24J2/05 , F24J2/14 , H01L31/052 , H02S40/44 , H01L31/054 , F24J2/38 , F24J2/46 , F24J2/50 , F24J2/52 , F24J2/54
CPC分类号： H01L31/18 , F24S10/45 , F24S23/74 , F24S25/61 , F24S30/425 , F24S40/85 , F24S50/20 , F24S80/50 , F24S2025/011 , F24S2080/503 , H01L31/0521 , H01L31/0547 , H02S40/44 , Y02E10/44 , Y02E10/45 , Y02E10/47 , Y02E10/52 , Y02E10/60 , Y02P80/15 , Y10T29/49355
摘要： This invention relates to a solar energy collector that converts solar radiation into both electrical and thermal energy. More specifically this invention relates to a concentrating solar energy collector with an integrated construction that minimizes cost, bulk, and weight, and maximizes overall efficiency. Typical non-concentrating solar collectors use photovoltaic cells over the entirety of their surface. These solar cells are the most expensive part of the collector. This invention discloses using a reflector to concentrate the incident radiation on photovoltaic cells with one-twentieth the area of the reflector, and transferring the co-generated thermal energy into a working fluid pumped through the cell support structure.

7. 发明授权

US09035413B2 Semiconductor device with embedded converter element and production method for a semiconductor device with an embedded converter element 有权
标题翻译：具有嵌入式转换器元件的半导体器件和具有嵌入式转换器元件的半导体器件的制造方法
公开(公告)号：US09035413B2
公开(公告)日：2015-05-19
申请号：US14032340
申请日：2013-09-20
申请人： Robert Bosch GmbH
发明人： Georg Bischopink , Silvia Kronmueller , Christoph Schelling
IPC分类号： H01L31/058 , H01L21/00 , H01L27/142 , H01L31/18 , H01L31/0475
CPC分类号： H01L27/142 , H01L24/19 , H01L27/14649 , H01L31/0475 , H01L31/1876 , Y02E10/50
摘要： A semiconductor device includes a carrier substrate having at least one conductor track, at least one converter element structured at least partly from a further semiconductor substrate, and conductive structures formed on a respective converter element. The at least one converter element is electrically linked to the at least one conductor track via at least one at least partly conductive supporting element arranged between a contact side of the carrier substrate and an inner side of the converter element. The inner side is oriented toward the carrier substrate. The at least one converter element is arranged on the contact side of the carrier substrate such that the inner side of the converter element is kept spaced apart from the contact side of the carrier substrate. The at least one converter element and the conductive structures formed thereon are completely embedded into at least one insulating material.
摘要翻译：半导体器件包括具有至少一个导体轨道的载体衬底，至少一个由另一个半导体衬底构成的转换器元件，以及形成在相应的转换元件上的导电结构。所述至少一个转换器元件经由布置在所述载体基板的接触侧和所述转换器元件的内侧之间的至少一个至少部分导电的支撑元件电连接到所述至少一个导体轨道。内侧朝向载体基板。所述至少一个转换器元件布置在所述载体衬底的接触侧上，使得所述转换器元件的内侧与所述载体衬底的接触侧保持间隔开。至少一个转换器元件和其上形成的导电结构完全嵌入到至少一个绝缘材料中。

8. 发明授权

US09018728B2 Semiconductor apparatus, manufacturing apparatus, and manufacturing method 有权
标题翻译：半导体装置，制造装置及制造方法
公开(公告)号：US09018728B2
公开(公告)日：2015-04-28
申请号：US13352776
申请日：2012-01-18
申请人： Toshiaki Iwafuchi , Masahiko Shimizu
发明人： Toshiaki Iwafuchi , Masahiko Shimizu
IPC分类号： H01L31/058 , H01L27/146 , H01L23/00
CPC分类号： H01L27/14618 , H01L24/48 , H01L24/78 , H01L24/85 , H01L24/97 , H01L27/14623 , H01L2224/05599 , H01L2224/451 , H01L2224/48091 , H01L2224/48465 , H01L2224/78301 , H01L2224/85181 , H01L2224/85399 , H01L2224/97 , H01L2924/00014 , H01L2924/19105 , H01L2924/3025 , H01L2924/00 , H01L2224/85 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： A semiconductor apparatus includes: a first sheet-like member having a light receiving surface of an imaging device and a first connection terminal disposed thereon, the imaging device generating an image by receiving incident light from a light collecting section for collecting external light disposed thereon; a second sheet-like member having a second connection terminal to be connected to the first connection terminal provided thereon; a conductive bonding portion made of a conductive material and bonded with the first connection terminal; and a bonding wire connecting the conductive bonding portion and the second connection terminal, wherein the bonding wire is disposed along the plane of the first sheet-like member such that reflected light from the bonding wire does not impinge on the light receiving surface.
摘要翻译：一种半导体装置，包括：第一片状构件，具有成像装置的受光面和设置在其上的第一连接端子，所述摄像装置通过接收来自用于收集设置在其上的外部光的聚光部的入射光而产生图像; 第二片状构件，具有连接到设置在其上的第一连接端子的第二连接端子; 由导电材料制成并与第一连接端子接合的导电接合部分; 以及连接导电接合部和第二连接端子的接合线，其中，接合线沿着第一片状部件的平面配置，使得来自接合线的反射光不会撞击在受光面上。

9. 发明授权

US08952479B2 Focal plane array and method for manufacturing the same 有权
标题翻译：焦平面阵列及其制造方法
公开(公告)号：US08952479B2
公开(公告)日：2015-02-10
申请号：US13582103
申请日：2011-03-01
申请人： Adriana Lapadatu , Gjermund Kittilsland
发明人： Adriana Lapadatu , Gjermund Kittilsland
IPC分类号： H01L31/058 , H01L27/146
CPC分类号： H01L27/1467 , H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/14683 , H01L27/14685 , H01L27/14687
摘要： A method of forming a focal plane array by: preparing a first wafer having sensing material provided on a surface, which is covered by a sacrificial layer; preparing a second wafer including read-out integrated circuit and a contact pad, which is covered by another sacrificial layer into which are formed support legs in contact with the contact pad, the support legs being covered with a further sacrificial layer; bonding the sacrificial layers of the first and second wafers together such that the sensing material is transferred from the first wafer to the second wafer when a sacrificial bulk layer of the first wafer is removed; defining a pixel in the sensing material and forming a conductive via through the pixel for providing a connection between an uppermost surface of the pixel and the supporting legs; and removing the sacrificial layers to release the pixel, with the supporting legs underneath it.
摘要翻译：一种通过以下步骤形成焦平面阵列的方法：制备具有设置在由牺牲层覆盖的表面上的感测材料的第一晶片; 制备包括读出集成电路和接触焊盘的第二晶片，其被另一牺牲层覆盖，其中形成有与接触焊盘接触的支撑腿，所述支撑腿被另外的牺牲层覆盖; 将第一和第二晶片的牺牲层结合在一起，使得当去除第一晶片的牺牲体层时，感测材料从第一晶片转移到第二晶片; 在所述感测材料中限定像素并形成通过所述像素的导电通孔，以提供所述像素的最上表面与所述支撑腿之间的连接; 并且移除牺牲层以释放像素，其中支撑腿在其下方。

10. 发明授权

US08883524B2 Methods and apparatus for CMOS sensors 有权
标题翻译： CMOS传感器的方法和装置
公开(公告)号：US08883524B2
公开(公告)日：2014-11-11
申请号：US13908838
申请日：2013-06-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chun-Tsung Kuo , Jiech-Fun Lu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L21/00 , H01L27/148 , H01L29/84 , H01L29/66 , H01L29/82 , H01L27/22 , H01L31/00 , H01L31/058 , H01L27/146 , H01L21/306
CPC分类号： H01L27/14643 , H01L21/31144 , H01L27/14609 , H01L27/14645 , H01L27/14689
摘要： Methods and apparatus for a sensor are disclosed. An oxide layer is formed on a substrate, followed by a spacer layer and a buffer layer. A photoresist layer is formed on the buffer layer over a pixel region, with an opening exposing a first part of the buffer layer. A first etching is performed to remove the first part of the buffer layer to expose a first part of the spacer layer. A second etching is performed to remove the first part of the spacer layer, the remaining buffer layer, and partially remove a second part of the spacer layer so that the result spacer layer will have an end with a shape substantially similar to a triangle, a height of the end is in a substantially same range as a length of the end.
摘要翻译：公开了传感器的方法和装置。在衬底上形成氧化物层，然后形成间隔层和缓冲层。在像素区域上的缓冲层上形成光致抗蚀剂层，其中开口暴露缓冲层的第一部分。执行第一蚀刻以去除缓冲层的第一部分以暴露间隔层的第一部分。执行第二蚀刻以去除间隔层的第一部分，剩余的缓冲层，并且部分地移除间隔层的第二部分，使得结果间隔层将具有基本上类似于三角形的形状的端部，端部的高度与端部的长度大致相同的范围。

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