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1. 发明授权

US09890465B2 Apparatus and methods for uniformly forming porous semiconductor on a substrate 有权
公开(公告)号：US09890465B2
公开(公告)日：2018-02-13
申请号：US14563888
申请日：2014-12-08
申请人： TruTag Technologies, Inc.
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： C25D11/32 , C25D11/00 , C25D7/12 , C25D11/02 , C25F7/00 , C25D21/04 , C25D17/00 , C25D17/08
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

2. 发明授权

US09869031B2 High-productivity porous semiconductor manufacturing equipment 有权
公开(公告)号：US09869031B2
公开(公告)日：2018-01-16
申请号：US14679731
申请日：2015-04-06
申请人： OB REALTY, LLC
发明人： George D. Kamian , Somnath Nag , Subramanian Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
IPC分类号： C30B1/10 , C25D11/32 , H01L31/18 , C25D17/00 , C25D17/06 , C25D11/00 , C25F3/12 , C25F7/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

3. 发明授权

US09677187B2 Non-metallic coating and method of its production 有权
公开(公告)号：US09677187B2
公开(公告)日：2017-06-13
申请号：US13984096
申请日：2012-02-07
申请人： Pavel Shashkov , Gennady Khomutov , Aleksey Yerokhin , Sergey Usov
发明人： Pavel Shashkov , Gennady Khomutov , Aleksey Yerokhin , Sergey Usov
IPC分类号： C25D11/02 , C25D5/18 , C25D11/00 , C25D11/04 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D21/12 , H01L23/14 , H05K1/05 , C25D11/06 , C25D15/00 , H05K1/02 , H05K1/11 , H05K1/18 , H01L23/373 , H01L23/367
CPC分类号： C25D5/18 , C25D11/00 , C25D11/005 , C25D11/02 , C25D11/024 , C25D11/026 , C25D11/04 , C25D11/06 , C25D11/26 , C25D11/30 , C25D11/32 , C25D13/02 , C25D15/00 , C25D21/12 , H01L23/142 , H01L23/3677 , H01L23/3735 , H01L2224/48227 , H01L2224/49109 , H01L2924/01327 , H01L2924/09701 , H01L2924/1305 , H01L2924/13055 , H05K1/021 , H05K1/053 , H05K1/115 , H05K1/18 , H05K2201/0116 , H05K2203/0315 , H05K2203/1147 , Y10T428/1317 , Y10T428/24917 , Y10T428/249969 , H01L2924/00
摘要： A method of forming a non-metallic coating on a metallic substrate involves the steps of positioning the metallic substrate in an electrolysis chamber and applying a sequence of voltage pulses of alternating polarity to electrically bias the substrate with respect to an electrode. Positive voltage pulses anodically bias the substrate with respect to the electrode and negative voltage pulses cathodically bias the substrate with respect to the electrode. The amplitude of the positive voltage pulses is potentiostatically controlled, whereas the amplitude of the negative voltage pulses is galvanostatically controlled.

4. 发明授权

US09528194B2 Systems and methods for forming nanowires using anodic oxidation 有权
标题翻译：使用阳极氧化形成纳米线的系统和方法
公开(公告)号：US09528194B2
公开(公告)日：2016-12-27
申请号：US14315421
申请日：2014-06-26
申请人： Taiwan Semiconductor Manufacturing Company Limited , National Taiwan University
发明人： Jenn-Gwo Hwu , Wei-Cheng Tian , Po-Hao Tseng
IPC分类号： C25D7/06 , H01L29/423 , H01L29/40 , H01L21/02 , C25D5/02 , C25D9/06 , C25D11/32 , B82Y10/00 , B82Y40/00 , H01L29/775 , H01L29/06
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , C25D5/02 , C25D7/0607 , C25D9/06 , C25D11/005 , C25D11/022 , C25D11/32 , C25D17/001 , C25D17/005 , C25D17/06 , H01L21/02258 , H01L21/02603 , H01L29/401 , H01L29/42364 , H01L29/42372 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要： Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
摘要翻译：提供了用于在衬底上形成纳米线的结构，装置和方法。在基板上形成第一突出结构。将第一突出结构置于电解液中。使用基板作为阳极电极的一部分进行阳极氧化。在突出结构中形成一个或多个纳米线。纳米线被阳极氧化时形成的第一介电材料包围。

5. 发明授权

US09464354B2 Cutting tool with wear-recognition layer 有权
公开(公告)号：US09464354B2
公开(公告)日：2016-10-11
申请号：US14414727
申请日：2013-07-23
申请人： Walter AG
发明人： Sebastian Hampsch , Veit Schier
IPC分类号： C23C14/34 , C23C28/00 , C23C14/00 , C23C14/08 , C23C14/16 , C23C14/18 , C23C14/35 , C23C14/58 , C23C28/04 , C23C30/00 , C25D11/04 , C25D11/26 , C25D11/32 , C25D11/02
CPC分类号： C23C28/347 , C23C14/0015 , C23C14/08 , C23C14/16 , C23C14/165 , C23C14/18 , C23C14/185 , C23C14/3485 , C23C14/35 , C23C14/5853 , C23C14/5873 , C23C28/042 , C23C28/044 , C23C28/321 , C23C28/345 , C23C28/40 , C23C28/42 , C23C30/005 , C25D11/02 , C25D11/04 , C25D11/26 , C25D11/32 , Y10T428/1259 , Y10T428/24975 , Y10T428/265
摘要： Tool with optional wear-protection coating has, as an outer layer arranged on top of the substrate body or wear-protection coating, a single-layer wear-recognition layer (A) or a multilayer wear-recognition layer (B) comprising at least 4 individual layers arranged one above another, said layer or layers being produced by depositing elemental metals, metal alloys or electrically conductive metal compounds with a PVD process. Individual layer of (A) or at least one individual layer of (B) contain at least two different metals, the wear-recognition layer comprises a region produced by anodic oxidation from the upper surface down to a penetration depth that does not extend over the entire thickness of the wear-recognition layer, and the individual layer of (A) or the at least one individual layer of (B) has at least two different phases before the anodic oxidation and in the regions of the wear recognition layer that are not anodically oxidized.

6. 发明申请

US20120145553A1 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权
标题翻译：在基板上均匀形成多孔半导体的装置和方法
公开(公告)号：US20120145553A1
公开(公告)日：2012-06-14
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： C25D7/12 , C25D11/32 , C25B9/00
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

7. 发明申请

US20050085001A1 Luminescence stabilization of anodically oxidized porous silicon layers 失效
标题翻译：阳极氧化多孔硅层的发光稳定性
公开(公告)号：US20050085001A1
公开(公告)日：2005-04-21
申请号：US10972550
申请日：2004-10-25
申请人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
发明人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
IPC分类号： C25D11/32 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
摘要翻译：多孔硅结构通过阳极氧化该结构而稳定化，然后进行化学官能化以保护未氧化的表面区域，优选在1-癸烯存在下在热条件下进行。该方法在结构表面上产生保护性有机单层，使其高度稳定。

8. 发明申请

US20050077183A1 Anodic oxidation apparatus, anodic oxidation method, and panel for display device 失效
标题翻译：阳极氧化装置，阳极氧化法，显示装置用面板
公开(公告)号：US20050077183A1
公开(公告)日：2005-04-14
申请号：US10924830
申请日：2004-08-25
申请人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
发明人： Yasushi Yagi , Mitsuru Ushijima , Yoshifumi Watabe , Takuya Komoda , Koichi Aizawa
IPC分类号： H01L21/3063 , C25D5/00 , C25D11/02 , C25D11/32 , C25D17/00 , C25F3/12 , C25F3/14 , C25F7/00 , H01J31/15 , H01L21/02 , H01L21/316
CPC分类号： C25D11/02 , C25D11/005 , C25D11/32 , C25F3/12 , C25F3/14 , C25F7/00 , H01L21/02203 , H01L21/02238 , H01L21/02258 , H01L21/3167 , H01L21/31675 , Y10S204/07
摘要： In an anodic oxidation apparatus and an anodic oxidation method and a panel for a display device manufactured by them, a large target substrate is treated by a smaller component. The anodic oxidation apparatus includes a lamp which emits light; a treatment bath which has a stage capable of mounting a target substrate thereon with a treatment part thereof directed upward and is provided at a position where the emitted light reaches and a frame located on the stage; a cathode electrode which is provided on the way of the emitted light to reach the mounted target substrate and includes an opening to allow the light to pass therethrough; a seal member which establishes a liquid sealing property between the frame and the mounted target substrate; a conductive contact member which is provided to be contactable with a plurality of electrode patterns formed on the target substrate outside an annular shape of the seal member and moves along side of the target substrate; and a current source which is electrically connected to the contact member and sets an output current value in accordance with the number of electrode patterns of the mounted target substrate in contact as the contact member moves.
摘要翻译：在阳极氧化装置和阳极氧化法以及由它们制造的显示装置的面板中，通过较小的成分处理大的靶基板。阳极氧化装置包括发光的灯; 处理槽，其具有能够在其上安装目标基板的阶段，其处理部分向上指向并设置在所发射的光到达的位置和位于台上的框架; 阴极，其设置在所发射的光的路上，以到达所安装的目标基板，并且包括允许光通过的开口; 密封构件，其在所述框架和所安装的目标基板之间建立液体密封性; 导电接触构件，其设置成可与形成在所述目标基板上的多个电极图案接触，所述多个电极图案位于所述密封构件的环形形状的外侧，并且沿着所述目标基板的侧面移动; 以及电流源，其电连接到所述接触构件，并且当所述接触构件移动时，根据所接触的安装的目标衬底的电极图案的数量设定输出电流值。

9. 发明授权

US6063642A Method for generating luminescence from a buried layer in a multilayer compound semiconductor material using a liquid contact 失效
标题翻译：使用液体接触从多层化合物半导体材料中的掩埋层产生发光的方法
公开(公告)号：US6063642A
公开(公告)日：2000-05-16
申请号：US719012
申请日：1996-09-24
申请人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove , Craig C. Largent
发明人： Peter S. Zory, Jr. , Douglas A. Hudson, Jr. , Michael J. Grove , Craig C. Largent
IPC分类号： C25D11/32 , H01L21/3063 , H01L21/316 , H01L21/465 , H01L21/471 , H01L21/00
CPC分类号： H01L21/471 , H01L21/465 , H01S5/042 , H01S5/0425 , H01L33/40 , H01S5/183
摘要： A method is disclosed for generating light in one or more buried layers of a multilayer compound semiconductor material by contacting the material with a tansparent, electrically conducting fluid and passing current between the fluid and the semiconductor material. The measured characteristics of the light emitted from a first semiconductor material may be compared with those measured from a second semiconductor material of known properties, and the properties of the first semiconductor material calculated. Uniformity maps of the compound semiconductor material may be prepared using the patterns of various light emission characteristics measured across the surface of the material.
摘要翻译：公开了一种用于在多层化合物半导体材料的一个或多个掩埋层中产生光的方法，该材料通过使材料与透明导电流体接触并在流体和半导体材料之间传递电流。可以将从第一半导体材料发射的光的测量特性与从已知性质的第二半导体材料测量的特性进行比较，并且计算第一半导体材料的性质。可以使用在材料表面上测量的各种发光特性的图案来制备化合物半导体材料的均匀性图。

10. 发明授权

US5338413A Method for the preparation of a polymeric shaped article containing an electrically conductive polymer 失效
标题翻译：制备含有导电聚合物的聚合物成型制品的方法
公开(公告)号：US5338413A
公开(公告)日：1994-08-16
申请号：US091715
申请日：1993-07-15
申请人： Hans K. van Dijk , Ronald M. A. M. Schellekens
发明人： Hans K. van Dijk , Ronald M. A. M. Schellekens
IPC分类号： C08G61/12 , C25B3/02 , C25D11/32
CPC分类号： C08G61/124 , C08G61/126
摘要： Method for the preparation of a polymeric shaped article containing an electrically conductive polymer wherein a base shaped article possessing electrically conductive properties is moved along an anode, at least part of the article being in contact with the anode, in the presence of an electrolyte-containing medium containing monomer units, which on polymerization form an electrically conductive polymer and wherein a voltage is applied between the anode and a second electrode which is in contact with the electrolyte-containing medium. It has appeared that, in the method according to the invention, the shaped article does not adhere to the electrode so that the method may be practiced continuously. A further advantage of the shaped article failing to adhere to the electrode is that the method according to the invention generates very little waste. Furthermore, it has appeared that the method according to the invention allows a shaped article to be produced with a very short polymerization time, the electrically conductive polymer in which being homogeneously distributed. The applied base shaped article does not swell during wetting, so that the mechanical properties of the base shaped article do not deteriorate. As a result, if the method is applied, for instance, continuously, a higher rate of production can be applied.
摘要翻译：制备含有导电聚合物的聚合物成型制品的方法，其中具有导电性能的基底成型制品沿着阳极移动，至少部分制品与阳极接触，在含电解质的存在下介质含有单体单元，其在聚合时形成导电聚合物，并且其中在阳极和与含电解质的介质接触的第二电极之间施加电压。看来，在根据本发明的方法中，成形制品不粘附到电极上，使得可以连续地实施该方法。成型制品未能粘附到电极的另一个优点是根据本发明的方法产生很少的浪费。此外，似乎根据本发明的方法允许以非常短的聚合时间制造成形制品，其中均匀分布的导电聚合物。所施加的基底成型制品在润湿期间不膨胀，使得基底成型制品的机械性能不劣化。结果，如果例如连续地应用该方法，则可以应用更高的生产率。

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