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1. 发明申请

US20220077006A1 ENDPOINT DETECTION FOR CHEMICAL MECHANICAL POLISHING BASED ON SPECTROMETRY 有权
公开(公告)号：US20220077006A1
公开(公告)日：2022-03-10
申请号：US17530390
申请日：2021-11-18
申请人： Applied Materials, Inc.
发明人： Dominic J. Benvegnu , Jeffrey Drue David , Boguslaw A. Swedek
IPC分类号： H01L21/66 , B24B37/013 , B24B37/20 , B24B49/08 , B24B49/12 , B24D7/14 , H01L21/3105 , H01L21/321 , H01L21/306 , H01L21/67
摘要： A method of detecting a polishing endpoint includes storing a plurality of library spectra, measuring a sequence of spectra from the substrate in-situ during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching library spectrum from the plurality of library spectra to generate a sequence of best matching library spectra. Each library spectrum has a stored associated value representing a degree of progress through a polishing process, and the stored associated value for the best matching library spectrum is determined for each best matching library spectrum to generate a sequence of values representing a progression of polishing of the substrate. The sequence of values is compared to a target value, and a polishing endpoint is triggered when the sequence of values reaches the target value.

2. 发明申请

US20180339398A1 BURNISHING TOOL AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180339398A1
公开(公告)日：2018-11-29
申请号：US15606348
申请日：2017-05-26
申请人： General Electric Company
发明人： Kevin William Meyer
IPC分类号： B24B53/095 , B24B39/02 , B24B49/08 , B24B55/04
摘要： A burnishing tool and a method of additively manufacturing components of the burnishing tool are provided. The burnishing tool includes a burnishing element for burnishing a workpiece. The burnishing element is positioned between an upper nozzle and a lower nozzle which are additively manufactured to define a plurality of internal fluid passageways for receiving, distributing, and discharging a burnishing fluid to facilitate cooling and/or lubrication of the burnishing element and/or the workpiece.

3. 发明授权

US09922852B2 Pressure calibration jig and substrate processing apparatus 有权
公开(公告)号：US09922852B2
公开(公告)日：2018-03-20
申请号：US15311638
申请日：2015-04-06
申请人： EBARA CORPORATION
发明人： Suguru Sakugawa , Nobuyuki Takahashi , Toru Maruyama
IPC分类号： B24B37/005 , B24B49/08 , B24B49/16 , H01L21/304 , H01L21/67 , B24B37/30 , H01L21/306 , H01L21/677 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67253 , B24B37/005 , B24B37/30 , B24B49/08 , B24B49/16 , H01L21/304 , H01L21/30625 , H01L21/67051 , H01L21/67092 , H01L21/67219 , H01L21/67778 , H01L21/6838 , H01L21/68707 , H01L21/68764
摘要： The invention simplifies airbag calibration. A pressure calibration jig calibrates pressure to be applied to a plurality of airbags disposed inside a top ring for holding and pressing a wafer against a polishing pad. The pressure calibration jig includes a plurality of first passages capable of communicating with the plurality of airbags, respectively; a second passage which combines and connects the plurality of first passages to a pressure calibration sensor; and a flow control portion configured to allow a fluid to flow through the first passage of the plurality of first passages, which first passage corresponds to an airbag selected for pressure calibration, in a direction from the selected airbag toward the second passage, and also configured to prevent the fluid from flowing through the first passages other than the first passage corresponding to the selected airbag in a direction from the second passage toward the airbags.

4. 发明授权

US09482243B2 Reciprocating servo control device for mainshaft of honing machine 有权
标题翻译：珩磨机主轴往复伺服控制装置
公开(公告)号：US09482243B2
公开(公告)日：2016-11-01
申请号：US14025792
申请日：2013-09-12
申请人： NINGXIA YINCHUAN DAHE CNC MACHINE CO., LTD. , BEIJING RESEARCH INSTITUTE OF AUTOMATION FOR MACHINERY INDUSTRY
发明人： Hongjun Zhang , Jinchuan Zheng , Jianhua Xu
IPC分类号： B24B49/08 , B24B47/06 , B24B47/14 , B24B47/16 , B24B33/06 , F15B13/02 , F15B13/00 , B24B33/10
CPC分类号： F15B13/00 , B24B33/06 , B24B33/105 , B24B47/16 , B24B49/08
摘要： A reciprocating servo control device for a mainshaft of a honing machine includes a bed body, a mainshaft mechanism, a driving system for hydraulic reversing and a control system, the driving system includes a mainshaft hydraulic cylinder and a mechanical-hydraulic servo valve, a valve body of the mechanical-hydraulic servo valve is connected to a piston rod of the mainshaft hydraulic cylinder via a connecting mechanism, a spool of the mechanical-hydraulic servo valve is connected to one end of a first connecting member, and the other end of the first connecting member is connected to a pilot displacement mechanism controlled by a servo driving and control system. The reciprocating servo control device adopts a mechanical position closed-loop and a hydraulic position closed-loop, to achieve numerical control of speed, position and reversing of the mainshaft hydraulic cylinder, thus a simple structure, reliable control, low price and easy adjustment can be realized.
摘要翻译：一种用于珩磨机主轴的往复式伺服控制装置，包括床体，主轴机构，用于液压反向的驱动系统和控制系统，该驱动系统包括主轴液压缸和机械液压伺服阀，阀机械液压伺服阀的主体通过连接机构连接到主轴液压缸的活塞杆，机械液压伺服阀的阀芯连接到第一连接构件的一端，另一端第一连接构件连接到由伺服驱动和控制系统控制的先导位移机构。往复伺服控制装置采用机械位置闭环和液压位置闭环，实现主轴液压缸速度，位置和倒档数值控制，结构简单，控制可靠，价格便宜，调节方便实现。

5. 发明申请

US20100285723A1 POLISHING APPARATUS 有权
标题翻译：抛光装置
公开(公告)号：US20100285723A1
公开(公告)日：2010-11-11
申请号：US12437315
申请日：2009-05-07
申请人： Yu-Liang Lin , Chien Ling Hwang , Jean Wang , Chen-Hua Yu
发明人： Yu-Liang Lin , Chien Ling Hwang , Jean Wang , Chen-Hua Yu
IPC分类号： B24B49/16 , B24B7/22 , B24B49/08 , B24B53/02 , B24B57/02
CPC分类号： B24B57/02 , B24B37/107 , B24B53/017 , H01L21/02052
摘要： A chemical mechanical polishing (CMP) device for processing a wafer is provided which includes a plate for supporting the wafer to be processed in a face-up orientation, a polishing head opposing the plate, wherein the polishing head includes a rotatable polishing pad operable to contact the wafer while the polishing pad is rotating, and a slurry coating system providing a slurry to the polishing pad for polishing the wafer.
摘要翻译：提供了一种用于处理晶片的化学机械抛光（CMP）装置，其包括用于以面朝上的方向支撑待加工的晶片的板，与该板相对的抛光头，其中抛光头包括可旋转的抛光垫，在抛光垫旋转的同时接触晶片;以及浆料涂覆系统，其向抛光垫提供浆料以抛光晶片。

6. 发明申请

US20090239446A1 Polishing Apparatus and Polishing Method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US20090239446A1
公开(公告)日：2009-09-24
申请号：US11884746
申请日：2005-08-30
申请人： Akira Fukuda , Yoshihiro Mochizuki , Kazuto Hirokawa
发明人： Akira Fukuda , Yoshihiro Mochizuki , Kazuto Hirokawa
IPC分类号： B24B49/00 , B24B1/00 , B24B49/08 , B24B49/16 , B24D11/00 , B24B37/04
CPC分类号： B24B37/005
摘要： A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.
摘要翻译：提供抛光装置用于以高屈服率抛光晶片，即使存在滚降。抛光装置通过在抛光构件（抛光垫）201和由保持构件（顶环））52保持的晶片W之间施加压力并将抛光构件201相对移动到晶片W来对晶片W进行抛光。抛光装置包括用于保持晶片W的顶环52，用于调节通过保持环203将晶片W支撑在支撑表面上的支撑压力的压力调节机构206以及用于将压力调节机构206控制到基于晶片W的滚降量将支撑压力提高到期望的压力。顶环52包括用于将晶片W压靠在抛光垫201上的气囊202，围绕晶片W的保持环203和用于按压保持环203的气囊204。

7. 发明授权

US07118452B2 Pneumatically actuated flexible coupling end effectors for lapping/polishing 有权
标题翻译：用于研磨/抛光的气动柔性联轴器端部执行器
公开(公告)号：US07118452B2
公开(公告)日：2006-10-10
申请号：US10777388
申请日：2004-02-12
申请人： Jeffrey H. Wood
发明人： Jeffrey H. Wood
IPC分类号： B24B49/08 , B24B19/26
CPC分类号： B24B35/005 , B24B19/26 , B24B27/0038 , B25J11/0065
摘要： Methods and apparatus for end effectors for performing surface lapping using a robotic system are provided. In one embodiment, a lapping system includes a robotic arm and a pneumatic end effector unit. The pneumatic end effector unit includes a first base attached to the robotic arm, a second base, a lapping pad attachable to the second base, and a pneumatic piston system coupled between the first and second bases. An abrasive pad is attached to the lapping pad with a layer of pitch. The pneumatic piston system includes a piston chamber, a piston being slideably received within the piston chamber, and a component for controlling air pressure within the piston chamber. A slurry system introduces a slurry compound into one of the second base or the lapping pad.
摘要翻译：提供了使用机器人系统进行表面研磨的末端执行器的方法和装置。在一个实施例中，研磨系统包括机器臂和气动端部执行器单元。气动端部执行器单元包括附接到机器人臂的第一基座，第二基座，可附接到第二基座的研磨垫，以及耦合在第一和第二基座之间的气动活塞系统。研磨垫用沥青层连接到研磨垫上。气动活塞系统包括活塞室，活塞可滑动地容纳在活塞室内，以及用于控制活塞室内的空气压力的部件。浆料系统将浆料化合物引入第二基底或研磨垫中的一个中。

8. 发明授权

US6159071A Semiconductor wafer grinding apparatus 有权
标题翻译：半导体晶圆研磨装置
公开(公告)号：US6159071A
公开(公告)日：2000-12-12
申请号：US335922
申请日：1999-06-18
申请人： Yutaka Koma , Motomi Kitano , Takashi Kouda
发明人： Yutaka Koma , Motomi Kitano , Takashi Kouda
IPC分类号： B24B7/22 , B24B37/04 , B24B37/30 , B24B47/08 , H01L21/304 , B24B49/08
CPC分类号： B24B7/228 , B24B41/06 , B24B47/08
摘要： Disclosed is an improved semiconductor wafer grinding apparatus comprising at least wafer holding means and wafer grinding means. The wafer holding means comprises a holder having a wafer-gripping surface for sucking and holding a selected semiconductor wafer and liquid bearing means for rotatably supporting the holder. The liquid bearing means has inclination control means formed therein, and the inclination control means includes discrete inclination controlling areas for suspending the holder at upper and lower levels. Each inclination controlling area has flow rate control means connected thereto. The parallelism of the wafer-gripping surface relative to the wafer grinding means is assured by controlling the flow rate of the liquid to each inclination controlling area.
摘要翻译：公开了一种改进的半导体晶片研磨设备，其包括至少晶片保持装置和晶片研磨装置。晶片保持装置包括具有用于吸取和保持所选择的半导体晶片的晶片抓持表面和用于可旋转地支撑保持器的液体支承装置的保持器。液体支承装置具有形成在其中的倾斜控制装置，并且倾斜控制装置包括用于将支架悬挂在上下水平的离散倾斜控制区域。每个倾斜控制区域具有连接到其上的流量控制装置。通过控制液体到每个倾斜控制区域的流速来确保晶片夹持表面相对于晶片研磨装置的平行度。

9. 发明授权

US5427564A Controlled surface treating work device 失效
标题翻译：受控表面处理工作装置
公开(公告)号：US5427564A
公开(公告)日：1995-06-27
申请号：US100318
申请日：1993-08-02
申请人： Glenn A. Whittington , Steven J. Austin
发明人： Glenn A. Whittington , Steven J. Austin
IPC分类号： B24B47/20 , B24B49/08 , B24B49/16
CPC分类号： B24B49/16 , B24B47/20 , B24B49/08
摘要： Relates to the automatic operation and control of a surface treating device having a powered tool and a work wheel for engagement with a work piece, said device being carried on a robotic arm and being adapted to maintain a uniform pressure of engagement of said work wheel with a work piece and a uniform rate of speed of the working surface of said work wheel in its engagement with the work piece, and a balancing pressure applied to said powered tool and work wheel to in effect make them weightless for their precise control.
摘要翻译：关于具有动力工具和用于与工件接合的工作轮的表面处理装置的自动操作和控制，所述装置承载在机器人手臂上并且适于将所述工作轮的接合压力均匀地保持在所述工作轮的工作表面与工件接合的工件和速度均匀，并且施加到所述动力工具和工作轮上的平衡压力实际上使得它们失重以进行精确的控制。

10. 发明授权

US5325636A Polishing machine with pneumatic tool pressure adjustment 失效
标题翻译：抛光机采用气动工具压力调节
公开(公告)号：US5325636A
公开(公告)日：1994-07-05
申请号：US889621
申请日：1992-05-28
申请人： Claude Attanasio , Jean-Claude Seigue
发明人： Claude Attanasio , Jean-Claude Seigue
IPC分类号： B24B41/04 , B24B17/08 , B24B35/00 , B24B47/20 , B24B49/08 , B24B49/16
CPC分类号： B24B49/16 , B24B35/00 , B24B49/08
摘要： A polishing machine comprising a frame 1, a mobile polishing head 2 mounted on the frame, an abrasion tool 10, and a reciprocating slide 7 for causing the tool to polish a contacted object. The tool is mounted on a tool holder 9 fitted with a pneumatic system 36, 38; 50 producing a dual adjustment of the bearing pressure generated by the tool 10 on the object P being polished.
摘要翻译：一种抛光机，包括框架1，安装在框架上的移动抛光头2，磨损工具10和用于使工具抛光接触物体的往复滑动件7。该工具安装在装有气动系统36,38的工具架9上; 50对被研磨物体P上的工具10产生的轴承压力进行双重调整。

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