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1. 发明公开

US20240305905A1 OVERLIGHT AMOUNT DETECTION CIRCUIT, LIGHT RECEIVING ELEMENT, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240305905A1
公开(公告)日：2024-09-12
申请号：US18666112
申请日：2024-05-16
申请人： Sony Semiconductor Solutions Corporation
发明人： Junichiro Kusuda
IPC分类号： H04N25/62 , H04N25/75 , H04N25/77
CPC分类号： H04N25/62 , H04N25/75 , H04N25/77
摘要： An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

2. 发明公开

US20240297202A1 IMAGING ELEMENT, IMAGING DEVICE, AND METHOD OF MANUFACTURING IMAGING ELEMENT 审中-公开
公开(公告)号：US20240297202A1
公开(公告)日：2024-09-05
申请号：US18251630
申请日：2021-11-04
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： YILUN HE , TAKASHI MACHIDA
IPC分类号： H01L27/148 , H01L27/146 , H04N25/62
CPC分类号： H01L27/14818 , H01L27/14689 , H04N25/62
摘要： To prevent leakage of incident light to a charge holding unit of an imaging element. The pixel includes a photoelectric conversion unit disposed on a side of the light receiving face of the semiconductor substrate, a charge holding unit disposed on a side different from the light receiving face of the semiconductor substrate, and a charge transfer unit that transfers a charge to the charge holding unit, and is configured to have a rectangular shape in a light receiving face view. The charge holding unit light shielding film is configured to have a band shape adjacent to three sides including a first side that is one of the sides of the rectangle and parallel to the first side in a light receiving face view, is adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and is disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light. The charge transfer unit light shielding film is configured to have a band shape adjacent to three sides including a second side that is a side facing the first side in a light receiving face view and parallel to the second side, and is configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view.

3. 发明公开

US20240251181A1 DEVICE AND METHOD FOR PROCESSING SPECTRUM DATA OF IMAGE SENSOR 审中-公开
公开(公告)号：US20240251181A1
公开(公告)日：2024-07-25
申请号：US18602787
申请日：2024-03-12
申请人： SAMSUNG ELECTRONICS CO., LTD. , Korea University Research and Business Foundation
发明人： Suyeon Lee , Q-Han Park , Unjeong Kim , Hyunjun Ma
IPC分类号： H04N25/62 , H04N9/67
CPC分类号： H04N25/62 , H04N9/67
摘要： Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

4. 发明公开

US20240171866A1 IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD 审中-公开
公开(公告)号：US20240171866A1
公开(公告)日：2024-05-23
申请号：US18298242
申请日：2023-04-10
申请人： SK hynix Inc.
发明人： Jun Hyeok CHOI , Dae Hyun LEE
IPC分类号： H04N23/81 , H04N23/84 , H04N25/10 , H04N25/62
CPC分类号： H04N23/81 , H04N23/84 , H04N25/10 , H04N25/62
摘要： An image processing device includes a memory for storing reference color ratios and crosstalk values of each of light source images acquired by sensing light sources having different wavelengths. The image processing device also includes a processor for receiving an image including a plurality of regions each including outer pixel values and inner pixel values of the same color, and correcting the outer pixel values or the inner pixel values by using difference values between the respective reference color ratios and a color ratio of the image as weights of the crosstalk values.

5. 发明授权

US11765474B2 Pixel arrangement, image sensor and method of operating a pixel arrangement 有权
公开(公告)号：US11765474B2
公开(公告)日：2023-09-19
申请号：US17818938
申请日：2022-08-10
申请人： ams Sensors USA Inc. , ams Sensors Belgium BVBA
发明人： Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号： H04N25/59 , H04N25/778 , H04N25/75 , H04N25/531 , H04N25/585 , H04N25/62 , H04N25/583 , H01L27/146
CPC分类号： H04N25/59 , H01L27/14612 , H01L27/14643 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
摘要： In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.

6. 发明公开

US20240298893A1 EXAMINATION APPARATUS 审中-公开
公开(公告)号：US20240298893A1
公开(公告)日：2024-09-12
申请号：US18593789
申请日：2024-03-01
申请人： CANON KABUSHIKI KAISHA
发明人： HIROTO KANO
IPC分类号： A61B3/00 , A61B3/103 , A61B3/15 , H04N25/62
CPC分类号： A61B3/0025 , A61B3/0008 , A61B3/103 , A61B3/15 , H04N25/62
摘要： An examination apparatus detecting first reflected light from a first eye of a subject and second reflected light from a second eye of the subject includes an imaging device, and a processing unit. The imaging device includes pixels each including a first photoelectric conversion unit and a second photoelectric conversion unit. The processing unit includes a unit configured to acquire a first signal based on the first reflected light entering the first photoelectric conversion units and a second signal based on the second reflected light entering the second photoelectric conversion units, a unit configured to acquire crosstalk amounts of the first and second signals based on information about positions of the first and second eyes, and a unit configured to generate correction signals based on the first and second signals and amounts of the crosstalk.

7. 发明公开

US20240147094A1 IMAGING ELEMENT, IMAGING DEVICE, MONITORING DEVICE, AND METHOD FOR CONTROLLING IMAGING ELEMENT 审中-公开
公开(公告)号：US20240147094A1
公开(公告)日：2024-05-02
申请号：US18406383
申请日：2024-01-08
申请人： CANON KABUSHIKI KAISHA
发明人： ATSUSHI KANDORI , TOMOYA ONISHI
IPC分类号： H04N25/71 , H04N25/445 , H04N25/62 , H04N25/77
CPC分类号： H04N25/745 , H04N25/445 , H04N25/62 , H04N25/77
摘要： An imaging element having a plurality of pixels, wherein the plurality of pixels have stored charge reset periodically, at least in some of the plurality of pixels, first readout processing in which stored charge by first exposure is read out is performed, first signal processing based on a first pixel signal read out by the first readout processing is performed, whether to perform second readout processing in which stored charge by second exposure is read out and second signal processing based on a second pixel signal read out by the second readout processing is determined, in response to a result of the first signal processing, and the first readout processing, the first signal processing, and the second readout processing are performed within one cycle of reset which is performed periodically.

8. 发明授权

US11895418B2 Image sensing device using adaptively adjusted pre-charge current 有权
公开(公告)号：US11895418B2
公开(公告)日：2024-02-06
申请号：US17468295
申请日：2021-09-07
申请人： SK hynix Inc.
发明人： Yu Jin Park , Nam Ryeol Kim , Kang Bong Seo , Jeong Eun Song , Jung Soon Shin , Seung Hwan Lee
IPC分类号： H04N25/75 , H04N25/62 , H04N25/709 , H04N25/771 , H04N25/772
CPC分类号： H04N25/75 , H04N25/62 , H04N25/709 , H04N25/771 , H04N25/772
摘要： An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

9. 发明授权

US11799046B2 Solid-state imaging element and imaging device with avalanche photodiode 有权
公开(公告)号：US11799046B2
公开(公告)日：2023-10-24
申请号：US16875261
申请日：2020-05-15
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Yuhi Yorikado , Atsushi Toda , Susumu Inoue
IPC分类号： H01L31/107 , G02B3/00 , H01L27/14 , H01L27/146 , H01L31/0224 , H01L31/0232 , H04N25/62 , H04N25/76 , H04N25/70 , H04N25/13
CPC分类号： H01L31/107 , G02B3/00 , H01L27/14 , H01L27/146 , H01L27/14603 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L31/02327 , H01L31/022408 , H04N25/134 , H04N25/62 , H04N25/70 , H04N25/76 , G02B3/0056
摘要： To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.

10. 发明授权

US11792548B2 Photoelectric conversion device, photoelectric conversion system, and moving body 有权
公开(公告)号：US11792548B2
公开(公告)日：2023-10-17
申请号：US18156046
申请日：2023-01-18
申请人： CANON KABUSHIKI KAISHA
发明人： Mahito Shinohara
IPC分类号： H04N25/75 , H01L27/146 , H01L31/107 , H01L31/02 , H04N25/62 , H04N25/76
CPC分类号： H04N25/75 , H01L27/14612 , H01L27/14643 , H01L31/02027 , H01L31/107 , H04N25/62 , H04N25/76
摘要： A photoelectric conversion device includes a photoelectric conversion region, a readout circuit, and a counting circuit. The photoelectric conversion region is configured to generate a signal charge. The readout circuit is configured to, when reading out a signal that is based on the signal charge generated at the photoelectric conversion region, selectively perform first readout for reading out the signal using avalanche multiplication that is based on the signal charge and second readout for reading out the signal without causing avalanche multiplication to occur with respect to at least a part of the signal charge. The counting circuit is configured to count a number of occurrences of avalanche current which is caused to occur by avalanche multiplication in the first readout.

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