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1. 发明公开

US20240388815A1 IMAGING ELEMENT AND IMAGING DEVICE 审中-公开
公开(公告)号：US20240388815A1
公开(公告)日：2024-11-21
申请号：US18685715
申请日：2022-08-22
申请人： NIKON CORPORATION
发明人： Shutaro KATO , Osamu SARUWATARI , Wataru FUNAMIZU
IPC分类号： H04N25/772 , H04N23/745 , H04N25/531 , H04N25/62 , H04N25/778 , H04N25/79
CPC分类号： H04N25/772 , H04N23/745 , H04N25/778 , H04N25/79 , H04N25/531 , H04N25/62
摘要： An imaging element includes a first semiconductor substrate having a pixel unit in which a plurality of pixels are disposed, each pixel including a photoelectric conversion unit that converts light to an electric charge, a retention unit that retains the electric charge, a first transfer unit that transfers the electric charge from the photoelectric conversion unit to the retention unit, an accumulation unit that accumulates the electric charge, a second transfer unit that transfers the electric charge from the retention unit to the accumulation unit, and an output unit that outputs a signal based on the electric charge and a second semiconductor substrate having a control circuit unit that is disposed at a position opposing the pixel unit and that controls the first transfer unit and/or the second transfer unit, and a peripheral circuit unit that is disposed outside of the control circuit unit and that controls the output unit.

2. 发明公开

US20240387579A1 SOLID-STATE IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20240387579A1
公开(公告)日：2024-11-21
申请号：US18788890
申请日：2024-07-30
申请人： SONY GROUP CORPORATION
发明人： Atsushi MASAGAKI , Yusuke TANAKA
IPC分类号： H01L27/146 , G02B7/34 , H01L21/76 , H04N25/62 , H04N25/76 , H04N25/778
CPC分类号： H01L27/14621 , G02B7/34 , H01L21/76 , H01L27/14605 , H01L27/14607 , H01L27/14627 , H01L27/1463 , H01L27/14641 , H01L27/14612 , H01L27/1464 , H04N25/62 , H04N25/76 , H04N25/778
摘要： The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.

3. 发明公开

US20240305905A1 OVERLIGHT AMOUNT DETECTION CIRCUIT, LIGHT RECEIVING ELEMENT, AND ELECTRONIC DEVICE 审中-公开
公开(公告)号：US20240305905A1
公开(公告)日：2024-09-12
申请号：US18666112
申请日：2024-05-16
申请人： Sony Semiconductor Solutions Corporation
发明人： Junichiro Kusuda
IPC分类号： H04N25/62 , H04N25/75 , H04N25/77
CPC分类号： H04N25/62 , H04N25/75 , H04N25/77
摘要： An overlight amount detection circuit (1) according to the present disclosure includes a MOS transistor and a high-impedance element (Ca). A source of the MOS transistor (Mn1) is connected to a vertical signal line (VSL) of an image sensor. The high-impedance element (Ca) is connected to a drain of the MOS transistor (Mn1). The overlight amount detection circuit (1) detects a potential fluctuation of the vertical signal line (VSL) based on a potential defined by a gate potential of the MOS transistor (Mn1), and outputs a potential of a contact point between the drain of the MOS transistor (Mn1) and the high-impedance element (Ca) as a signal indicating an overlight amount detection result.

4. 发明公开

US20240297202A1 IMAGING ELEMENT, IMAGING DEVICE, AND METHOD OF MANUFACTURING IMAGING ELEMENT 审中-公开
公开(公告)号：US20240297202A1
公开(公告)日：2024-09-05
申请号：US18251630
申请日：2021-11-04
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： YILUN HE , TAKASHI MACHIDA
IPC分类号： H01L27/148 , H01L27/146 , H04N25/62
CPC分类号： H01L27/14818 , H01L27/14689 , H04N25/62
摘要： To prevent leakage of incident light to a charge holding unit of an imaging element. The pixel includes a photoelectric conversion unit disposed on a side of the light receiving face of the semiconductor substrate, a charge holding unit disposed on a side different from the light receiving face of the semiconductor substrate, and a charge transfer unit that transfers a charge to the charge holding unit, and is configured to have a rectangular shape in a light receiving face view. The charge holding unit light shielding film is configured to have a band shape adjacent to three sides including a first side that is one of the sides of the rectangle and parallel to the first side in a light receiving face view, is adjacent to a semiconductor region including the charge transfer unit in a light receiving face view, and is disposed in the pixel between the photoelectric conversion unit and the charge holding unit to shield incident light. The charge transfer unit light shielding film is configured to have a band shape adjacent to three sides including a second side that is a side facing the first side in a light receiving face view and parallel to the second side, and is configured to be disposed in the pixel between the photoelectric conversion unit and the charge transfer unit to shield incident light and have a shape which has an end portion overlapping an end portion of the charge holding unit light shielding film in a light receiving face view.

5. 发明公开

US20240251181A1 DEVICE AND METHOD FOR PROCESSING SPECTRUM DATA OF IMAGE SENSOR 审中-公开
公开(公告)号：US20240251181A1
公开(公告)日：2024-07-25
申请号：US18602787
申请日：2024-03-12
申请人： SAMSUNG ELECTRONICS CO., LTD. , Korea University Research and Business Foundation
发明人： Suyeon Lee , Q-Han Park , Unjeong Kim , Hyunjun Ma
IPC分类号： H04N25/62 , H04N9/67
CPC分类号： H04N25/62 , H04N9/67
摘要： Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

6. 发明公开

US20240171866A1 IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD 审中-公开
公开(公告)号：US20240171866A1
公开(公告)日：2024-05-23
申请号：US18298242
申请日：2023-04-10
申请人： SK hynix Inc.
发明人： Jun Hyeok CHOI , Dae Hyun LEE
IPC分类号： H04N23/81 , H04N23/84 , H04N25/10 , H04N25/62
CPC分类号： H04N23/81 , H04N23/84 , H04N25/10 , H04N25/62
摘要： An image processing device includes a memory for storing reference color ratios and crosstalk values of each of light source images acquired by sensing light sources having different wavelengths. The image processing device also includes a processor for receiving an image including a plurality of regions each including outer pixel values and inner pixel values of the same color, and correcting the outer pixel values or the inner pixel values by using difference values between the respective reference color ratios and a color ratio of the image as weights of the crosstalk values.

7. 发明授权

US11765474B2 Pixel arrangement, image sensor and method of operating a pixel arrangement 有权
公开(公告)号：US11765474B2
公开(公告)日：2023-09-19
申请号：US17818938
申请日：2022-08-10
申请人： ams Sensors USA Inc. , ams Sensors Belgium BVBA
发明人： Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号： H04N25/59 , H04N25/778 , H04N25/75 , H04N25/531 , H04N25/585 , H04N25/62 , H04N25/583 , H01L27/146
CPC分类号： H04N25/59 , H01L27/14612 , H01L27/14643 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
摘要： In an embodiment a pixel arrangement includes at least one photodiode configured to convert electromagnetic radiation into a respective charge signal, a transfer gate between the photodiode and a capacitance for transferring the respective charge signal to the capacitance, a reset gate electrically coupled to the capacitance, the reset gate configured to reset the capacitance, an amplifier electrically connected to the capacitance and configured to generate, based on the respective charge signal and on a sensitivity mode, a respective amplified signal being a low sensitivity signal or a high sensitivity signal, respectively, wherein the low sensitivity signal and the high sensitivity signal are based on a common noise level, a first capacitor configured to store the high sensitivity signal, a second capacitor configured to store the low sensitivity signal, a first switch between an output terminal of the amplifier and the first capacitor and a second switch between the output terminal of the amplifier and the second capacitor.

8. 发明公开

US20240334081A1 IMAGING ELEMENT AND IMAGING DEVICE 审中-公开
公开(公告)号：US20240334081A1
公开(公告)日：2024-10-03
申请号：US18578911
申请日：2022-03-16
申请人： Sony Semiconductor Solutions Corporation
发明人： Kazumasa Hirano , Kazuhiro Itani , Sumie Tanoue , Shigeru Kanematsu
IPC分类号： H04N25/62 , H04N25/77
CPC分类号： H04N25/62 , H04N25/77
摘要： Imaging elements and imaging devices that reduce leakage of electric charges in a photoelectric conversion unit are disclosed. In one example, an imaging element includes photoelectric conversion units for generating an image signal corresponding to incident light. A charge retaining unit receives and retains sequentially transferred electric charges from the photoelectric conversion units. Charge transfer units are disposed for each of the photoelectric conversion units and transfer the electric charges to the charge retaining unit. Charge transfer signal lines are capacitively coupled to the charge retaining unit and are respectively connected to the charge transfer units to transmit a control signal. The charge transfer signal line connected to an earliest charge transfer unit that transfers the electric charges earliest in an image signal generation period is configured to have higher capacitance in the capacitive coupling than the other charge transfer signal lines.

9. 发明授权

US12096140B2 Self calibrating barrier modulation pixel 有权
公开(公告)号：US12096140B2
公开(公告)日：2024-09-17
申请号：US17818962
申请日：2022-08-10
申请人： ams Sensors USA Inc. , ams Sensors Belgium BVBA
发明人： Denver Lloyd , Adi Xhakoni , Scott Johnson
IPC分类号： H04N25/59 , H01L27/146 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
CPC分类号： H04N25/59 , H01L27/14612 , H01L27/14643 , H04N25/531 , H04N25/583 , H04N25/585 , H04N25/62 , H04N25/75 , H04N25/778
摘要： In an embodiment a pixel arrangement includes a photodetector configured to accumulate charge carriers by converting electromagnetic radiation, a transfer transistor electrically coupled to the photodetector, a diffusion node electrically coupled to the transfer transistor, a reset transistor electrically coupled to the diffusion node and to a pixel supply voltage and a sample-and-hold stage including at least a first capacitor and a second capacitor, an input of the sample-and-hold stage being electrically coupled to the diffusion node via an amplifier, wherein the transfer transistor is configured to be pulsed to different voltage levels for transferring parts of the accumulated charge carriers to the diffusion node, wherein at least the second capacitor is configured to store a low conversion gain signal representing a first part of the accumulated charge carriers, and wherein the first capacitor is configured to store a high conversion gain signal representing a remaining part of the accumulated charge carriers.

10. 发明公开

US20240292124A1 IMAGING DEVICE, IMAGING METHOD, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20240292124A1
公开(公告)日：2024-08-29
申请号：US18437342
申请日：2024-02-09
申请人： CANON KABUSHIKI KAISHA
发明人： KAN TAKAIWA , AIHIKO NUMATA
IPC分类号： H04N25/62 , H01L27/146 , H04N25/13 , H04N25/79
CPC分类号： H04N25/62 , H04N25/134 , H04N25/79 , H01L27/14645
摘要： An imaging device includes: a photoelectric conversion element including an avalanche photodiode; a generation unit configured to generate an image based on a signal acquired by the photoelectric conversion element; a first correction unit configured to correct the image based on first characteristic information on crosstalk between pixels of the photoelectric conversion element; and a second correction unit configured to perform pixel interpolation of the image based on second characteristic information for determining a crosstalk region to neighboring pixels of a specific pixel and the image.

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