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    • 5. 发明授权
    • Level sensitive scan design (LSSD) system
    • 液位敏感扫描设计(LSSD)系统
    • US4293919A
    • 1981-10-06
    • US66130
    • 1979-08-13
    • Sumit DasguptaPrabhakar GoelThomas W. Williams
    • Sumit DasguptaPrabhakar GoelThomas W. Williams
    • G06F7/00G01R31/3185G06F11/22G06F7/48G06F11/00H03K23/30
    • G01R31/318541G01R31/318583
    • One of the significant features of the invention, as in U.S. Pat. No. 3,783,254, is the implementation of shift register latches as basic building blocks in a logic organization and system with combinational logic networks which provide the excitation for the shift register latches. These shift register latches in the invention as well as in the patent contain a pair of latches where one is a "master" latch and another a "slave". The structure in the patent requires the "master" and "slave" latches to be part of the shift register for scan-in/scan-out. However, only the "master" may be set with data from the logic system surrounding it while the "slave" may only be set with data which previously resided in the related "master" latch. Thus, in those logic organizations where only the "master" latch output is required, the usefulness of the "slave" latch is limited to scan-in/scan-out. In the shift register latch of the invention, the "slave" latch must be set with the data that resided in the related "master" latch during scan-in/scan-out. However, in logic systems requiring the use of only one latch of the shift register latch, both "master" and "slave" latches can perform independent of the other; that is, each latch may be set with data from the logic system without any influence from the other latch in the same shift register latch. Similarly, both "master" and "slave" may feed different sections of the logic surrounding it.
    • 本发明的重要特征之一,如美国专利 第3,783,254号是在具有为移位寄存器锁存器提供激励的组合逻辑网络的逻辑组织和系统中作为基本构建块的移位寄存器锁存器的实现。 本发明以及专利中的这些移位寄存器锁存器包含一对锁存器,其中一个是“主”锁存器,另一个是“从设备”。 该专利中的结构要求“主”和“从”锁存器成为扫描/扫描输出的移位寄存器的一部分。 然而,只有“主”可以用来自其周围的逻辑系统的数据设置,而“从”只能用先前位于相关的“主”锁存器中的数据设置。 因此,在仅需要“主”锁存器输出的那些逻辑组织中,“从”锁存器的有用性仅限于扫描/扫描输出。 在本发明的移位寄存器锁存器中,“从”锁存器必须与在扫描/扫描期间存储在相关“主”锁存器中的数据一起设置。 然而,在仅需要使用移位寄存器锁存器的一个锁存器的逻辑系统中,“主”和“从”锁存器可独立于另一个执行; 也就是说,每个锁存器可以被设置有来自逻辑系统的数据,而不受来自同一移位寄存器锁存器中的另一个锁存器的任何影响。 类似地,“主”和“从”两者可以馈送围绕它的逻辑的不同部分。
    • 8. 发明授权
    • Frequency divider
    • US3983411A
    • 1976-09-28
    • US580569
    • 1975-05-27
    • Jakob LuscherAndreas Rusznyak
    • Jakob LuscherAndreas Rusznyak
    • H03K25/00G04G3/02H03K23/44H03K23/30
    • G04G3/02H03K23/44
    • A binary frequency-divider stage for an electronic wristwatch comprises a set of insulated-gate field-effect transistors (IGFETs) of one and the same conductivity type, one (T.sub.1) of these IGFETs and an associated series capacitor (C.sub.1) forming an amplifier located between one bus bar (M) of a d-c supply and a first one (11) of two a-c control leads carrying a pair of bipolar pulse trains (.PHI..sub.1, .PHI..sub.2) of opposite phase. An incoming pulse sequence (V.sub.E1), of a cadence to be halved, is in phase with the pulse train (.PHI..sub.2) on the other control lead (12) and may be derived directly therefrom (FIG. 5). The gate capacitance of the first IGFET (T.sub.1) can be charged in two steps by a first charging circuit including two IGFETs (T.sub.2, T.sub.3) which are alternately turned on by respective control pulses (.PHI..sub.1, .PHI..sub.2) applied to their gates. A normally blocked discharging circuit, including two other IGFETs (T.sub.4, T.sub.5), serves to discharge that gate capacitance, the gate capacitance of one of the IGFETs (T.sub.5) of this discharging circuit being chargeable through a second charging circuit including two further IGFETs (T.sub.6, T.sub.7). The fifth IGFET (T.sub.5) is rendered conductive upon the successive occurrence of an incoming pulse (V.sub.E1) and a first control pulse (.PHI..sub.1) respectively turning on the sixth and seventh IGFETs (T.sub.6, T.sub.7). Upon the conduction of the fourth IGFET (T.sub.4), in response to the next incoming pulse, the first IGFET (T.sub.1) is cut off whereby the next-following first control pulse (.PHI..sub.1) gives rise to an outgoing pulse (V.sub.E2) on the junction (d) between that transistor and its series capacitor (C.sub.1). The gate of the fifth IGFET (T.sub.5) is discharged through an eighth IGFET (T.sub.8) controlled by the outgoing pulse. The third IGFET (T.sub.3) may be included in the normally blocked discharging circuit for the gate of the first IGFET (T.sub.1); alternatively, to prevent a premature discharge of that gate, the common terminal of the fourth and fifth IGFETs (T.sub.4, T.sub.5) may be recharged, after each incoming pulse (VE.sub.1) discharging this common terminal, by a ninth IGFET (T.sub.9) responsive to the first control pulse (.PHI..sub.1).