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1. 发明授权

US06556085B2 Low power low noise amplifier 失效
标题翻译：低功耗低噪声放大器
公开(公告)号：US06556085B2
公开(公告)日：2003-04-29
申请号：US09828181
申请日：2001-04-09
申请人： Ick Jin Kwon , Joon Ho Gil , Hyung Cheol Shin
发明人： Ick Jin Kwon , Joon Ho Gil , Hyung Cheol Shin
IPC分类号： H03F122
CPC分类号： H03F3/193 , H03F1/223 , H03F2200/168 , H03F2200/294 , H03F2200/372
摘要： A low power low noise amplifier achieves a high power gain without increasing power consumption by sharing the bias current. The amplifier is composed of a cascade structure which consists of a parallel connected common source transistor and common gate transistor connected to a common source transistor, an inverter type structure connected to the common source transistor, and structure improving the third-order intermodulation component using the parallel connected common source transistor and common gate transistor.
摘要翻译：低功耗低噪声放大器通过共享偏置电流而不增加功耗，实现高功率增益。放大器由级联结构组成，其由并联的公共源晶体管和连接到公共源极晶体管的公共栅极晶体管组成，连接到公共源极晶体管的反相器类型结构，以及使用该方法改进三阶互调分量的结构并联公共源晶体管和公共栅极晶体管。

2. 发明授权

US06822518B1 Low noise amplifier 有权
标题翻译：低噪声放大器
公开(公告)号：US06822518B1
公开(公告)日：2004-11-23
申请号：US10249674
申请日：2003-04-29
申请人： Ying-Hsi Lin , Chinq-Shiun Chiu
发明人： Ying-Hsi Lin , Chinq-Shiun Chiu
IPC分类号： H03F122
CPC分类号： H03F3/195 , H03F1/223 , H03F1/26 , H03F2200/294 , H03F2200/372
摘要： A low noise amplifier (LNA) includes first and second transistors, an inductor, and a first resistor. The gate of the first transistor is connected to an RF input node, the source being connected to a first ground node. The source of the second transistor is connected to the drain of the first transistor, the drain of the second transistor being connected to an RF output node and the gate being connected to a first bias voltage. The first resistor and the inductor are connected in parallel between the RF output node and a supply voltage. The first resistor is selected such that the LNA resonant frequency is greater than 1.5 times an operating frequency. In a CMOS circuit, the source of the transistor in the current mirror circuit, the first ground node, and the capacitor are each connected to ground through three separate ground paths having parasitic inductances provided by three off-chip bonding wires.
摘要翻译：低噪声放大器（LNA）包括第一和第二晶体管，电感器和第一电阻器。第一晶体管的栅极连接到RF输入节点，源极连接到第一接地节点。第二晶体管的源极连接到第一晶体管的漏极，第二晶体管的漏极连接到RF输出节点，栅极连接到第一偏置电压。第一个电阻和电感并联在RF输出节点和电源电压之间。选择第一电阻器使得LNA谐振频率大于工作频率的1.5倍。在CMOS电路中，电流镜电路中的晶体管的源极，第一接地节点和电容器通过具有由三个片外键合线提供的寄生电感的三个独立的接地路径连接到地。

3. 发明授权

US06577197B1 High frequency compensation circuit for high frequency amplifiers 有权
标题翻译：高频放大器高频补偿电路
公开(公告)号：US06577197B1
公开(公告)日：2003-06-10
申请号：US10011509
申请日：2001-11-06
申请人： Andrew J. Morrish
发明人： Andrew J. Morrish
IPC分类号： H03F122
CPC分类号： H03F1/22
摘要： A cascode amplifier includes a cascode input stage that provides a first current in response to an input signal. A second current is also provided in response to the input signal, where the second current is a scaled and smaller version of the first current. The second current is low-pass filtered using parasitic capacitance present in a current mirror. A delayed mirrored current is applied to the emitters of the lower cascode transistor circuit to provide negative feedback. The current mirror amplifies the effect of the parasitic capacitance in the low-pass filter. An output node of the cascode amplifier has an associated parasitic capacitance. The parasitic capacitance at the output node in the cascode amplifier is compensated for by proper arrangement of the parasitic capacitance in the current mirror, such that the cascode amplifier is useful at higher frequencies. The improved cascode amplifier is suitable for monolithic integration.
摘要翻译：级联放大器包括共源共栅输入级，其响应于输入信号提供第一电流。还响应于输入信号提供第二电流，其中第二电流是第一电流的缩放和较小版本。第二电流使用存在于电流镜中的寄生电容进行低通滤波。延迟镜像电流被施加到下级共源共栅晶体管电路的发射极以提供负反馈。电流镜可以放大低通滤波器中寄生电容的影响。共源共栅放大器的输出节点具有相关的寄生电容。通过在电流镜中适当布置寄生电容来补偿共源共栅放大器中输出节点处的寄生电容，使得共源共栅放大器在较高频率下有用。改进的共源共栅放大器适用于单片集成。

4. 发明授权

US06466095B1 Power amplifier 失效
标题翻译：功率放大器
公开(公告)号：US06466095B1
公开(公告)日：2002-10-15
申请号：US09674065
申请日：2000-10-25
申请人： Yasuyuki Suzuki
发明人： Yasuyuki Suzuki
IPC分类号： H03F122
CPC分类号： H03F3/601 , H03F1/226 , H03G1/0029
摘要： To provide a variable gain power amplifier with wide dynamic range of transmission power, wherein power efficiency is high, distortion in the linearity is low. In an amplifier with a plurality of transistors connected with cascade, the source of transistor (103) is grounded, the gate of transistor (108) of an output stage is grounded. Further, source bias terminal (109) and drain bias terminal (110) is provided for applying prescribed voltages to the source and drain of transistor (108) of the output stage, respectively. The electric power inputted into transistor (108) of the output stage is passed through without being amplified by applying the prescribed voltages to source bias terminal (109) and drain bias terminal (110), respectively, when the electric power outputted from the output stage is made smaller than a prescribed threshold.
摘要翻译：为了提供具有宽的动态范围的发射功率的可变增益功率放大器，其中功率效率高，线性度的失真低。在具有与级联连接的多个晶体管的放大器中，晶体管（103）的源极接地，输出级的晶体管（108）的栅极接地。此外，源极偏置端子（109）和漏极偏置端子（110）被提供用于分别向输出级的晶体管（108）的源极和漏极施加规定的电压。当从输出级输出的电力分别将输入到输出级的晶体管（108）的电力通过施加规定的电压分别施加到源偏置端子（109）和漏极偏置端子（110）而不被放大被制成小于规定的阈值。

5. 发明授权

US06621348B2 Variable gain amplifier with autobiasing supply regulation 有权
标题翻译：可变增益放大器，具有自动偏置电源调节功能
公开(公告)号：US06621348B2
公开(公告)日：2003-09-16
申请号：US10001388
申请日：2001-10-25
申请人： Lawrence E. Connell , Neal W. Hollenbeck
发明人： Lawrence E. Connell , Neal W. Hollenbeck
IPC分类号： H03F122
CPC分类号： H03F1/3205 , H03F1/301 , H03F3/19 , H03F2200/72 , H03G1/0023
摘要： A high gain wide-band width RF amplifier 120 with automatic bias supply regulation. The load supply is actively adjusted in response to the amplifier's output signal level. At small output signals effective load supply voltage is minimum and at larger output signals the effective load supply voltages is maximized. The amplifier 120 includes a differential pair of field effect transistors (FETs) 102, 104 connected at common source connection 106 and biased by current bias FET 108 which is connected between common source connection 106 and amplifier signal input RFIN. A bias voltage (VB1) is applied to the gate of bias device 108 and an automatic gain control voltage (VAGC) is applied to the gates of differential FET pair 102, 104. The automatic bias supply circuit 122 is an active load and includes resistors 124, 126, capacitor 128 and a differential amplifier 130. Capacitor 128 is connected between the negative input 132 and the output 134 of differential amplifier 130. A load reference voltage VO is provided to the positive input. Resistor 124 is connected between the output 134 of differential amplifier 130 and the high gain wide-band amplifier output 136 at the drain of FET 104. Resistor 126 is connected between the output 136 at the drain of FET 104 and the negative input 132 to differential amplifier 130 providing amplifier load signal feedback.
摘要翻译：具有自动偏置电源调节功能的高增益宽带宽RF放大器120。负载电源根据放大器的输出信号电平进行主动调整。在小输出信号下，有效负载电源电压最小，而在较大的输出信号下，有效负载电源电压最大化。放大器120包括在公共源极连接106处连接并由连接在公共源极连接106和放大器信号输入RFIN之间的电流偏置FET 108偏置的差分对的场效应晶体管（FET）102,104。偏置电压（VB1）被施加到偏置装置108的栅极，并且自动增益控制电压（VAGC）被施加到差分FET对102,104的栅极。自动偏置电源电路122是有源负载，并且包括电阻 124,126，电容器128和差分放大器130.电容器128连接在差分放大器130的负输入端132和输出端134之间。负载基准电压VO被提供给正输入端。电阻器124连接在差分放大器130的输出134和FET104的漏极之间的高增益宽带放大器输出端136之间。电阻器126连接在FET104的漏极和负输入端132之间的输出端136与差分放大器130提供放大器负载信号反馈。

6. 发明授权

US06590456B2 Active cascode amplifier with an amplitude limiter 有权
公开(公告)号：US06590456B2
公开(公告)日：2003-07-08
申请号：US09907329
申请日：2001-07-17
申请人： Wenhua Yang
发明人： Wenhua Yang
IPC分类号： H03F122
CPC分类号： H03F3/45188 , H03F1/223
摘要： An active cascode amplifier circuit which includes an active cascode amplifier and an amplitude limiter. The active cascode amplifier includes an input stage, an output stage and an auxiliary amplifier and receives in a voltage input signal and outputs a voltage output signal wherein the cascode amplifier amplifies the input voltage signal. The auxiliary amplifier is provided within the circuit to increase the gain of the cascode amplifier and has an associated output. When the input stage shuts off, due to a decrease in the input voltage signal, the amplitude limiter becomes active and holds the voltage at the output of the auxiliary amplifier to a preset voltage in order to decrease the recovery time for turning the output stage on when the input voltage increases and turns the input stage on.

7. 发明授权

US06515547B2 Self-biased cascode RF power amplifier in sub-micron technical field 有权
标题翻译：亚微米技术领域的自偏置共源共栅RF功率放大器
公开(公告)号：US06515547B2
公开(公告)日：2003-02-04
申请号：US09891669
申请日：2001-06-26
申请人： Tirdad Sowlati
发明人： Tirdad Sowlati
IPC分类号： H03F122
CPC分类号： H03F1/223
摘要： A method for increasing the maximum useable supply voltage in an amplifier circuit is presented. A self-biased cascode amplifier circuit includes a first MOSFET and a second MOSFET connected in series and coupled between a DC voltage source terminal and a common terminal. An RF input signal terminal is coupled to a gate electrode of the first MOSFET, and the gate of the second MOSFET is connected between a resistor and a capacitor connected in series between the drain of the second MOSFET and the source of the first MOSFET. In preferred embodiments a unidirectionally-conducting boosting sub-circuit is coupled between a drain electrode and the gate electrode of the second MOSFET, which may comprise a diode-resistive sub-circuit, or a third MOSFET connected across a resistive voltage divider. The output of the amplifier circuit is taken from the drain electrode of the second MOSFET. These configuration permits the first and second MOSFETs to withstand a larger output voltage swing, thus permitting the use of a higher supply voltage and increased output power, without the necessity of complex biasing voltages.
摘要翻译：提出了一种用于增加放大器电路中最大可用电源电压的方法。自偏置共源共栅放大器电路包括串联连接并连接在DC电压源端子和公共端子之间的第一MOSFET和第二MOSFET。 RF输入信号端子耦合到第一MOSFET的栅电极，第二MOSFET的栅极连接在串联连接在第二MOSFET的漏极和第一MOSFET的源极之间的电阻器和电容器之间。在优选实施例中，单向传导升压子电路耦合在漏极电极和第二MOSFET的栅电极之间，该第二MOSFET可包括二极管电阻子电路或跨越电阻分压器连接的第三MOSFET。放大器电路的输出取自第二MOSFET的漏电极。这些配置允许第一和第二MOSFET承受更大的输出电压摆幅，从而允许使用更高的电源电压和增加的输出功率，而不需要复杂的偏置电压。

8. 发明授权

US06504433B1 CMOS transceiver having an integrated power amplifier 有权
公开(公告)号：US06504433B1
公开(公告)日：2003-01-07
申请号：US09663101
申请日：2000-09-15
申请人： David J. Weber , Patrick Yue , David Su
发明人： David J. Weber , Patrick Yue , David Su
IPC分类号： H03F122
CPC分类号： H01L24/06 , H01L23/66 , H01L24/48 , H01L24/49 , H01L27/088 , H01L2223/6644 , H01L2224/05554 , H01L2224/48247 , H01L2224/48257 , H01L2224/4911 , H01L2224/49171 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01031 , H01L2924/01051 , H01L2924/01052 , H01L2924/10329 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19042 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H03F1/223 , H03F3/24 , H03F3/45188 , H03F2200/06 , H03F2203/45638 , H03F2203/45652 , H04B2001/0408 , Y10S977/724 , H01L2924/00 , H01L2224/45099
摘要： The present invention provides a breakdown resistant transistor structure for amplifying communication signals. This structure includes a first NMOS transistor having a source connected to ground and a first gate for receiving the input radio frequency signal. The first gate is disposed above a first insulator and the first NMOS transistor having a first transconductance and a first breakdown voltage associated therewith. Also included is a second NMOS transistor having a source connected to the drain of the first NMOS transistor, a gate connected to the reference DC voltage, and a drain that provides the output for the amplified radio signal, the load being disposed between the reference DC voltage and the drain of the second NMOS transistor. The second gate is disposed above a second insulator, the second NMOS transistor has a second transconductance and a second breakdown voltage associated therewith, and the second insulator may be thicker than the first insulator. This results in the first transconductance being greater than the second transconductance, and the second breakdown voltage being greater than the first breakdown voltage.

9. 发明授权

US06542036B2 Low current amplifier circuit with protection against static electricity 失效
标题翻译：低电流放大器电路，防止静电
公开(公告)号：US06542036B2
公开(公告)日：2003-04-01
申请号：US09769540
申请日：2001-01-25
申请人： Keiji Kusachi
发明人： Keiji Kusachi
IPC分类号： H03F122
CPC分类号： H03F3/1935 , H03F1/226 , H03F1/523
摘要： A low current amplifier circuit which stably operates at a low current and has a reduced tendency to cause static breakdown includes first and second field-effect transistors. The first field-effect transistor has a gate with a small width for passing a small current when a bias voltage is applied to the gate to compensate for variations in threshold voltage. The second field-effect transistor has a gate with a larger width than that of the first field-effect transistor and a source connected to a drain of the first field-effect transistor. The second field-effect transistor reduces a current flowing through the first field-effect transistor due to static electricity.
摘要翻译：稳定地以低电流工作并且具有降低的引起静电击穿的趋势的低电流放大器电路包括第一和第二场效应晶体管。当偏置电压施加到栅极以补偿阈值电压的变化时，第一场效应晶体管具有用于通过小电流的小宽度的栅极。第二场效应晶体管具有比第一场效应晶体管宽的栅极和连接到第一场效应晶体管的漏极的源极。第二场效应晶体管由于静电而减小流经第一场效应晶体管的电流。

10. 发明授权

US06498533B1 Bootstrapped dual-gate class E amplifier circuit 失效
标题翻译：自举双门级E放大器电路
公开(公告)号：US06498533B1
公开(公告)日：2002-12-24
申请号：US09671911
申请日：2000-09-28
申请人： Tirdad Sowlati
发明人： Tirdad Sowlati
IPC分类号： H03F122
CPC分类号： H03K17/102 , H03F1/223 , H03F3/2176
摘要： A bootstrapped dual-gate Class E amplifier circuit includes a first MOSFET and a second MOSFET connected in series and coupled between a dc voltage source terminal and a common terminal. An rf input signal terminal is coupled to a gate electrode of the first MOSFET and a dc control voltage terminal is coupled to a gate electrode of the second MOSFET, with a unidirectionally-conducting element such as a diode-connected MOSFET being coupled between a drain electrode and the gate electrode of the second MOSFET. The output of the amplifier circuit is taken from the drain electrode of the second MOSFET. This circuit configuration permits the first and second MOSFETs to withstand a larger output voltage swing, thus permitting the use of a higher supply voltage and resulting in a substantially increased maximum output power capability for a given load value.
摘要翻译：自举双栅E类放大器电路包括串联连接并耦合在直流电压源端子和公共端子之间的第一MOSFET和第二MOSFET。 RF输入信号端子耦合到第一MOSFET的栅电极，并且直流控制电压端子耦合到第二MOSFET的栅电极，其中单向导电元件例如二极管连接的MOSFET耦合在漏极电极和第二MOSFET的栅电极。放大器电路的输出取自第二MOSFET的漏电极。该电路配置允许第一和第二MOSFET承受更大的输出电压摆幅，从而允许使用更高的电源电压，并且对于给定的负载值，导致基本上增加的最大输出功率能力。

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