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    • 1. 发明授权
    • Tapered constant “R” network for use in distributed amplifiers
    • 锥形常数“R”网络用于分布式放大器
    • US06714095B2
    • 2004-03-30
    • US10174238
    • 2002-06-18
    • Anthony M. PavioLei Zhao
    • Anthony M. PavioLei Zhao
    • H03A738
    • H01P9/00
    • A constant “R” network distributed amplifier formed in a multi-layer, low temperature co fired ceramic structure comprises multiple cascaded constant “R” networks for amplifying a signal applied thereto. Each one of the multiple cascaded constant “R” networks is formed in the ceramic structure and includes a plurality of ceramic layers each of which have a top and bottom planar surfaces which, when bonded together form the ceramic structure. A transmission line is formed on the top surfaces of each of the ceramic layers having a beginning end and a distal end and has a generally rectangular shape. The distal end of the transmission line formed on a lower ceramic layer is connected to the beginning end of the transmission line formed on the next adjacent upper ceramic layer by way of vias formed in the ceramic layers through which metal conductive material is formed there through. The transmission lines and the capacitance established between the individual layers form a LC structure. An output is provided at the middle portion of the transmission line formed on the middle ceramic layer that is coupled to the drain of a FET.
    • 形成在多层低温共烧陶瓷结构中的恒定“R”网络分布式放大器包括用于放大施加到其上的信号的多个级联常数“R”网络。 多个级联常数“R”网络中的每一个形成在陶瓷结构中,并且包括多个陶瓷层,每个陶瓷层具有顶部和底部平坦表面,当它们结合在一起形成陶瓷结构时。 在具有起始端和远端的每个陶瓷层的顶表面上形成传输线,并且具有大致矩形的形状。 形成在下陶瓷层上的传输线的前端通过形成在陶瓷层中的通孔连接到形成在下一个相邻的上陶瓷层上的传输线的起始端,通过该通孔形成金属导电材料。 传输线和在各个层之间建立的电容形成LC结构。 在形成在与FET的漏极耦合的中间陶瓷层上的传输线的中间部分处提供输出。