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1. 发明授权

US06411640B1 Distributed feedback semiconductor laser with phase shift region having polarization dependency, optical transmitter, and optical communication system using the same 失效
标题翻译：具有偏振相关性的相移区域的分布式反馈半导体激光器，使用其的光发射机和光通信系统
公开(公告)号：US06411640B1
公开(公告)日：2002-06-25
申请号：US09292018
申请日：1999-04-15
申请人： Koichiro Nakanishi
发明人： Koichiro Nakanishi
IPC分类号： H01S512
CPC分类号： H04B10/50 , H01S5/06258 , H01S5/1064 , H01S5/1243 , H01S2301/14
摘要： A distributed feedback semiconductor laser of the present invention includes a waveguide with an active layer and a diffraction grating, and a first phase shift region formed in the waveguide. The waveguide extends along a cavity-axial direction and is defined such that propagation of light in two different polarization modes is permitted in the waveguide. The first phase shift region extends along the cavity-axial direction and has a polarization dependency that an effective refractive index for propagation light of the first phase shift region differs from an effective refractive index for propagation light of a region of the waveguide other than the first phase shift region such that a phase shift of a quarter wavelength of the propagation light is created for one of the two polarization modes and a phase shift of a half wavelength of the propagation light is created for the other of the two polarization modes in the first phase shift region.
摘要翻译：本发明的分布反馈半导体激光器包括具有有源层和衍射光栅的波导和形成在波导中的第一相移区域。波导沿空腔 - 轴向延伸，并且被定义为使得在波导中允许两种不同偏振模式的光的传播。第一相移区域沿空腔 - 轴向方向延伸，并且具有偏振依赖性，第一相移区域的传播光的有效折射率不同于除了第一相移区域之外的波导区域的传播光的有效折射率相移区域，使得对于两个偏振模式中的一个产生传播光的四分之一波长的相移，并且在第一个偏振模式中的两个偏振模式中的另一个产生传播光的半波长的相移相移区域。

2. 发明授权

US06728288B2 DFB semiconductor laser device 失效
标题翻译： DFB半导体激光器件
公开(公告)号：US06728288B2
公开(公告)日：2004-04-27
申请号：US09987536
申请日：2001-11-15
申请人： Masaki Funabashi , Satoshi Arakawa
发明人： Masaki Funabashi , Satoshi Arakawa
IPC分类号： H01S512
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/1228 , H01S5/209 , H01S5/3403 , H01S5/3407 , H01S5/34306
摘要： A distributed feedback (DFB) semiconductor laser device has a multiple-quantum-well (MQW) structure and a diffraction grating formed in the MQW structure. The diffraction grating includes a grating structure formed in QW layers and a barrier layer of the MQW structure and an embedded layer embedded in the grating structure. One of the QW layers and the barrier layers has an etching rate lower than the etching rate of the other layers of the MQW structure and functions as an etching stop layer during etching of the MQW structure for forming the diffraction grating.
摘要翻译：分布式反馈（DFB）半导体激光器件具有多量子阱（MQW）结构和在MQW结构中形成的衍射光栅。衍射光栅包括形成在QW层中的光栅结构和MQW结构的势垒层以及嵌入光栅结构中的嵌入层。 QW层和阻挡层中的一个具有低于MQW结构的其它层的蚀刻速率的蚀刻速率，并且在用于形成衍射光栅的MQW结构的蚀刻期间用作蚀刻停止层。

3. 发明授权

US06330268B1 Distributed feedback semiconductor laser 有权
标题翻译：分布式反馈半导体激光器
公开(公告)号：US06330268B1
公开(公告)日：2001-12-11
申请号：US09382700
申请日：1999-08-25
申请人： Yidong Huang
发明人： Yidong Huang
IPC分类号： H01S512
CPC分类号： H01S5/12 , H01S5/1228 , H01S5/1246
摘要： A distributed feedback semiconductor laser (DFB laser) in which light feedback is performed by using a diffraction grating, and in which influence of external feedback noises can be decreased to suppress fluctuation of an optical output. The DFB laser comprises a diffraction grating structure portion which constitutes a resonator and which is divided into a plurality of regions along the longitudinal direction of the resonator, and one or more phase shift portions each disposed between adjacent regions of the diffraction grating structure portion, wherein total phase shift obtained by all of the phase shift portions has a quantity corresponding to &lgr;/n, where &lgr; is an oscillation wavelength, and n is an integer larger than 4 (n>4). The total phase shift may have a quantity corresponding to a value within a range between &lgr;/5 and &lgr;/8.
摘要翻译：通过使用衍射光栅进行光反馈并且可以减小外部反馈噪声的影响的分布反馈半导体激光器（DFB激光器），以抑制光输出的波动。 DFB激光器包括衍射光栅结构部分，该衍射光栅结构部分构成谐振器，并且沿着谐振器的纵向被分成多个区域，以及一个或多个相移部分，每个相移部分设置在衍射光栅结构部分的相邻区域之间，其中由所有相移部分获得的总相移具有对应于lambd / n的量，其中lambd是振荡波长，n是大于4（n> 4）的整数。总相移可以具有与lambd / 5和lambd / 8之间的范围内的值相对应的量。

4. 发明授权

US06707839B1 Optical semiconductor device and process for producing the same 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US06707839B1
公开(公告)日：2004-03-16
申请号：US09721662
申请日：2000-11-27
申请人： Yasutaka Sakata
发明人： Yasutaka Sakata
IPC分类号： H01S512
CPC分类号： H01S5/026 , G02F2001/0157 , H01S5/0265 , H01S5/1215 , H01S5/2077 , H01S5/2272 , H01S5/4031 , H01S5/4087
摘要： A resist is coated on a substrate. The resist is exposed to a pattern of a plurality of diffraction gratings for setting pitches corresponding respectively to oscillation wavelengths for the plurality of semiconductor lasers and for setting heights of the diffraction gratings which provide an identical coupling coefficient independently of the oscillation wavelengths. The substrate is etched in such a manner that the level of etching per unit time is identical. A stripe mask is patterned according to the arrangement of the diffraction gratings. A laser active layer is formed on each of the diffraction gratings by selective MOVPE growth. An electrode is formed on each of the laser active layer on its top surface and the backside of the substrate. By virtue of this constitution, an optical semiconductor device and a process for producing the same can be realized which, when a plurality of semiconductor lasers are simultaneously formed on a single semiconductor substrate, can prevent a variation in coupling coefficient.
摘要翻译：抗蚀剂涂覆在基材上。抗蚀剂暴露于多个衍射光栅的图案，用于设置分别对应于多个半导体激光器的振荡波长的间距，以及设置提供与振荡波长无关的相同耦合系数的衍射光栅的高度。以使得每单位时间的蚀刻水平相同的方式蚀刻衬底。根据衍射光栅的布置图案化条纹掩模。通过选择性MOVPE生长在每个衍射光栅上形成激光有源层。在其顶表面和基板的背面上的每个激光活性层上形成电极。通过这种结构，可以实现光半导体器件及其制造方法，当在单个半导体衬底上同时形成多个半导体激光器时，可以防止耦合系数的变化。

5. 发明授权

US06643309B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06643309B1
公开(公告)日：2003-11-04
申请号：US10049601
申请日：2002-02-14
申请人： Mitsunobu Gotoda
发明人： Mitsunobu Gotoda
IPC分类号： H01S512
CPC分类号： H01S5/06256 , H01S5/0421 , H01S5/0425 , H01S5/06258 , H01S5/1203 , H01S5/1209 , H01S5/1215
摘要： A high performance single-wavelength semiconductor laser device having stable and high-speed operation includes an active region, a forward light reflection region located in front of the active region, a backward light reflection region located behind the active region, and a phase control region located in proximity to the active layer, all sandwiched between an upper cladding layer and a lower cladding layer. The forward light reflection region and the backward light reflection region include alternate diffraction grating portions and non-diffracting portions alternately. The laser oscillates at a wavelength which corresponds to the current flowing in the diffraction grating portion. A current blocking layer is located on the non-diffracting portion of at least one of the forward light reflection region and the backward light reflection region for blocking current from flowing into the non-diffracting portion.
摘要翻译：具有稳定高速运转的高性能单波长半导体激光器件包括有源区，位于有源区前面的正射反射区域，位于有源区后面的反射光反射区域和相位控制区域位于活性层附近，全部夹在上包层和下包层之间。正射光反射区域和反射光反射区域交替地包括交替的衍射光栅部分和非衍射部分。激光器以对应于在衍射光栅部分中流动的电流的波长振荡。电流阻挡层位于前向光反射区域和反射光反射区域中的至少一个的非衍射部分上，用于阻止电流流入非衍射部分。

6. 发明授权

US06188711B1 Polarization-controlled VCSELs using externally applied uniaxial stress 失效
标题翻译：使用外部施加的单轴应力的极化控制VCSEL
公开(公告)号：US06188711B1
公开(公告)日：2001-02-13
申请号：US08993006
申请日：1997-12-18
申请人： Scott W. Corzine , Michael R. T. Tan , Albert T. Yuen , Dubravko I. Babic
发明人： Scott W. Corzine , Michael R. T. Tan , Albert T. Yuen , Dubravko I. Babic
IPC分类号： H01S512
CPC分类号： H01S5/18355 , H01S5/0607
摘要： A Vertical Cavity Surface-Emitting Laser (VCSEL) assembly in which the polarization is locked to a specified direction that is the same for all VCSELs. A VCSEL according to the present invention includes a VCSEL having a top mirror region, a bottom mirror region, a light generation region between the top and bottom mirror regions, a conducting substrate and a bottom electrode. The bottom mirror region is sandwiched between the conducting substrate and the light generation region, and the conducting substrate is sandwiched between the bottom electrode and the bottom mirror region. The assembly also includes a mounting substrate having top and bottom surfaces, the VCSEL being mechanically coupled to the mounting substrate. The mounting substrate includes a means for defining a first axis. The assembly includes a means for causing the mounting substrate to flex about the first axis thereby inducing a strain in the light generation region which locks the polarization into a mode determined by the first axis. In one embodiment of the present invention, the first axis is defined by a channel in the mounting substrate. The mounting substrate is caused to flex by the application of an adhesive layer applied between the mounting substrate and a mounting surface. The adhesive layer has a thermal coefficient of expansion different from the mounting substrate. In another embodiment, trenches whose direction defines the first axis are located in the top mirror region of the VCSEL.
摘要翻译：垂直腔表面发射激光（VCSEL）组件，其中偏振被锁定到对于所有VCSEL相同的指定方向。根据本发明的VCSEL包括VCSEL，其具有顶部反射镜区域，底部反射镜区域，顶部和底部反射镜区域之间的发光区域，导电基底和底部电极。底部反射镜区域夹在导电衬底和光产生区域之间，并且导电衬底夹在底部电极和底部镜像区域之间。组件还包括具有顶表面和底表面的安装衬底，VCSEL机械地联接到安装衬底。安装基板包括用于限定第一轴线的装置。该组件包括用于使安装基板围绕第一轴弯曲的装置，从而在将偏振锁定为由第一轴确定的模式的光产生区域中引起应变。在本发明的一个实施例中，第一轴由安装基板中的通道限定。通过施加施加在安装基板和安装表面之间的粘合剂层，使安装基板挠曲。粘合剂层具有与安装基板不同的热膨胀系数。在另一个实施例中，其方向限定第一轴的沟槽位于VCSEL的顶部反射镜区域中。

7. 发明授权

US06574261B2 Distributed feedback semiconductor laser 失效
公开(公告)号：US06574261B2
公开(公告)日：2003-06-03
申请号：US09984051
申请日：2001-10-26
申请人： Yidong Huang
发明人： Yidong Huang
IPC分类号： H01S512
CPC分类号： H01S5/1228 , H01S5/12 , H01S5/1246
摘要： A distributed feedback semiconductor laser (DFB laser) in which light feedback is performed by using a diffraction grating, and in which influence of external feedback noises can be decreased to suppress fluctuation of an optical output. The DFB laser comprises a diffraction grating structure portion which constitutes a resonator and which is divided into a plurality of regions along the longitudinal direction of the resonator, and one or more phase shift portions each disposed between adjacent regions of the diffraction grating structure portion, wherein total phase shift obtained by all of the phase shift portions has a quantity corresponding to &lgr;/n, where &lgr; is an oscillation wavelength, and n is an integer larger than 4 (n>4) and less than or equal to 16 (n≦16). The total phase shift may have a quantity corresponding to a value within a range between &lgr;/5 and &lgr;/8.

8. 发明授权

US06377597B1 Gallium nitride semiconductor light emitting element with active layer having multiplex quantum well structure and semiconductor laser light source device 有权
标题翻译：具有多个量子阱结构的有源层的氮化镓半导体发光元件和半导体激光光源装置
公开(公告)号：US06377597B1
公开(公告)日：2002-04-23
申请号：US09380537
申请日：1999-09-02
申请人： Toshiyuki Okumura
发明人： Toshiyuki Okumura
IPC分类号： H01S512
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/22 , H01S5/3415 , H01S5/343 , H01S5/34333
摘要： A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers (14) and the barrier layer (15) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (14). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.
摘要翻译：氮化镓半导体激光装置具有在n型包覆层（5）和p型包覆层（9）之间至少含有铟和镓的氮化物半导体构成的有源层（6）。有源层（6）由插入量子阱层之间的两个量子阱层（14）和阻挡层（15）组成，并构成半导体激光器件的振荡部分。量子阱层（14）和阻挡层（15）的厚度优选为10nm以下。在该半导体激光器件中，电子和空穴可均匀分布在两个量子阱层（14）中。此外，电子和空穴被有效地注入量子阱层，电子和空穴已经通过重组已经消失。因此，半导体激光器件具有优异的激光振荡特性。

9. 发明授权

US06301283B1 Distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：US06301283B1
公开(公告)日：2001-10-09
申请号：US09237890
申请日：1999-01-27
申请人： Nong Chen , Kiyoshi Takei , Yoshiaki Watanabe , Kiyofumi Chikuma
发明人： Nong Chen , Kiyoshi Takei , Yoshiaki Watanabe , Kiyofumi Chikuma
IPC分类号： H01S512
CPC分类号： H01S5/12 , H01S5/1014 , H01S5/1064 , H01S5/2213 , H01S5/2231
摘要： A distributed feedback semiconductor laser including a semiconductor substrate having a bottom surface and a top surface; an active layer formed on the top surface of the semiconductor substrate; a ridge stripe formed on the active layer having a first surface and extending in a first direction; a periodic structure that is periodic in the first direction; a plurality of p-type electrodes formed on the first surface of the ridge stripe; and an n-type electrode formed on the bottom surface of the semiconductor substrate. The first surface of the ridge stripe is parallel with a growth plane of the active layer, the first surface having at least two different widths in a direction perpendicular to the first direction.
摘要翻译：一种分布式反馈半导体激光器，包括具有底表面和顶表面的半导体衬底; 形成在所述半导体衬底的顶表面上的有源层; 在有源层上形成的具有第一表面并沿第一方向延伸的脊条; 在第一方向上是周期性的周期性结构; 形成在所述脊条的第一表面上的多个p型电极; 以及形成在半导体衬底的底表面上的n型电极。脊条的第一表面与有源层的生长平面平行，第一表面在垂直于第一方向的方向上具有至少两个不同的宽度。

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