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1. 发明授权

US07214632B2 Using selective deposition to form phase-change memory cells 有权
标题翻译：使用选择性沉积形成相变记忆单元
公开(公告)号：US07214632B2
公开(公告)日：2007-05-08
申请号：US10368759
申请日：2003-02-19
申请人： Chien Chiang
发明人： Chien Chiang
IPC分类号： H01L31/0328 , H01L29/03 , H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , Y10S438/90
摘要： A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.
摘要翻译：可以通过在相变存储器孔中选择性地沉积下电极来形成相变存储单元。此后，可以选择性地沉积在选择性沉积的下电极和围绕孔的上表面上的粘附促进材料。通过使用选择性沉积技术，可以将粘合促进材料定位在需要的位置，并且下部电极可以以一些实施例中可以减少分流电流，降低器件电流要求并增加动态范围的方式来定义。

2. 发明授权

US07176478B2 Nanotube-based vacuum devices 有权
标题翻译：基于纳米管的真空装置
公开(公告)号：US07176478B2
公开(公告)日：2007-02-13
申请号：US10764168
申请日：2004-01-26
申请人： Alexander Kastalsky , Sergey Shokhor
发明人： Alexander Kastalsky , Sergey Shokhor
IPC分类号： H01L29/03
CPC分类号： B82Y10/00 , H01J19/24 , H01J21/04 , H01J21/105 , H01J2201/30469 , Y10S977/876 , Y10S977/936 , Y10S977/938
摘要： New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of the nanotubes are also considered to multiply the output current. Two- and three-terminal device configurations are discussed. In all the cases considered, the device designs are such that both input and output capacitances are extremely low, while the efficiency of the electron extraction into vacuum is very high, so that the estimated operational frequencies are expected to be in a tera-hertz range. New vacuum triode structure with ballistic electron propagation along the nanotube is also considered.
摘要翻译：提出了新的混合真空电子器件，其中电子从纳米管中提取为真空。每个纳米管或者单独地放置在阴极电极上或正常地生长到阴极平面。纳米管阵列也被认为是乘以输出电流。讨论了两端和三端设备配置。在所有考虑的情况下，器件设计使得输入和输出电容都非常低，而电子提取到真空中的效率非常高，所以估计的工作频率预期为tera-Hz范围。也考虑了具有沿纳米管的弹道电子传播的新的真空三极管结构。

3. 发明授权

US06873385B2 Liquid crystal display with selectively placed barriers 有权
标题翻译：具有选择性放置屏障的液晶显示器
公开(公告)号：US06873385B2
公开(公告)日：2005-03-29
申请号：US09949633
申请日：2001-09-12
申请人： Kimikazu Matsumoto
发明人： Kimikazu Matsumoto
IPC分类号： G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L31/036 , H01L31/0376 , H01L29/03
CPC分类号： G02F1/133784 , G02F1/134363 , G02F1/1368
摘要： An LCD (Liquid Crystal Display) is provided in which shavings of an alignment layer are accumulated only in regions surrounding a TFT (Thin Film Transistor) in a TFT substrate in a concentrated manner. A barrier made of an insulating material is formed in a manner to cover portions surrounding the TFT including step portions of the TFT on a back channel in the TFT substrate and to be disposed at a place on a downstream side in a rubbing direction.
摘要翻译：提供了一种LCD（液晶显示器），其中取向层的刨光仅在TFT基板中的TFT（薄膜晶体管）周围的区域中以集中的方式积聚。以绝缘材料形成的屏障形成为在TFT基板背面的沟道上覆盖包围TFT的台阶部分的TFT的部分，并设置在摩擦方向的下游侧的位置。

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