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1. 发明授权

US06826254B2 Radiation applying apparatus 失效
标题翻译：辐射施加装置
公开(公告)号：US06826254B2
公开(公告)日：2004-11-30
申请号：US10285441
申请日：2002-11-01
申请人： Kazumasa Mihara , Yuichiro Kaminou , Akira Ishibashi
发明人： Kazumasa Mihara , Yuichiro Kaminou , Akira Ishibashi
IPC分类号： G21K500
CPC分类号： H01J35/04 , A61B6/4429 , A61N5/01 , A61N5/10 , G21G1/12 , G21H5/02 , H01J2235/186
摘要： An x-ray treatment apparatus includes an x-ray generating device, a head unit, a manipulator and a microwave source. The x-ray generating device produces x-rays, by letting electrons, which have been emitted from an electron gun, be accelerated by a linear accelerator and strike a target. The acceleration of electrons is effected by microwaves. The x-ray generating device is accommodated in the head unit. The head unit is attached to a distal end portion of the manipulator. The manipulator positions the head unit such that x-rays emitted from the head unit may be applied to a part for medical treatment in a patient. The microwave source is disposed at a proximal end portion of the manipulator. Microwaves are propagated from the microwave source to the accelerator through a waveguide.
摘要翻译： X射线治疗装置包括X射线产生装置，头部单元，机械手和微波源。 X射线产生装置通过使从电子枪发射的电子被线性加速器加速并产生目标而产生X射线。电子的加速由微波进行。 X射线产生装置容纳在头单元中。头单元附接到操纵器的远端部分。操纵器定位头单元，使得从头单元发射的x射线可以施加到患者体内用于医疗的部件。微波源设置在操纵器的近端部分。微波通过波导从微波源传播到加速器。

2. 发明授权

US06777692B2 Method and apparatus for irradiating product packages 失效
标题翻译：用于照射产品包装的方法和装置
公开(公告)号：US06777692B2
公开(公告)日：2004-08-17
申请号：US10150755
申请日：2002-05-17
申请人： Yves Jongen
发明人： Yves Jongen
IPC分类号： G21K500
CPC分类号： B07C5/3416 , A61L2/08 , A61L2/20 , B65B55/02
摘要： The present invention is related to an apparatus and method for irradiating product packages (1). One measures the effective dimension of a product package (1), one processes a product package (1) having everywhere an effective thickness below a predefined threshold with an e-beam source (17), and other packages with either a gas sterilisant device or an X-ray or gamma source. Packages for treating with the X-ray or gamma source are grouped in layers and stacked, in order to optimise the throughput of the apparatus.
摘要翻译：本发明涉及一种用于照射产品包装（1）的装置和方法。一个测量产品包（1）的有效尺寸，一个处理具有电子束源（17）的具有低于预定阈值的有效厚度的产品包（1），以及具有气体灭菌装置或其它包装 X射线或伽玛源。用于X射线或伽马源处理的包装被分层并堆叠，以优化装置的生产量。

3. 发明授权

US06760400B2 Exposing method and semiconductor device fabricated by the exposing method 失效
标题翻译：曝光方法和通过曝光方法制造的半导体器件
公开(公告)号：US06760400B2
公开(公告)日：2004-07-06
申请号：US10211309
申请日：2002-08-05
申请人： Hiroshi Watanabe , Toyoki Kitayama , Kouji Kise
发明人： Hiroshi Watanabe , Toyoki Kitayama , Kouji Kise
IPC分类号： G21K500
CPC分类号： G21K5/02 , G21K1/06
摘要： In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 Å, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 Å and not more than 13 Å and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.
摘要翻译：在从具有4.5T的偏转磁场和0.7GeV的电子加速能量的辐射发生器（SR装置）发射的具有临时波长8.46的反射同步辐射的曝光方法中，通过具有倾斜入射角的铑镜将光通过20μm的铍窗，并通过在2μm的金刚石掩模基板上形成X射线吸收体图案而制备的X射线掩模，然后照射设置在基板上的抗蚀剂表面在光照下，抗蚀剂在至少为且不大于13的波长范围内具有主吸收波段，并且包含产生具有至少约0.51KeV且不大于2.6KeV的能量的俄歇电子的元件曝光后

4. 发明授权

US06735274B1 Clinical screening CT systems 失效
标题翻译：临床筛查CT系统
公开(公告)号：US06735274B1
公开(公告)日：2004-05-11
申请号：US10182786
申请日：2002-08-01
申请人： Opher Zahavi , Simha Levene
发明人： Opher Zahavi , Simha Levene
IPC分类号： G21K500
CPC分类号： A61B6/032 , A61B6/027 , A61B6/4028
摘要： A computerized tomographic imaging system (31) including a vertical movement arrangement (32, 35) for moving gantry of said system vertically while rotating about the object being imaged (44) to provide a helical scan.
摘要翻译：一种计算机断层成像系统（31），包括垂直移动装置（32,35），用于在围绕被成像的物体（44）旋转的同时垂直地移动所述系统的机架以提供螺旋扫描。

5. 发明授权

US06721390B2 Soft X-ray reduction projection exposure system, soft X-ray reduction projection exposure method and pattern formation method 有权
标题翻译：软X射线降低投影曝光系统，软X射线降低投影曝光方法和图案形成方法
公开(公告)号：US06721390B2
公开(公告)日：2004-04-13
申请号：US10164615
申请日：2002-06-10
申请人： Takahiro Matsuo , Masaru Sasago
发明人： Takahiro Matsuo , Masaru Sasago
IPC分类号： G21K500
CPC分类号： G03F7/70233 , G03F7/70883 , G03F7/70916
摘要： A soft X-ray reduction projection exposure system includes a light source for generating a soft X-ray beam of a wavelength of a 4 through 20 nm band; a reflecting mask on which a desired pattern is formed; an illumination optical system for irradiating the reflecting mask with the soft X-ray beam; a reduction projection optical system for imaging the pattern of the reflecting mask on a wafer; and a controlling section for controlling a partial pressure of a gas of a carbon compound to be 1.33×10−8 Pa or less in at least one of a first region where the illumination optical system is disposed, a second region where the reflecting mask is disposed and a third region where the reduction projection optical system is disposed.
摘要翻译：软X射线降低投影曝光系统包括用于产生波长为4至20nm带的软X射线束的光源; 形成所需图案的反射罩; 用于用所述软X射线束照射所述反射罩的照明光学系统; 用于在晶片上对反射掩模的图案进行成像的缩小投影光学系统; 以及控制部，其在设置有照明光学系统的第一区域中的至少一个中控制碳化合物的气体的分压为1.33×10 -8 Pa以下，第二区域，其中反射罩并且配置有缩小投影光学系统的第三区域。

6. 发明授权

US06549608B1 Semiconductor manufacturing apparatus and semiconductor device manufacturing method 失效
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US06549608B1
公开(公告)日：2003-04-15
申请号：US09538737
申请日：2000-03-30
申请人： Takayoshi Mamine , Nobuyuki Matsuzawa , Noriyuki Kishii
发明人： Takayoshi Mamine , Nobuyuki Matsuzawa , Noriyuki Kishii
IPC分类号： G21K500
CPC分类号： G03F7/70008
摘要： To provide a semiconductor manufacturing apparatus and a semiconductor device manufacturing method able to form a sufficiently precise pattern by ablation. A semiconductor manufacturing apparatus comprising a light source emitting light of a first wavelength on the surface of a wafer and a mask through which at least a part of the light of the first wavelength passes and removing a material of the part of the wafer exposed by the light of the first wavelength by vaporization, wherein the light source comprises an electron beam generating means for generating an electron beam and a light emitting means for emitting light of a second wavelength longer than the first wavelength and wherein the light of the first wavelength is inverse Compton scattered light obtained by collision of electrons in the electron beam with photons in the light of the second wavelength causing the energy of the electrons to be given to the photons and a semiconductor device manufacturing method using the apparatus.
摘要翻译： 1.一种半导体制造装置，其特征在于，具有通过烧蚀形成足够精细的图案的半导体制造装置和半导体装置的制造方法。1。一种半导体制造装置，其特征在于，包括在晶片表面上发射第一波长的光的光源和至少一个第一波长的光的一部分通过蒸发而通过并除去由第一波长的光曝光的晶片的部分的材料，其中光源包括用于产生电子束的电子束产生装置和发光装置用于发射比第一波长长的第二波长的光，其中第一波长的光是通过电子束中的电子与第二波长的光子碰撞而获得的康普顿散射光，导致电子的能量给予光子和使用该设备的半导体器件制造方法 s。

7. 发明授权

US06377651B1 Laser plasma source for extreme ultraviolet lithography using a water droplet target 有权
标题翻译：激光等离子体源，用于使用水滴靶的极紫外光刻
公开(公告)号：US06377651B1
公开(公告)日：2002-04-23
申请号：US09685291
申请日：2000-10-10
申请人： Martin Richardson , Guido Shriever
发明人： Martin Richardson , Guido Shriever
IPC分类号： G21K500
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , H05G2/008
摘要： A laser produced extreme ultraviolet (EUV) source based on a water droplet target has been implemented an auxiliary electrode system between the source and the first collector mirror. The auxiliary electrode system creates a repeller electric field, possibly a dc voltage imposed on the mirror that slows down and reverses the trajectories of ions from the source before they impact the collection mirror. The source modified according to the invention was evaluated with respect to the demands of EUV lithography and found to have much extended operational lifetimes. The spectral distribution of the generated radiation as well as the conversion efficiency into line radiation at 13 nm was determined. Long time measurements of the reflectivity of silicon/molybdenum multilayer mirrors for up to from 107 to 109 shots show the useful influence of the treatment of ions emitted from the source. Several methods of debris reduction were tested and discussed. Surface analysis of the treated multilayer mirrors of is presented. Long time measurements of the reflectivity of silicon/molybdenum multilayer mirrors for up to 109 shots show the advantage provided by this invention.
摘要翻译：基于水滴目标的激光产生极紫外（EUV）源已经实现了源和第一收集镜之间的辅助电极系统。辅助电极系统产生排斥电场，可能是施加在反射镜上的直流电压，其在撞击收集反射镜之前减慢并反转来自源的离子轨迹。根据本发明修改的源对EUV光刻的要求进行了评估，发现其寿命延长。确定所产生的辐射的光谱分布以及在13nm处的线辐射的转换效率。长时间测量硅/钼多层反射镜的反射率可达107至109次，显示了从源发射的离子的处理的有用影响。测试和讨论了几种减少碎屑的方法。提出了经处理的多层反射镜的表面分析。长达109次的硅/钼多层反射镜的反射率的长时间测量显示了本发明提供的优点。

8. 发明授权

US06285743B1 Method and apparatus for soft X-ray generation 有权
标题翻译：用于软X射线产生的方法和装置
公开(公告)号：US06285743B1
公开(公告)日：2001-09-04
申请号：US09395162
申请日：1999-09-14
申请人： Hiroyuki Kondo , Noriaki Kandaka
发明人： Hiroyuki Kondo , Noriaki Kandaka
IPC分类号： G21K500
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , G03F7/702 , G21K1/06 , H05G2/008
摘要： A soft X-ray source includes a mirror having a focal point, the mirror being one of parabolic and ellipsoidal, a nozzle delivering a target material to a plasma generation point substantially coincident with the focal point, and a laser source delivering a pulsed laser beam to the plasma generation point, wherein a plasma is generated at the plasma generation point upon irradiation by the pulsed laser beam, the plasma emitting soft X-rays that are formed into beams by the mirror, the beams being parallel if the mirror is parabolic and converging if the mirror is ellipsoidal.
摘要翻译：软X射线源包括具有焦点的反射镜，所述反射镜是抛物面和椭圆体之一，喷嘴将目标材料传送到基本上与焦点重合的等离子体产生点，以及激光源，其传送脉冲激光束到等离子体产生点，其中在通过脉冲激光束照射时在等离子体产生点处产生等离子体，等离子体发射通过反射镜形成光束的软X射线，如果反射镜是抛物线的，则束平行，如果镜子是椭圆的会聚。

9. 发明授权

US06212252B1 X-ray mask provided with an alignment mark and method of manufacturing the same 失效
标题翻译：具有对准标记的X射线掩模及其制造方法
公开(公告)号：US06212252B1
公开(公告)日：2001-04-03
申请号：US09177826
申请日：1998-10-23
申请人： Koji Kise , Hideki Yabe , Sunao Aya , Kaeko Kitamura , Kenji Marumoto , Shigeto Ami
发明人： Koji Kise , Hideki Yabe , Sunao Aya , Kaeko Kitamura , Kenji Marumoto , Shigeto Ami
IPC分类号： G21K500
CPC分类号： G03F1/22 , G03F1/42 , G03F9/7076
摘要： An X-ray mask which is provided with an alignment mark and a transfer circuit pattern having a high position accuracy can be manufactured through a simplified manufacturing process. A membrane allowing passage of X-rays is formed on a substrate. A X-ray absorber intercepting transmission of X-rays is formed on the membrane. The substrate includes a window exposing the membrane. The X-ray absorber includes a transfer circuit pattern and an alignment mark formed in a region not overlapping with the window in a plan view.
摘要翻译：可以通过简化的制造工艺制造具有对准标记的X射线掩模和具有高定位精度的传输电路图案。在基板上形成允许X射线通过的膜。在膜上形成截止X射线透射的X射线吸收器。衬底包括暴露膜的窗口。 X射线吸收体包括在平面图中形成在与窗不重叠的区域中的转印电路图案和对准标记。

10. 发明授权

US06834098B2 X-ray illumination optical system and X-ray reduction exposure apparatus 失效
标题翻译： X射线照射光学系统和X射线照射装置
公开(公告)号：US06834098B2
公开(公告)日：2004-12-21
申请号：US10119707
申请日：2002-04-11
申请人： Akira Miyake , Masami Tsukamoto
发明人： Akira Miyake , Masami Tsukamoto
IPC分类号： G21K500
CPC分类号： G03F7/70058 , G21K1/06
摘要： An X-ray illumination optical system for an X-ray reduction projection exposure apparatus includes an oblique projection reflection integrator having a reflection surface provided by a plurality of small cylindrical surfaces arrayed in parallel, to perform Koehler illumination of a region of arcuate shape. It enables X-ray illumination of only an arcuate region and reduces loss of light quantity and exposure time.
摘要翻译：用于X射线折射投影曝光装置的X射线照射光学系统包括：倾斜投影反射积分器，具有由平行排列的多个小圆柱面提供的反射面，以进行弓形区域的科勒照明。它能够仅对弓形区域进行X射线照射，并减少光量和曝光时间的损失。

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