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1. 发明授权

US6121638A Multi-layer structured nitride-based semiconductor devices 失效
标题翻译：多层结构氮化物基半导体器件
公开(公告)号：US6121638A
公开(公告)日：2000-09-19
申请号：US955747
申请日：1997-10-22
申请人： John Rennie , Genichi Hatakoshi , Shinji Saito
发明人： John Rennie , Genichi Hatakoshi , Shinji Saito
IPC分类号： H01L33/00 , H01L33/32 , H01S5/327 , H01S5/343 , A01L33/00 , A01L31/0328 , A01L31/0336 , A01L31/109
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S2301/173 , H01S5/3214 , H01S5/327 , H01S5/34333
摘要： At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.
摘要翻译：在基于GaN或ZnSe的多层半导体激光器和发光二极管中的n-n异质界面处，降低了导致工作电压增加的过大的电压降，从而延长了器件的使用寿命。在形成过大的电压降的n-n异质界面区域中设置单个或多个n型中间层。通过将n型异质界面的导带边缘处的能量值设定在n型导带边缘的能量值之间的中间值，可以减小在nn异质界面处产生的过大的电压降邻接中间层两侧的复合半导体。示出了包括在蓝宝石衬底上形成的中间层的GaN基MQW激光器的构造。描述了获得适合于上述目的的结晶度优异的中间层所需的中间层的晶格常数与邻接中间层两侧的化合物半导体的晶格常数之间的关系。

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