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1. 发明申请

US20180125152A1 MOVEMENT ASSISTANCE DEVICE 审中-公开
公开(公告)号：US20180125152A1
公开(公告)日：2018-05-10
申请号：US15567008
申请日：2016-04-05
申请人： APLINOV
发明人： Michel Bruel
IPC分类号： A43B7/14 , A43B7/32 , A43B7/16 , A43B5/04
CPC分类号： A43B7/147 , A43B5/0452 , A43B7/16 , A43B7/32 , A43B21/285 , A61H1/0266 , A61H3/00 , A61H3/04 , A61H2003/007 , A61H2201/1238 , A61H2201/164 , A61H2201/165 , A61H2201/5064 , A61H2201/5069 , A63B21/008 , A63B21/02 , A63B25/10 , A63C5/08 , A63C9/006 , A63C9/0807 , A63C9/082
摘要： A movement assistance device comprising a first element for rigidly connecting the device to one foot of a user and transmitting a thrust force to said foot; and a second element linked to the first element by link means and intended to be in contact with the ground; the device further comprises means for transmitting a force from an exogenous energy source, to the first element and/or to the second element, in order to separate them from each other.

2. 发明授权

US09528196B2 Method and device for fabricating a layer in semiconductor material 有权
标题翻译：用于制造半导体材料中的层的方法和装置
公开(公告)号：US09528196B2
公开(公告)日：2016-12-27
申请号：US14131295
申请日：2012-07-25
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： C30B11/14 , C30B19/10 , H01L21/02 , C30B19/00 , C30B29/06 , C30B29/08 , C30B19/06
CPC分类号： C30B19/10 , C30B19/00 , C30B19/062 , C30B29/06 , C30B29/08 , H01L21/02532 , H01L21/02625
摘要： The invention concerns a method for fabricating a substrate in semiconductor material characterized in that it comprises the steps of: starting from a donor substrate in a first semiconductor material at an initial temperature, contacting a surface of the donor substrate with a bath of a second semiconductor material held in the liquid state at a temperature higher than the initial temperature, the second semiconductor material being chosen so that its melting point is equal to or lower than the melting point of the first semiconductor material, solidifying the bath material on the surface to thicken the donor substrate with a solidified layer. The invention also concerns a device for implementing the method.
摘要翻译：本发明涉及一种用于制造半导体材料中的衬底的方法，其特征在于其包括以下步骤：从初始温度下的第一半导体材料中的施主衬底开始，将供体衬底的表面与第二半导体在高于初始温度的温度下保持在液态的材料，选择第二半导体材料使其熔点等于或低于第一半导体材料的熔点，使表面上的浴材固化成稠化施主衬底具有固化层。本发明还涉及一种用于实现该方法的装置。

3. 发明授权

US09190314B2 Process for treating a substrate using a luminous flux of determined wavelength, and corresponding substrate 有权
标题翻译：使用确定波长的光束处理衬底的工艺以及相应的衬底
公开(公告)号：US09190314B2
公开(公告)日：2015-11-17
申请号：US13818235
申请日：2011-09-05
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L21/762 , H01L29/06 , H01L21/268 , H01L21/302 , H01L21/78
CPC分类号： H01L29/36 , H01L21/268 , H01L21/302 , H01L21/76254 , H01L21/7806 , H01L29/0684
摘要： A substrate is treated by means of at least one pulse of a luminous flux of determined wavelength. The substrate comprises an embedded layer that absorbs the luminous flux independently of the temperature. The embedded layer is interleaved between a first treatment layer and a second treatment layer. The first treatment layer has a coefficient of absorption of luminous flux that is low at ambient temperature and rises as the temperature rises. The luminous flux may be applied in several places of a surface of the first layer to heat regions of the embedded layer and generate a propagating thermal front in the first layer opposite the heated regions of the embedded layer, which generate constraints within the second layer.
摘要翻译：借助于确定波长的光通量的至少一个脉冲来处理衬底。衬底包括独立于温度吸收光通量的嵌入层。嵌入层在第一处理层和第二处理层之间交错。第一处理层具有在环境温度下低的光通量吸收系数，随着温度升高而上升。光通量可以施加在第一层的表面的几个位置以加热嵌入层的区域，并且在与嵌入层的加热区域相对的第一层中产生传播的热前沿，其在第二层内产生约束。

4. 发明申请

US20150187638A1 PROCESS FOR TRANSFERRING A LAYER 有权
标题翻译：传输层的过程
公开(公告)号：US20150187638A1
公开(公告)日：2015-07-02
申请号：US14409361
申请日：2013-06-14
申请人： Soitec
发明人： Michel Bruel
IPC分类号： H01L21/762 , H01L21/265 , H01L21/268
CPC分类号： H01L21/76254 , H01L51/5024
摘要： This transfer process comprises the following steps: (a) providing a donor substrate and a support substrate; (b) forming an embrittlement region in the donor substrate; (c) forming what is called a bonding layer between the first part of the donor substrate and the support substrate; and assembling the donor substrate to the support substrate, and is noteworthy in that it comprises the following step: (e) exposing, in succession, portions of the embrittlement region to electromagnetic irradiations for an exposure time at a given power density, the exposure time being chosen depending on the thickness of the bonding layer so that the support substrate is thermally decoupled from the first part of the donor substrate, the exposure time being chosen depending on the power density in order to activate kinetics that weaken the embrittlement region.
摘要翻译：该转移方法包括以下步骤：（a）提供施主衬底和支撑衬底; （b）在供体衬底中形成脆化区; （c）在所述施主衬底的第一部分和所述支撑衬底之间形成所谓的结合层; 并且将供体衬底组装到支撑衬底上，并且值得注意的是它包括以下步骤：（e）连续地将脆化区域的部分暴露于电磁辐射以在给定功率密度下的曝光时间，曝光时间根据接合层的厚度选择，使得支撑衬底与施主衬底的第一部分热分离，根据功率密度选择曝光时间，以激活弱化脆化区域的动力学。

5. 发明授权

US08563399B2 Detachable substrate and processes for fabricating and detaching such a substrate 有权
标题翻译：可拆卸基板和用于制造和分离这种基板的工艺
公开(公告)号：US08563399B2
公开(公告)日：2013-10-22
申请号：US13217928
申请日：2011-08-25
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L29/66 , H01L29/76 , H01L21/76 , H01L21/26
CPC分类号： H01L21/76254
摘要： The invention relates to a detachable substrate for the electronics, optics or optoelectronics industry, that includes a detachable layer resting on a buried weakened region. This substrate is remarkable in that this buried weakened region consists of a semiconductor material that is denser in the liquid state than in the solid state and that contains in places precipitates of naturally volatile impurities. The invention also relates to a process for fabricating and detaching a detachable substrate.
摘要翻译：本发明涉及用于电子，光学或光电子工业的可拆卸衬底，其包括搁置在弱化区域上的可拆卸层。该衬底是显着的，因为该掩埋的弱化区域由在液态比在固态更致密并且在其中含有天然挥发性杂质的沉淀物的半导体材料组成。本发明还涉及一种用于制造和分离可拆卸基底的方法。

6. 发明申请

US20120199953A1 SEMICONDUCTOR STRUCTURE WITH SMOOTHED SURFACE AND PROCESS FOR OBTAINING SUCH A STRUCTURE 有权
标题翻译：具有平滑表面的半导体结构和获得这种结构的工艺
公开(公告)号：US20120199953A1
公开(公告)日：2012-08-09
申请号：US13349263
申请日：2012-01-12
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： H01L29/30 , H01L21/26
CPC分类号： H01L21/302 , H01L21/268 , H01L21/3247 , H01L21/76254
摘要： The present invention relates to a process for smoothing the surface of a semiconductor wafer by fusion. The process includes defining a reference length which dimensions wafer surface roughness that is to be reduced or removed, and scanning the surface with a fusion beam while adjusting parameters of the fusion beam so as to fuse, during the scanning of the surface, a local surface zone of the wafer whose length is greater than or equal to the reference length, with the scanning continued to smooth the entire surface of the wafer by eliminating surface roughnesses of period lower than the reference length. The present invention also relates to a semiconductor wafer having a surface layer made of a semiconducting material that is smoothed by the process and that does not exhibit any roughness of period lower than the reference length.
摘要翻译：本发明涉及通过熔化来平滑半导体晶片的表面的工艺。该过程包括定义参考长度，其缩小待削减或去除的晶片表面粗糙度，以及在调整熔合束的参数的同时用熔融光束扫描表面，从而在扫描表面期间熔化局部表面长度大于或等于参考长度的晶片的区域，扫描通过消除低于参考长度的周期的表面粗糙度，继续平滑晶片的整个表面。本发明还涉及一种半导体晶片，其具有由半导体材料制成的表面层，该表面层通过该工艺平滑，并且不显示比参考长度低的周期的粗糙度。

7. 发明申请

US20110293254A1 METHOD AND DEVICE FOR HEATING A LAYER OF A PLATE BY PRIMING AND LIGHT FLOW 有权
标题翻译：用于通过引导和光流加热板层的方法和装置
公开(公告)号：US20110293254A1
公开(公告)日：2011-12-01
申请号：US13127468
申请日：2009-10-27
申请人： Michel Bruel
发明人： Michel Bruel
IPC分类号： F27D11/12
CPC分类号： H01L21/268 , H01L21/221
摘要： The invention relates to a method and to a device for at least locally heating a plate including at least one layer (2) to be at least locally heated by at least one main, light flow pulse, and including at least one priming region (4) located deeply relative to the front surface of said layer to be heated, wherein the main flow (7) is capable of heating said layer to be heated (2) while the temperature of the latter is within a high temperature range (PHT), and a priming a secondary heating means (9) capable of heating said priming region from a temperature within a low temperature range (PBT) up to a temperature within said high temperature range (PHT).
摘要翻译：本发明涉及一种用于至少局部加热板的方法和装置，该板包括至少一层（2），至少由至少一个主流光脉冲局部加热，并且包括至少一个起泡区域（4）），其中所述主流（7）能够加热所述待加热层（2），同时所述主流体（7）的温度在高温范围（PHT）内，以及启动能够将所述起动区域从低温范围（PBT）内的温度加热到所述高温范围（PHT）内的温度的二次加热装置（9）。

8. 发明授权

US07498234B2 Method of producing a thin layer of semiconductor material 有权
标题翻译：制造半导体材料薄层的方法
公开(公告)号：US07498234B2
公开(公告)日：2009-03-03
申请号：US11327906
申请日：2006-01-09
申请人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
发明人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
IPC分类号： H01L21/762
CPC分类号： G03F7/70541 , H01L21/304 , H01L21/76251 , H01L21/76254 , H01L2221/68359 , H01L2221/68363 , Y10S438/977 , Y10T428/24612
摘要： The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
摘要翻译：本发明涉及一种生产半导体材料薄层的方法，包括：通过半导体晶片的平面（2）注入离子以产生微腔层的步骤，离子剂量在为了避免在平坦表面上形成水泡，为了实现微腔的聚结，热处理步骤可能是在薄层（6）中形成至少一个电子部件（5）的步骤，分离步骤将薄层（6）与晶片的其余部分（7）分开。

9. 发明申请

US20060115961A1 Method of producing a thin layer of semiconductor material 有权
标题翻译：制造半导体材料薄层的方法
公开(公告)号：US20060115961A1
公开(公告)日：2006-06-01
申请号：US11327906
申请日：2006-01-09
申请人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
发明人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
IPC分类号： H01L21/30
CPC分类号： G03F7/70541 , H01L21/304 , H01L21/76251 , H01L21/76254 , H01L2221/68359 , H01L2221/68363 , Y10S438/977 , Y10T428/24612
摘要： The invention relates to a method of producing a thin layer of semiconductor material including a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
摘要翻译：本发明涉及一种制造半导体材料薄层的方法，其包括通过半导体晶片的平面（2）注入离子以产生微腔层的步骤，离子剂量按照特定范围在特定范围内为了避免在平坦面上形成水泡，热处理步骤可以实现微腔的聚结，在薄层（6）中形成至少一个电子部件（5）的步骤，分离步骤来自晶片的其余部分（7）的薄层（6）。

10. 发明授权

US06809009B2 Method of producing a thin layer of semiconductor material 有权
标题翻译：制造半导体材料薄层的方法
公开(公告)号：US06809009B2
公开(公告)日：2004-10-26
申请号：US09777516
申请日：2001-02-06
申请人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
发明人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
IPC分类号： H01L21302
CPC分类号： G03F7/70541 , H01L21/304 , H01L21/76251 , H01L21/76254 , H01L2221/68359 , H01L2221/68363 , Y10S438/977 , Y10T428/24612
摘要： The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities a possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
摘要翻译：本发明涉及一种生产半导体材料薄层的方法，包括：通过半导体晶片的平面（2）注入离子以产生微腔层的步骤，离子剂量在为了避免在平坦表面上形成水疱，热处理步骤可以实现微腔的聚结，在薄层（6）中形成至少一个电子部件（5）的步骤，分离步骤将薄层（6）与晶片的其余部分（7）分开。

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