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1. 发明授权

US3471324A Epitaxial gallium arsenide 失效
标题翻译：外源性阿拉斯加
公开(公告)号：US3471324A
公开(公告)日：1969-10-07
申请号：US3471324D
申请日：1966-12-23
申请人： TEXAS INSTRUMENTS INC
发明人： WILSON ORAN W , CRONIN GEORGE R
IPC分类号： C22C1/00 , H01L21/00 , H01B19/04 , C01B27/02 , C01G15/00
CPC分类号： C22C1/007 , H01L21/00 , Y10S148/056 , Y10S148/057 , Y10S148/115 , Y10S148/13

2. 发明授权

US3073679A Production of single crystal boron phosphide 失效
标题翻译：生产单晶磷化硼
公开(公告)号：US3073679A
公开(公告)日：1963-01-15
申请号：US82336059
申请日：1959-06-29
申请人： MONSANTO CHEMICALS
发明人： STONE BOBBIE D , RUEHRWEIN ROBERT A
IPC分类号： C01B25/06 , C30B25/00
CPC分类号： C30B25/00 , C01B25/06 , C30B29/40 , Y10S148/113 , Y10S148/13

3. 发明授权

US3690847A Method of producing highly pure,particularly silicon free gallium arsenide 失效
标题翻译：生产高纯度，特殊无硅的阿拉伯胶的方法
公开(公告)号：US3690847A
公开(公告)日：1972-09-12
申请号：US3690847D
申请日：1970-08-18
申请人： SIEMENS AG
发明人： MERKEL HANS , LEIBENZEDER SIEGFRIED
IPC分类号： C30B11/00 , C30B11/06 , C01B27/00 , C01F15/00
CPC分类号： C30B11/065 , C30B11/00 , C30B29/42 , Y10S148/056 , Y10S148/065 , Y10S148/107 , Y10S148/13
摘要： METHOD OF PRODUCING HIGHLY PURE GALLIUM ARSENIDE. THE PRODUCT IS PARTICULARLY SILICON FREE. THE METHOD UTILIZES THE "TWO TEMPERATURE" TECHNIQUE. TWO GALLIUM BODIES ARE PROVIDED, THE FIRST IS AT A TEMPERATURE SLIGHTY ABOVE THE MELTING POINT OF GALLIUM ARESENIDE AND THE SECOND IS AT A TEMPERATURE OF 1250* TO 1350*C.

4. 发明授权

US3446653A Method for the production of silicon of high purity 失效
标题翻译：生产高纯度硅的方法
公开(公告)号：US3446653A
公开(公告)日：1969-05-27
申请号：US50031565
申请日：1965-10-21
申请人： SIEMENS AG
发明人： REUSCHEL KONRAD , SCHINK NORBERT
IPC分类号： C01B33/02 , C30B11/06 , C30B13/10 , C30B15/00 , H01L21/00 , B44D1/18 , C23C13/00
CPC分类号： C30B29/06 , C01B33/02 , C30B11/06 , C30B13/10 , C30B15/00 , H01L21/00 , Y10S148/016 , Y10S148/049 , Y10S148/06 , Y10S148/097 , Y10S148/107 , Y10S148/13

5. 发明授权

US3158571A Multi-stage filter system 失效
标题翻译：多级过滤系统
公开(公告)号：US3158571A
公开(公告)日：1964-11-24
申请号：US9888661
申请日：1961-03-28
申请人： SUPINGER WILLIAM M
发明人： SUPINGER WILLIAM M
IPC分类号： B01D27/00 , B01D29/00
CPC分类号： B01D27/00 , B01D27/02 , B01D27/08 , B01D29/15 , B01D29/54 , B01D29/58 , Y10S148/13

6. 发明授权

US3969163A Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases 失效
标题翻译：形成低成本半导体太阳能电池的气相沉积方法，包括重构反应气体
公开(公告)号：US3969163A
公开(公告)日：1976-07-13
申请号：US507329
申请日：1974-09-19
申请人： Gene Felix Wakefield
发明人： Gene Felix Wakefield
IPC分类号： C23C16/24 , C30B29/64 , H01L31/0352 , H01L31/068 , H01L31/18 , H01L21/205 , H01L21/84 , H01L31/00
CPC分类号： C23C16/24 , H01L31/035281 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S148/006 , Y10S148/12 , Y10S148/122 , Y10S148/13 , Y10S438/907
摘要： The disclosure relates to a method of upgrading metallurgical grade silicon to semiconductor grade for making low cost silicon devices and particularly solar cells. This is accomplished by passing conductive fibers such as graphite or the like which are compatible with the later processing steps through an area which is cooled below 700.degree. C and which contains silicon difluoride and a proper N-type dopant. At these temperatures, the silicon difluoride gas will break down into pure silicon which will deposit onto the fiber with the formation of silicon tetrafluoride gas which is then recycled into a further chamber. In the further chamber, the gaseous silicon tetrafluoride is mixed with the impure metallurgical grade silicon at temperatures above 700.degree. C to form the silicon difluoride gas which is then fed into the former chamber for deposition of pure silicon onto the continuously moving fibers of graphite or the like. A p-type layer can then be formed over the n-type layer in any standard manner, such as by then passing the coated fibers through a further reaction chamber wherein p-type dopant is diffused into the top surface of the n-type layer that has been formed. The dopants alternatively could be added in the gas stream of SiF.sub.4 or the p-layer formed by ion implantation. In this way, relatively inexpensive p-n junction devices are formed without the requirement of purifying, cutting and polishing a silicon slice in the standard manner.
摘要翻译：本公开涉及一种将冶金级硅升级为半导体级的方法，用于制造低成本硅器件，特别是太阳能电池。这通过将与后面的处理步骤相容的导电纤维如石墨等通过冷却至700℃以下并含有二氟化硅和适当的N型掺杂剂的区域来实现。在这些温度下，二氧化硅气体将分解成纯硅，其将沉积到纤维上，形成四氟化硅气体，然后再循环到另一个室中。在另外的室中，气态四氟化硅在高于700℃的温度下与不纯的冶金级硅混合以形成二氟化硅气体，然后将其加入到前一个室中，以将纯硅沉积到石墨的连续移动的纤维上类似。然后可以以任何标准方式在n型层上形成p型层，例如通过然后使涂覆的纤维通过另一个反应室，其中p型掺杂剂扩散到n型层的顶表面已经形成。可以将掺杂剂添加到SiF 4的气流或通过离子注入形成的p层中。以这种方式，形成相对便宜的p-n结器件，而不需要以标准方式净化，切割和抛光硅片。

7. 发明授权

US3380902A Method of varying the concentration of impurities in a semiconductor body 失效
标题翻译：改变半导体体内浓度浓度的方法
公开(公告)号：US3380902A
公开(公告)日：1968-04-30
申请号：US38669264
申请日：1964-07-31
申请人： PHILIPS CORP
发明人： WEISS KURT WALTER
IPC分类号： C30B31/02 , H01L21/00
CPC分类号： C30B31/02 , H01L21/00 , Y10S148/045 , Y10S148/049 , Y10S148/067 , Y10S148/13

8. 发明授权

US3020128A Method of preparing materials of high purity 失效
标题翻译：制备高纯度材料的方法
公开(公告)号：US3020128A
公开(公告)日：1962-02-06
申请号：US70649457
申请日：1957-12-31
申请人： TEXAS INSTRUMENTS INC
发明人： ADCOCK WILLIS A , SANGSTER RAYMOND C
IPC分类号： C01B25/06 , C01B33/02 , C01B33/08 , C01B35/02 , C22B5/00 , C22B5/16 , C23C16/08 , H01G9/04 , H01G9/048
CPC分类号： H01G9/048 , C01B25/003 , C01B25/01 , C01B25/06 , C01B33/02 , C01B33/04 , C01B33/08 , C01B33/107 , C01B35/023 , C22B5/00 , C22B5/16 , C23C16/08 , Y02P10/212 , Y10S148/13 , Y10S148/162

9. 发明授权

US4559217A Method for vacuum baking indium in-situ 失效
标题翻译：铟原位真空烘烤方法
公开(公告)号：US4559217A
公开(公告)日：1985-12-17
申请号：US547611
申请日：1983-11-01
申请人： Joseph A. Adamski
发明人： Joseph A. Adamski
IPC分类号： C01B25/08
CPC分类号： C01B25/087 , Y10S148/13
摘要： A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature in excess of 850.degree. C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.
摘要翻译：一种用于生产高纯度铟的方法，用于随后在多晶磷化铟的合成中用作反应成分，其包括在开放式石英安瓿中将真空中的原料铟加热至超过850℃的温度的步骤。密封安瓿瓶同时将所述真空保持在安瓿内部的步骤。

10. 发明授权

US4214920A Method for producing solar cell-grade silicon from rice hulls 失效
标题翻译：从稻壳生产太阳能电池级硅的方法
公开(公告)号：US4214920A
公开(公告)日：1980-07-29
申请号：US23300
申请日：1979-03-23
申请人： James A. Amick , John V. Milewski , Franklin J. Wright
发明人： James A. Amick , John V. Milewski , Franklin J. Wright
IPC分类号： C01B33/02 , C01B33/025 , H01L31/04 , H01L21/04 , C04B31/00
CPC分类号： C01B33/025 , Y02E10/546 , Y10S148/12 , Y10S148/122 , Y10S148/13 , Y10T428/253
摘要： The present invention relates to the production of high purity solar grade silicon from common rice hulls. A unique process for material purification and reduction includes leaching the rice hulls in acid followed by treatment with high purity water, coking the acid-cleaned hulls in a non-oxidizing ambient, compensating the carbon or silica content of the coked hulls to obtain a desired carbon to silica ratio and reducing the silica to produce high purity silicon.
摘要翻译：本发明涉及从普通稻壳生产高纯度太阳能级硅。用于材料净化和还原的独特方法包括将稻壳浸入酸中，然后用高纯度水处理，在非氧化环境中焦化酸洗净的船体，补偿焦化的船体的碳或二氧化硅含量，以获得所需的碳与二氧化硅的比例，还原二氧化硅以产生高纯度硅。

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