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1. 发明授权

US09466430B2 Variable capacitor and switch structures in single crystal piezoelectric MEMS devices using bimorphs 有权
标题翻译：使用双压电晶片的单晶压电MEMS器件中的可变电容器和开关结构
公开(公告)号：US09466430B2
公开(公告)日：2016-10-11
申请号：US14071025
申请日：2013-11-04
申请人： RF Micro Devices, Inc.
发明人： Kushal Bhattacharjee
IPC分类号： H01L41/09 , H03H9/125 , H03H9/15 , H01G5/18 , H03H9/02 , H03H9/46 , H03H9/24 , B81B3/00
CPC分类号： H01G5/18 , B81B3/0086 , B81B2201/018 , B81B2201/0271 , B81B2201/032 , H03H9/02275 , H03H9/02409 , H03H9/2405 , H03H9/2463 , H03H9/462 , H03H9/467 , H03H2009/241
摘要： A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.
摘要翻译：微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

2. 发明授权

US08106723B2 Resonant circuit, oscillation circuit, filter circuit, and electronic device 有权
标题翻译：谐振电路，振荡电路，滤波电路和电子器件
公开(公告)号：US08106723B2
公开(公告)日：2012-01-31
申请号：US12486662
申请日：2009-06-17
申请人： Toru Watanabe
发明人： Toru Watanabe
IPC分类号： H03H9/125 , H03H9/52 , H03H3/013
CPC分类号： H03H9/02409 , H03H9/2426 , H03H9/2463 , H03H9/465 , H03H9/467 , H03H2009/02511
摘要： A resonant circuit includes a substrate; a MEMS resonator including a fixed electrode and a movable electrode formed above the substrate and having a first terminal and a second terminal, the movable electrode having a movable portion opposing at least a part of the fixed electrode; a first input-output terminal connected to the first terminal connected to one of the fixed electrode and the movable electrode of the MEMS resonator; a second input-output terminal connected to the second terminal connected to an other one of the fixed electrode and the movable electrode of the MEMS resonator; a voltage applying unit supplying a potential to at least the first terminal to apply a bias voltage between the first and the second terminals; and a variable capacitance connected between the first terminal and the first input-output terminal to allow a capacitance value to be changed by a change in a potential difference between opposite ends of the variable capacitance.
摘要翻译：谐振电路包括基板; MEMS谐振器，包括固定电极和可动电极，其形成在所述基板上并具有第一端子和第二端子，所述可动电极具有与所述固定电极的至少一部分相对的可动部分; 连接到连接到MEMS谐振器的固定电极和可移动电极之一的第一端子的第一输入 - 输出端子; 连接到与MEMS谐振器的固定电极和可动电极中的另一个连接的第二端子的第二输入 - 输出端子; 电压施加单元，向至少所述第一端子提供电位，以在所述第一端子和所述第二端子之间施加偏置电压; 以及连接在第一端子和第一输入 - 输出端子之间的可变电容器，以通过可变电容的相对端之间的电位差的变化来改变电容值。

3. 发明申请

US20030184413A1 Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus 有权
公开(公告)号：US20030184413A1
公开(公告)日：2003-10-02
申请号：US10342029
申请日：2003-01-14
申请人： The Regents of the University of Michigan
发明人： Clark T.C. Nguyen
IPC分类号： H03H009/50 , H03H009/70
CPC分类号： H03H3/0078 , H01H59/0009 , H01H2059/0072 , H03H9/02409 , H03H9/24 , H03H9/2452 , H03H9/462 , H03H9/465 , H03H9/467 , H03H9/505 , H03H2009/02511 , H03H2009/02519 , H03H2009/02527
摘要： Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. For example, a method and apparatus for selecting at least one desired channel in an RF receiver subsystem is shown. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI to VLSI networks to implement signal processing functions with basically zero DC power consumption.

4. 发明申请

US20160191017A1 CO-INTEGRATED BULK ACOUSTIC WAVE RESONATORS 审中-公开
标题翻译：共同组合的大容量声波谐波器
公开(公告)号：US20160191017A1
公开(公告)日：2016-06-30
申请号：US14392126
申请日：2014-06-26
申请人： THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
发明人： Hassan EDREES , Ioannis KYMISSISS , Peter KINGET
IPC分类号： H03H11/04 , H01L27/20 , H03H9/54 , H03H9/17 , H03H9/205
CPC分类号： H03H11/04 , H01L27/20 , H01L41/081 , H03H9/0547 , H03H9/17 , H03H9/205 , H03H9/2426 , H03H9/465 , H03H9/467 , H03H9/525 , H03H9/545 , H03H9/605 , H03H2009/02188 , H03H2009/02496
摘要： An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.
摘要翻译：电路组件可以包括半导体集成电路，例如制造成包括CMOS器件的半导体集成电路。可以在半导体集成电路的表面上制造第一横向模式谐振器，诸如包括沉积的包含半导体材料的声能存储层，声耦合到沉积的声能存储层的沉积压电层，以及第一导电电耦合到沉积的压电层并电耦合到半导体集成电路。半导体集成电路可以包括一个或多个晶体管结构，例如在制造横向模式谐振器之前制造的。横模谐振器的制造可以包括指定的低温处理以避免中断晶体管结构的操作特性。

5. 发明申请

US20140125201A1 VARIABLE CAPACITOR AND SWITCH STRUCTURES IN SINGLE CRYSTAL PIEZOELECTRIC MEMS DEVICES USING BIMORPHS 有权
标题翻译：单晶压电MEMS器件中的可变电容和开关结构
公开(公告)号：US20140125201A1
公开(公告)日：2014-05-08
申请号：US14071025
申请日：2013-11-04
申请人： RF Micro Devices, Inc.
发明人： Kushal Bhattacharjee
IPC分类号： H01L41/09 , B81B7/02
CPC分类号： H01G5/18 , B81B3/0086 , B81B2201/018 , B81B2201/0271 , B81B2201/032 , H03H9/02275 , H03H9/02409 , H03H9/2405 , H03H9/2463 , H03H9/462 , H03H9/467 , H03H2009/241
摘要： A micro-electrical-mechanical systems (MEMS) device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with a first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the first surface, such that the second electrode is in contact with a second bimorph layer of the piezoelectric layer.
摘要翻译：微电气机械系统（MEMS）装置包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。第一电极可以设置在面向基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。第二电极可以设置在与第一表面相对的压电层的第二表面上，使得第二电极与压电层的第二双晶片层接触。

6. 发明授权

US06680660B2 Method and apparatus for selecting at least one desired channel utilizing a bank of vibrating micromechanical apparatus 有权
标题翻译：用于利用一组振动微机械装置选择至少一个期望通道的方法和装置
公开(公告)号：US06680660B2
公开(公告)日：2004-01-20
申请号：US10342029
申请日：2003-01-14
申请人： Clark T. C. Nguyen
发明人： Clark T. C. Nguyen
IPC分类号： H03H946
CPC分类号： H03H3/0078 , H01H59/0009 , H01H2059/0072 , H03H9/02409 , H03H9/24 , H03H9/2452 , H03H9/462 , H03H9/465 , H03H9/467 , H03H9/505 , H03H2009/02511 , H03H2009/02519 , H03H2009/02527
摘要： Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. For example, a method and apparatus for selecting at least one desired channel in an RF receiver subsystem is shown. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI to VLSI networks to implement signal processing functions with basically zero DC power consumption.
摘要翻译：提供了几种利用电路中的振动微机械谐振器来实现滤波，混频，频率参考和放大功能的基于MEMS的方法和架构。例如，示出了用于在RF接收机子系统中选择至少一个期望信道的方法和装置。使用这种架构的主要优点之一是通过为高选择性（即高Q）的交易功率节省了功耗。因此，本发明依赖于在SSI到VLSI网络中使用大量的微机械链路来实现基本上零直流功率消耗的信号处理功能。

7. 发明申请

US20020109494A1 Multiple mechanical resonator parametric device 有权
标题翻译：多机械谐振器参数化装置
公开(公告)号：US20020109494A1
公开(公告)日：2002-08-15
申请号：US10034594
申请日：2001-12-28
发明人： A. Olkhovets , D. W. Carr , Harold G. Craighead , J. M. Parpia
IPC分类号： G01R023/00
CPC分类号： H03H9/525 , H03H9/467
摘要： A resonator device utilizes two small mechanical resonators that are electrostatically coupled. A first resonator receives an input signal near its resonant frequency, and the input signal and a second signal are summed and provided to a second resonator. The resonant frequency of the second resonator is approximately equal to the second signal frequency. A width of response of the amplifier is tuned by varying the pump voltage. Resonant frequencies of corresponding individual oscillators are tuned by adjusting bias voltages.
摘要翻译：谐振器装置利用两个静电耦合的小型机械谐振器。第一谐振器在其谐振频率附近接收输入信号，并将输入信号和第二信号相加并提供给第二谐振器。第二谐振器的谐振频率近似等于第二信号频率。通过改变泵浦电压来调节放大器的响应宽度。通过调整偏置电压来调谐相应单独振荡器的谐振频率。

8. 发明授权

US5955932A Q-controlled microresonators and tunable electric filters using such resonators 失效
标题翻译：使用这种谐振器的Q控制的微谐振器和可调电滤波器
公开(公告)号：US5955932A
公开(公告)日：1999-09-21
申请号：US473342
申请日：1995-06-06
申请人： Clark Tu-Cuong Nguyen , Roger T. Howe
发明人： Clark Tu-Cuong Nguyen , Roger T. Howe
IPC分类号： H01G5/14 , H03H9/02 , H03H9/46 , H03H9/205
CPC分类号： H03H9/02377 , G01R33/0286 , H01G5/14 , H03H9/02393 , H03H9/02425 , H03H9/467 , H03H2009/02496 , H03H9/0023
摘要： A Q-controlled microresonator and devices including such resonators.
摘要翻译： Q控制的微谐振器和包括这种谐振器的器件。

9. 发明申请

US20170291811A1 MULTI-FREQUENCY EXCITATION 审中-公开
公开(公告)号：US20170291811A1
公开(公告)日：2017-10-12
申请号：US15508130
申请日：2015-09-04
申请人： KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
发明人： Mohammad YOUNIS
IPC分类号： B81B7/00 , G01P15/125 , G02B26/08
CPC分类号： B81B7/008 , B81B2201/0235 , B81B2201/0271 , B81B2201/042 , G01P15/125 , G01P2015/0862 , G02B26/0833 , H03H3/0076 , H03H9/02259 , H03H9/02393 , H03H9/467 , H03H9/525
摘要： Embodiments of multi-frequency excitation are described. In various embodiments, a natural frequency of a device may be determined. In turn, a first voltage amplitude and first fixed frequency of a first source of excitation can be selected for the device based on the natural frequency. Additionally, a second voltage amplitude of a second source of excitation can be selected for the device, and the first and second sources of excitation can be applied to the device. After applying the first and second sources of excitation, a frequency of the second source of excitation can be swept. Using the methods of multi-frequency excitation described herein, new operating frequencies, operating frequency ranges, resonance frequencies, resonance frequency ranges, and/or resonance responses can be achieved for devices and systems.

10. 发明授权

US09331264B1 Microelectromechanical resonators having degenerately-doped and/or eutectic alloy resonator bodies therein 有权
标题翻译：在其中具有简并掺杂和/或共晶合金谐振器体的微机电谐振器
公开(公告)号：US09331264B1
公开(公告)日：2016-05-03
申请号：US13712533
申请日：2012-12-12
申请人： Georgia Tech Research Corporation
发明人： Farrokh Ayazi , Ashwin Samarao
IPC分类号： H01L21/22 , H01L41/113 , H01L29/84
CPC分类号： H01L41/113 , H01L29/84 , H03H3/0077 , H03H9/2463 , H03H9/467 , H03H2003/0414 , H03H2007/006
摘要： A microelectromechanical resonator includes a resonator body having a semiconductor region therein that may be degenerately doped with boron. This high level of doping facilitates the formation of a eutectic alloy within the resonator body in response to resistive heating. The formation of a lattice-strained eutectic alloy within the resonator body supports reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range.
摘要翻译：微机电谐振器包括谐振器体，其中具有可以用硼简并掺杂的半导体区域。这种高水平的掺杂有助于响应于电阻加热在共振器体内形成共晶合金。在谐振器体内形成晶格应变共晶合金支持在较大温度范围内降低谐振器的频率温度系数（TCF）。

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