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    • 3. 发明授权
    • MEMS pressure sensor
    • MEMS压力传感器
    • US08516905B2
    • 2013-08-27
    • US13583379
    • 2012-04-02
    • Kunihiko NakamuraTomohiro IwasakiTakehiko YamakawaKeiji Onishi
    • Kunihiko NakamuraTomohiro IwasakiTakehiko YamakawaKeiji Onishi
    • G01L1/10G01B7/16
    • G01L9/0019H03H9/2463H03H2009/02488
    • A MEMS resonator 100 including a substrate 112; an vibrator 102 including an mechanically vibrating part and a fixed part; at least one electrode 108 that is close to the vibrator and has an area overlapping with the vibrator across a gap 109 in a direction perpendicular to a surface of the substrate; and a pressure transferring mechanism to displace the at least one electrode according to an externally applied pressure so as to change the gap; is connected to a detection circuit that detects transmission characteristics of an AC signal from an input electrode to an output electrode, the input and output electrodes being one and the other of the vibrator 102 and the at least one electrode 108, and the pressure is detected based on the transmission characteristics of the AC signal that is detected by the detection circuit.
    • 包括基板112的MEMS谐振器100; 包括机械振动部分和固定部分的振动器102; 至少一个电极108,其靠近振动器并且具有与垂直于衬底的表面的方向上的跨越间隙109的振动器重叠的区域; 以及压力传递机构,用于根据外部施加的压力移动所述至少一个电极,以便改变所述间隙; 连接到检测电路,其检测从输入电极到输出电极的AC信号的传输特性,输入和输出电极是振动器102和至少一个电极108中的一个和另一个,并且检测到压力 基于由检测电路检测到的AC信号的传输特性。
    • 5. 发明申请
    • MEMS RESONATORS
    • MEMS谐振器
    • US20100283353A1
    • 2010-11-11
    • US12601038
    • 2008-05-28
    • CASPER VAN DER AVOORT
    • CASPER VAN DER AVOORT
    • H03H9/24
    • H03H9/2452H03H9/02244H03H9/02259H03H2009/02488H03H2009/02496
    • A MEMS piezoresistive resonator (8, 78) is driven at a higher order eigenmode (32) than the fundamental eigenmode (31). The route of flow of a sense current (22) is arranged in relation to a characteristic of the higher order eigenmode (32), for example by being at a point of maximum displacement (50) or at a point of maximum rate of change with respect to distance (x) of displacement of the higher order eigenmode (32). The route of flow of the sense current (22) may be arranged by fabricating the MEMS piezoresistive resonator (8, 78) with a trench (15) formed between two beams (11, 12) of the MEMS piezoresistive resonator (8, 78), the end of the trench being located at the above mentioned position.
    • MEMS压阻谐振器(8,78)以比基本本征模式(31)高的本征模式(32)被驱动。 感测电流(22)的流动路径相对于高阶本征模式(32)的特性被布置,例如通过位于最大位移(50)的点或最大变化速度的点处, 相对于高阶本征模式(32)的位移距离(x)。 感测电流(22)的流动路径可以通过用形成在MEMS压阻谐振器(8,78)的两个光束(11,12)之间的沟槽(15)制造MEMS压阻谐振器(8,78)来布置, 沟槽的端部位于上述位置。