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1. 发明授权

US08854134B2 Chip card 有权
标题翻译：芯片卡
公开(公告)号：US08854134B2
公开(公告)日：2014-10-07
申请号：US13598701
申请日：2012-08-30
申请人： Richard Sbuell
发明人： Richard Sbuell
IPC分类号： H03F3/45
CPC分类号： H03F3/3044 , H03F3/45475 , H03F2200/411 , H03F2203/45631 , H03F2203/45648 , H03F2203/45702
摘要： According to an embodiment, a chip card is provided comprising a signal source configured to generate a signal to be transmitted via radio, a p-channel field effect transistor and being coupled with its source terminal to an upper supply potential and with its drain terminal to a common node; an n-channel field effect transistor and being coupled with its drain terminal to the common node and with its source terminal to a lower supply potential; an operational amplifier having a positive input terminal, a negative input terminal and an output terminal, wherein the positive input terminal is coupled to the common node, the negative input terminal is coupled to the signal source and the output terminal is coupled to the gate terminal of the p-channel field effect transistor and to the gate terminal of the n-channel field effect transistor; and an antenna coupled to the common node.
摘要翻译：根据实施例，提供了一种芯片卡，其包括被配置为产生要经由无线电发送的信号的信号源，p沟道场效应晶体管并且与其源极端子耦合到较高的电源电位，并且其漏极端子一个公共节点 n沟道场效应晶体管，并与其漏极端子耦合到公共节点，并将其源极端子耦合到较低的电源电位; 具有正输入端子，负输入端子和输出端子的运算放大器，其中所述正输入端子耦合到所述公共节点，所述负输入端子耦合到所述信号源，并且所述输出端子耦合到所述栅极端子的p沟道场效应晶体管和n沟道场效应晶体管的栅极端子; 以及耦合到公共节点的天线。

2. 发明授权

US4021751A Field effect transistor amplifier 失效
标题翻译：场效应晶体管放大器
公开(公告)号：US4021751A
公开(公告)日：1977-05-03
申请号：US628147
申请日：1975-11-03
申请人： Tadao Suzuki
发明人： Tadao Suzuki
IPC分类号： H03F1/30 , H01L29/00 , H03F3/185 , H03F3/20 , H03F3/26 , H03F3/30 , H03F3/45 , H03F3/16
CPC分类号： H03F3/45408 , H01L29/00 , H03F3/1855 , H03F3/26 , H03F3/3044 , H03F3/45466 , H03F2200/516 , H03F2203/45498 , H03F2203/45702
摘要： A field effect transistor amplifier has a signal input circuit which preferably includes an A-class amplifier, a driving stage having first and second FETs driven in the same phase relation by an input signal applied to their gate electrodes from the signal input circuit, a first voltage source connected to the source electrodes of the first and second FETs, a resistor connected between the drain electrodes of the first and second FETs, an output stage having third and fourth FETs with the gate electrodes of the latter being connected to opposite ends of the resistor so that the voltage across the latter is applied as the DC bias voltage for the FETs of the output stage, a second voltage source connected to the drain electrodes of the third and fourth FETs, and an output terminal connected to the source electrodes of the third and fourth electrodes which are connected to each other. At least the FETs of the output stage are triode characteristic FETs and, if the gain of the A-class amplifier in the signal input circuit is insufficient, the FETs of the driving stage are also triode characteristic FETs.
摘要翻译：场效应晶体管放大器具有信号输入电路，其优选地包括A级放大器，驱动级具有通过从信号输入电路施加到其栅电极的输入信号以相同的相位关系驱动的第一和第二FET，第一连接到第一和第二FET的源电极的电压源，连接在第一和第二FET的漏电极之间的电阻器，具有第三和第四FET的输出级，其后面的栅电极连接到电阻器，使得后者的电压作为输出级的FET的直流偏压施加，连接到第三和第四FET的漏电极的第二电压源和连接到第三和第四FET的源电极的输出端子第三和第四电极彼此连接。至少输出级的FET是三极管特性FET，如果信号输入电路中A级放大器的增益不足，则驱动级的FET也是三极管特性FET。

3. 发明授权

US4015212A Amplifier with FET having gate leakage current limitation 失效
标题翻译：具有栅极泄漏电流限制的FET的放大器
公开(公告)号：US4015212A
公开(公告)日：1977-03-29
申请号：US626370
申请日：1975-10-28
申请人： Toshihiko Miyata
发明人： Toshihiko Miyata
IPC分类号： H03F3/20 , H03F3/30 , H03F3/16
CPC分类号： H03F3/3044
摘要： An amplifier having at least a drive stage and an output stage, the output stage comprised of an FET for applying an amplified signal to a load. The drive stage includes a transistor device whose output is direct coupled to the gate electrode of the FET, the transistor device being supplied with an input signal to be amplified. A constant current source is coupled to the output of the transistor device, and thus to the gate electrode of the FET, and provides a current of predetermined magnitude to thus limit the gate leakage current during periods that the FET is cut off.
摘要翻译：具有至少驱动级和输出级的放大器，所述输出级由用于将放大信号施加到负载的FET构成。驱动级包括其输出直接耦合到FET的栅电极的晶体管器件，晶体管器件被提供有待放大的输入信号。恒流源耦合到晶体管器件的输出，并因此连接到FET的栅电极，并且提供预定大小的电流，从而在FET截止的周期期间限制栅极漏电流。

4. 发明授权

US3987369A Direct-coupled FET amplifier 失效
标题翻译：直接耦合FET放大器
公开(公告)号：US3987369A
公开(公告)日：1976-10-19
申请号：US579082
申请日：1975-05-20
申请人： Kenji Yokoyama
发明人： Kenji Yokoyama
IPC分类号： H03F3/30 , H03F3/16
CPC分类号： H03F3/3044
摘要： A direct-coupled full stage cascaded amplifier comprising an output stage, a drive stage and a predrive stage. The output stage is composed of an SEPP (single-ended push-pull) circuit of a plurality of FET's having a certain conductivity type channel. The drive stage is composed of a differential amplifier circuit of a plurality of FET's having a channel of a conductivity type same as that of the FET's in the output stage. The pre-drive stage is composed of another differential amplifier circuit of a plurality of FET's having a channel of a conductivity type opposite to that of the FET's in the output stage. The source electrodes of the FET's in the respective differential amplifier circuits are connected via constant current circuits, respectively, to voltage supply lines having opposite polarities.
摘要翻译：一种直接耦合全级级联放大器，包括输出级，驱动级和预驱动级。输出级由具有一定导电类型通道的多个FET的SEPP（单端推挽）电路组成。驱动级由多个FET的差分放大电路组成，其具有与输出级中的FET的导通类型相同的沟道的沟道。预驱动级由在输出级具有与FET的导通类型相反的通道的多个FET的另一个差分放大器电路组成。各差分放大电路中的FET的源极分别通过恒流电路连接到具有相反极性的电压供给线。

5. 发明申请

US20110121903A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20110121903A1
公开(公告)日：2011-05-26
申请号：US12823489
申请日：2010-06-25
申请人： Young Jean SONG , Shinichi IIZUKA , Youn Suk KIM , Hyo Kun BAE , Sang Hee KIM , Jun Goo WON , Joong Jin NAM , Ki Joong KIM , Jae Hyouck CHOI
发明人： Young Jean SONG , Shinichi IIZUKA , Youn Suk KIM , Hyo Kun BAE , Sang Hee KIM , Jun Goo WON , Joong Jin NAM , Ki Joong KIM , Jae Hyouck CHOI
IPC分类号： H03F3/16 , H03F1/00
CPC分类号： H03F3/245 , H03F1/0205 , H03F3/193 , H03F3/3022 , H03F3/3044 , H03F3/45179 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03F2203/45481 , H03F2203/45621
摘要： There is provided a power amplifier that can increase power efficiency by preventing power consumption caused by DC components from an RF input signal. A power amplifier according to an aspect of the invention may include: an inverter amplification section amplifying an input signal according to an inverter method to thereby remove DC components from the input signal; an impedance matching section matching an impedance of a transmission path of the input signal amplified by the inverter amplification section; and an amplification section amplifying an impedance-matched signal from the impedance matching section according to a gain set beforehand.
摘要翻译：提供了一种功率放大器，其可以通过防止来自RF输入信号的DC分量引起的功率消耗来提高功率效率。根据本发明的一个方面的功率放大器可以包括：逆变器放大部分，根据逆变器方法放大输入信号，从而从输入信号中去除DC分量; 阻抗匹配部匹配由所述反相放大部放大的输入信号的传输路径的阻抗; 以及放大部，根据预先设定的增益放大来自阻抗匹配部的阻抗匹配信号。

6. 发明授权

US5621357A Class AB output amplifier stage 失效
标题翻译： AB类输出放大器级
公开(公告)号：US5621357A
公开(公告)日：1997-04-15
申请号：US448259
申请日：1995-05-23
申请人： Edoardo Botti , Giorgio Chiozzi
发明人： Edoardo Botti , Giorgio Chiozzi
IPC分类号： H03F1/34 , H03F1/32 , H03F3/30 , H03F3/45 , H23F3/45
CPC分类号： H03F1/3217 , H03F3/3044 , H03F3/4521
摘要： An AB class stage is described which comprises two complementary MOSFET final transistors connected in a push-pull manner between two supply terminals. In order to attain high linearity, low switching distortion, a high ratio between the maximum output current and the rest current, independence of the rest current from the temperature and manufacturing variables and a circuit simplicity, the circuits determining the rest current and those which provide current to the load are substantially independent of one another. More particularly, two transconductance amplifiers are provided which control the final transistors and are dimensioned so as to have zero output current in rest conditions, two voltage generators which determine the rest current and two resistors being connected between the gate electrodes of the final transistors and the supply terminals.
摘要翻译：描述了AB级级，其包括以两个电源端子之间的推挽方式连接的两个互补MOSFET最终晶体管。为了获得高线性度，低开关失真，最大输出电流与静止电流之间的高比率，剩余电流与温度和制造变量的独立性以及电路简单性，确定静态电流的电路和提供电流到负载基本上彼此独立。更具体地，提供了两个跨导放大器，其控制最终的晶体管并将其尺寸设定为在静止条件下具有零输出电流，确定静止电流的两个电压发生器和连接在最终晶体管的栅电极之间的两个电阻器和供应端子。

7. 发明授权

US5376898A Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US5376898A
公开(公告)日：1994-12-27
申请号：US38782
申请日：1993-03-29
申请人： Hiroyuki Tanaka , Yasushi Hatta , Tatsuya Kouketsu , Yasushi Takahashi , Kyosuke Ishikawa , Keiichi Kitamura
发明人： Hiroyuki Tanaka , Yasushi Hatta , Tatsuya Kouketsu , Yasushi Takahashi , Kyosuke Ishikawa , Keiichi Kitamura
IPC分类号： H03K19/0952 , H03F3/30 , H03F3/50 , H03F3/45
CPC分类号： H03F3/3044 , H03F3/505
摘要： A semiconductor integrated circuit device of a type wherein loads for source follower amplifiers FETs whose gates receive an amplified signal produced from a differential amplifier section and whose each source generates an output signal, comprise first load FETs whose each gate area is small and second load FETs which are respectively series-connected with the first load FETs, whose each gate length is relatively long and each of which has small drain conductance.
摘要翻译：一种半导体集成电路器件，其类型为源极跟随器放大器的FET，其栅极接收从差分放大器部分产生的放大信号并且其每个源产生输出信号，其包括其栅极面积小的第一负载FET和第二负载FET 它们分别与第一负载FET串联连接，其每个栅极长度相对较长，并且每个具有小的漏极电导。

8. 发明授权

US4021747A Signal amplifier circuit using a pair of complementary junction field effect transistors 失效
标题翻译：信号放大器电路采用一对互补结场效应晶体管
公开(公告)号：US4021747A
公开(公告)日：1977-05-03
申请号：US617571
申请日：1975-09-29
申请人： Shigeru Todokoro
发明人： Shigeru Todokoro
IPC分类号： H03F1/34 , H03F3/16 , H03F3/20 , H03F3/213 , H03F3/30 , H03F3/34 , H03F3/345 , H03F3/347 , H03F3/42 , H03F3/185
CPC分类号： H03F1/226 , H03F1/34 , H03F3/165 , H03F3/30 , H03F3/3044 , H03F3/345 , H03F3/426
摘要： A signal amplifier circuit includes at least one pair of complementary junction field effect transistors serially connected in a source-to-source relationship between first and second power supply source terminals. In order to apply a reverse bias between the gate and source in each of the paired transistors, the gate bias potential of one of the paired transistors can be selected between a potential on the first power supply terminal and a potential of the commonly connected sources of the transistor pair, and the gate bias potential of the other transistor be selected between a potential at the second power supply terminal and the potential of the commonly connected sources of the transistor pair. According to this invention, direct coupling can be easily effected between amplifier stages using a common power supply source.
摘要翻译：信号放大器电路包括以第一和第二电源端子之间的源 - 源关系串联连接的至少一对互补结场效应晶体管。为了在每个成对晶体管中的栅极和源极之间施加反向偏置，可以在第一电源端子上的电位和共同连接的源极的电位之间选择成对晶体管之一的栅极偏置电位晶体管对，并且另一个晶体管的栅极偏置电位在第二电源端子处的电位和晶体管对的共同连接的源极的电位之间选择。根据本发明，可以在使用公共电源的放大器级之间容易地实现直接耦合。

9. 发明授权

US4021746A Transistor amplifier having field effect transistors with stabilized drain bias current 失效
标题翻译：晶体管放大器具有稳定的漏极偏置电流的场效应晶体管
公开(公告)号：US4021746A
公开(公告)日：1977-05-03
申请号：US630330
申请日：1975-11-10
申请人： Tadao Suzuki
发明人： Tadao Suzuki
IPC分类号： H03F1/30 , H03F3/20 , H03F3/30 , H03F3/16
CPC分类号： H03F1/306 , H03F3/3044
摘要： A transistor amplifier is comprised of a first differential amplifier for receiving an input signal and a second differential amplifier coupled to the output of the first differential amplifier. An output stage is coupled to the second differential amplifier and is comprised of a pair of complementary field effect transistors connected in push-pull configuration. Each of the field effect transistors has triode-type dynamic characteristics and is adapted to receive both a bias voltage and an amplified signal from the output of the second differential amplifier. Changes in the operating voltage supplied to the field effect transistors are injected into one of the differential amplifiers so as to effect a corresponding change in the bias voltage which is applied to the field effect transistors. This bias voltage change compensates for changes in the operating voltage so as to stabilize the field effect transistor drain currents at a constant value notwithstanding these operating voltage changes.
摘要翻译：晶体管放大器包括用于接收输入信号的第一差分放大器和耦合到第一差分放大器的输出的第二差分放大器。输出级耦合到第二差分放大器，并且包括以推挽配置连接的一对互补场效应晶体管。每个场效应晶体管具有三极管型动态特性，并且适于从第二差分放大器的输出接收偏置电压和放大信号。提供给场效应晶体管的工作电压的变化被注入到一个差分放大器中，以实现施加到场效应晶体管的偏置电压的相应变化。该偏置电压变化补偿了工作电压的变化，以便即使这些工作电压变化，场效应晶体管漏极电流稳定在恒定值。

10. 发明授权

US3974455A Transistor amplifier 失效
标题翻译：晶体管放大器
公开(公告)号：US3974455A
公开(公告)日：1976-08-10
申请号：US577678
申请日：1975-05-15
申请人： Kazuhiko Kamimura , Tadao Yoshida
发明人： Kazuhiko Kamimura , Tadao Yoshida
IPC分类号： H03F3/21 , H03F1/30 , H03F3/20 , H03F3/30 , H03F3/16
CPC分类号： H03F1/303 , H03F3/3044
摘要： A transistor amplifier comprising a bipolar transistor having an input electrode and a pair of output electrodes, one of the output electrodes being coupled to the gate electrode of a field effect transistor, the field effect transistor having triode-type dynamic characteristics. Respective sources of operating potential are coupled to the bipolar and field effect transistors. To stabilize the DC bias current flowing through the field effect transistor in the event of fluctuations of the operating potential supplied thereto, a portion of such fluctuations is injected into the other output electrode of the bipolar transistor. The field effect transistor is adapted to drive a load impedance.
摘要翻译：一种晶体管放大器，包括具有输入电极和一对输出电极的双极晶体管，所述输出电极中的一个耦合到场效应晶体管的栅电极，所述场效应晶体管具有三极管型动态特性。相关的工作电位源耦合到双极和场效应晶体管。为了稳定流过场效应晶体管的直流偏置电流，在提供给它的工作电位发生波动的情况下，这种波动的一部分被注入双极晶体管的另一个输出电极。场效应晶体管适于驱动负载阻抗。

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