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1. 发明申请

US20080258820A1 ACTIVE CIRCUIT HAVING IMPROVED LINEARITY USING MULITIPLE GATED TRANSISTOR 失效
标题翻译：使用多极化晶体管的有源电路具有改善的线性
公开(公告)号：US20080258820A1
公开(公告)日：2008-10-23
申请号：US12146308
申请日：2008-06-25
申请人： Tae Wook KIM , Bonkee KIM , Kwyro LEE
发明人： Tae Wook KIM , Bonkee KIM , Kwyro LEE
IPC分类号： H03F3/68
CPC分类号： H03F3/505 , H03F1/3205 , H03F1/3211 , H03F3/345 , H03F2200/453 , H03F2203/5042
摘要： The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.
摘要翻译：本发明涉及有源电路的改进的线性度，更具体地，涉及使用主电路单元和辅助电路单元具有改进的线性度的有源电路。根据本发明，公共门电路包括主电路单元，该主电路单元由具有输出信号作为输出信号输出的漏极端子的公共门电路组成，具有公共门电路的辅助电路单元以辅助主电路单元的线性度，分别用于偏置主电路单元和辅助电路单元的偏置单元和连接到主电路单元和辅助电路单元的输出级的负载级，其中主电路单元和辅助电路单元的输出级电路单元和辅助电路单元彼此耦合。

2. 发明申请

US20060049876A1 Active circuit having improved linearity using multiple gated transistor 失效
公开(公告)号：US20060049876A1
公开(公告)日：2006-03-09
申请号：US11178481
申请日：2005-07-12
申请人： Tae Kim , Bonkee Kim , Kwyro Lee
发明人： Tae Kim , Bonkee Kim , Kwyro Lee
IPC分类号： H03F3/68
CPC分类号： H03F3/505 , H03F1/3205 , H03F1/3211 , H03F3/345 , H03F2200/453 , H03F2203/5042
摘要： The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.

3. 发明授权

US07586375B2 Active circuit having improved linearity using multiple gated transistor 失效
标题翻译：使用多门控晶体管的有源电路具有改善的线性度
公开(公告)号：US07586375B2
公开(公告)日：2009-09-08
申请号：US12146308
申请日：2008-06-25
申请人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
发明人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
IPC分类号： H03F3/68
CPC分类号： H03F3/505 , H03F1/3205 , H03F1/3211 , H03F3/345 , H03F2200/453 , H03F2203/5042
摘要： The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.
摘要翻译：本发明涉及有源电路的改进的线性度，更具体地，涉及使用主电路单元和辅助电路单元具有改进的线性度的有源电路。根据本发明，公共门电路包括主电路单元，该主电路单元由具有输出信号作为输出信号输出的漏极端子的公共门电路组成，具有公共门电路的辅助电路单元以辅助主电路单元的线性度，分别用于偏置主电路单元和辅助电路单元的偏置单元和连接到主电路单元和辅助电路单元的输出级的负载级，其中主电路单元和辅助电路单元的输出级电路单元和辅助电路单元彼此耦合。

4. 发明授权

US07525386B2 Active circuit having improved linearity using multiple gated transistor 有权
公开(公告)号：US07525386B2
公开(公告)日：2009-04-28
申请号：US12146299
申请日：2008-06-25
申请人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
发明人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
IPC分类号： H03F3/68
CPC分类号： H03F3/505 , H03F1/3205 , H03F1/3211 , H03F3/345 , H03F2200/453 , H03F2203/5042
摘要： The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.

5. 发明授权

US07439805B1 Enhancement-depletion Darlington device 有权
标题翻译：增强耗尽达林顿装置
公开(公告)号：US07439805B1
公开(公告)日：2008-10-21
申请号：US11422928
申请日：2006-06-08
申请人： Kevin W. Kobayashi
发明人： Kevin W. Kobayashi
IPC分类号： H03F3/16
CPC分类号： H03F3/211 , H01L28/10 , H03F1/34 , H03F1/342 , H03F3/505 , H03F2200/456 , H03F2200/492 , H03F2200/54 , H03F2200/93 , H03F2203/5042
摘要： An apparatus comprising a Darlington transistor pair comprising a first transistor and a second transistor. The first transistor may have a gate configured to receive an input signal. The second transistor may have a gate coupled to a source of the first transistor. The Darlington transistor pair may be configured to generate an output signal at a drain of the first transistor and a drain of the second transistor in response to the input signal. The first transistor may be implemented as an enhancement mode device and the second transistor may be implemented as a depletion mode device.
摘要翻译：一种包括具有第一晶体管和第二晶体管的达林顿晶体管对的装置。第一晶体管可以具有被配置为接收输入信号的栅极。第二晶体管可以具有耦合到第一晶体管的源极的栅极。达林顿晶体管对可以被配置为响应于输入信号在第一晶体管的漏极和第二晶体管的漏极处产生输出信号。第一晶体管可以被实现为增强模式器件，并且第二晶体管可以被实现为耗尽型器件。

6. 发明申请

US20130093516A1 LOW OUTPUT IMPEDANCE RF AMPLIFIER 有权
标题翻译：低输出阻抗RF放大器
公开(公告)号：US20130093516A1
公开(公告)日：2013-04-18
申请号：US13692309
申请日：2012-12-03
申请人： Susanne Paul , Marius Goldenberg
发明人： Susanne Paul , Marius Goldenberg
IPC分类号： H03F3/45 , H03F3/21
CPC分类号： H03F3/45179 , H03F1/086 , H03F1/565 , H03F3/21 , H03F3/45237 , H03F3/505 , H03F2200/411 , H03F2200/492 , H03F2200/495 , H03F2200/69 , H03F2203/45394 , H03F2203/45612 , H03F2203/5042
摘要： A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.
摘要翻译：射频（RF）功率放大器包括驱动共源输出放大器级的输入的低阻抗预驱动器。前置放大器包括第一晶体管，其具有耦合到前置放大器RF输入节点的第一端子，耦合到前置放大器RF输出节点的第二端子和耦合到电源电压节点的第三端子。第一电感器耦合在RF输出节点和偏置电压节点之间。基本上同相的RF输入节点和RF输出节点上的相应的第一和第二电压之间的电压差确定通过第一晶体管的电流。

7. 发明申请

US20110133838A1 LOW OUTPUT IMPEDANCE RF AMPLIFIER 有权
标题翻译：低输出阻抗RF放大器
公开(公告)号：US20110133838A1
公开(公告)日：2011-06-09
申请号：US12633312
申请日：2009-12-08
申请人： Susanne Paul , Marius Goldenberg
发明人： Susanne Paul , Marius Goldenberg
IPC分类号： H03F3/45 , H03F3/16
CPC分类号： H03F3/45179 , H03F1/086 , H03F1/565 , H03F3/21 , H03F3/45237 , H03F3/505 , H03F2200/411 , H03F2200/492 , H03F2200/495 , H03F2200/69 , H03F2203/45394 , H03F2203/45612 , H03F2203/5042
摘要： A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.
摘要翻译：射频（RF）功率放大器包括驱动共源输出放大器级的输入的低阻抗预驱动器。前置放大器包括第一晶体管，其具有耦合到前置放大器RF输入节点的第一端子，耦合到前置放大器RF输出节点的第二端子和耦合到电源电压节点的第三端子。第一电感器耦合在RF输出节点和偏置电压节点之间。基本上同相的RF输入节点和RF输出节点上的相应的第一和第二电压之间的电压差确定通过第一晶体管的电流。

8. 发明授权

US07400198B2 Active circuit having improved linearity using multiple gated transistor 失效
标题翻译：使用多门控晶体管的有源电路具有改善的线性度
公开(公告)号：US07400198B2
公开(公告)日：2008-07-15
申请号：US11178481
申请日：2005-07-12
申请人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
发明人： Tae Wook Kim , Bonkee Kim , Kwyro Lee
IPC分类号： H03F3/68
CPC分类号： H03F3/505 , H03F1/3205 , H03F1/3211 , H03F3/345 , H03F2200/453 , H03F2203/5042
摘要： The present invention relates to improved linearity of an active circuit, and more particularly, to an active circuit having improved linearity using a main circuit unit and an assistant circuit unit. According to the present invention, the common gate circuit includes a main circuit unit consisting of a common gate circuit having a drain terminal through which an input signal is output as an output signal, an assistant circuit unit having a common gate circuit in order to assist the linearity of the main circuit unit, a biasing unit for biasing the main circuit unit and the assistant circuit unit, respectively, and load stages connected to output stages of the main circuit unit and the assistant circuit unit, wherein the output stages of the main circuit unit and the assistant circuit unit are coupled to each other.
摘要翻译：本发明涉及有源电路的改进的线性度，更具体地，涉及使用主电路单元和辅助电路单元具有改进的线性度的有源电路。根据本发明，公共门电路包括主电路单元，该主电路单元由具有输出信号作为输出信号输出的漏极端子的公共门电路组成，具有公共门电路的辅助电路单元以辅助主电路单元的线性度，分别用于偏置主电路单元和辅助电路单元的偏置单元和连接到主电路单元和辅助电路单元的输出级的负载级，其中主电路单元和辅助电路单元的输出级电路单元和辅助电路单元彼此耦合。

9. 发明授权

US08922282B2 Low output impedance RF amplifier 有权
标题翻译：低输出阻抗RF放大器
公开(公告)号：US08922282B2
公开(公告)日：2014-12-30
申请号：US13692309
申请日：2012-12-03
申请人： Black Sand Technologies, Inc.
发明人： Susanne Paul , Marius Goldenberg
IPC分类号： H03F3/191 , H03F3/45 , H03F1/08 , H03F1/56 , H03F3/50 , H03F3/21
CPC分类号： H03F3/45179 , H03F1/086 , H03F1/565 , H03F3/21 , H03F3/45237 , H03F3/505 , H03F2200/411 , H03F2200/492 , H03F2200/495 , H03F2200/69 , H03F2203/45394 , H03F2203/45612 , H03F2203/5042
摘要： A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.
摘要翻译：射频（RF）功率放大器包括驱动共源输出放大器级的输入的低阻抗预驱动器。前置放大器包括第一晶体管，其具有耦合到前置放大器RF输入节点的第一端子，耦合到前置放大器RF输出节点的第二端子和耦合到电源电压节点的第三端子。第一电感器耦合在RF输出节点和偏置电压节点之间。基本上同相的RF输入节点和RF输出节点上的相应的第一和第二电压之间的电压差确定通过第一晶体管的电流。

10. 发明授权

US08324973B2 Low output impedance RF amplifier 有权
标题翻译：低输出阻抗RF放大器
公开(公告)号：US08324973B2
公开(公告)日：2012-12-04
申请号：US12633312
申请日：2009-12-08
申请人： Susanne Paul , Marius Goldenberg
发明人： Susanne Paul , Marius Goldenberg
IPC分类号： H03F3/191 , H03F3/45
CPC分类号： H03F3/45179 , H03F1/086 , H03F1/565 , H03F3/21 , H03F3/45237 , H03F3/505 , H03F2200/411 , H03F2200/492 , H03F2200/495 , H03F2200/69 , H03F2203/45394 , H03F2203/45612 , H03F2203/5042
摘要： A radio frequency (RF) power amplifier includes a low impedance pre-driver driving the input of a common-source output amplifier stage. The preamplifier includes a first transistor that has a first terminal coupled to a preamplifier RF input node, a second terminal coupled to a preamplifier RF output node, and a third terminal coupled to a supply voltage node. A first inductor is coupled between the RF output node and a bias voltage node. A voltage difference between respective first and second voltages on the RF input node and the RF output node that are substantially in phase, determines current through the first transistor.
摘要翻译：射频（RF）功率放大器包括驱动共源输出放大器级的输入的低阻抗预驱动器。前置放大器包括第一晶体管，其具有耦合到前置放大器RF输入节点的第一端子，耦合到前置放大器RF输出节点的第二端子和耦合到电源电压节点的第三端子。第一电感器耦合在RF输出节点和偏置电压节点之间。基本上同相的RF输入节点和RF输出节点上的相应的第一和第二电压之间的电压差确定通过第一晶体管的电流。

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