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1. 发明授权

US10847590B2 Electroluminescent display device and method of manufacturing the same 有权
公开(公告)号：US10847590B2
公开(公告)日：2020-11-24
申请号：US16706405
申请日：2019-12-06
申请人： LG DISPLAY CO., LTD.
发明人： Hak-Min Lee , Young-Jun Yu , Hee-Jin Kim , Myung-O Joo , Sung-Soo Park
IPC分类号： H01L27/32 , H01L51/00 , H01L51/56
CPC分类号： H01L27/3246 , H01L51/0007 , H01L51/0018 , H01L51/0028 , H01L51/56 , H01L2227/323
摘要： An electroluminescent display device can include a plurality of sub-pixels arranged on a substrate along a first direction and a second direction; a light-emitting diode disposed at each sub-pixel and including a first electrode, a light-emitting layer and a second electrode; a first bank disposed between adjacent sub-pixels along the second direction and overlapping edges of the first electrode; a second bank having an opening corresponding to the sub-pixels arranged along the second direction and disposed between adjacent sub-pixels along the first direction; and a third bank on side surfaces of the second bank facing each other along the second direction.

2. 发明授权

US10614964B2 Multi-solvent perovskite composition 有权
公开(公告)号：US10614964B2
公开(公告)日：2020-04-07
申请号：US16069032
申请日：2017-01-17
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Jeffrey Gerhart Tait , Kira Gardner , Robert Gehlhaar , Weiming Qiu , Tamara Merckx
IPC分类号： C30B29/00 , H01L29/00 , H01L51/00 , H01G9/20 , C23C18/12 , C07F7/24 , C09D5/24 , H01G9/00 , H01L51/42
CPC分类号： H01G9/2009 , C07F7/24 , C09D5/24 , C23C18/1216 , H01G9/0036 , H01L51/006 , H01L51/0007 , H01L51/0028 , H01L51/0077 , H01L51/4253 , H01L51/0056 , H01L51/4226
摘要： The present invention relates to a composition comprising one or more perovskite precursors dissolved in a mixture of solvents comprising:

i. one or more polar aprotic solvents, each selected in such a way that it can, when used in absence of other components, dissolve said one or more perovskite precursors,
ii. one or more linear alcohols of general formula CnH2n+1OH, wherein n is from 1 to 12, and
iii. optionally, one or more acids

wherein the polar aprotic solvent or mixture of polar aprotic solvents represent between 50 and 95 vol % of the mixture of solvents, wherein the vol % of the mixture of solvents not occupied by polar aprotic solvents is occupied for at least 90 vol %, preferably for 100 vol %, by the one or more linear alcohols, and the one or more acids if present.

3. 发明申请

US20180337358A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR, METHOD FOR FABRICATING ARRAY SUBSTRATE, AND A DISPLAY APPARATUS 审中-公开
公开(公告)号：US20180337358A1
公开(公告)日：2018-11-22
申请号：US15576836
申请日：2017-06-22
申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
发明人： Huafei XIE
IPC分类号： H01L51/05 , H01L51/00 , H01L51/50 , H01L27/28 , H01L27/32 , G02F1/1368 , G02F1/1335
CPC分类号： H01L51/0566 , G02F1/133514 , G02F1/1368 , G02F2202/36 , H01L27/283 , H01L27/322 , H01L27/3227 , H01L27/3274 , H01L51/0007 , H01L51/001 , H01L51/0018 , H01L51/0023 , H01L51/0028 , H01L51/003 , H01L51/0048 , H01L51/0541 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5096 , H01L2251/301 , H01L2251/558
摘要： The present application provides a method for fabricating a thin film transistor, a method for fabricating an array substrate, and a display apparatus. A method for fabricating a thin film transistor including: providing a substrate; covering an isolating layer on the substrate; coating an active layer precursor solution on the isolation layer; forming an active layer thin film by the active layer precursor solution; dividing the active layer thin film into a small module active layer, the mobility of the active layer of the thin film transistor is increased, and to drive the quantum dot light emitting device of the array substrate through the thin film transistor with high mobility to improve the display luminescence performance of the display apparatus.

4. 发明申请

US20180294106A1 GAS-INDUCED PEROVSKITE FORMATION 审中-公开
公开(公告)号：US20180294106A1
公开(公告)日：2018-10-11
申请号：US15574006
申请日：2016-05-16
申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
发明人： Yabing Qi , Sonia Ruiz Raga
IPC分类号： H01G9/20 , H01L51/00 , H01L51/42 , H01G9/00
CPC分类号： H01G9/2009 , H01G9/0036 , H01L51/0007 , H01L51/0008 , H01L51/0028 , H01L51/005 , H01L51/0077 , H01L51/4226 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.

5. 发明授权

US09960390B2 Method of producing an optoelectronic device and optoelectronic device 有权
公开(公告)号：US09960390B2
公开(公告)日：2018-05-01
申请号：US14914062
申请日：2014-08-27
申请人： OSRAM OLED GmbH
发明人： Stefan Höfle , Alexander Colsmann , Manuel Reinhard , Uli Lemmer
IPC分类号： H01L51/56 , H01L51/52 , H01L51/00
CPC分类号： H01L51/5278 , H01L51/0028 , H01L51/5206 , H01L51/5221 , H01L2251/303
摘要： A method of producing an optoelectronic device includes A) providing a substrate, B) applying a first electrode to the substrate, C) applying a first organic layer stack to the first electrode, D) producing a charge-generating layer stack on the first organic layer stack, E) applying a second organic layer stack to the charge-generating layer stack, and F) applying a second electrode to the second organic layer stack, wherein step D) includes D1) applying a solution of a first metal oxide precursor to the first organic layer stack, D2) generating a first charge-generating layer comprising a first metal oxide, D3) applying a solution of a second metal oxide precursor to the first charge-generating layer, and D4) generating a second charge-generating layer comprising a second metal oxide.

6. 发明申请

US20170125172A1 PEROVSKITE HYBRID SOLAR CELLS 审中-公开
公开(公告)号：US20170125172A1
公开(公告)日：2017-05-04
申请号：US15339501
申请日：2016-10-31
申请人： Xiong Gong , Chang Liu , Kai Wang
发明人： Xiong Gong , Chang Liu , Kai Wang
IPC分类号： H01G9/20 , H01L51/42 , H01L51/44 , H01L51/00
CPC分类号： H01L51/0047 , H01L51/0007 , H01L51/0028 , H01L51/0037 , H01L51/0077 , H01L51/4273 , Y02E10/549
摘要： Perovskite hybrid solar cells utilize a bulk heterojunction (BHJ) active layer that is formed as a composite of an organometal halide perovskite and a water soluble fullerene, such as A10C60. In alternative embodiments, the BHJ active layer may be formed as a composite of an organometal halide perovskite material and a fullerene, such as PC61BM. Thus, the fullerene acts as an electron extraction acceptor within the BHJ, allowing such solar cells to more efficiently transport the electrons from the fullerene/perovskite interface to a fullerene-based electron transport layer (ETL). As a result, increased fill factor (FF), as well as improvements in the short-circuit current density (JSC) and power conversion efficiency (PCE) are achieved by the solar cells.

7. 发明申请

US20170084400A1 PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS 审中-公开
公开(公告)号：US20170084400A1
公开(公告)日：2017-03-23
申请号：US15126459
申请日：2015-03-17
申请人： MONASH UNIVERSITY
发明人： Yi-bing Cheng , Udo Bach , Leone Spiccia , Fuzhi Huang , Manda Xiao
IPC分类号： H01G9/20 , C30B7/14 , C30B7/06 , H01L51/42 , C30B29/54 , C30B28/04 , H01L51/00 , C30B7/00 , C30B19/10
CPC分类号： H01G9/2009 , C23C18/1216 , C23C18/1258 , C30B7/00 , C30B7/005 , C30B7/06 , C30B7/14 , C30B19/106 , C30B28/04 , C30B29/12 , C30B29/54 , H01G9/2031 , H01L51/0003 , H01L51/0028 , H01L51/0032 , H01L51/4226 , H01L2031/0344 , Y02E10/549 , Y02P70/521
摘要： A method for the preparation of a cohesive non-porous perovskite layer on a substrate (104) comprising: forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film (104) of the solution on the substrate, applying a crystallisation agent (112) to a surface of the film to precipitate perovskite crystals from the 5 solution to form the cohesive non-porous perovskite layer (116) on the substrate.

8. 发明授权

US09570240B1 Controlled crystallization to grow large grain organometal halide perovskite thin film 有权
标题翻译：控制结晶生长大颗粒有机金属卤化物钙钛矿薄膜
公开(公告)号：US09570240B1
公开(公告)日：2017-02-14
申请号：US15228112
申请日：2016-08-04
申请人： The United States of America, as represented by the Secretary of the Air Force
发明人： Michael F Durstock , Santanu Bag
IPC分类号： H01L51/00 , H01G9/20 , H01L51/42
CPC分类号： H01G9/2013 , C30B7/00 , H01L51/0003 , H01L51/0026 , H01L51/0028 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0047 , H01L51/0077 , H01L51/0096 , H01L51/4213 , H01L51/424 , H01L51/4293 , H01L2251/308 , Y02E10/549
摘要： A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.
摘要翻译：提供了一种形成具有微米级钙钛矿颗粒的钙钛矿薄膜的方法。将含有金属离子添加剂的溶液中的PbX 2层施加到结构上。 PbX2层的结构第一次退火。 PbX2在溶剂中暴露于CH3NH3X。暴露的PbX2层的结构第二次退火，得到CH3NH3PbX3层。 X选自Cl，Br，I，CN和SCN组成的组。

9. 发明申请

US20170036461A1 PRINTING BASE AND INKJET PRINTING METHOD 有权
标题翻译：印刷底座和喷墨打印方法
公开(公告)号：US20170036461A1
公开(公告)日：2017-02-09
申请号：US14913287
申请日：2015-07-20
申请人： Boe Technology Group Co., Ltd.
发明人： Chunjing Hu , Li Sun
IPC分类号： B41J11/00
CPC分类号： B41J2/01 , B41J11/0015 , B41M5/0011 , H01L27/3223 , H01L51/00 , H01L51/0005 , H01L51/0028 , H01L51/56
摘要： A printing base comprises: a carrying base, an extension base, a vacuum pump and a gas injection valve; the extension base is located at the periphery of the carrying base; the surface of the carrying base has at least one absorbing hole for absorbing the substrate, and the surface of the extension base has at least one injecting hole. By adding a extension base at the periphery of the carrying base, the invention can avoid the provision of test area at the periphery of the display area on the substrate, and increase the area of the display area, and in turn reduce the bezel width of the liquid crystal display panel.
摘要翻译：印刷基底包括：承载基座，延伸基座，真空泵和气体注入阀; 延伸基座位于承载基座的周边; 承载基座的表面具有用于吸收基板的至少一个吸收孔，延伸基体的表面具有至少一个注入孔。通过在承载基座的周围添加延伸基部，本发明可以避免在基板上的显示区域的周边设置测试区域，并且增加显示区域的面积，并且进而减小边框宽度液晶显示面板。

10. 发明申请

US20150064837A1 ORGANIC ELECTRONIC DEVICES WITH MULTIPLE SOLUTION-PROCESSED LAYERS 有权
标题翻译：具有多个解决方案的层的有机电子器件
公开(公告)号：US20150064837A1
公开(公告)日：2015-03-05
申请号：US14473995
申请日：2014-08-29
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN
发明人： Stephen R. FORREST , Brian E. LASSITER , Jeramy D. ZIMMERMAN
IPC分类号： H01L51/00 , H01L27/30
CPC分类号： H01L51/0028 , H01L27/302 , H01L51/0007 , H01L51/001 , H01L51/0047 , H01L51/424
摘要： A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.
摘要翻译：串联有机感光装置的制造方法包括通过对溶解在第一溶剂中的有机电子给体型材料进行溶液处理来沉积有机电子给体型材料膜的第一层; 通过干沉积工艺在有机电子给体型材料膜的第一层上沉积第一层有机电子受体型材料; 通过干沉积工艺在中间堆叠上沉积导电层; 通过溶解在第二溶剂中的有机电子给体型材料的溶液处理，在导电层上沉积第二层有机电子给体型材料，其中有机电子受体型材料和导电层不溶于第二溶剂; 通过干沉积工艺在有机电子给体型材料膜的第二层上沉积第二层有机电子受体型材料，从而形成叠层。

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