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1. 发明申请

US20180337358A1 METHOD FOR FABRICATING THIN FILM TRANSISTOR, METHOD FOR FABRICATING ARRAY SUBSTRATE, AND A DISPLAY APPARATUS 审中-公开
公开(公告)号：US20180337358A1
公开(公告)日：2018-11-22
申请号：US15576836
申请日：2017-06-22
申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
发明人： Huafei XIE
IPC分类号： H01L51/05 , H01L51/00 , H01L51/50 , H01L27/28 , H01L27/32 , G02F1/1368 , G02F1/1335
CPC分类号： H01L51/0566 , G02F1/133514 , G02F1/1368 , G02F2202/36 , H01L27/283 , H01L27/322 , H01L27/3227 , H01L27/3274 , H01L51/0007 , H01L51/001 , H01L51/0018 , H01L51/0023 , H01L51/0028 , H01L51/003 , H01L51/0048 , H01L51/0541 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5096 , H01L2251/301 , H01L2251/558
摘要： The present application provides a method for fabricating a thin film transistor, a method for fabricating an array substrate, and a display apparatus. A method for fabricating a thin film transistor including: providing a substrate; covering an isolating layer on the substrate; coating an active layer precursor solution on the isolation layer; forming an active layer thin film by the active layer precursor solution; dividing the active layer thin film into a small module active layer, the mobility of the active layer of the thin film transistor is increased, and to drive the quantum dot light emitting device of the array substrate through the thin film transistor with high mobility to improve the display luminescence performance of the display apparatus.

2. 发明申请

US20180294106A1 GAS-INDUCED PEROVSKITE FORMATION 审中-公开
公开(公告)号：US20180294106A1
公开(公告)日：2018-10-11
申请号：US15574006
申请日：2016-05-16
申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION
发明人： Yabing Qi , Sonia Ruiz Raga
IPC分类号： H01G9/20 , H01L51/00 , H01L51/42 , H01G9/00
CPC分类号： H01G9/2009 , H01G9/0036 , H01L51/0007 , H01L51/0008 , H01L51/0028 , H01L51/005 , H01L51/0077 , H01L51/4226 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.

3. 发明授权

US09960390B2 Method of producing an optoelectronic device and optoelectronic device 有权
公开(公告)号：US09960390B2
公开(公告)日：2018-05-01
申请号：US14914062
申请日：2014-08-27
申请人： OSRAM OLED GmbH
发明人： Stefan Höfle , Alexander Colsmann , Manuel Reinhard , Uli Lemmer
IPC分类号： H01L51/56 , H01L51/52 , H01L51/00
CPC分类号： H01L51/5278 , H01L51/0028 , H01L51/5206 , H01L51/5221 , H01L2251/303
摘要： A method of producing an optoelectronic device includes A) providing a substrate, B) applying a first electrode to the substrate, C) applying a first organic layer stack to the first electrode, D) producing a charge-generating layer stack on the first organic layer stack, E) applying a second organic layer stack to the charge-generating layer stack, and F) applying a second electrode to the second organic layer stack, wherein step D) includes D1) applying a solution of a first metal oxide precursor to the first organic layer stack, D2) generating a first charge-generating layer comprising a first metal oxide, D3) applying a solution of a second metal oxide precursor to the first charge-generating layer, and D4) generating a second charge-generating layer comprising a second metal oxide.

4. 发明申请

US20170125172A1 PEROVSKITE HYBRID SOLAR CELLS 审中-公开
公开(公告)号：US20170125172A1
公开(公告)日：2017-05-04
申请号：US15339501
申请日：2016-10-31
申请人： Xiong Gong , Chang Liu , Kai Wang
发明人： Xiong Gong , Chang Liu , Kai Wang
IPC分类号： H01G9/20 , H01L51/42 , H01L51/44 , H01L51/00
CPC分类号： H01L51/0047 , H01L51/0007 , H01L51/0028 , H01L51/0037 , H01L51/0077 , H01L51/4273 , Y02E10/549
摘要： Perovskite hybrid solar cells utilize a bulk heterojunction (BHJ) active layer that is formed as a composite of an organometal halide perovskite and a water soluble fullerene, such as A10C60. In alternative embodiments, the BHJ active layer may be formed as a composite of an organometal halide perovskite material and a fullerene, such as PC61BM. Thus, the fullerene acts as an electron extraction acceptor within the BHJ, allowing such solar cells to more efficiently transport the electrons from the fullerene/perovskite interface to a fullerene-based electron transport layer (ETL). As a result, increased fill factor (FF), as well as improvements in the short-circuit current density (JSC) and power conversion efficiency (PCE) are achieved by the solar cells.

5. 发明申请

US20170084400A1 PRECIPITATION PROCESS FOR PRODUCING PEROVSKITE-BASED SOLAR CELLS 审中-公开
公开(公告)号：US20170084400A1
公开(公告)日：2017-03-23
申请号：US15126459
申请日：2015-03-17
申请人： MONASH UNIVERSITY
发明人： Yi-bing Cheng , Udo Bach , Leone Spiccia , Fuzhi Huang , Manda Xiao
IPC分类号： H01G9/20 , C30B7/14 , C30B7/06 , H01L51/42 , C30B29/54 , C30B28/04 , H01L51/00 , C30B7/00 , C30B19/10
CPC分类号： H01G9/2009 , C23C18/1216 , C23C18/1258 , C30B7/00 , C30B7/005 , C30B7/06 , C30B7/14 , C30B19/106 , C30B28/04 , C30B29/12 , C30B29/54 , H01G9/2031 , H01L51/0003 , H01L51/0028 , H01L51/0032 , H01L51/4226 , H01L2031/0344 , Y02E10/549 , Y02P70/521
摘要： A method for the preparation of a cohesive non-porous perovskite layer on a substrate (104) comprising: forming a thin film of a solution containing a perovskite material dissolved in a solvent onto the substrate to form a liquid film (104) of the solution on the substrate, applying a crystallisation agent (112) to a surface of the film to precipitate perovskite crystals from the 5 solution to form the cohesive non-porous perovskite layer (116) on the substrate.

6. 发明授权

US09570240B1 Controlled crystallization to grow large grain organometal halide perovskite thin film 有权
标题翻译：控制结晶生长大颗粒有机金属卤化物钙钛矿薄膜
公开(公告)号：US09570240B1
公开(公告)日：2017-02-14
申请号：US15228112
申请日：2016-08-04
申请人： The United States of America, as represented by the Secretary of the Air Force
发明人： Michael F Durstock , Santanu Bag
IPC分类号： H01L51/00 , H01G9/20 , H01L51/42
CPC分类号： H01G9/2013 , C30B7/00 , H01L51/0003 , H01L51/0026 , H01L51/0028 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0047 , H01L51/0077 , H01L51/0096 , H01L51/4213 , H01L51/424 , H01L51/4293 , H01L2251/308 , Y02E10/549
摘要： A method of forming perovskite thin films with micron-sized perovskite grains is provided. A layer of PbX2 in a solution containing a metal ion additive is applied to a structure. The structure with the PbX2 layer is annealed a first time. The PbX2 is exposed to CH3NH3X in a solvent. The structure with the exposed PbX2 layer is annealed a second time resulting in a CH3NH3PbX3 layer. X is selected from a group consisting of Cl, Br, I, CN, and SCN.
摘要翻译：提供了一种形成具有微米级钙钛矿颗粒的钙钛矿薄膜的方法。将含有金属离子添加剂的溶液中的PbX 2层施加到结构上。 PbX2层的结构第一次退火。 PbX2在溶剂中暴露于CH3NH3X。暴露的PbX2层的结构第二次退火，得到CH3NH3PbX3层。 X选自Cl，Br，I，CN和SCN组成的组。

7. 发明申请

US20170036461A1 PRINTING BASE AND INKJET PRINTING METHOD 有权
标题翻译：印刷底座和喷墨打印方法
公开(公告)号：US20170036461A1
公开(公告)日：2017-02-09
申请号：US14913287
申请日：2015-07-20
申请人： Boe Technology Group Co., Ltd.
发明人： Chunjing Hu , Li Sun
IPC分类号： B41J11/00
CPC分类号： B41J2/01 , B41J11/0015 , B41M5/0011 , H01L27/3223 , H01L51/00 , H01L51/0005 , H01L51/0028 , H01L51/56
摘要： A printing base comprises: a carrying base, an extension base, a vacuum pump and a gas injection valve; the extension base is located at the periphery of the carrying base; the surface of the carrying base has at least one absorbing hole for absorbing the substrate, and the surface of the extension base has at least one injecting hole. By adding a extension base at the periphery of the carrying base, the invention can avoid the provision of test area at the periphery of the display area on the substrate, and increase the area of the display area, and in turn reduce the bezel width of the liquid crystal display panel.
摘要翻译：印刷基底包括：承载基座，延伸基座，真空泵和气体注入阀; 延伸基座位于承载基座的周边; 承载基座的表面具有用于吸收基板的至少一个吸收孔，延伸基体的表面具有至少一个注入孔。通过在承载基座的周围添加延伸基部，本发明可以避免在基板上的显示区域的周边设置测试区域，并且增加显示区域的面积，并且进而减小边框宽度液晶显示面板。

8. 发明申请

US20150064837A1 ORGANIC ELECTRONIC DEVICES WITH MULTIPLE SOLUTION-PROCESSED LAYERS 有权
标题翻译：具有多个解决方案的层的有机电子器件
公开(公告)号：US20150064837A1
公开(公告)日：2015-03-05
申请号：US14473995
申请日：2014-08-29
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN
发明人： Stephen R. FORREST , Brian E. LASSITER , Jeramy D. ZIMMERMAN
IPC分类号： H01L51/00 , H01L27/30
CPC分类号： H01L51/0028 , H01L27/302 , H01L51/0007 , H01L51/001 , H01L51/0047 , H01L51/424
摘要： A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.
摘要翻译：串联有机感光装置的制造方法包括通过对溶解在第一溶剂中的有机电子给体型材料进行溶液处理来沉积有机电子给体型材料膜的第一层; 通过干沉积工艺在有机电子给体型材料膜的第一层上沉积第一层有机电子受体型材料; 通过干沉积工艺在中间堆叠上沉积导电层; 通过溶解在第二溶剂中的有机电子给体型材料的溶液处理，在导电层上沉积第二层有机电子给体型材料，其中有机电子受体型材料和导电层不溶于第二溶剂; 通过干沉积工艺在有机电子给体型材料膜的第二层上沉积第二层有机电子受体型材料，从而形成叠层。

9. 发明授权

US08828793B2 Method of manufacturing multilayered thin film through phase separation of blend of organic semiconductor/insulating polymer and organic thin film transistor using the same 有权
标题翻译：通过使用该有机半导体/绝缘聚合物和有机薄膜晶体管的共混物的相分离制造多层薄膜的方法
公开(公告)号：US08828793B2
公开(公告)日：2014-09-09
申请号：US13140740
申请日：2009-04-16
申请人： Kil Won Cho , Wi Hyoung Lee
发明人： Kil Won Cho , Wi Hyoung Lee
IPC分类号： H01L51/40 , H01L51/00 , H01L51/05
CPC分类号： H01L51/0558 , H01L51/0028 , H01L51/052
摘要： Disclosed is a method of manufacturing a multilayered thin film including a crystalline small molecular organic semiconductor layer and an insulating polymer layer for use in an organic thin film transistor through phase separation and annealing. The method includes applying a blend solution of organic semiconductor and insulating polymer on a substrate thus forming a vertically phase-separated thin film, which is then annealed so that the organic semiconductor contained in the insulating polymer layer is crystallized while being transferred to the surface layer. A high-performance organic thin film transistor fabricated using the same is also provided. The multilayered thin film in which the crystalline organic semiconductor layer is located on the insulating polymer layer through transfer and crystallization of the organic semiconductor can be used to fabricate the high-performance organic thin film transistor.
摘要翻译：公开了一种通过相分离和退火制造用于有机薄膜晶体管的结晶小分子有机半导体层和绝缘聚合物层的多层薄膜的制造方法。该方法包括将有机半导体和绝缘聚合物的共混溶液施加在基底上，从而形成垂直相分离的薄膜，然后将其退火，使得包含在绝缘聚合物层中的有机半导体在被转移到表面层的同时被结晶。还提供了使用其制造的高性能有机薄膜晶体管。结晶有机半导体层通过有机半导体的转移和结晶位于绝缘聚合物层上的多层薄膜可用于制造高性能有机薄膜晶体管。

10. 发明授权

US08273599B2 Enhancing performance characteristics of organic semiconducting films by improved solution processing 有权
标题翻译：通过改进溶液处理提高有机半导体膜的性能特征
公开(公告)号：US08273599B2
公开(公告)日：2012-09-25
申请号：US11949713
申请日：2007-12-03
申请人： Guillermo C. Bazan , Alan J. Heeger , Daniel Moses , Jeffrey Peet
发明人： Guillermo C. Bazan , Alan J. Heeger , Daniel Moses , Jeffrey Peet
IPC分类号： H01L51/40
CPC分类号： H01L51/005 , B82Y10/00 , H01L31/0256 , H01L51/0007 , H01L51/0028 , H01L51/0036 , H01L51/0047 , H01L51/4253 , Y02E10/549
摘要： Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes.
摘要翻译：公开了改进的共轭聚合物膜的性能的加工方法，以及由此制备的增强的共轭聚合物膜。在用于形成共轭聚合物膜的溶液中加入低分子量含烷基的分子导致改善的光电导率和其它电子性质的改进。增强的共轭聚合物膜可以用于各种电子器件，例如太阳能电池和光电二极管。

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