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1. 发明授权

US4190466A Method for making a bipolar transistor structure utilizing self-passivating diffusion sources 失效
标题翻译：利用自钝化扩散源制造双极晶体管结构的方法
公开(公告)号：US4190466A
公开(公告)日：1980-02-26
申请号：US863182
申请日：1977-12-22
申请人： Arup Bhattacharyya , Francis W. Wiedman, III
发明人： Arup Bhattacharyya , Francis W. Wiedman, III
IPC分类号： H01L29/73 , G11C11/404 , H01L21/225 , H01L21/285 , H01L21/331 , H01L21/74 , H01L21/8222 , H01L21/8229 , H01L27/07 , H01L27/102 , H01L21/265 , H01L21/31
CPC分类号： H01L21/8222 , G11C11/404 , H01L21/2257 , H01L21/28525 , H01L27/0777 , H01L27/1023 , Y10S148/116 , Y10S148/131
摘要： A semiconductor structure, formed within a recessed oxide isolation region, includes a semiconductor substrate of a first conductivity type within which a collector of opposite conductivity type is formed below the surface of the substrate and extending in part to the surface of the substrate for ease of contact. A first layer of doped polycrystalline silicon or polysilicon is formed on a first portion of the surface of the substrate and in electrical contact with the substrate which acts as the base of a transistor. The first polysilicon layer is oxidized to form an outer insulating layer thereover. A second doped polysilicon layer is disposed over the outer insulating layer onto a second portion of the surface of the substrate so as to be spaced from the first portion by only the thickness of the outer insulating layer on the first polysilicon layer. The dopant in the second polysilicon layer is driven into the surface of the semiconductor substrate to form an emitter therein. Means, which may include a portion of the second polysilicon layer, are provided for electrically contacting the collector to thus form a completed compact bipolar transistor which has very high performance.
摘要翻译：形成在凹陷氧化物隔离区域内的半导体结构包括第一导电类型的半导体衬底，其中在衬底的表面下方形成相反导电类型的集电极，并且部分地延伸到衬底的表面，以便于联系。掺杂多晶硅或多晶硅的第一层形成在衬底的表面的第一部分上并且与用作晶体管的基极的衬底电接触。第一多晶硅层被氧化以在其上形成外绝缘层。第二掺杂多晶硅层设置在外绝缘层上方到衬底表面的第二部分上，以便与第一部分隔开仅第一多晶硅层上外绝缘层的厚度。第二多晶硅层中的掺杂剂被驱动到半导体衬底的表面中以在其中形成发射体。可以包括第二多晶硅层的一部分的装置用于电接触集电体，从而形成具有非常高性能的完整的紧凑型双极晶体管。

2. 发明授权

US3539884A Integrated transistor and variable capacitor 失效
标题翻译：集成晶体管和可变电容器
公开(公告)号：US3539884A
公开(公告)日：1970-11-10
申请号：US3539884D
申请日：1968-09-18
申请人： MOTOROLA INC
发明人： SCHAFFNER GERALD
IPC分类号： H01L23/045 , H01L23/64 , H01L27/07 , H01L1/06
CPC分类号： H01L23/045 , H01L23/642 , H01L24/48 , H01L27/0777 , H01L2224/48137 , H01L2224/4823 , H01L2224/49113 , H01L2924/00014 , H01L2924/12034 , H01L2924/14 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/05599

3. 发明授权

US4003076A Single bipolar transistor memory cell and method 失效
标题翻译：单双极晶体管存储单元及方法
公开(公告)号：US4003076A
公开(公告)日：1977-01-11
申请号：US574508
申请日：1975-05-05
申请人： Bohumil Polata , James A. Marley, Jr.
发明人： Bohumil Polata , James A. Marley, Jr.
IPC分类号： G11C11/404 , H01L21/74 , H01L27/07 , H01L29/72
CPC分类号： H01L21/74 , G11C11/404 , H01L27/0777
摘要： Single bipolar transistor memory cell in which information is stored on the collector to substrate capacitance. This capacitance may be enhanced by an additional diffused region. Storage and retrieval of information is accomplished through only two leads connected to the transistor which is operated so that a portion of the base is fully depleted during a portion of the operating memory cycle of the memory cell.
摘要翻译：单极双极晶体管存储单元，其中信息存储在集电极到基板电容上。该电容可以通过附加的扩散区域增强。信息的存储和检索仅通过连接到晶体管的两个引线来完成，晶体管的操作使得在存储单元的操作存储器周期的一部分期间基极的一部分被完全耗尽。

4. 发明授权

US3818463A Semiconductor information storage devices 失效
标题翻译：半导体信息存储设备
公开(公告)号：US3818463A
公开(公告)日：1974-06-18
申请号：US36810673
申请日：1973-06-08
申请人： FERRANTI LTD
发明人： GRUNDY D
IPC分类号： G11C11/404 , G11C11/4067 , G11C11/4091 , H01L27/06 , H01L27/07 , H01L27/102 , G11C11/40 , G11C11/24
CPC分类号： G11C11/4091 , G11C11/404 , G11C11/4067 , H01L27/0652 , H01L27/0755 , H01L27/0777 , H01L27/1023
摘要： A cell of a monolithic semiconductor memory store comprises a bi-directional bipolar transistor with a capacitance connected to the collector, for example, a collector-diffusion-isolation transistor, there being associated with the cell, writing means which either charges the capacitance or not when the transistor is capable of conducting in the reverse direction, and reading means which produces an output indicative of whether or not the capacitance is charged.
摘要翻译：单片半导体存储器存储器的单元包括具有连接到集电极的电容的双向双极晶体管，例如与集电极 - 扩散隔离晶体管相关联的存储器扩散隔离晶体管，或者为电容充电的写入装置当晶体管能够反向导通时，以及产生指示电容是否被充电的输出的读取装置。

5. 发明授权

US4188671A Switched-capacitor memory 失效
标题翻译：开关电容内存
公开(公告)号：US4188671A
公开(公告)日：1980-02-12
申请号：US959207
申请日：1978-11-07
申请人： Dennis J. Lynes
发明人： Dennis J. Lynes
IPC分类号： G11C11/404 , H01L21/74 , H01L21/8229 , H01L23/535 , H01L27/07 , H01L27/108 , G11C11/24
CPC分类号： H01L27/108 , G11C11/404 , H01L21/743 , H01L21/8229 , H01L23/535 , H01L27/0777 , H01L2924/0002
摘要： A memory cell comprising a single transistor and an associated capacitor constitutes the basic building block of a new and improved random-access-memory array. If, for example, the GIMIC-O technology is used for fabricating the cell, it is possible to achieve a bipolar cell whose area is less than one square mil. An advantgeous 16K-bit LSI memory chip characterized by high speed and low cost is thereby made feasible. An MOS version of the memory cell is also proposed.
摘要翻译：包括单个晶体管和相关联的电容器的存储单元构成新的和改进的随机存取存储器阵列的基本构建块。例如，如果将GIMIC-O技术用于制造电池，则可以实现面积小于1平方密耳的双极电池。因此，以高速度和低成本为特征的有利的16K位LSI存储器芯片是可行的。还提出了MOS版本的存储器单元。

6. 发明授权

US3648798A Speed control system for an automotive vehicle 失效
标题翻译：汽车变速控制系统
公开(公告)号：US3648798A
公开(公告)日：1972-03-14
申请号：US3648798D
申请日：1970-06-02
申请人： ZBIGNIEW J JANIA
发明人： JANIA ZBIGNIEW J
IPC分类号： B60K31/10 , H01L27/07 , B60K31/00
CPC分类号： H01L27/0777 , B60K31/105
摘要： An electronic speed control system for an automotive vehicle that is driven by a propulsive means, preferably in the form of an internal combustion engine, the speed of which is controlled by a throttle means. An electrically controlled actuating means is coupled to the throttle means for controlling its position. The speed control system includes means for generating a first signal having a magnitude proportional to vehicle speed, an amplifying means having a high input impedance terminal and a capacitor connected in series with the means for generating this signal and the high input impedance terminal of the amplifying means. Means are also provided for developing a feedback signal having a magnitude that is a function of the position of the throttle means. The amplifying means has a second input terminal connected to this feedback means and an output terminal coupled to control the actuating means. Circuit means are provided, including a switch, that directly conductively couples the output terminal of the amplifying means to the high input impedance terminal, and means are provided for closing this switch when the ignition switch of the vehicle is closed. A set speed switch under the control of the vehicle operator is employed to open this switch when the set speed switch is actuated so that a command speed signal is set across the capacitor and the amplifying means is enabled to combine the first signal, the command speed signal and the feedback signal to supply an actuating signal to the actuating means.
摘要翻译：一种用于机动车辆的电子速度控制系统，其由优选为内燃机形式的推进装置驱动，其速度由节流装置控制。电控致动装置联接到节流装置以控制其位置。速度控制系统包括用于产生具有与车辆速度成比例的幅度的第一信号的装置，具有高输入阻抗端子的放大装置和与用于产生该信号的装置串联的电容器和放大器的高输入阻抗端子手段。还提供了用于开发具有作为节流装置的位置的函数的大小的反馈信号的装置。放大装置具有连接到该反馈装置的第二输入端和耦合以控制致动装置的输出端。提供了包括开关的电路装置，该开关将放大装置的输出端直接耦合到高输入阻抗端子，并且提供用于当车辆的点火开关闭合时关闭该开关的装置。在设定速度开关动作的情况下，采用车辆驾驶员的控制下的设定速度开关来开启该开关，使得在电容器两端设置指令速度信号，使放大装置能够组合第一信号，命令速度信号和反馈信号以向致动装置提供致动信号。

7. 发明授权

US3584266A Depletion layer capacitor in particular for monolithic integrated circuits 失效
标题翻译：特殊集成电路的电容层电容器
公开(公告)号：US3584266A
公开(公告)日：1971-06-08
申请号：US3584266D
申请日：1969-05-20
申请人： ITT
发明人： SCHILLING HARALD
IPC分类号： H01L21/00 , H01L27/07 , H01L29/93 , H01L5/00
CPC分类号： H01L29/93 , H01L21/00 , H01L27/0777 , Y10S148/037 , Y10S148/085 , Y10S148/136 , Y10S148/145
摘要： This is a depletion layer capacitor which can be simultaneously formed with other planar transistors on a monolithic integrated circuit. The depletion layer capacitor achieves a high voltage breakdown by producing a PN junction which joins two highly doped regions of opposite conductivity type wherein said junction is established within an epitaxial layer of lower impurity concentration and doesn''t extend to the surface of said epitaxial layer.

8. 发明授权

US3581164A Junction capacitance component, especially for a monolithic microcircuit 失效
标题翻译：连接电容组件，特别适用于单片式微型计算机
公开(公告)号：US3581164A
公开(公告)日：1971-05-25
申请号：US3581164D
申请日：1969-06-18
申请人： ITT
发明人： PFANDER HANS , SCHILLING HARALD , SCHWABE GERHARD
IPC分类号： H01L27/07 , H01L29/93 , H01L5/00 , H01L7/02
CPC分类号： H01L27/0777 , H01L29/93 , Y10S148/037 , Y10S148/085 , Y10S148/145 , Y10S438/901
摘要： This is a junction capacitance component which can be simultaneously formed with other planar transistors on a monolithic integrated circuit. The capacitance component achieves an improved specific capacity for the same voltage breakdown by forming an intermediate region between a wafer and an epitaxial layer, said layer containing a highly doped emitter region base and collector regions, and a highly doped region which extends from said emitter, through said base and collector to, and within the marginal area of, said intermediate region.

9. 发明授权

US4245231A Combination capacitor and transistor structure for use in monolithic circuits 失效
标题翻译：组合电容器和晶体管结构用于单片电路
公开(公告)号：US4245231A
公开(公告)日：1981-01-13
申请号：US973407
申请日：1978-12-26
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： H01L27/07 , H03F3/30 , H01L27/02
CPC分类号： H03F3/30 , H01L27/0777
摘要： A combination capacitor and transistor structure is described wherein the capacitor is formed integrally with the emitter electrode of the transistor. The transistor is formed in a monolithic integrated circuit using generally known techniques and constitutes a vertically integrated PNP device. The emitter electrode of the transistor which comprises a P+ diffusion region is of a predetermined area which is large enough to form the bottom plate of the capacitor. The top plate of the capacitor is formed by growing a dielectric material over the diffused emitter region and then forming metallization thereover. The combination capacitor and transistor structure may be utilized in a bias network for biasing the output stage of an operational amplifier in a class AB mode. The capacitor formed in the combination structure may be utilized as the compensation capacitor in such operational amplifier which utilizes pole splitting techniques. The improvement provided by the invention reduces the surface area of the semiconductor die chip required to form the capacitor and transistor which facilitates greater device density on a particular die chip.
摘要翻译：描述了组合电容器和晶体管结构，其中电容器与晶体管的发射极整体形成。晶体管使用通常已知的技术形成在单片集成电路中，并构成垂直集成的PNP器件。包括P +扩散区的晶体管的发射电极具有足够大以形成电容器底板的预定面积。电容器的顶板通过在扩散的发射极区域上生长介电材料，然后在其上形成金属化而形成。组合电容器和晶体管结构可以用在偏置网络中，用于在AB类模式中偏置运算放大器的输出级。形成在组合结构中的电容器可以用作利用极点分割技术的这种运算放大器中的补偿电容器。本发明提供的改进减少了形成电容器和晶体管所需的半导体芯片的表面积，这有助于在特定芯片上更大的器件密度。

10. 发明授权

US4191899A Voltage variable integrated circuit capacitor and bootstrap driver circuit 失效
标题翻译：电压可变集成电路电容和自举驱动电路
公开(公告)号：US4191899A
公开(公告)日：1980-03-04
申请号：US811028
申请日：1977-06-29
申请人： James J. Tomczak , Richard N. Wilson
发明人： James J. Tomczak , Richard N. Wilson
IPC分类号： H01L27/04 , H01L21/331 , H01L21/822 , H01L27/07 , H01L27/08 , H01L29/73 , H01L29/93 , H03K19/013 , H03K19/018 , H03K19/082 , H03K19/08 , H01L29/92 , H03K19/36
CPC分类号： H01L27/0808 , H01L27/0777 , H01L29/93 , H03K19/013 , H03K19/01806
摘要： An integrated circuit junction capacitor is formed using conventional bipolar transistor technology. Voltage variable capacitance is provided by a reverse biased emitter-base junction and parasitic collector-base capacitance is isolated from the emitter-base capacitance by maintaining the base-collector junction in a reverse biased condition. A bootstrapped driver circuit is also described in which bootstrap current is provided by a transistor-like structure in which an internal load capacitance enables circuit performance to remain substantially constant under various driven load conditions.
摘要翻译：使用传统的双极晶体管技术形成集成电路结电容器。电压可变电容由反向偏置的发射极 - 基极结提供，并且寄生的集电极 - 基极电容通过将基极 - 集电极结保持在反向偏置状态而与发射极 - 基极电容隔离。还描述了自举驱动器电路，其中自举电流由晶体管状结构提供，其中内部负载电容使电路性能在各种驱动负载条件下保持基本上恒定。

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