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    • 5. 发明授权
    • Spinel ferrite thin film and method of manufacturing the same
    • 尖晶石型铁氧体薄膜及其制造方法
    • US06488908B1
    • 2002-12-03
    • US09652011
    • 2000-08-31
    • Tomoji KawaiHitoshi TabataYuji Muraoka
    • Tomoji KawaiHitoshi TabataYuji Muraoka
    • C01G4900
    • H01F41/205C23C14/08C30B23/002C30B23/02C30B29/26G11B7/00
    • A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.
    • 将基板和靶设置在真空室内,真空室内的氧分压设定为1×10 -5以下。 在这种条件下,选自由式AE1 + tFe2-2tTMtO4表示的化合物组成的组的尖晶石铁氧体薄膜,其中AE表示碱土金属或碱金属,TM表示过渡金属,t落在 在0.2和0.6之间,通过激光束沉积在衬底上沉积由式Zn1-xCoxFe2O4表示的化合物,其中x落在0.2和0.7之间的范围内。 具体的方法使得可以提供在大约或高于室温的温度下实现旋转玻璃态的尖晶石铁氧体薄膜,并且能够通过光控制自旋状态。
    • 9. 发明授权
    • Method for producing spin injection electrode
    • 自旋注入电极的制造方法
    • US08778701B2
    • 2014-07-15
    • US13854665
    • 2013-04-01
    • Panasonic Corporation
    • Akihiro OdagawaNozomu Matsukawa
    • H01L21/00
    • H01L43/12H01F10/1936H01F41/205H01F41/30
    • A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.
    • 本公开的制备方法包括:制备多层石墨烯的第一步骤和与石墨烯接触并含有Fe 3 O 4的铁磁材料的氧化铁; 以及在所述石墨烯和所述氧化铁之间施加电压或电流的第二步骤,所述石墨烯的电位相对于所述氧化铁的电位为正,从而氧化所述一部分所述石墨烯或氧化所述石墨烯的一部分 石墨烯和Fe 3 O 4的一部分,从而在石墨烯和氧化铁之间形成由氧化石墨烯或氧化石墨烯和Fe 2 O 3组成的阻挡层,从而形成包括石墨烯,氧化铁和 阻挡层位于石墨烯和氧化铁之间的界面处,并且允许自旋通过阻挡层从氧化铁注入到石墨烯中。
    • 10. 发明申请
    • METHOD FOR PRODUCING SPIN INJECTION ELECTRODE
    • 用于生产旋转注射电极的方法
    • US20130217151A1
    • 2013-08-22
    • US13854665
    • 2013-04-01
    • PANASONIC CORPORATION
    • Akihiro ODAGAWANozomu MATSUKAWA
    • H01L43/12
    • H01L43/12H01F10/1936H01F41/205H01F41/30
    • A production method of the present disclosure includes: a first step of preparing a multi-layer graphene, and an iron oxide that is a ferromagnetic material contacting the graphene and containing Fe3O4; and a second step of applying a voltage or a current between the graphene and the iron oxide with an electric potential of the graphene being positive relative to that of the iron oxide, so as to oxidize a part of the graphene or oxidize a part of the graphene and a part of Fe3O4, and thus to form a barrier layer composed of oxidized graphene or of oxidized graphene and Fe2O3 between the graphene and the iron oxide, and thereby forming a spin injection electrode that includes the graphene, the iron oxide, and the barrier layer located at an interface between the graphene and the iron oxide, and that allows spins to be injected into the graphene from the iron oxide via the barrier layer.
    • 本公开的制备方法包括:制备多层石墨烯的第一步骤和与石墨烯接触并含有Fe 3 O 4的铁磁材料的氧化铁; 以及在所述石墨烯和所述氧化铁之间施加电压或电流的第二步骤,所述石墨烯的电位相对于所述氧化铁的电位为正,从而氧化所述一部分所述石墨烯或氧化所述石墨烯的一部分 石墨烯和Fe 3 O 4的一部分,从而在石墨烯和氧化铁之间形成由氧化石墨烯或氧化石墨烯和Fe 2 O 3组成的阻挡层,从而形成包括石墨烯,氧化铁和 阻挡层位于石墨烯和氧化铁之间的界面处,并且允许自旋通过阻挡层从氧化铁注入到石墨烯中。