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1. 发明授权

US09028984B2 Perpendicular magnetic recording medium 有权
标题翻译：垂直磁记录介质
公开(公告)号：US09028984B2
公开(公告)日：2015-05-12
申请号：US12595805
申请日：2008-04-11
申请人： Yasushi Sakai , Shunji Takenoiri
发明人： Yasushi Sakai , Shunji Takenoiri
IPC分类号： G11B5/667 , G11B5/64 , G11B5/65 , G11B5/73
CPC分类号： G11B5/667 , G11B5/647 , G11B5/65 , G11B5/7325
摘要： A perpendicular magnetic recording medium includes a nonmagnetic substrate, and a soft magnetic layer, a first orientation control layer, a second orientation control layer, a nonmagnetic intermediate layer, a magnetic recording layer, and a protective layer layered sequentially on the nonmagnetic substrate. The first orientation control layer includes a thin film having a face-centered cubic (fcc) structure. The magnetic recording layer includes a thin film layer having ferromagnetic crystal grains and nonmagnetic grain boundaries surrounding the ferromagnetic crystal grains, the ferromagnetic crystal grains including a CoPt alloy having ferromagnetic properties, and the nonmagnetic grain boundaries including an oxide or a nitride. The nonmagnetic intermediate layer includes a thin film containing Ru. The second orientation control layer includes an alloy thin film having an element selected from among Ni and Fe and having the fcc structure, the second orientation control layer having a saturation magnetic flux density Bs of 1 T or lower.
摘要翻译：垂直磁记录介质包括非磁性衬底，以及在非磁性衬底上依次分层的软磁性层，第一取向控制层，第二取向控制层，非磁性中间层，磁记录层和保护层。第一取向控制层包括具有面心立方（fcc）结构的薄膜。磁记录层包括具有铁磁晶粒和包围铁磁晶粒的非磁性晶粒边界的薄膜层，包含具有铁磁特性的CoPt合金的铁磁晶粒和包含氧化物或氮化物的非磁性晶界。非磁性中间层包括含有Ru的薄膜。第二取向控制层包括具有选自Ni和Fe中的元素并具有fcc结构的合金薄膜，第二取向控制层的饱和磁通密度Bs为1T以下。

2. 发明授权

US08900730B2 Method of fabricating graded media 有权
标题翻译：分级介质的制作方法
公开(公告)号：US08900730B2
公开(公告)日：2014-12-02
申请号：US13982987
申请日：2012-01-31
申请人： Charanjit Singh Bhatia , Koashal Kishor Mani Pandey , Nikita Gaur , Siegfried L. Maurer , Ronald W. Nunes
发明人： Charanjit Singh Bhatia , Koashal Kishor Mani Pandey , Nikita Gaur , Siegfried L. Maurer , Ronald W. Nunes
IPC分类号： G11B5/66 , G11B5/64 , G11B5/65
CPC分类号： G11B5/645 , G11B5/647 , G11B5/65
摘要： A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.
摘要翻译：一种磁数据存储介质，包括：具有矫顽磁力或各向异性的连续分级的离子掺杂磁记录层，其中所述矫顽磁力或各向异性基本上在所述磁记录层的一侧处于最小值，并且具有大部分最大矫顽力或各向异性在磁记录层的另一侧。此外，还包括制造磁数据存储介质的方法。

3. 发明申请

US20130034748A1 MAGNETIC RECORDING MEDIUM AND PRODUCTION METHOD OF MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：磁记录介质和磁记录介质的制作方法
公开(公告)号：US20130034748A1
公开(公告)日：2013-02-07
申请号：US13641930
申请日：2011-04-21
申请人： Shunji Ishio , Shun Shibata
发明人： Shunji Ishio , Shun Shibata
IPC分类号： G11B5/65 , G11B5/84
CPC分类号： G11B5/84 , G11B5/647 , G11B5/70615 , G11B5/70626
摘要： The present invention provides: a method of producing, at low temperature, a magnetic recording medium comprising an L10FePt thin film which is highly (001)-oriented and highly L10-ordered; and a magnetic recording medium comprising an L10FePt thin film that can be obtained by this method. In the production method of a magnetic recording medium (10), a thin film formation step S1 of forming a thin film 2 containing an FePt alloy and an oxide of metal having a melting point of 100° C. or more and 500° C. or less is carried out; an annealing step S2 of annealing the thin film 2 to a predetermined temperature is carried out; thereby a magnetic recording layer 2′ containing the FePt alloy having a L10-ordered structure and the oxide of metal is formed. The magnetic recording medium can be obtained by this production method.
摘要翻译：本发明提供一种在低温下制备包含高（001）取向和高L10有序的L10FePt薄膜的磁记录介质的方法; 以及包含可以通过该方法获得的L10FePt薄膜的磁记录介质。在磁记录介质（10）的制造方法中，形成含有FePt合金和熔点为100℃以上且500℃以下的金属的氧化物的薄膜2的薄膜形成工序S1。以下; 执行将薄膜2退火到预定温度的退火步骤S2; 从而形成含有具有L10有序结构的FePt合金和金属氧化物的磁记录层2'。可以通过该制造方法获得磁记录介质。

4. 发明授权

US09899050B2 Multiple layer FePt structure 有权
公开(公告)号：US09899050B2
公开(公告)日：2018-02-20
申请号：US15376043
申请日：2016-12-12
申请人： Seagate Technology LLC
发明人： Jiaoming Qiu , Yonghua Chen , Ganping Ju , Thomas P. Nolan
IPC分类号： G11B5/84 , G11B5/85 , C21D1/26 , B32B15/01 , C22C5/04 , C22F1/14 , C23C14/16 , C23C14/34 , C23C14/35 , C23C14/22 , C23C14/28 , C23C14/58 , G11B5/65 , G11B5/73 , G11B5/851
CPC分类号： G11B5/85 , B32B15/01 , B32B15/017 , B32B15/018 , B32B2307/208 , B32B2307/706 , B32B2457/00 , C21D1/26 , C21D8/12 , C21D9/0068 , C21D2211/004 , C21D2281/02 , C22C5/04 , C22C30/00 , C22C38/002 , C22F1/14 , C23C14/165 , C23C14/221 , C23C14/28 , C23C14/3464 , C23C14/35 , C23C14/5806 , C23C14/5833 , C23C14/5873 , G11B5/647 , G11B5/65 , G11B5/653 , G11B5/66 , G11B5/732 , G11B5/84 , G11B5/851
摘要： One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt

5. 发明申请

US20170092317A1 Multiple Layer FEPT Structure 有权
公开(公告)号：US20170092317A1
公开(公告)日：2017-03-30
申请号：US15376043
申请日：2016-12-12
申请人： Seagate Technology LLC
发明人： Jiaoming Qui , Yonghua Chen , Ganping Ju , Thomas P. Nolan
IPC分类号： G11B5/85 , C22C5/04 , C22F1/14 , C23C14/16 , C23C14/34 , G11B5/851 , C23C14/22 , C23C14/28 , C23C14/58 , G11B5/65 , G11B5/73 , B32B15/01 , C23C14/35
CPC分类号： G11B5/85 , B32B15/01 , B32B15/017 , B32B15/018 , B32B2307/208 , B32B2307/706 , B32B2457/00 , C21D1/26 , C21D8/12 , C21D9/0068 , C21D2211/004 , C21D2281/02 , C22C5/04 , C22C30/00 , C22C38/002 , C22F1/14 , C23C14/165 , C23C14/221 , C23C14/28 , C23C14/3464 , C23C14/35 , C23C14/5806 , C23C14/5833 , C23C14/5873 , G11B5/647 , G11B5/65 , G11B5/653 , G11B5/66 , G11B5/732 , G11B5/84 , G11B5/851
摘要： One embodiment described herein is directed to a method involving depositing a seed layer on a substrate, the seed layer comprising A1 phase FePt with a ratio of Pt of Fe greater than 1:1. A main layer is deposited on the seed layer, the main layer comprising A1 phase FePt with a ratio of Pt to Fe of approximately 1:1. A cap layer is deposited on the main layer, the cap layer comprising A1 phase FePt with a ratio of Pt to Fe of less than 1:1. The seed, main and cap layers are annealed to convert the A1 phase FePt to L10 phase FePt having a graded FePt structure of varying stoichimetry from approximately Fe50Pt50 adjacent a lower portion of the structure proximate the substrate to Fe>50Pt

6. 发明授权

US09418692B2 Method of fabricating graded media 有权
标题翻译：分级介质的制作方法
公开(公告)号：US09418692B2
公开(公告)日：2016-08-16
申请号：US14510580
申请日：2014-10-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , National University of Singapore
发明人： Charanjit Singh Bhatia , Koashal Kishor Mani Pandey , Nikita Gaur , Siegfried L. Maurer , Ronald W. Nunes
IPC分类号： G11B5/66 , G11B5/64 , G11B5/65
CPC分类号： G11B5/645 , G11B5/647 , G11B5/65
摘要： A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.
摘要翻译：磁数据存储介质包括具有矫顽力或各向异性的连续分级的离子掺杂磁记录层。该介质还包括离子掺杂的外涂层，其离子密度基本上在与记录层的界面处最大，并且在外涂层和记录层之间具有连续的离子密度分级。矫顽力基本上在界面处最小。

7. 发明申请

US20140147702A1 Thin Film With Tuned Anisotropy and Magnetic Moment 有权
标题翻译：具有调谐各向异性和磁矩的薄膜
公开(公告)号：US20140147702A1
公开(公告)日：2014-05-29
申请号：US13689409
申请日：2012-11-29
申请人： SEAGATE TECHNOLOGY LLC
发明人： Venkateswara Rao Inturi , Wei Tian , Joseph Mundenar
IPC分类号： G11C11/14 , G11B5/84 , G11B5/64
CPC分类号： G11C11/14 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11B5/647 , G11B5/653 , G11B5/84 , H01F41/22
摘要： An apparatus and associated method are generally described as a thin film exhibiting a tuned anisotropy and magnetic moment. Various embodiments may form a magnetic layer that is tuned to a predetermined anisotropy and magnetic moment through deposition of a material on a substrate cooled to a predetermined substrate temperature.
摘要翻译：通常将装置和相关方法描述为呈现调谐各向异性和磁矩的薄膜。各种实施例可以形成通过将材料沉积在冷却到预定衬底温度的衬底上而被调谐到预定的各向异性和磁矩的磁性层。

8. 发明授权

US09672854B2 Magnetic stack including MgO-Ti(ON) interlayer 有权
公开(公告)号：US09672854B2
公开(公告)日：2017-06-06
申请号：US14068871
申请日：2013-10-31
申请人： Seagate Technology LLC
发明人： Yukiko Kubota , Timothy J. Klemmer , Kai Chieh Chang , Li Gao , Yinfeng Ding , Yingguo Peng , Jan-Ulrich Thiele
IPC分类号： G11B5/66 , G11B5/65 , G11B5/64 , G11B5/851 , G11B5/73
CPC分类号： G11B5/65 , G11B5/647 , G11B5/66 , G11B5/7325 , G11B5/851
摘要： A stack includes a substrate and a magnetic recording layer. Disposed between the substrate and magnetic recording layer is an MgO—Ti(ON) layer.

9. 发明申请

US20150093598A1 MAGNETIC STACK INCLUDING MgO-Ti(ON) INTERLAYER 有权
标题翻译：包含MgO-Ti（ON）中间层的磁性堆叠
公开(公告)号：US20150093598A1
公开(公告)日：2015-04-02
申请号：US14068871
申请日：2013-10-31
申请人： Seagate Technology LLC
发明人： Yukiko Kubota , Timothy J. Klemmer , Kai Chieh Chang , Li Gao , Yinfeng Ding , Yingguo Peng , Jan-Ulrich Thiele
IPC分类号： G11B5/66 , G11B5/851 , G11B5/64
CPC分类号： G11B5/65 , G11B5/647 , G11B5/66 , G11B5/7325 , G11B5/851
摘要： A stack includes a substrate and a magnetic recording layer. Disposed between the substrate and magnetic recording layer is an MgO—Ti(ON) layer.
摘要翻译：堆叠包括基板和磁记录层。设置在基板和磁记录层之间的是MgO-Ti（ON）层。

10. 发明申请

US20130320254A1 METHOD OF FABRICATING GRADED MEDIA 有权
标题翻译：制作分级媒体的方法
公开(公告)号：US20130320254A1
公开(公告)日：2013-12-05
申请号：US13982987
申请日：2012-01-31
申请人： Charanjit Singh Bhatia , Koashal Kishor Mani Pandey , Nikita Gaur , Siegfried L. Maurer , Ronald W. Nunes
发明人： Charanjit Singh Bhatia , Koashal Kishor Mani Pandey , Nikita Gaur , Siegfried L. Maurer , Ronald W. Nunes
IPC分类号： G11B5/64
CPC分类号： G11B5/645 , G11B5/647 , G11B5/65
摘要： A magnetic data storage medium comprising: an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy, wherein the coercivity or anisotropy is at a minimum substantially at one side of the magnetic recording layer, and having substantial portion of maximum coercivity or anisotropy at the other side of the magnetic recording layer. Also, a method of fabricating a magnetic data storage medium is included.
摘要翻译：一种磁数据存储介质，包括：具有矫顽磁力或各向异性的连续分级的离子掺杂磁记录层，其中所述矫顽磁力或各向异性基本上在所述磁记录层的一侧处于最小值，并且具有大部分最大矫顽力或各向异性在磁记录层的另一侧。此外，还包括制造磁数据存储介质的方法。

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