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1. 发明授权

US07596018B2 Spin memory with write pulse 有权
标题翻译：旋转记忆与写入脉冲
公开(公告)号：US07596018B2
公开(公告)日：2009-09-29
申请号：US11929495
申请日：2007-10-30
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/14
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： An electron spin-based memory cell has a first ferromagnetic layer with a changeable magnetization state and a second ferromagnetic layer with a fixed magnetization state. A non-volatile logic state of such cell is dependent on a relationship between said first ferromagnetic layer and said second ferromagnetic layer, including whether said changeable magnetization state and said fixed magnetization state are parallel or antiparallel. To facilitate writing, the cell is adapted carry at least a portion of a write pulse.
摘要翻译：电子自旋基存储单元具有具有可变磁化状态的第一铁磁层和具有固定磁化状态的第二铁磁层。这种单元的非易失性逻辑状态取决于所述第一铁磁层和所述第二铁磁层之间的关系，包括所述可变磁化状态和所述固定磁化状态是平行还是反平行。为了便于写入，单元适于携带写入脉冲的至少一部分。

2. 发明申请

US20090161265A1 Magnetic sensor, magnetic head, and magnetic memory by using spin hall devices 有权
标题翻译：磁性传感器，磁头和磁性存储器
公开(公告)号：US20090161265A1
公开(公告)日：2009-06-25
申请号：US12314769
申请日：2008-12-16
申请人： Ryoko Sugano , Masahiko Ichimura , Hiromasa Takahashi
发明人： Ryoko Sugano , Masahiko Ichimura , Hiromasa Takahashi
IPC分类号： G11B5/127 , G01R33/07
CPC分类号： G11B5/374 , G01R33/1284 , G11B5/378 , G11C11/161 , G11C11/18 , Y10T428/1107
摘要： A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair.
摘要翻译：磁传感器减少热波动，并使用仅配置有一个磁性层的简单结构的旋转霍尔器件来实现高灵敏度信号检测。磁传感器包括层叠非磁性旋转霍尔层，非磁性绝缘体层和磁性层的叠层膜，与非磁性旋转霍尔层的侧面连接的电极非磁性端子对，以及施加电流的单元在层叠膜的膜厚度方向上。非磁性旋转霍尔层的厚度比构成非磁性旋转霍尔层的材料的自旋扩散长度的两倍更薄。由于电极非磁性端子对的两端的电压的极性，检测由外部磁场磁化的磁性层的磁化方向。

3. 发明授权

US07016223B2 Magnetoelectronic memory element with inductively coupled write wires 失效
标题翻译：具有电感耦合写入线的磁电存储元件
公开(公告)号：US07016223B2
公开(公告)日：2006-03-21
申请号：US11120540
申请日：2005-05-02
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/00
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different value. The write circuit uses a pair of inductively coupled write wires in each row and column, which are each given a signal with an amplitude approximately ½ of that required to change the state of the ferromagnetic layer.
摘要翻译：可以将铁磁层的磁化状态设置为对应于要存储在混合存储器件中的数据项的不同值。磁化状态是非易失性的，并且写入电路可以耦合到铁磁层以将磁化状态重置或改变为不同的值。写入电路在每行和列中使用一对电感耦合的写入线，每一行和每列赋予一个信号，其幅度大约为改变铁磁层状态所需的1/2的幅度。

4. 发明授权

US07009875B2 Magnetic memory device structure 有权
标题翻译：磁存储器件结构
公开(公告)号：US07009875B2
公开(公告)日：2006-03-07
申请号：US11133518
申请日：2005-05-19
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/00
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： Ferromagnetic elements for use with spin memories, logic devices and processing circuits include a geometry incorporating an asymmetry about one axis and in some instances one or more curved sections. Magnetic memory elements can be set out in an array such that convex and concave portions are also optimally arranged about magnetization axes.
摘要翻译：用于自旋存储器，逻辑器件和处理电路的铁磁元件包括结合关于一个轴的不对称性的几何形状，并且在一些情况下包括一个或多个弯曲部分。可以将阵列中的磁存储元件设置成使得凸部和凹部也围绕磁化轴优化地布置。

5. 发明申请

US20050169047A1 Magnetic field sensor using spin polarized current 有权
标题翻译：磁场传感器采用自旋极化电流
公开(公告)号：US20050169047A1
公开(公告)日：2005-08-04
申请号：US11091957
申请日：2005-03-28
申请人： Mark Johnson
发明人： Mark Johnson
IPC分类号： G01R33/06 , G11B5/37 , G11C7/00 , G11C11/00 , G11C11/16 , G11C11/18 , G11C11/56 , H01L27/22 , H01L29/66 , H01L43/06 , H03K19/18
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： A hybrid magnetic-semiconductor structure can be used as a magnetic field sensor. The hybrid device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.
摘要翻译：可以使用混合磁半导体结构作为磁场传感器。混合器件使用铁磁材料来实现可变耐旋转电阻。外部磁场可以通过将铁磁层的磁化取向为平行或反平行来改变器件的磁化状态，从而将器件的电阻改变为自旋极化电子的电流。

6. 发明申请

US20050047204A1 Ferromagnetic layer compositions and structures for spin polarized memory device 有权
标题翻译：铁磁层组成和自旋极化记忆装置的结构
公开(公告)号：US20050047204A1
公开(公告)日：2005-03-03
申请号：US10962253
申请日：2004-10-08
申请人： Mark Johnson
发明人： Mark Johnson
IPC分类号： G01R33/06 , G11B5/37 , G11C7/00 , G11C11/00 , G11C11/16 , G11C11/18 , G11C11/56 , H01L27/22 , H01L29/66 , H01L43/06 , H03K19/18
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： Ferromagnetic materials for use with spin memory and logic devices include a geometry and composition adapted to increase spin injection efficiency and/or reduce fringe fields. The ferromagnetic materials can be oriented to implement a variable spin resistance. The ferromagnetic layers are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the “on” state the device has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic layers. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.
摘要翻译：用于自旋存储器和逻辑器件的铁磁材料包括适于增加自旋注入效率和/或减少边缘场的几何形状和组成。铁磁材料可以被定向以实现可变的耐旋转阻力。制造铁磁层以允许器件具有平行和反平行的两个稳定的磁化状态。在“接通”状态下，器件具有由铁磁层的磁化的相对定向决定的两个可设定的稳定的电阻状态。外部磁场可以通过将铁磁层的磁化取向为平行或反平行来改变器件的磁化状态，从而将器件的电阻改变为自旋极化电子的电流。

7. 发明授权

US6117690A Method of making thin, horizontal-plane hall sensors for read-heads in magnetic recording 有权
标题翻译：在磁记录中制作读取头的薄型水平面霍尔传感器的方法
公开(公告)号：US6117690A
公开(公告)日：2000-09-12
申请号：US241124
申请日：1999-02-01
申请人： James Bennett , Stuart A. Solin , Richard A. Stradling , Tineke Thio
发明人： James Bennett , Stuart A. Solin , Richard A. Stradling , Tineke Thio
IPC分类号： G01B7/14 , G11B5/37 , H01L21/00
CPC分类号： G11B5/3993 , H01L43/14 , G11B5/378
摘要： Thin, horizontal-plane Hall sensors for read-head in magnetic recordings and methods for fabricating the sensor provide a novel sensor exhibiting high sensitivity and high spatial resolution.
摘要翻译：用于磁记录中读头的薄型水平面霍尔传感器和用于制造传感器的方法提供了一种具有高灵敏度和高空间分辨率的新型传感器。

8. 发明授权

US5654566A Magnetic spin injected field effect transistor and method of operation 失效
公开(公告)号：US5654566A
公开(公告)日：1997-08-05
申请号：US643804
申请日：1996-05-06
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11B5/37 , G11C11/16 , G11C11/18 , G11C11/56 , H01L29/66 , H01L43/06 , H03K19/18 , H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , G11C11/18 , G11C11/5607 , H01L29/66984 , H03K19/168 , H03K19/18 , G11B5/378
摘要： A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic applications for performing digital combinational tasks, or a magnetic field sensor. The hybrid FET uses ferromagnetic materials for the source and drain, and like a conventional FET, has two operating states determined by a gate voltage, "off" and "on". The ferromagnetic layers of the hybrid FET are fabricated to permit the device to have two stable magnetization states, parallel and antiparallel. In the "on" state the spin injected FET has two settable, stable resistance states determined by the relative orientation of the magnetizations of the ferromagnetic source and drain. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the drain to be parallel or antiparallel with that of the source, thus changing the resistance of the device to a current of spin polarized electrons injected into the source and flowing to the drain through the channel under the gate. The new FET can be used as a memory cell because the drain magnetization is non-volatile, and can represent a binary data value to be stored in the cell. A conductive write line can be used for inductively coupling an input magnetic field (representing a data value to be stored in the device) with the drain magnetization to alter the orientation state of the latter. An array of spin injected FETs can be coupled together in an array to form a new hybrid FET memory array. The new FET can also be used as a logic gate that stores the result of a boolean function. A magnetic field generated by the combined current of one or more input data signals is coupled to the spin injected FET. Depending on the particular function to be implemented, the ferromagnetic drain magnetization can be configured to change or retain its orientation based on particular predefined combinations of input data signals.

9. 发明授权

US5093753A Magnetic reading head using the hall effect 失效
标题翻译：磁性读取头使用霍尔效应
公开(公告)号：US5093753A
公开(公告)日：1992-03-03
申请号：US535900
申请日：1990-06-11
申请人： Alain Friederich , Gerard Creuzet
发明人： Alain Friederich , Gerard Creuzet
IPC分类号： G11B5/37 , H01L43/06
CPC分类号： H01L43/065 , G11B5/378
摘要： Disclosed is a magnetic reading head using the Hall effect. In this head, the active element comprises a substrate on which the following are epitaxially grown: a layer of a semiconductor material with high electron mobility and a magnetic metallic multilayer formed by stacked layers of magnetic materials and non-magnetic materials, the layer of semiconductor material and the multilayer being electrically insulated from each other. This head also has electrodes for current supply and Hall voltage detection that are in contact with the layer of semiconductor material. The disclosed device can be applied to the reading of magnetic recording media.
摘要翻译：公开了使用霍尔效应的磁读头。在该磁头中，有源元件包括其上外延生长以下的衬底：具有高电子迁移率的半导体材料层和由磁性材料和非磁性材料层叠形成的磁性金属多层，半导体层材料，并且多层彼此电绝缘。该头还具有与半导体材料层接触的用于电流供应和霍尔电压检测的电极。所公开的装置可以应用于磁记录介质的读取。

10. 发明授权

US3715522A Multi-track magnetic hall head 失效
标题翻译：多轨磁性球头
公开(公告)号：US3715522A
公开(公告)日：1973-02-06
申请号：US3715522D
申请日：1970-07-29
申请人： PIONEER ELECTRONIC CORP
发明人： TSUKAGOSHI T
IPC分类号： G11B5/37 , G11B5/49 , G11B5/38
CPC分类号： G11B5/378 , G11B5/37 , G11B5/4969
摘要： A multi-track magnetic head comprising a plurality of threeterminal T-type Hall elements each having one Hall potential terminal and two current terminals provided at both ends thereof, said Hall elements being arranged at positions aligned with a corresponding number of tracks provided on a magnetic tape to be reproduced, an electric power source supplying electric currents only to a selected number of Hall elements aligned with the tracks to be reproduced simultaneously, a common terminal provided on a balancing resistor connected across the power source, and a capacitor for adjusting the impedance of the power source so that the ratio between the impedance of each Hall element to the impedance of the power source is selected to be more than 100 in general cases and to be more than 10 when a stereophonic reproduction is undertaken.
摘要翻译：一种多轨磁头，包括多个三端T型霍尔元件，每个具有一个霍尔电位端子和设置在其两端的两个电流端子，所述霍尔元件布置在与设置在其上的相应数量的轨道对准的位置要再现的磁带，仅向选定数量的霍尔元件提供电流的电源，该选择数量的霍尔元件与要同时再现的磁道对准，设置在跨过电源的平衡电阻器上设置的公共端子和用于调节的电容器电源的阻抗使得在一般情况下，每个霍尔元件的阻抗与电源的阻抗之间的比率被选择为大于100，并且当进行立体声再现时大于10。

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