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1. 发明申请

US20190154611A1 MICROSENSOR CHEMICAL DETECTION MIXTURE 审中-公开
公开(公告)号：US20190154611A1
公开(公告)日：2019-05-23
申请号：US16196629
申请日：2018-11-20
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G01N27/12
摘要： A chemical detection mixture includes microsensor elements adapted to detect target chemical and/or target environmental conditions. The microsensor elements can be incorporated within liquid and dry mixtures, including compounds of inks, dyes, print powders, aerosols and other suspensions.

2. 发明授权

US09754997B2 Magnetic tunnel junction based reconfigurable processing system and components 有权
公开(公告)号：US09754997B2
公开(公告)日：2017-09-05
申请号：US15290200
申请日：2016-10-11
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/18 , H01L27/22 , H01L43/02 , H01L43/08 , G11C11/16
CPC分类号： G11C11/1675 , G11C11/1673 , G11C11/18 , H01L43/08 , H03K17/90 , H03K19/017581 , H03K19/1776 , H03K19/18
摘要： Resistance elements, including Magnetic Tunnel Junction devices are configured as magnetoelectronic (ME) devices. These resistive devices are useable as circuit building blocks in reconfigurable processing systems, including as logic circuits, non-volatile switches and memory cells.

3. 发明申请

US20160373114A1 Reconfigurable Magnetoelectronic Processing Circuits 审中-公开
标题翻译：可重构磁电加工电路
公开(公告)号：US20160373114A1
公开(公告)日：2016-12-22
申请号：US15250784
申请日：2016-08-29
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： H03K19/177 , H03K19/0175 , G11C11/16
CPC分类号： H03K19/1776 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693 , H03K17/90 , H03K19/017581
摘要： Magnetoelectronic circuits include Hybrid Hall Effect devices implemented with Spin Transfer Torque write capability. The circuits include reconfigurable processing systems, logic circuits, non-volatile switches, memory cells, etc.
摘要翻译：磁电子电路包括采用旋转转矩写入能力实现的混合霍尔效应器件。电路包括可重构处理系统，逻辑电路，非易失性开关，存储单元等。

4. 发明申请

US20160020769A1 Reconfigurable Magnetoelectronic Processing System 有权
标题翻译：可重构磁电加工系统
公开(公告)号：US20160020769A1
公开(公告)日：2016-01-21
申请号：US14703006
申请日：2015-05-04
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： H03K19/0175 , H03K19/177
CPC分类号： H03K19/017581 , H03K19/1776
摘要： Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed for use in energy constrained applications in which logic operations are carried out using a minimal number of physical operations. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc. including in clockless applications.
摘要翻译：公开了用于能量约束应用中的电磁（ME）逻辑电路及其操作方法，其中使用最少数量的物理操作进行逻辑运算。由不同类型的ME设备制成的不同电路的微系统可以构建并应用于诸如传感器，智能灰尘等应用中，包括在无时钟应用中。

5. 发明申请

US20150137200A1 Hybrid Domain Wall-Hall Cross Device 有权
标题翻译：混合域墙霍尔交叉设备
公开(公告)号：US20150137200A1
公开(公告)日：2015-05-21
申请号：US14536872
申请日：2014-11-10
申请人： Mark B. Johnson , Christopher Malec
发明人： Mark B. Johnson , Christopher Malec
IPC分类号： H01L43/06 , H01L29/20 , H01L29/18
CPC分类号： H01L43/065 , G11C11/161 , G11C11/1675 , G11C11/18 , H01L43/04
摘要： A hybrid domain wall Hall cross device consists of a semiconductor Hall cross having a top surface and a pair of arms intersecting at a center region, and a ferromagnetic wire fabricated on the top surface, electrically isolated from the Hall cross, and having a constriction proximate to the center of the Hall cross. The device provides a magnetoelectronic MRAM storage cell with improved performance characteristics. Binary storage is associated with a trapped domain wall having one of two stable orientations. The bit state can be written using current driven domain wall motion. This is a STT process in which the write current is applied to a thin film, low impedance wire. Heating is minimized and no wear-out mechanism is known to exist.
摘要翻译：混合域壁霍尔交叉装置由具有上表面和一对在中心区域相交的一对臂的半导体霍尔交叉构成，并且在顶表面上制造的铁磁线与霍尔交叉电隔离，并且具有接近的收缩到霍尔中心的十字架。该器件提供具有改进的性能特性的磁电子MRAM存储单元。二元存储与具有两个稳定取向之一的被捕获的畴壁相关联。位状态可以使用当前的驱动域壁运动来写入。这是一种STT过程，其中写入电流被施加到薄膜，低阻抗线。加热最小化，并且不知道存在磨损机制。

6. 发明申请

US20140176184A1 Nonvolatile Logic Circuit Architecture & Method of Operation 有权
标题翻译：非易失性逻辑电路架构与操作方法
公开(公告)号：US20140176184A1
公开(公告)日：2014-06-26
申请号：US14133055
申请日：2013-12-18
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： H03K19/0175
CPC分类号： H03K19/017581 , H03K19/1776
摘要： Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.
摘要翻译：公开了磁电（ME）逻辑电路及其操作方法。由不同类型的ME设备制成的不同电路的微系统可以在诸如传感器，智能灰尘等的应用中被构建和使用。

7. 发明授权

US08482841B1 Magnetic spin based photonic/plasmonic devices 有权
标题翻译：基于磁自旋的光子/等离子体元件
公开(公告)号：US08482841B1
公开(公告)日：2013-07-09
申请号：US13153261
申请日：2011-06-03
申请人： Mark B Johnson , Abdulhakem Elezzabi , Kenneth J. Chau
发明人： Mark B Johnson , Abdulhakem Elezzabi , Kenneth J. Chau
IPC分类号： G02F1/09
CPC分类号： G02F1/09 , B82Y20/00 , G02B6/1226 , G02F3/00 , G02F2203/10 , G02F2203/16
摘要： A photonic/plasmonic device is disclosed that uses a ferroelectric material and its magnetization state in order to affect the physical properties of electromagnetic waves. The magnetization state of the ferromagnetic material may either be zero or nonzero. When the magnetization state of the ferromagnetic material is non-zero physical properties of the electromagnetic waves are altered. This effect can be used to make switches and the like.
摘要翻译：公开了一种使用铁电材料及其磁化状态以便影响电磁波的物理性质的光子/等离子体元件。铁磁材料的磁化状态可以是零或非零。当铁磁材料的磁化状态为非零时，电磁波的物理特性被改变。这种效果可用于制作开关等。

8. 发明授权

US07978394B1 Magnetic spin based photonic/plasmonic devices 有权
标题翻译：基于磁自旋的光子/等离子体元件
公开(公告)号：US07978394B1
公开(公告)日：2011-07-12
申请号：US12405756
申请日：2009-03-17
申请人： Mark B Johnson , Abdulhakem Elezzabi , Kenneth J. Chau
发明人： Mark B Johnson , Abdulhakem Elezzabi , Kenneth J. Chau
IPC分类号： G02F1/09
CPC分类号： G02F1/09 , B82Y20/00 , G02B6/1226 , G02F3/00 , G02F2203/10 , G02F2203/16
摘要： A photonic/plasmonic device is disclosed that uses a ferroelectric material and its magnetization state in order to affect the physical properties of electromagnetic waves. The magnetization state of the ferromagnetic material may either be zero or nonzero. When the magnetization state of the ferromagnetic material is non-zero physical properties of the electromagnetic waves are altered. This effect can be used to make switches and the like.
摘要翻译：公开了一种使用铁电材料及其磁化状态以便影响电磁波的物理性质的光子/等离子体元件。铁磁材料的磁化状态可以是零或非零。当铁磁材料的磁化状态为非零时，电磁波的物理特性被改变。这种效果可用于制作开关等。

9. 发明授权

US07193891B2 Spin based sensor device 有权
标题翻译：旋转传感器装置
公开(公告)号：US07193891B2
公开(公告)日：2007-03-20
申请号：US11369661
申请日：2006-03-06
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/00
CPC分类号： H01L43/06 , G01R33/06 , G01R33/1284 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L27/222 , H01L27/224 , H01L27/228 , H01L29/66984 , H03K19/18
摘要： A spin based electronic device can be used as a magnetic field sensor. The device uses ferromagnetic materials for implementing a variable spin resistance. An external magnetic field can change the magnetization state of the device by orienting the magnetization of the ferromagnetic layers to be parallel or antiparallel, thus changing the resistance of the device to a current of spin polarized electrons.
摘要翻译：基于旋转的电子装置可以用作磁场传感器。该装置使用铁磁材料来实现可变的耐旋转电阻。外部磁场可以通过将铁磁层的磁化取向为平行或反平行来改变器件的磁化状态，从而将器件的电阻改变为自旋极化电子的电流。

10. 发明授权

US07050329B2 Magnetic spin based memory with inductive write lines 有权
标题翻译：具有感应写入线的磁自旋基存储器
公开(公告)号：US07050329B2
公开(公告)日：2006-05-23
申请号：US10962252
申请日：2004-10-08
申请人： Mark B. Johnson
发明人： Mark B. Johnson
IPC分类号： G11C11/18
CPC分类号： H01L27/226 , G11B5/378 , G11C11/16 , G11C11/18 , G11C11/5607 , H01L29/66984 , H03K19/18
摘要： A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin storage element which is written using inductive write lines. The magnetic spin storage element is an electron spin-based memory element situated on a silicon based substrate and includes a first ferromagnetic layer with a changeable magnetization state, and a second ferromagnetic layer with a non-changeable magnetization state. A current of spin polarized electrons has a magnitude which can be varied so that a data value can be stored in the memory element by varying a relative orientation of the two ferromagnetic layers using a magnetic field imposed by the inductive write lines.
摘要翻译：提供了一种新的非易失性混合存储单元。电池由使用感应写入线写入的磁性自旋存储元件组成。磁性自旋存储元件是位于硅基衬底上的电子自旋基存储元件，包括具有可变磁化状态的第一铁磁层和具有不可变化磁化状态的第二铁磁层。自旋极化电子的电流具有可以变化的大小，使得可以通过使用由感应写入线施加的磁场改变两个铁磁层的相对取向来将数据值存储在存储元件中。

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