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    • 3. 发明授权
    • Etching gas
    • 蚀刻气体
    • US09234133B2
    • 2016-01-12
    • US14455128
    • 2014-08-08
    • Central Glass Company, Limited
    • Naoto TakadaIsamu Mori
    • H01L21/302C09K13/00H01L21/3065C07C53/48H01L21/311C23F1/12
    • C09K13/00C07C53/48C23F1/12H01L21/3065H01L21/31116
    • Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr and the like, from CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HI, HBr, HCl, CO, NO, NH3, H2 and the like, or from CH4, CH3F, CH2F2 and CHF3. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF4 that places a burden on the environment.
    • 公开了提供含有CHF 2 COF的蚀刻气体。 蚀刻气体可以含有选自O 2,O 3,CO,CO 2,F 2,NF 3,Cl 2,Br 2,I 2,X F n中的至少一种气体作为添加剂(在该式中,X表示Cl,I或Br。 n表示从CH 4,C 2 H 2,C 2 H 4,C 2 H 6,C 3 H 4,C 3 H 6,C 3 H 8,H 1,CH 3,CH 3,CH 3,CH 3,CH 3, ,HBr,HCl,CO,NO,NH3,H2等,或来自CH4,CH3F,CH2F2和CHF3。 该蚀刻气体不仅具有优异的蚀刻性能,例如抗蚀剂的选择比和图案形貌,而且易于获得,并且基本上不产生对环境造成负担的CF4。