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1. 发明授权

US09627193B2 Organoaminodisilane precursors and methods for depositing films comprising same 有权
公开(公告)号：US09627193B2
公开(公告)日：2017-04-18
申请号：US14511719
申请日：2014-10-10
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Steven Gerard Mayorga , Heather Regina Bowen , Xinjian Lei , Manchao Xiao , Haripin Chandra , Anupama Mallikarjunan , Ronald Martin Pearlstein
IPC分类号： C07F7/02 , H01L21/02 , C09D1/00 , C07F7/10 , C23C16/18 , C23C16/40 , C23C16/455 , C23C16/46
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

2. 发明授权

US5573689A Fluidized bed reactor for preparing metal nitride 失效
标题翻译：用于制备金属氮化物的流化床反应器
公开(公告)号：US5573689A
公开(公告)日：1996-11-12
申请号：US594156
申请日：1996-01-31
申请人： Hirofumi Fukuoka , Yoshiharu Konya , Masanori Fukuhira , Ichiro Ishizaka
发明人： Hirofumi Fukuoka , Yoshiharu Konya , Masanori Fukuhira , Ichiro Ishizaka
IPC分类号： B01J8/18 , B01J8/24 , C01B21/06 , C01B21/064 , C01B21/068 , C01B21/072 , C04B35/584 , F27B15/00 , F27B5/14
CPC分类号： C04B35/584 , B01J8/1836 , B01J8/1872 , C01B21/06 , C01B21/0641 , C01B21/0682 , C01B21/0722
摘要： In a fluidized bed reactor for preparing a metal nitride by feeding metal powder and a non-oxidizing gas containing N.sub.2 or NH.sub.3 into a reaction tube (1) to form a fluidized bed (2) therein and heating the fluidized bed for nitriding the metal powder, an envelope (11) encloses the reaction tube (1) for preventing the surrounding air from entering the reaction tube. A heater (9) is disposed outside the envelope (11) for heating the fluidized bed (2) to 1,200.degree. C. or higher. The envelope prevents penetration of the surrounding air into the reaction tube and also prevents deterioration of the heater and surrounding components by scattering of metal fines. The reactor ensures safe operation to prepare metal nitride powder of high purity on an industrial scale.
摘要翻译：在用于通过将金属粉末和含有N 2或NH 3的非氧化气体进料到反应管（1）中以在其中形成流化床（2）而制备金属氮化物的流化床反应器中，并加热流化床以使金属粉末渗氮，封套（11）包围用于防止周围空气进入反应管的反应管（1）。将加热器（9）设置在用于将流化床（2）加热到1200℃以上的外壳（11）的外侧。外壳防止周围空气渗透到反应管中，并且还防止加热器和周围部件由于金属细粉的散射而变质。反应器确保安全操作，以工业规模制备高纯度的金属氮化物粉末。

3. 发明授权

US5232677A Preparation of silicon nitride powder by partially nitriding in a fluidized bed and then completing nitridation in a moving bed 失效
标题翻译：通过在流化床中部分硝化制备氮化硅粉末，然后在移动床中完成氮化
公开(公告)号：US5232677A
公开(公告)日：1993-08-03
申请号：US647142
申请日：1991-01-29
申请人： Hirofumi Fukuoka , Mutsuo Shimizu , Hidemitsu Ochiai , Hideaki Shimizu , Masanori Fukuhira
发明人： Hirofumi Fukuoka , Mutsuo Shimizu , Hidemitsu Ochiai , Hideaki Shimizu , Masanori Fukuhira
IPC分类号： C01B21/068
CPC分类号： C01B21/0682
摘要： Silicon nitride powder is produced in two steps, by supplying metallic silicon powder to a fluidized bed composed of silicon nitride and nitrogen or ammonia gas where primary nitriding reaction is effected until the silicon powder is nitrided to an amount of at least 50% and transferring the nitrided product from the fluidized bed into a moving bed where secondary nitriding reaction is effected for nitriding the unreacted silicon with nitrogen or ammonia gas. This method is adapted for manufacture on a commercial scale because the silicon nitride powder thus obtained is consistent and has a very high degree of nitriding and a minimal variation in quality.

4. 发明授权

US4935214A Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants 失效
标题翻译：通过元素硅和氮 - 氢液体反应物之间的直接反应生产高纯度氮化硅的方法
公开(公告)号：US4935214A
公开(公告)日：1990-06-19
申请号：US380695
申请日：1989-07-14
申请人： Eloise A. Pugar , Peter E. D. Morgan
发明人： Eloise A. Pugar , Peter E. D. Morgan
IPC分类号： C01B21/068 , C01B21/087
CPC分类号： C01B21/087 , C01B21/0682 , C01P2006/80
摘要： A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.
摘要翻译：公开了一种在低温下生产基本上由硅，氮和氢组成的高纯度反应产物的方法，然后可以将其加热产生高纯度的α氮化硅。该方法包括：将颗粒状元素高纯度硅与其液态的高纯度氮 - 氢反应物（例如氨或肼）反应，其具有下式：NnH（n + m）其中：n = 1-4和m 当氮 - 氢反应物为直链时为= 2，当氮 - 氢反应物为环状时为0。通过在约1200-170℃的温度下加热中间产物约15分钟至约2小时的时间，可以从该中间产物形成高纯氮化硅以形成高纯度的氮化硅产物。发现可溶性Si-N-H中间体的存在使得以前在硅 - 氮陶瓷的常规固态方法中无法探索化学途径。

5. 发明授权

US4687606A Metalloid precursor powder and method of making same 失效
标题翻译：准金属前体粉末及其制备方法
公开(公告)号：US4687606A
公开(公告)日：1987-08-18
申请号：US660759
申请日：1984-10-15
申请人： Gary M. Crosbie
发明人： Gary M. Crosbie
IPC分类号： C01B33/00 , B22F9/10 , C01B21/068 , C01B33/02 , C04B35/584 , B22D23/08
CPC分类号： C01B21/0682 , C01B33/02 , C04B35/584 , C01P2004/03 , C01P2004/61
摘要： A method of making a metalloid precursor powder is disclosed, which powder avoids impurity localization and is effective to produce an improved fine grained ceramic body. A metalloid melt is formed and rapidly solidified into particles having a particle size distribution of 2-50 microns; the particles are cooled at a rate to distribute impurities or additive metal ingredients substantially uniformly throughout the solidifed particles with spacing between localizations being substantially in the range of 1-25 microns and the size of each localization being one micron or less. The cooling rate is preferably equal to or greater than 10.sup.5 .degree. C./second.
摘要翻译：公开了一种制备准金属前体粉末的方法，该粉末避免了杂质定位，并且有效地生产了改进的细粒陶瓷体。形成准金属熔体并迅速固化成粒度分布为2-50微米的颗粒; 颗粒以一定的速率冷却，以将杂质或添加金属成分基本均匀地分布在整个固化颗粒中，定位之间的间隔基本上在1-25微米的范围内，每个定位的尺寸为1微米或更小。冷却速度优选为等于或大于105℃/秒。

6. 发明授权

US4414190A Method of preparing silicon nitride 失效
标题翻译：制备氮化硅的方法
公开(公告)号：US4414190A
公开(公告)日：1983-11-08
申请号：US358433
申请日：1982-03-15
申请人： Motoo Seimiya , Katsutoshi Nishida
发明人： Motoo Seimiya , Katsutoshi Nishida
IPC分类号： C01B21/068 , C01B21/06
CPC分类号： C01B21/0685 , C01B21/0682
摘要： A method of producing silicon nitride which comprises heating wet process white carbon in the presence of a carbon source and a source of nitrogen.
摘要翻译：一种生产氮化硅的方法，包括在碳源和氮源的存在下加热湿法白碳。

7. 发明授权

US3677713A Furnace for the manufacture of ceramic whiskers 失效
标题翻译：陶瓷制造商的炉子
公开(公告)号：US3677713A
公开(公告)日：1972-07-18
申请号：US3677713D
申请日：1970-11-27
申请人： SECR DEFENCE BRIT
发明人： EVANS CHRISTOPHER CHARLES
IPC分类号： C01B21/068 , C30B25/00 , B01J17/28
CPC分类号： C01B21/0685 , C01B21/068 , C01B21/0682 , C01P2004/10 , C01P2004/54 , C01P2004/61 , C01P2006/10 , C30B25/005 , C30B29/38 , Y10T117/102
摘要： A FURNACE PARTICULARLY SUITABLE FOR THE MANUFACTURE OF CERAMIC MATERIALS IN WHISKER FORM COMPRISED A HOLLOW CASING LINED INTERNALLY WITH THERMALLY INSULATING MATERIAL AND ENCLOSING A REACTION SPACE, A CARBON ELECTRODE DISPOSED WITHIN THE CASING AND CAPABLE OF HEATING SAID REACTION SPACE TO A HIGH TEMPERATURE, AT LEAST ONE CONTAINER FOR CONTAINING A SOLID CHEMICAL REACTANT PROVIDED WITHIN THE CASING AND HAVING AN OPENING INTO SAID REACTION SPACE, MEANS FOR PASSING GAS FORM A SOURCE OUTSIDE THE CASING THROUGH THE SAID CONTAINER AND INTO SAID REACTION SPACE, MEANS FOR PASSING GAS DIRECTLY INTO SAID REACTION SPACE AND MEANS FOR REMOVING GAS FROM SAID REACTION SPACE.

8. 发明申请

US20170186605A1 Methods for Depositing Films with Organoaminodisilane Precursors 有权
公开(公告)号：US20170186605A1
公开(公告)日：2017-06-29
申请号：US15459389
申请日：2017-03-15
申请人： VERSUM MATERIALS US, LLC
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： H01L21/02 , C09D7/00 , C23C16/455 , C01B33/12 , C07F7/10 , C23C16/34 , C09D1/00 , C01B33/021
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

9. 发明授权

US09337018B2 Methods for depositing films with organoaminodisilane precursors 有权
标题翻译：用有机氨基二硅烷前体沉积薄膜的方法
公开(公告)号：US09337018B2
公开(公告)日：2016-05-10
申请号：US13902300
申请日：2013-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： C23C16/40 , H01L21/02 , C09D1/00 , C07F7/10 , C23C16/18 , C23C16/455 , C23C16/46
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
摘要翻译：一种通过选自化学气相沉积工艺和原子层沉积工艺的沉积工艺在衬底的至少一个表面上形成含硅膜的方法，该方法包括：将衬底的至少一个表面设置在反应室; 引入至少一种包含由下式I表示的Si-N键，Si-Si键和Si-H3族的有机基二硅烷前体：其中R1和R2如本文所定义; 并将含氮源引入所述反应器中，其中所述至少一种有机氨基二硅烷前体和所述含氮源在所述至少一个表面上反应形成所述膜。

10. 发明申请

US20130323435A1 ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME 有权
标题翻译：有机阴离子表面活性剂和沉积膜的方法
公开(公告)号：US20130323435A1
公开(公告)日：2013-12-05
申请号：US13902300
申请日：2013-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： C09D1/00
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
摘要翻译：这里描述的是用于形成含硅膜的前体和方法。一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

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