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1. 发明公开

US20240140798A1 METHOD FOR PREPARING SILICON NITRIDE POWDER FOR MANUFACTURING SUBSTRATE AND SILICON NITRIDE POWDER PREPARED THEREBY 审中-公开
公开(公告)号：US20240140798A1
公开(公告)日：2024-05-02
申请号：US18550924
申请日：2022-03-18
申请人： AMOTECH CO., LTD.
发明人： Kyu Hwan PARK , Hun CHEONG
IPC分类号： C01B21/068
CPC分类号： C01B21/0682 , C01B21/0687 , C01P2004/62 , C01P2006/32 , C01P2006/40
摘要： Provided is a method for preparing silicon nitride powder for manufacturing a substrate. The method for preparing silicon nitride powder for manufacturing a substrate, according to an embodiment of the present invention, comprises the steps of: preparing mixed raw material powder comprising metallic silicon powder and crystalline phase control powder; preparing the mixed raw material powder into granules having a predetermined particle size; nitrifying the granules at a predetermined temperature ranging from 1,200-1,500° C. while nitrogen gas is applied to the granules at a predetermined pressure; and pulverizing the nitrified granules. According to the method, it is easy to realize powder having an α crystal phase at a desired level, and when this is realized as a substrate, a substrate having compact density can be manufactured.

2. 发明申请

US20170186605A1 Methods for Depositing Films with Organoaminodisilane Precursors 有权
公开(公告)号：US20170186605A1
公开(公告)日：2017-06-29
申请号：US15459389
申请日：2017-03-15
申请人： VERSUM MATERIALS US, LLC
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： H01L21/02 , C09D7/00 , C23C16/455 , C01B33/12 , C07F7/10 , C23C16/34 , C09D1/00 , C01B33/021
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

3. 发明授权

US09337018B2 Methods for depositing films with organoaminodisilane precursors 有权
标题翻译：用有机氨基二硅烷前体沉积薄膜的方法
公开(公告)号：US09337018B2
公开(公告)日：2016-05-10
申请号：US13902300
申请日：2013-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： C23C16/40 , H01L21/02 , C09D1/00 , C07F7/10 , C23C16/18 , C23C16/455 , C23C16/46
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
摘要翻译：一种通过选自化学气相沉积工艺和原子层沉积工艺的沉积工艺在衬底的至少一个表面上形成含硅膜的方法，该方法包括：将衬底的至少一个表面设置在反应室; 引入至少一种包含由下式I表示的Si-N键，Si-Si键和Si-H3族的有机基二硅烷前体：其中R1和R2如本文所定义; 并将含氮源引入所述反应器中，其中所述至少一种有机氨基二硅烷前体和所述含氮源在所述至少一个表面上反应形成所述膜。

4. 发明申请

US20130323435A1 ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME 有权
标题翻译：有机阴离子表面活性剂和沉积膜的方法
公开(公告)号：US20130323435A1
公开(公告)日：2013-12-05
申请号：US13902300
申请日：2013-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： C09D1/00
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
摘要翻译：这里描述的是用于形成含硅膜的前体和方法。一方面，提供了式I的前体：其中R 1选自直链或支链C 3至C 10烷基，直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 1至C 6二烷基氨基吸电子基团和C6〜C10芳基; R 2选自氢，直链或支链C 1至C 10烷基，直链或支链C 3至C 6烯基，直链或支链C 3至C 6炔基，C 1至C 6二烷基氨基，C 6至C 10芳基，直链或支链C 1至 C6氟化烷基，吸电子基和C4〜C10芳基; 任选地，其中R 1和R 2连接在一起形成选自取代或未取代的芳族环或取代或未取代的脂族环的环; n = 1或2。

5. 发明申请

US20110182721A1 SEALING ARRANGEMENT FOR A GAS TURBINE ENGINE 审中-公开
标题翻译：密封涡轮发动机的密封装置
公开(公告)号：US20110182721A1
公开(公告)日：2011-07-28
申请号：US13010329
申请日：2011-01-20
申请人： Duncan SAUNDERS
发明人： Duncan SAUNDERS
IPC分类号： F01D11/08
CPC分类号： C01B21/0682 , F01D9/042 , F01D11/001 , F05D2230/25 , F05D2230/90 , F05D2240/57 , F16J15/3292
摘要： The present invention relates to a sealing arrangement between a stator assembly and a rotor 12 of a gas turbine engine, the rotor 12 being rotatable about an engine axis, the stator assembly comprising vanes 22 provided at their radially inner ends with a vane support structure 28 which comprises an annular platform 30 supporting the vanes and a radial flange 32 which extends radially inwardly from the platform, the sealing arrangement comprising an array of leaves 36 which extend inwardly from the radially inner periphery of the flange 32, towards a circumferential sealing surface 13 of the rotor 12.
摘要翻译：本发明涉及定子组件和燃气涡轮发动机的转子12之间的密封装置，转子12可围绕发动机轴线旋转，该定子组件包括在其径向内端设有叶片支承结构28的叶片22 其包括支撑叶片的环形平台30和从平台径向向内延伸的径向凸缘32，该密封装置包括从凸缘32的径向内周向内延伸的圆周密封表面13 的转子12。

6. 发明授权

US5453407A Method for producing nitride ceramic powders 失效
标题翻译：氮化物陶瓷粉末的制造方法
公开(公告)号：US5453407A
公开(公告)日：1995-09-26
申请号：US196287
申请日：1994-02-14
申请人： Shyau L. Chung , Wei-Chang Lee
发明人： Shyau L. Chung , Wei-Chang Lee
IPC分类号： C01B21/06 , C01B21/068 , C01B21/076 , C04B35/58 , C04B35/584
CPC分类号： C01B21/0765 , C01B21/06 , C01B21/0602 , C01B21/0682
摘要： A method for producing nitride ceramic powders includes steps of a) providing a powder, b) providing a nitride, c) providing a salt of ammonium halide, d) mixing the powder, the nitride, and the salt to form a reactant, e) wrapping up the reactant with an igniting agent, f) placing the reactant wrapped up with the igniting agent in a vessel, g) evacuating the vessel, h) igniting the igniting agent for initiating a combustion reaction to form the nitride ceramic powders. Such method can permit excellent nitride ceramic powders to be effectively produced.
摘要翻译：一种生产氮化物陶瓷粉末的方法包括以下步骤：a）提供粉末，b）提供氮化物，c）提供卤化铵盐，d）将粉末，氮化物和盐混合以形成反应物，e）用点火剂包裹反应物，f）将用点燃剂包裹的反应物放置在容器中，g）抽空容器，h）点燃点火剂以引发燃烧反应以形成氮化物陶瓷粉末。这种方法可以有效地制备优质的氮化物陶瓷粉末。

7. 发明授权

US5073358A Preparation of silicon nitride powder 失效
标题翻译：硅酸钠粉末的制备
公开(公告)号：US5073358A
公开(公告)日：1991-12-17
申请号：US557572
申请日：1990-07-24
申请人： Mutsuo Shimizu , Hirofumi Fukuoka , Masanori Fukuhira
发明人： Mutsuo Shimizu , Hirofumi Fukuoka , Masanori Fukuhira
IPC分类号： C01B21/068
CPC分类号： C01B21/0682
摘要： Silicon nitride powder is prepared by continuously supplying metallic silicon powder to a first fluidized bed which is composed of silicon nitride powder and a non-oxidizing reaction gas containing nitrogen or ammonia gas and maintained at 1,000.degree. to 1,400.degree. C. where primary nitriding reaction takes place, and continuously withdrawing the nitride product from the first fluidized bed and supplying it to a second fluidized bed of similar composition where secondary nitriding reaction takes place for nitriding the unreacted metallic silicon powder.

8. 发明授权

US3692474A Preparation of metal nitrides 失效
标题翻译：金属氮化物的制备
公开(公告)号：US3692474A
公开(公告)日：1972-09-19
申请号：US3692474D
申请日：1970-11-03
申请人： UNITED STATES BORAX CHEM
发明人： ARBER SCOTT GORDON , YOUNG OSWALD WILLIAM JOHN
IPC分类号： C01B21/06 , C01B21/064 , C01B21/068 , C01B21/072 , C01B21/076 , C01F7/00
CPC分类号： C01B21/0682 , C01B21/06 , C01B21/0617 , C01B21/064 , C01B21/0722 , C01B21/076
摘要： REFRACTORY METAL NITRIDES, SUCH AS ALUMINUM NITRIDE, ARE PRODUCED BY HEATING A MIXTURE OF THE REFRACTORY METAL, CARBON AND A ZINC OR CADMIUM COMPOUND INTHE PRESENCE OF NITROGEN AT A TEMPERATURE OF AT LEAST ABOUT 950*C. THE ZINC OR CADMIUM COMPOUND IS REDUCED TO THE CORRESPONDING ELEMENTAL METAL AND EVAPORATED FROMTHE REACTION MASS TO LEAVE THE DESIRED NITRIDE.

9. 发明授权

US5783509A Process for preparing a refractory powder from spent contact masses issuing from the production of silanes, and to refactory products obtained therefrom 失效
$Process for preparing a refractory powder from spent contact masses issuing from the production of silanes, and to refactory products obtained therefrom$
标题翻译：从生产硅烷产生的废接触块制备耐火粉末的方法以及由其获得的反应产物
公开(公告)号：US5783509A
公开(公告)日：1998-07-21
申请号：US807699
申请日：1997-02-28
申请人： Fernanda Manier
发明人： Fernanda Manier
IPC分类号： B09B5/00 , C01B21/068 , C01B21/082 , C21B7/12 , C04B35/584
CPC分类号： C01B21/0826 , C01B21/0682 , C01B21/0823
摘要： The invention relates to a process for the preparation, by nitriding, of a refractory powder containing more than 40% of silicon nitride from spent contact masses issuing from chlorosilane synthesis. The process involves mixing with the copper-free spent mass, silicon or a silicon-rich alloy and optionally a refractory compound to adjust the non-oxidised silicon content to a predetermined value >30%, heating the mixture in a nitrogen atmosphere to trigger the exothermic nitriding reaction, then reducing the product obtained to powder. The refractory powder thus obtained can be mixed with an organic binder to produce taphole blocking masses for blast furnaces or electric furnaces for pyrometallurgy.
摘要翻译：本发明涉及一种通过氮化制备从氯硅烷合成发出的废接触物质中含有40％以上的氮化硅的耐火材料粉末的方法。该方法包括与无铜废料，硅或富硅合金以及任选的耐火化合物混合，以将非氧化硅含量调节至预定值> 30％，在氮气气氛中加热混合物以触发放热氮化反应，然后将得到的产物还原成粉末。这样获得的耐火材料粉末可以与有机粘合剂混合，以产生用于高炉或用于火法冶金的电炉的出渣孔块。

10. 发明授权

US5648028A Method of manufacturing a sintered composite body of silicon nitride and silicon carbide 失效
标题翻译：制造氮化硅和碳化硅烧结复合体的方法
公开(公告)号：US5648028A
公开(公告)日：1997-07-15
申请号：US413445
申请日：1995-03-30
申请人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
发明人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
IPC分类号： C01B21/068 , C04B35/573 , C04B35/575 , C04B35/591 , C04B35/593 , B28B3/00 , C04B33/32
CPC分类号： C01B21/0682 , C01B21/068 , C04B35/573 , C04B35/575 , C04B35/591 , C04B35/593 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12
摘要： A sintered composite body of silicon nitride and silicon carbide is manufactured by mixing a silicon powder with a carbonaceous powder and a sintering additive, producing a mixture, molding the mixture into a molded body, heat-treating the molded body in an atmosphere containing a nitrogen gas for thereby simultaneously nitriding and carbonizing silicon contained in the molded body, and subsequently firing the molded body in a nitrogen gas atmosphere. A composite powder of silicon nitride and silicon carbide which is produced by simultaneously nitriding and carbonizing silicon contained in the molded body has a content of .alpha.-type silicon nitride which is at least 30% of all silicon nitride in the composite powder. To produce such a composite powder, a silicon powder is mixed with a carbonaceous powder and a sintering additive, producing a mixture, and the mixture is heat-treated in an atmosphere containing a nitrogen gas at a temperature of at most 1450.degree. C. for thereby simultaneously nitriding and carbonizing silicon contained in the mixture, the arrangement being such that the temperature of the mixture is increased at a rate lower than 2.degree. C./minute from a temperature before the silicon starts being nitrided and carbonized up to the temperature of at most 1450.degree. C.
摘要翻译：通过将硅粉与碳质粉末和烧结添加剂混合制造氮化硅和碳化硅的烧结复合体，制造混合物，将混合物成型为成型体，在含有氮气的气氛中对成型体进行热处理气体，从而同时对包含在成型体中的硅进行氮化和碳化，随后在氮气气氛中焙烧成型体。通过同时对包含在成型体中的硅进行氮化和碳化而制造的氮化硅和碳化硅的复合粉末具有在复合粉末中为所有氮化硅的至少30％的α型氮化硅的含量。为了制造这种复合粉末，将硅粉末与碳质粉末和烧结添加剂混合，制成混合物，将混合物在含有氮气的气氛中在至多1450℃的温度下进行热处理，从而同时氮化和碳化混合物中所含的硅，该配置使得混合物的温度以低于2℃/分钟的速率从硅开始氮化和碳化之前的温度升高到至多1450℃

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