基本信息:
- 专利标题： Methods for Depositing Films with Organoaminodisilane Precursors
- 申请号：US15459389 申请日：2017-03-15
- 公开(公告)号：US20170186605A1 公开(公告)日：2017-06-29
- 发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
- 申请人： VERSUM MATERIALS US, LLC
- 申请人地址： US PA Allentown
- 专利权人： Versum Materials US, LLC
- 当前专利权人： Versum Materials US, LLC
- 当前专利权人地址： US PA Allentown
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C09D7/00 ; C23C16/455 ; C01B33/12 ; C07F7/10 ; C23C16/34 ; C09D1/00 ; C01B33/021
摘要：
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |