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1. 发明申请

US20180215659A1 COVER GLASS AND GLASS LAMINATE 审中-公开
公开(公告)号：US20180215659A1
公开(公告)日：2018-08-02
申请号：US15874357
申请日：2018-01-18
申请人： ASAHI GLASS COMPANY, LIMITED
发明人： Kazunobu MAESHIGE , Nobutaka AOMINE , Hiroyuki OKAWA , Kiyoshi TAMAI , Hitoshi ONODA , Makoto SANO , Yusuke KOBAYASHI
IPC分类号： C03C17/34 , C03C17/22 , C03C17/02 , B32B17/10 , B32B33/00
CPC分类号： C03C17/3435 , B32B17/10137 , B32B33/00 , B32B2250/42 , B32B2255/20 , B32B2307/558 , B32B2307/584 , B32B2313/00 , B32B2315/08 , B32B2457/20 , C03C3/087 , C03C17/02 , C03C17/225 , C03C21/001 , C03C23/0075 , C03C2217/734 , G03B27/6228
摘要： The present invention provides a cover glass and a glass laminate which are reduced in warpage, and have excellent scratch resistance, low reflecting properties and excellent optical properties. According to the present invention, a cover glass and a glass laminate which are reduced in glass warpage, retain the effect of scratch resistance, and have low reflecting properties and excellent optical properties can be provided by alternately superposing a film including a high-refractive-index material and a film including a low-refractive-index material, in given amounts.

2. 发明申请

US20170015084A1 GRAPHITE-SILICON COMPOSITE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：石墨 - 硅复合材料及其生产方法
公开(公告)号：US20170015084A1
公开(公告)日：2017-01-19
申请号：US15206264
申请日：2016-07-09
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： KAZUHIRO NISHIKAWA , NAOMI NISHIKI , HIDETOSHI KITAURA , ATSUSHI TANAKA , KIMIAKI NAKAYA
IPC分类号： B32B9/04 , B32B37/06 , B32B9/00
CPC分类号： B32B9/04 , B32B7/10 , B32B9/007 , B32B9/041 , B32B9/045 , B32B15/04 , B32B27/28 , B32B37/06 , B32B37/10 , B32B2255/205 , B32B2307/30 , B32B2307/302 , B32B2307/538 , B32B2307/54 , B32B2307/704 , B32B2307/732 , B32B2309/02 , B32B2309/12 , B32B2309/60 , B32B2313/00 , B32B2313/04 , B32B2457/00 , B32B2551/00
摘要： A graphite-silicon composite, including: graphite; silicon; and an intermediate layer that is located between the graphite and the silicon, wherein the intermediate layer includes oxygen, carbon and silicon. Furthermore, provided is a method for producing a graphite-silicon composite, including: layering graphite and silicon; and heating the layered graphite and silicon while applying pressure to them, wherein, during heating the layered graphite and silicon while applying pressure to them, an oxygen concentration in the atmosphere is adjusted to 0.2 vol %, the applied pressure is adjusted to 24.5 MPa or higher, and the heating temperature is adjusted to 1260° C. or higher.
摘要翻译：石墨 - 硅复合材料，包括：石墨; 硅; 以及位于石墨和硅之间的中间层，其中中间层包括氧，碳和硅。此外，提供了一种生产石墨 - 硅复合材料的方法，包括：分层石墨和硅; 在对它们施加压力的同时对层状石墨和硅进行加热，其中，在对层叠的石墨和硅进行加压的同时向其施加压力时，将大气中的氧浓度调整为0.2体积％，将施加的压力调整为24.5MPa，加热温度调节至1260℃以上。

3. 发明申请

US20150321475A1 LIQUID EJECTION HEAD AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液体喷射头及其制造方法
公开(公告)号：US20150321475A1
公开(公告)日：2015-11-12
申请号：US14706857
申请日：2015-05-07
申请人： CANON KABUSHIKI KAISHA
发明人： Junji Tatsumi , Genji Inada , Sayaka Seki , Yuichiro Akama
IPC分类号： B41J2/14 , B32B38/00 , B32B37/18 , B32B3/06 , B32B27/06 , B29C65/52 , B32B9/00 , B41J2/16 , B32B37/12
CPC分类号： B41J2/16 , B29C65/1406 , B29C65/4835 , B29C65/4845 , B29C65/524 , B29C66/1122 , B29C66/54 , B29C66/71 , B29C66/73112 , B29C66/7461 , B29K2701/00 , B29K2707/00 , B29K2709/02 , B29L2031/767 , B32B3/06 , B32B9/00 , B32B9/005 , B32B27/06 , B32B37/1292 , B32B37/18 , B32B38/0004 , B32B2037/1253 , B32B2250/02 , B32B2313/00 , B32B2315/02 , B41J2/14 , B41J2/1433 , B41J2/1603 , B41J2/162 , B41J2/1623 , F16B11/00 , F16B11/006 , Y10T156/1064 , B29K2083/00
摘要： A liquid ejection head includes a recording element substrate that ejects liquid, and an element-substrate support member to which the recording element substrate is bonded with an adhesive. A groove to be filled with the adhesive is provided in a bonding region of the element-substrate support member, at which the element-substrate support member and the recording element substrate are bonded together, along a part or an entirety of the outer circumference of the recording element substrate.
摘要翻译：液体喷射头包括喷射液体的记录元件基板和用粘合剂粘结记录元件基板的元件 - 基板支撑元件。在元件 - 衬底支撑构件的元件 - 衬底支撑构件和记录元件衬底结合在一起的接合区域中，沿着一部分或整体的外周的一部分或全部设置有待填充有粘合剂的沟槽记录元件基板。

4. 发明申请

US20150206853A1 METHOD OF MANUFACTURING A DEVICE 有权
标题翻译：制造装置的方法
公开(公告)号：US20150206853A1
公开(公告)日：2015-07-23
申请号：US14425407
申请日：2013-09-09
申请人： KYOCERA Corporation
发明人： Hideki Matsushita , Masanobu Kitada
IPC分类号： H01L23/00 , B32B37/24 , B32B38/00 , B32B37/18
CPC分类号： H01L24/83 , B32B37/18 , B32B37/24 , B32B38/0008 , B32B38/0036 , B32B2037/243 , B32B2305/30 , B32B2310/14 , B32B2311/00 , B32B2313/00 , B32B2457/14 , C23C14/18 , C23C14/46 , H01L21/2007 , H01L2924/365
摘要： Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×1012/cm2 or less by adjusting the exposure area of the discharged metal body.
摘要翻译：提供了控制存在于接合界面中的金属含量的装置。该装置的制造方法包括：使用FAB枪激活第一基板和第二基板的表面的步骤; 通过使用FAB枪对包含多个金属的排出的金属体溅射多个金属的步骤，并且将多个金属固定在第一基板和第二基板的表面上; 第一基板和第二基板在室温下接合的步骤; 以及与多个金属和构成第一基板或第二基板的元件的凝聚开始温度相比，在高的温度下进行加热的工序。关于固定有多个金属的步骤，通过调整第一基板和第二基板的接合界面上存在的多个金属的密度，通过调整第一基板和第二基板的接触界面的曝光面积而设定为1×10 12 / cm 2以下排出的金属体。

5. 发明申请

US20120135201A1 Semiconductor Structures and Method for Fabricating the Same 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120135201A1
公开(公告)日：2012-05-31
申请号：US12956209
申请日：2010-11-30
申请人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
发明人： Tsung-Chieh Chang , Ching-Hung Ko , Mu-Jia Liu
IPC分类号： B32B3/22 , B32B37/02
CPC分类号： B32B7/14 , B32B17/06 , B32B37/12 , B32B2313/00 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L2224/10135 , H01L2224/11436 , H01L2224/1163 , H01L2224/13082 , H01L2224/13099 , H01L2224/1319 , H01L2224/1601 , H01L2224/16225 , H01L2224/16227 , H01L2224/81139 , H01L2224/81191 , H01L2224/81201 , H01L2224/8134 , H01L2224/94 , Y10T156/10 , Y10T428/24562 , Y10T428/24744 , Y10T428/24826 , H01L2224/81 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor structure is provided. The semiconductor structure includes a first substrate, a second substrate opposite to the first substrate, a plurality of spacers disposed between the first substrate and the second substrate, and an adhesive material bonded with the first substrate and the second substrate within the two adjacent spacers. The invention also provides a method for fabricating the semiconductor structure.
摘要翻译：提供半导体结构。半导体结构包括第一基板，与第一基板相对的第二基板，设置在第一基板和第二基板之间的多个间隔件，以及在两个相邻间隔件内与第一基板和第二基板结合的粘合材料。本发明还提供了一种制造半导体结构的方法。

6. 发明申请

US20170233609A1 RESIN COMPOSITION AND FIXING METHOD FOR PLATE-SHAPED WORKPIECE 审中-公开
公开(公告)号：US20170233609A1
公开(公告)日：2017-08-17
申请号：US15423774
申请日：2017-02-03
申请人： DISCO CORPORATION
发明人： Seiji Harada , Makoto Shimotani
IPC分类号： C09J4/00 , H01L23/00 , B32B9/00 , B32B37/12 , C09J5/00 , B32B7/12
CPC分类号： C09J4/00 , B32B7/12 , B32B9/00 , B32B37/12 , B32B2037/1253 , B32B2307/20 , B32B2310/0837 , B32B2313/00 , B32B2333/12 , B32B2457/14 , C09J5/00 , C09J2205/31 , C09J2433/00 , H01L24/27 , H01L24/94 , C08F220/10
摘要： Disclosed herein is a resin composition for fixing a plate-shaped workpiece. The resin composition includes a composition and a photopolymerization initiator added to the composition. This composition is composed of (meth)acrylate and a plasticizer or a reactive diluent. Preferably, the composition constituting the resin composition contains 30% to 45% by mass of (meth)acrylate having an urethane bond, 5% to 15% by mass of (meth)acrylate not having an urethane bond, and 40% to 65% by mass of plasticizer, which is an ester.

7. 发明授权

US09716107B2 Composite substrate 有权
公开(公告)号：US09716107B2
公开(公告)日：2017-07-25
申请号：US15120458
申请日：2015-02-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Makoto Kawai , Shigeru Konishi
IPC分类号： H01L27/12 , H01L21/84 , H01L21/762 , C30B29/06 , C30B33/06 , B32B9/04 , B32B37/00 , H01L21/768 , H01L29/66 , H01L29/78
CPC分类号： H01L27/1203 , B32B9/04 , B32B37/025 , B32B2255/20 , B32B2307/206 , B32B2313/00 , B32B2315/02 , B32B2315/08 , B32B2457/14 , C30B29/06 , C30B33/06 , H01L21/0242 , H01L21/0245 , H01L21/02521 , H01L21/2007 , H01L21/76254 , H01L21/76841 , H01L21/76846 , H01L21/84 , H01L27/1218 , H01L29/66772 , H01L29/7812 , H01L29/78603
摘要： This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m·K and a volume resistivity of at least 1×108 Ω·cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon.As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.

8. 发明申请

US20170077141A1 COMPOSITE SUBSTRATE 有权
标题翻译：复合基材
公开(公告)号：US20170077141A1
公开(公告)日：2017-03-16
申请号：US15120458
申请日：2015-02-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Makoto Kawai , Shigeru Konishi
IPC分类号： H01L27/12 , H01L21/762 , B32B37/00 , C30B33/06 , B32B9/04 , H01L21/84 , C30B29/06
CPC分类号： H01L27/1203 , B32B9/04 , B32B37/025 , B32B2255/20 , B32B2307/206 , B32B2313/00 , B32B2315/02 , B32B2315/08 , B32B2457/14 , C30B29/06 , C30B33/06 , H01L21/0242 , H01L21/0245 , H01L21/02521 , H01L21/2007 , H01L21/76254 , H01L21/76841 , H01L21/76846 , H01L21/84 , H01L27/1218 , H01L29/66772 , H01L29/7812 , H01L29/78603
摘要： This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m·K and a volume resistivity of at least 1×108 Ω·cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon.As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved.
摘要翻译：作为本发明的结果，即使在相对于可见光不透明的便宜的陶瓷烧结体上设置单晶硅薄膜的复合基板中也可以抑制来自烧结体的金属杂质污染，其表现出优异的导热性，并且在高频范围内进一步表现出很小的损失，并且可以提高特性。

9. 发明授权

US09586391B2 Bonding apparatus and method for manufacturing bonded substrate 有权
标题翻译：接合装置及其制造方法
公开(公告)号：US09586391B2
公开(公告)日：2017-03-07
申请号：US14859627
申请日：2015-09-21
申请人： Shibaura Mechatronics Corporation
发明人： Konosuke Hayashi , Daisuke Matsushima
IPC分类号： B32B41/00 , B23K20/02 , B23K20/233 , B23K20/24 , B23K20/26 , H01L21/67 , B32B37/10 , B32B37/18 , B32B37/00
CPC分类号： B32B41/00 , B23K20/02 , B23K20/233 , B23K20/24 , B23K20/26 , B23K2101/40 , B32B37/003 , B32B37/10 , B32B37/18 , B32B2309/72 , B32B2313/00 , B32B2315/08 , B32B2457/14 , H01L21/67092
摘要： A bonding apparatus includes a substrate holder holding the second substrate; a pusher pushing a back surface of the second substrate; a substrate support unit including a support talon supporting a circumferential edge portion of the first substrate to oppose the second substrate with a prescribed spacing between the second substrate and the circumferential edge portion of the first substrate; and a controller controlling a lifting/lowering operation of the pusher. The pusher pushes one prescribed point of the back surface of the second substrate, the one prescribed point corresponding to a position where a distance between a bonding surface of the first substrate and a bonding surface of the second substrate is shorter than a distance from the circumferential edge portion of the bonding surface of the first substrate to the bonding surface of the second substrate.
摘要翻译：接合装置包括保持第二基板的基板保持件; 推动第二基板的后表面的推动器; 基板支撑单元，其包括支撑爪，所述支撑爪支撑所述第一基板的周缘部分，以在所述第二基板与所述第一基板的周缘部之间以规定的间隔与所述第二基板相对; 以及控制推动器的升降操作的控制器。推动器推动第二基板的背面的一个规定点，对应于第一基板的接合面和第二基板的接合面之间的距离比距离周向的距离短的位置的一个规定点第一基板的接合表面的边缘部分到第二基板的接合表面。

10. 发明申请

US20150207104A1 LAMINATE, METHOD FOR PRODUCING LAMINATE, ELECTRODE, EL ELEMENT, SURFACE LIGHT EMITTER, AND SOLAR CELL 审中-公开
标题翻译：层压板，生产层压板，电极，EL元件，表面发光体和太阳能电池的方法
公开(公告)号：US20150207104A1
公开(公告)日：2015-07-23
申请号：US14415141
申请日：2013-07-22
申请人： MITSUBISHI RAYON CO., LTD.
发明人： Kazunori Mukunoki , Yumiko Saeki , Toshiaki Hattori , Yukichi Konami , Kouji Furukawa
IPC分类号： H01L51/52 , H01L33/38 , H01L33/58 , H01L31/0224
CPC分类号： H01L51/5268 , B32B3/30 , B32B9/00 , B32B2307/202 , B32B2307/51 , B32B2311/00 , B32B2313/00 , B32B2457/00 , H01L31/022425 , H01L31/02366 , H01L33/24 , H01L33/38 , H01L33/58 , H01L51/447 , H01L51/5209 , H01L51/5225 , H01L51/5253 , H01L51/5262 , H01L51/5275 , H05B33/10 , H05B33/14 , Y02E10/549 , Y02P70/521 , Y10T428/24355
摘要： A laminate is described, including a substrate, an undercoat layer on the substrate, and an inorganic film on the undercoat layer. The material of the inorganic film is at least one material of a conductive metal oxide and a metal nitride. In an image obtained by Fourier transforming an image obtained by using an atomic force microscope to take a picture of a surface of the inorganic film, the azimuth angle of the image obtained from the Fourier transformation from the center of the image toward the direction of 12 o'clock is set to 0°. In approximate curves of 36 brightness value plots obtained by radially plotting the brightness values every 10° from 0°, a maximum value is observed in 18 or more of the approximate curves.
摘要翻译：描述了层压体，包括基底，基底上的底涂层和底涂层上的无机膜。无机膜的材料是至少一种导电金属氧化物和金属氮化物的材料。在通过使用原子力显微镜获得的图像进行傅里叶变换以获取无机膜的表面的图像而获得的图像中，从从图像的中心到12的方向的傅里叶变换获得的图像的方位角时钟设置为0°。在通过从0°每10°放射绘制亮度值获得的36个亮度值图的近似曲线中，在18个或更多个近似曲线中观察到最大值。

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