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    • 3. 发明授权
    • Method for producing semiconductor microparticles and the microparticles
    • 半导体微粒和微粒的制造方法
    • US09337382B2
    • 2016-05-10
    • US14466803
    • 2014-08-22
    • M.Technique Co., Ltd.
    • Masakazu Enomura
    • B01F7/00H01L33/00B82Y30/00C01G9/08H01L33/26H01L33/28H01L51/00B82Y35/00H01L21/02
    • H01L33/0083B01F7/00B01F7/00758B01F7/00791B82Y30/00B82Y35/00C01G9/08C01P2004/62C01P2004/64C01P2006/40H01L21/02521H01L21/02601H01L21/02628H01L33/005H01L33/26H01L33/285H01L51/0094Y10S516/927Y10S516/928Y10S977/896
    • It is an object to provide a method for producing compound semiconductor particles in which monodisperse compound semiconductor particles can be prepared according to the intended object, clogging with products does not occur due to self-dischargeability, a large pressure is not necessary, and productivity is high. In producing compound semiconductor particles by separating and precipitating, in a fluid, semiconductor raw materials, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the semiconductor raw materials are separated and precipitated in the thin film fluid. Further, in producing semiconductor microparticles containing semiconductor elements by reacting a compound containing semiconductor elements, in a fluid, with a reducing agent, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the compound containing semiconductor elements is reacted with the reducing agent in the thin film fluid.
    • 本发明的目的是提供一种可以根据预期目的制备单分散化合物半导体颗粒的化合物半导体颗粒的制备方法,由于自放电性而不产生堵塞产物,不需要大的压力,生产率是 高。 在通过在流体中分离和沉淀半导体原料来制备化合物半导体颗粒时,流体在两个处理表面之间形成为薄膜流体,该两个处理表面布置成能够彼此接近和分离,至少一个 其相对于另一个旋转,并且半导体原料在薄膜流体中分离和沉淀。 此外,在通过使流体中含有半导体元素的化合物与还原剂反应来制造含有半导体元件的半导体微粒中,将流体形成为在能够接近和分离的两个处理表面之间的薄膜流体 彼此中的至少一个相对于另一个旋转,并且含有半导体元素的化合物与薄膜流体中的还原剂反应。
    • 6. 发明授权
    • Method for producing semiconductor microparticles and the microparticles
    • 半导体微粒和微粒的制造方法
    • US08841352B2
    • 2014-09-23
    • US12672836
    • 2008-08-07
    • Masakazu Enomura
    • Masakazu Enomura
    • B01F3/08B01F7/00C01G9/08B82Y30/00H01L21/02
    • H01L33/0083B01F7/00B01F7/00758B01F7/00791B82Y30/00B82Y35/00C01G9/08C01P2004/62C01P2004/64C01P2006/40H01L21/02521H01L21/02601H01L21/02628H01L33/005H01L33/26H01L33/285H01L51/0094Y10S516/927Y10S516/928Y10S977/896
    • It is an object to provide a method for producing compound semiconductor particles in which monodisperse compound semiconductor particles can be prepared according to the intended object, clogging with products does not occur due to self-dischargeability, a large pressure is not necessary, and productivity is high. In producing compound semiconductor particles by separating and precipitating, in a fluid, semiconductor raw materials, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the semiconductor raw materials are separated and precipitated in the thin film fluid. Further, in producing semiconductor microparticles containing semiconductor elements by reacting a compound containing semiconductor elements, in a fluid, with a reducing agent, the fluid is formed into a thin film fluid between two processing surfaces arranged so as to be able to approach to and separate from each other, at least one of which rotates relative to the other, and the compound containing semiconductor elements is reacted with the reducing agent in the thin film fluid.
    • 本发明的目的是提供一种可以根据预期目的制备单分散化合物半导体颗粒的化合物半导体颗粒的制备方法,由于自放电性而不产生堵塞产物,不需要大的压力,生产率是 高。 在通过在流体中分离和沉淀半导体原料来制备化合物半导体颗粒时,流体在两个处理表面之间形成为薄膜流体,该两个处理表面布置成能够彼此接近和分离,至少一个 其相对于另一个旋转,并且半导体原料在薄膜流体中分离和沉淀。 此外,在通过使流体中含有半导体元素的化合物与还原剂反应来制造含有半导体元件的半导体微粒中,将流体形成为在能够接近和分离的两个处理表面之间的薄膜流体 彼此中的至少一个相对于另一个旋转,并且含有半导体元素的化合物与薄膜流体中的还原剂反应。