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1. 发明授权

US10224519B2 Secondary battery and method of manufacturing the same 有权
公开(公告)号：US10224519B2
公开(公告)日：2019-03-05
申请号：US13356392
申请日：2012-01-23
申请人： Yoshitaka Kawada , Tetsuo Sakai , Natsuki Toyota , Naotada Okada , Susumu Yahagi
发明人： Yoshitaka Kawada , Tetsuo Sakai , Natsuki Toyota , Naotada Okada , Susumu Yahagi
IPC分类号： H01M2/04 , H01M2/36 , H01M10/0525 , H01M2/02
摘要： A secondary battery according to an embodiment includes a container having a pouring hole through which an electrolyte is poured, and housing the electrolyte, poured through the pouring hole, together with an electrode body; and a sealing lid which is fixed to the container and is closing the pouring hole. The sealing lid has a welding mark existing in a ring shape with a depth through the sealing lid to a lid body of the container, and an inner circumferential side molten mark existing in a ring shape overlapping with the welding mark, on the inner circumferential side of the welding mark in the sealing lid, with a depth corresponding to the thickness of the sealing lid.

2. 发明授权

US09735240B2 High electron mobility transistor (HEMT) 有权
公开(公告)号：US09735240B2
公开(公告)日：2017-08-15
申请号：US14976379
申请日：2015-12-21
申请人： Toshiba Corporation
发明人： William Fenwick , Dong Lee , Long Yang
IPC分类号： H01L29/207 , H01L29/778 , H01L29/20 , H01L29/205 , H01L29/08 , H01L29/66 , H01L29/201
CPC分类号： H01L29/207 , H01L29/0843 , H01L29/1075 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/66462 , H01L29/7786 , H01L29/7787
摘要： A high electron mobility transistor (HEMT) device with a highly resistive layer co-doped with carbon (C) and a donor-type impurity and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a substrate, the highly resistive layer co-doped with C and the donor-type impurity formed above the substrate, a channel layer formed above the highly resistive layer, and a barrier layer formed above the channel layer. In one embodiment, the highly resistive layer comprises gallium nitride (GaN). In one embodiment, the donor-type impurity is silicon (Si). In another embodiment, the donor-type impurity is oxygen (O).

3. 发明授权

US09727310B2 Entropy source for random number generator 有权
公开(公告)号：US09727310B2
公开(公告)日：2017-08-08
申请号：US14675457
申请日：2015-03-31
申请人： OCZ Storage Solutions, Inc.
发明人： Julien C. R. Margetts
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： An entropy source extracts noise associated with the sampling of an RC circuit. The decay time of the RC circuit and other parameters are selected so that a buffer used to sample the voltage remains in an indeterminate voltage region over multiple clock cycles to generate random transitions. The entropy source may be implemented to be compliant with government standards for entropy sources utilized to generate random numbers.

4. 发明授权

US09653556B1 Field plate for high-voltage field effect transistors 有权
公开(公告)号：US09653556B1
公开(公告)日：2017-05-16
申请号：US15056765
申请日：2016-02-29
申请人： Toshiba Corporation
发明人： Long Yang
IPC分类号： H01L29/15 , H01L29/40 , H01L29/20 , H01L29/205 , H01L29/778
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/42316 , H01L29/7786
摘要： A high voltage semiconductor structure with a field plate comprising a depletable material that increases the breakdown voltage of the semiconductor structure. A depletion region forms within the depletable field plate which redistributes the electric field and preventing electric charges from concentrating at the corners of the field plate. The thickness, doping concentration, doping uniformity, and geometric shape of the field plates may be adjusted to optimize the effect of the charge redistribution.

5. 发明授权

US09617656B2 Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow 有权
公开(公告)号：US09617656B2
公开(公告)日：2017-04-11
申请号：US14325195
申请日：2014-07-07
申请人： MANUTIUS IP INC.
发明人： William E. Fenwick , Jeff Ramer
IPC分类号： C23C16/34 , C30B25/14 , H01L21/02 , H01L29/20 , H01L33/00
CPC分类号： C30B25/183 , C30B25/10 , C30B25/14 , C30B25/186 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/0066 , H01L33/0075
摘要： A method of making an aluminum nitride (AlN) buffer layer over a silicon wafer for a light emitting diode (LED) includes preflowing a first amount of ammonia that is sufficient to deposit nitrogen atoms on the surface of a silicon wafer without forming SiNx, before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber.

6. 发明授权

US09417819B2 Cache device for hard disk drives and methods of operations 有权
标题翻译：用于硬盘驱动器的缓存设备和操作方法
公开(公告)号：US09417819B2
公开(公告)日：2016-08-16
申请号：US14079192
申请日：2013-11-13
申请人： OCZ Storage Solutions, Inc.
发明人： Stephen Jeffrey Smith , Franz Michael Schuette
IPC分类号： G06F12/08 , G06F3/06 , G11B20/10
CPC分类号： G06F3/0679 , G06F3/0626 , G06F3/0656 , G06F3/0658 , G06F3/0676 , G11B20/10527
摘要： A solid-state mass storage device adapted to be used as a cache for an hard disk drive that utilizes a more efficient logical data management method relative to conventional systems. The storage device includes a circuit board, a memory controller, at least one non-volatile memory device, and at least two data interfaces. The storage device is coupled to a host computer system and configured to operate as a cache for at least one hard disk drive. The storage device is interposed between the host computer system and the at least one hard disk drive. Both the storage device and the at least one hard disk drive are coupled to the host computer system through a single connection and configured to operate in a daisy chain configuration.
摘要翻译：一种固态海量存储装置，适用于相对于常规系统利用更有效的逻辑数据管理方法的硬盘驱动器的高速缓存。存储装置包括电路板，存储器控制器，至少一个非易失性存储器件以及至少两个数据接口。存储设备耦合到主计算机系统并且被配置为作为至少一个硬盘驱动器的高速缓存操作。存储设备插入在主计算机系统和至少一个硬盘驱动器之间。存储设备和至少一个硬盘驱动器通过单个连接耦合到主计算机系统，并被配置为以菊花链配置操作。

7. 发明授权

US09357157B2 Video transferring system, video transmission apparatus, video reception apparatus and video transferring method 有权
标题翻译：视频传输系统，视频传输装置，视频接收装置和视频传输方法
公开(公告)号：US09357157B2
公开(公告)日：2016-05-31
申请号：US13278715
申请日：2011-10-21
申请人： Sunao Wada , Yasuo Ohya , Shunichi Gondo
发明人： Sunao Wada , Yasuo Ohya , Shunichi Gondo
IPC分类号： H04N5/77 , H04N5/765
CPC分类号： H04N5/77 , H04N5/765
摘要： In a transmission side, a layer adjusting unit performs an adjustment to store a scalable encoded video data in a memory, select and output a scalable data of a base quality as a real-time video, read from a memory a scalable data of an enhancement quality based on the designation of a enhancement quality and a transmission period of time, and output the scalable data of an enhancement quality together with a real-time scalable data. In the receiving side, a layer synthesizing unit synthesizes and outputs a real-time video at normal times, and lowers the real-time video to a quality of the base layer if there is an enhancement quality video of a designated period of time, thereby reading the base quality layer data corresponding to the designated video from the memory (153) and synthesizing the data with the enhancement quality video to output the resulting data.
摘要翻译：在发送侧，层调整单元执行调整以将可缩放编码视频数据存储在存储器中，选择并输出作为实时视频的基本质量的可伸缩数据，从存储器读取增强的可伸缩数据基于指定增强质量和传输时间段的质量，并且将实时可缩放数据与增强质量一起输出可伸缩数据。在接收侧，如果存在指定时间段的增强质量视频，则层合成单元在正常时间合成并输出实时视频，并且将实时视频降低到基本层的质量，从而从存储器（153）读取与指定视频对应的基本质量层数据，并且将该数据与增强质量视频合成以输出结果数据。

8. 发明授权

US09342120B2 Mounting structure and method for dissipating heat from a computer expansion card 有权
标题翻译：用于从计算机扩展卡散热的安装结构和方法
公开(公告)号：US09342120B2
公开(公告)日：2016-05-17
申请号：US14458614
申请日：2014-08-13
申请人： OCZ Storage Solutions Inc.
发明人： Dokyun Kim , Karl Reinke
IPC分类号： H05K7/20 , G06F1/20 , F28D15/02 , G06F1/18 , H01L23/427 , H05K5/02 , H05K7/14
CPC分类号： G06F1/20 , F28D15/02 , G06F1/185 , G06F2200/201 , H01L23/427 , H01L2924/0002 , H05K5/0213 , H05K7/1417 , Y10T29/49002 , Y10T29/49004 , Y10T29/49826 , H01L2924/00
摘要： A mounting structure adapted for mounting an expansion card within a computer enclosure and configured to directly absorb and conduct heat from a heat source (such as an IC chip) on the card to the ambient atmosphere surrounding the enclosure. The mounting structure includes a mounting bracket, a heat sink adapted to contact a surface of the heat source on the expansion card, an extension interconnecting the heat sink and the mounting bracket, one or more features for conducting heat from the heat sink to the mounting bracket, and one or more features associated with the mounting bracket for dissipating heat from the mounting structure to the ambient atmosphere surrounding the enclosure.
摘要翻译：一种安装结构，其适于将扩展卡安装在计算机外壳内并且被配置为直接吸收并将热量从卡上的热源（例如IC芯片）传导到围绕外壳的环境大气。安装结构包括安装支架，适于接触膨胀卡上的热源的表面的散热器，将散热器和安装支架相互连接的延伸件，用于将热量从散热器传导到安装件的一个或多个特征支架和与安装支架相关联的一个或多个特征，用于将热量从安装结构散发到围绕外壳的周围环境。

9. 发明申请

US20150303359A1 High Efficiency Light Emitting Diode Package Suitable for Wafer Level Packaging 有权
标题翻译：高效发光二极管封装适用于晶圆级封装
公开(公告)号：US20150303359A1
公开(公告)日：2015-10-22
申请号：US14256715
申请日：2014-04-18
申请人： Toshiba Corporation
发明人： Kai Liu , Chao-Kun Lin
IPC分类号： H01L33/58 , H01L33/54 , H01L33/56 , H01L33/50
CPC分类号： H01L33/58 , H01L33/507 , H01L33/54 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
摘要： An LED package and method for LED packaging is disclosed. In one embodiment, an LED package includes a carrier substrate having a predefined surface area, an LED device bonded to the carrier substrate, the LED device having a footprint area of at least fifty percent of the predefined surface area of the carrier substrate, and an encapsulant lens having a top surface inclined inwardly at an angle in the range of about 10° to about 140°. In one embodiment, the top surface of the encapsulant lens layer has a concave cone shape. In one embodiment, a wafer level packaging process includes forming an encapsulant lens layer portion having a top surface inclined inwardly at an angle in the range of about 10° to about 140° on each of a plurality of LED devices bonded to a carrier substrate wafer.
摘要翻译：公开了一种用于LED封装的LED封装和方法。在一个实施例中，LED封装包括具有预定表面积的载体衬底，结合到载体衬底的LED器件，LED器件具有占载体衬底的预定表面积的至少百分之五十的覆盖区域，以及密封透镜具有向上倾斜约10°至约140°范围内的顶部表面。在一个实施例中，密封透镜层的顶表面具有凹锥形。在一个实施例中，晶片级封装工艺包括形成密封透镜层部分，该封装透镜层部分具有在大约10°至大约140°范围内向内倾斜的顶表面，所述顶表面在结合到载体衬底晶片的多个LED器件中的每一个上。

10. 发明授权

US09141294B2 Controller for storage apparatus and controlling method for storage apparatus 有权
标题翻译：存储装置用控制器及存储装置的控制方法
公开(公告)号：US09141294B2
公开(公告)日：2015-09-22
申请号：US13567925
申请日：2012-08-06
申请人： Yoshiki Namba , Hiroyuki Nishikawa , Taichi Tashiro , Keiji Yamamoto , Kohta Nakamura
发明人： Yoshiki Namba , Hiroyuki Nishikawa , Taichi Tashiro , Keiji Yamamoto , Kohta Nakamura
IPC分类号： G06F12/00 , G06F3/06
CPC分类号： G06F3/0611 , G06F3/065 , G06F3/0656 , G06F3/0688
摘要： According to one embodiment, a controller for a storage apparatus is disclosed having interfaces connectable to a host system, a first storage apparatus and a second storage apparatus. A data in the first storage apparatus and a data in the second storage apparatus are duplicates. A status table stores the operating state regarding the first storage apparatus and the second storage apparatus, wherein the operating state indicates among writing, reading, or standing by. A monitor monitors the interfaces and set up the operating state into the status table. A buffer memory buffers the data for writing in the first storage apparatus and the second storage apparatus. A command response unit receives the data for writing and write-in request from a host system, and directs the writing of the data to the first storage apparatus and the second storage apparatus while making the buffer memory buffer the received data.
摘要翻译：根据一个实施例，公开了一种用于存储装置的控制器，其具有可连接到主机系统的接口，第一存储装置和第二存储装置。第一存储装置中的数据和第二存储装置中的数据是重复的。状态表存储关于第一存储装置和第二存储装置的操作状态，其中操作状态在写入，读取或待机之间指示。监视器监视接口并将操作状态设置到状态表中。缓冲存储器缓冲用于在第一存储装置和第二存储装置中写入的数据。命令响应单元从主机系统接收用于写入和写入请求的数据，并且在使缓冲存储器缓冲接收到的数据的同时，将数据写入到第一存储装置和第二存储装置。

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