专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4073055A Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4073055A
公开(公告)日：1978-02-14
申请号：US770605
申请日：1977-02-22
申请人： Minoru Kimura , Hiroyuki Tango , Yukio Ohmori
发明人： Minoru Kimura , Hiroyuki Tango , Yukio Ohmori
IPC分类号： H01L29/78 , H01L21/268 , H01L21/301 , H01L21/304 , H01L21/306 , H01L21/78 , H01L21/86 , H01L23/544 , H01L27/12 , H01L29/786 , H01L21/302
CPC分类号： H01L21/3043 , H01L21/268 , H01L21/78 , H01L23/544 , H01L2223/54453 , H01L2924/0002
摘要： A method for the manufacture of semiconductor devices comprises the steps of forming a number of mutually electrically isolated semiconductor islands on an insulating substrate and cutting a semiconductor wafer, made of semiconductor elements and substrate, along its dicing line to provide a number of semiconductor chips, the method characterized in that additional semiconductor islands are formed on the insulating substrate simultaneously with, or after, the formation of the first-mentioned semi-conductor islands so that each substantially surrounds the chip. The method permits very easy mask alignments for photoengraving as well as a clear judgment as to whether or not the formation of contact openings has been completed.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在绝缘衬底上形成多个相互电隔离的半导体岛，并沿其切割线切割由半导体元件和衬底制成的半导体晶片以提供多个半导体芯片，该方法的特征在于，在形成第一提到的半导体岛的同时或之后，在绝缘基板上形成附加的半导体岛，使得其基本上围绕芯片。该方法允许用于光刻的非常容易的掩模对准以及关于接触开口的形成是否已经完成的明确判断。

2. 发明授权

US4195344A Computer system with a configuration monitor 失效
标题翻译：具有配置监视器的计算机系统
公开(公告)号：US4195344A
公开(公告)日：1980-03-25
申请号：US893407
申请日：1978-04-04
申请人： Isamu Yamazaki
发明人： Isamu Yamazaki
IPC分类号： G06F13/14 , G06F9/00 , G06F15/167 , G06F15/173 , G06F15/177 , G06F15/16 , G06F15/20
CPC分类号： G06F15/177 , G06F15/17343
摘要： A computer system in which the configuration of a plurality of information processing modules, which are provided in at least first and second configuration points, may be automatically monitored and supervised, comprises a plurality of switching modules provided in a third configuration point, each switching module having a configuration point number and each of the information processing modules having an identification number; and a configuration monitoring center for at least monitoring the connecting conditions between the switching modules and the configuration monitoring center for supervision of the computer system. Timing signals are delivered from the configuration monitoring center to inquire about conditions in the information processing modules and switching modules. Status lines are provided for delivering response signals representing the conditions and identification numbers of the information processing modules and configuration point numbers of the switching modules in the first and second configuration points and third configuration point to the configuration monitoring center and status distribution lines are provided for transferring the response signals from the information processing modules in the first and second configuration points to the switching modules in the third configuration point. The switching modules in the third configuration point each include a response generator which is responsive to the timing signals for delivering a combination of response signals from the information processing modules in the first and second configuration points to the configuration monitoring center by way of the status lines.
摘要翻译：可以自动监视和监督至少第一和第二配置点中提供的多个信息处理模块的配置的计算机系统包括设置在第三配置点的多个交换模块，每个交换模块具有配置点号，并且每个信息处理模块具有标识号; 以及配置监视中心，用于至少监视交换模块与配置监视中心之间的连接状况，以监视计算机系统。定时信号从配置监控中心发出，询问信息处理模块和交换模块的状况。提供状态线，用于传送表示信息处理模块的条件和标识号的响应信号，以及第一和第二配置点中的交换模块的配置点号以及配置监视中心的第三配置点和状态分配线，在第三配置点将来自第一和第二配置点的信息处理模块的响应信号传送到交换模块。第三配置点中的交换模块各自包括响应发生器，其响应于定时信号，用于通过状态线将来自第一和第二配置点的信息处理模块的响应信号的组合传送到配置监视中心。

3. 发明授权

US4155377A Hot fluid-conducting pipe assembly 失效
标题翻译：热流体导管组件
公开(公告)号：US4155377A
公开(公告)日：1979-05-22
申请号：US846940
申请日：1977-10-31
申请人： Hiroshige Suzuki , Eizi Horie , Hideo Nagashima
发明人： Hiroshige Suzuki , Eizi Horie , Hideo Nagashima
IPC分类号： C21B9/10 , F16L59/12 , F16L59/14 , F16L59/147 , G21D1/02 , F16L9/14
CPC分类号： F16L59/12 , G21D1/02 , Y02E30/40
摘要： A hot fluid-conducting pipe assembly, comprising an inner metal pipe through which flows a hot fluid,Support pins regularly arranged on and outwardly projecting from the outer surface of the inner metal pipe,Refractory of said coupling members fixed to the inner metal pipe by the support pins, each coupling members having upper and lower faces concentric with the surface of the inner metal pipe, trapezoidal side faces in the longitudinal direction of the inner metal pipe, and sectorial side faces in the circumferential direction of the inner metal pipe,Heat-insulating refractory blocks mounted between the coupling members and each having an underside portion provided with a cushioning layer formed of an elastic refractory material,A heat-insulating layer formed of an elastic refractory material and uniformly covering the upper faces of the coupling members and of the heat-insulating blocks, andAn outer metal pipe covering the heat-insulating layer.
摘要翻译：一种热流体导管组件，其包括内金属管，通过该内金属管流动热流体，定期安装并从外部金属管外表面投射的支撑引脚，固定在内金属管上的固定联接构件的修复支撑销，每个联合成员具有与内金属管的表面相同的上层和下层，内部金属管的纵向方向上的TRAPEZOIDAL侧面以及内部金属管，热管的圆周方向的部分侧面 - 联合成员之间安装的冲击块和每个具有由形成弹性耐火材料的挤压层提供的下部的部件组成的耐热绝缘层，形成弹性制品的绝热层，并且均匀地覆盖耦合构件的上表面和绝热块，以及覆盖绝热层的外部金属管。

4. 发明授权

US4858110A Parallel data processor with shift register inter-processor transfer 失效
标题翻译：并行数据处理器带移位寄存器的处理器间传输
公开(公告)号：US4858110A
公开(公告)日：1989-08-15
申请号：US29637
申请日：1987-03-24
申请人： Hiroyuki Miyata
发明人： Hiroyuki Miyata
IPC分类号： G06F15/16 , G06F15/173 , G06F15/177 , G06F15/80
CPC分类号： G06F15/8023
摘要： A parallel data processor is disclosed, in which a plurality of fundamental computing elements each comprising a computer and a memory are connected in a two-dimensional lattice configuration, each of said fundamental computing elements being operated by an identical instruction provided by a single control section, and in which said each fundamental computing element is provided with a shift register having ability of data transmission to the memory in said element and of further data transmission, which is asynchronous to operation in said element, between the adjacent fundamental computing elements, said latter data transmission being conducted concurrently to the operation in said element.

5. 发明授权

US4112648A Wall structure of hot fluid chamber 失效
标题翻译：热流体室的壁结构
公开(公告)号：US4112648A
公开(公告)日：1978-09-12
申请号：US846939
申请日：1977-10-31
申请人： Hiroshige Suzuki , Eizi Horie , Hideo Nagashima
发明人： Hiroshige Suzuki , Eizi Horie , Hideo Nagashima
IPC分类号： F16L59/02 , F16L59/05 , F16L59/12 , F28F9/00 , G21C11/08 , E04G11/04 , B65D25/18
CPC分类号： G21C11/086 , Y02E30/40
摘要： Wall structure of a hot fluid chamber, comprisingAn inner metal wall;A plurality of support pins regularly arranged on and projecting outward from the surface of the inner metal wall;A plurality of coupling members fixed to the inner metal plate by the support pins, each coupling member being of a truncated quadrangular pyramid shape and made of a heat-insulating refractory material;A plurality of heat-insulating refractory blocks mounted between the coupling members, each block having the underside portion provided with a cushioning layer formed of an elastic refractory material;A heat-insulating layer formed of an elastic refractory material and covering the surfaces of the coupling members and of the heat-insulating refractory blocks; andAn outer metal wall covering the heat-insulating layer.

6. 发明授权

US4106045A Field effect transistors 失效
标题翻译：场效应晶体管
公开(公告)号：US4106045A
公开(公告)日：1978-08-08
申请号：US686537
申请日：1976-05-14
申请人： Yoshio Nishi
发明人： Yoshio Nishi
IPC分类号： H01L29/78 , H01L21/331 , H01L21/74 , H01L27/12 , H01L29/73 , H01L29/786
CPC分类号： H01L29/78612 , H01L21/743 , H01L29/78609 , H01L29/78657
摘要： A field effect transistor includes a thin silicon layer formed on a sapphire substrate and having source, gate and drain regions. A buried layer of the same conductivity type as that of the gate region and a higher impurity concentration than that of the gate region at the lower portion of a junction between the source and gate regions.
摘要翻译：场效应晶体管包括形成在蓝宝石衬底上并具有源极，栅极和漏极区域的薄硅层。与栅极区域相同的导电类型的掩埋层和比源极和栅极区域之间的结的下部的栅极区域的杂质浓度更高的杂质浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式