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    • 1. 发明授权
    • Hot fluid-conducting pipe assembly
    • 热流体导管组件
    • US4155377A
    • 1979-05-22
    • US846940
    • 1977-10-31
    • Hiroshige SuzukiEizi HorieHideo Nagashima
    • Hiroshige SuzukiEizi HorieHideo Nagashima
    • C21B9/10F16L59/12F16L59/14F16L59/147G21D1/02F16L9/14
    • F16L59/12G21D1/02Y02E30/40
    • A hot fluid-conducting pipe assembly, comprising an inner metal pipe through which flows a hot fluid,Support pins regularly arranged on and outwardly projecting from the outer surface of the inner metal pipe,Refractory of said coupling members fixed to the inner metal pipe by the support pins, each coupling members having upper and lower faces concentric with the surface of the inner metal pipe, trapezoidal side faces in the longitudinal direction of the inner metal pipe, and sectorial side faces in the circumferential direction of the inner metal pipe,Heat-insulating refractory blocks mounted between the coupling members and each having an underside portion provided with a cushioning layer formed of an elastic refractory material,A heat-insulating layer formed of an elastic refractory material and uniformly covering the upper faces of the coupling members and of the heat-insulating blocks, andAn outer metal pipe covering the heat-insulating layer.
    • 一种热流体导管组件,其包括内金属管,通过该内金属管流动热流体,定期安装并从外部金属管外表面投射的支撑引脚,固定在内金属管上的固定联接构件的修复 支撑销,每个联合成员具有与内金属管的表面相同的上层和下层,内部金属管的纵向方向上的TRAPEZOIDAL侧面以及内部金属管,热管的圆周方向的部分侧面 - 联合成员之间安装的冲击块和每个具有由形成弹性耐火材料的挤压层提供的下部的部件组成的耐热绝缘层,形成弹性制品的绝热层,并且均匀地覆盖耦合构件的上表面和 绝热块,以及覆盖绝热层的外部金属管。
    • 4. 发明授权
    • Method of producing .beta.-silicon carbide
    • 生产β-碳化硅的方法
    • US4368181A
    • 1983-01-11
    • US293218
    • 1981-08-05
    • Hiroshige SuzukiTeizo Hase
    • Hiroshige SuzukiTeizo Hase
    • C01B31/36
    • C01B31/36C01P2006/80
    • A method of producing inexpensive .beta.-silicon carbide at a relatively low temperature and in a high yield, wherein a raw material mixture consisting of carbonaceous powder having a particle size of not larger than 60 .mu.m and silica powder having a particle size of not larger than 150 .mu.m is continuously heated in a reaction system having a high temperature zone and a low temperature zone to form silicon monoxide in the reaction system together with SiC; the silicon monoxide is condensed at the low temperature zone to capture and is recovered in the reaction product; and the recovered product during the reaction or after the reaction is stirred, mixed and pulverized.
    • PCT No.PCT / JP80 / 00305 Sec。 371日期1981年8月5日 102(e)日期1981年8月5日PCT提交1980年12月12日PCT公布。 出版物WO81 / 01699 日期:1981年6月25日。一种在相对低的温度和高产率下生产便宜的β-碳化硅的方法,其中由粒径不大于60μm的碳质粉末组成的原料混合物和二氧化硅粉末 在具有高温区和低温区的反应体系中连续加热粒径不大于150μm的颗粒,与SiC一起在反应体系中形成一氧化硅; 一氧化硅在低温区冷凝以捕获并在反应产物中回收; 并且将反应期间或反应后的回收产物搅拌,混合并粉碎。