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1. 发明授权

US09070768B2 DMOS transistor having an increased breakdown voltage and method for production 有权
标题翻译：具有增加的击穿电压的DMOS晶体管和生产方法
公开(公告)号：US09070768B2
公开(公告)日：2015-06-30
申请号：US13579155
申请日：2010-02-15
申请人： Ralf Lerner , Phil Hower , Gabriel Kittler , Klaus Schottmann
发明人： Ralf Lerner , Phil Hower , Gabriel Kittler , Klaus Schottmann
IPC分类号： H01L29/66 , H01L21/336 , H01L29/78 , H01L29/06 , H01L29/423
CPC分类号： H01L29/7828 , H01L29/0623 , H01L29/42376 , H01L29/4238 , H01L29/66666
摘要： A depletion type DMOS transistor comprises a gap in electrode material allowing incorporation of a well dopant species into the underlying semiconductor material. During subsequent dopant diffusion a continuous well region is obtained having an extended lateral extension without having an increased depth. The source dopant species is implanted after masking the gap. Additional channel implantation is performed prior to forming the gate dielectric material.
摘要翻译：耗尽型DMOS晶体管包括电极材料中的间隙，允许将阱掺杂剂物质并入到下面的半导体材料中。在随后的掺杂剂扩散期间，获得具有延伸的横向延伸而不增加深度的连续阱区。掩蔽间隙后植入源掺杂剂物质。在形成栅极电介质材料之前执行附加沟道注入。

2. 发明申请

US20130026444A1 SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION 有权
标题翻译：使用离子植入法合成来自金属碳解决方案的石墨
公开(公告)号：US20130026444A1
公开(公告)日：2013-01-31
申请号：US13647077
申请日：2012-10-08
申请人： BOARD OF REGENTS, THE UNIVERSITY OF TE , TEXAS INSTRUMENTS, INC.
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L21/3115 , H01L21/311 , H01L29/15
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，凹陷区域被图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

3. 发明申请

US20110158115A1 Power Efficiency and Packet Delivery Ratio Through Micro Rate Control at Access Point Functionality Enabled Devices 审中-公开
标题翻译：通过接入点功能启用设备的微速率控制实现功率效率和分组传送率
公开(公告)号：US20110158115A1
公开(公告)日：2011-06-30
申请号：US12752434
申请日：2010-04-01
申请人： Yanjun Sun , David Levy , Ofer Guetta
发明人： Yanjun Sun , David Levy , Ofer Guetta
IPC分类号： H04L12/26
CPC分类号： H04W52/0274 , Y02D70/1242 , Y02D70/1262 , Y02D70/142 , Y02D70/144 , Y02D70/146 , Y02D70/162 , Y02D70/22 , Y02D70/23
摘要： Embodiments of the invention provide a method to allow a software access point (SAP)-enabled device to go to sleep as much as possible without sacrificing throughput and latency across networks. The SAP-enabled device defers transmissions from client stations if maximum end-to-end throughput that can be supported by the networks is below the maximum throughput supported by a connection to the client station.
摘要翻译：本发明的实施例提供一种允许使软件接入点（SAP）启用的设备尽可能地进入睡眠的方法，而不会牺牲跨网络的吞吐量和等待时间。如果网络可以支持的最大端到端吞吐量低于与客户端的连接支持的最大吞吐量，则启用SAP的设备会延迟来自客户端站的传输。

4. 发明申请

US20110129979A1 Method of Manufacturing a Semiconductor Device Having Improved Transistor Performance 有权
标题翻译：制造具有改善的晶体管性能的半导体器件的方法
公开(公告)号：US20110129979A1
公开(公告)日：2011-06-02
申请号：US11832088
申请日：2007-08-01
申请人： Bradley D. Sucher , Christopher S. Whitesell , Joshua J. Hubregsen , James H. Beatty
发明人： Bradley D. Sucher , Christopher S. Whitesell , Joshua J. Hubregsen , James H. Beatty
IPC分类号： H01L21/336
CPC分类号： H01L21/823864 , H01L21/3185 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： In one aspect provides a method of manufacturing a semiconductor device having improved transistor performance. In one aspect, this improvement is achieved by conducting a pre-deposition spacer deposition process wherein a temperature of a bottom region of a furnace is higher than a temperature of in the top region and is maintained for a predetermined period. The pre-deposition temperature is changed to a deposition temperature, wherein a temperature of the bottom region is lower than a temperature of the top region.
摘要翻译：一方面提供一种制造具有改进的晶体管性能的半导体器件的方法。在一个方面，通过进行预沉积间隔物沉积工艺，其中炉的底部区域的温度高于顶部区域中的温度并保持预定时间段来实现该改进。预沉积温度改变为沉积温度，其中底部区域的温度低于顶部区域的温度。

5. 发明申请

US20110091647A1 GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION 有权
标题翻译：石墨合成化学蒸气沉积
公开(公告)号：US20110091647A1
公开(公告)日：2011-04-21
申请号：US12774342
申请日：2010-05-05
申请人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
发明人： Luigi Colombo , Xuesong Li , Rodney S. Ruoff
IPC分类号： C23C16/44 , C23C16/26
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186
摘要： Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
摘要翻译：合成石墨烯薄膜的方法。石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物，从而从金属或电介质上的有机化合物生长石墨烯。然后将金属或电介质冷却至室温。作为上述方法的结果，独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质，该石墨烯的尺寸远大于在碳化硅，单晶硅衬底或天然石墨上可获得的尺寸。

6. 发明申请

US20100278065A1 Traffic Load Estimation for Access Point Functionality Enabled Mobile Devices 审中-公开
标题翻译：移动设备接入点功能的流量负载估计
公开(公告)号：US20100278065A1
公开(公告)日：2010-11-04
申请号：US12770455
申请日：2010-04-29
申请人： Yanjun Sun , Ariton E. Xhafa
发明人： Yanjun Sun , Ariton E. Xhafa
IPC分类号： H04L12/26 , H04W24/00
CPC分类号： H04W52/0225 , Y02D70/1242 , Y02D70/1262 , Y02D70/142 , Y02D70/144 , Y02D70/146 , Y02D70/162 , Y02D70/22 , Y02D70/23
摘要： Embodiments of the invention comprise a system and method for estimating a traffic load on a wireless network. An access point notifies a station that the access point will not receive transmissions during a first quiet period. After the first quiet period, the access point monitors the wireless network during a first monitoring period. If no transmissions are received during the first monitoring period, the access point notifies the station that it will not receive transmissions during a second quiet period. The second quiet period has an equal or longer duration than the first quiet period. The access point alternates between monitoring periods and quiet periods and progressively expands the duration of the quiet periods as long as no transmissions are received during the monitoring periods. If a station notifies the access point that packets are pending at the device, the monitoring period is extended to handle these packets immediately.
摘要翻译：本发明的实施例包括用于估计无线网络上的业务负载的系统和方法。接入点通知站点在第一安静期间接入点将不接收传输。在第一个安静时段之后，接入点在第一个监控期间监视无线网络。如果在第一监视期间没有接收到传输，则接入点通知站在第二安静期期间不接收传输。第二个安静的时期与第一个安静的时期相同或更长。接入点在监视周期和安静时段之间交替，并且只要在监视周期内没有接收到传输，则逐渐扩展安静时段的持续时间。如果站点通知接入点设备上的数据包处于待处理状态，则监视周期将被延长以立即处理这些数据包。

7. 发明申请

US20100224851A1 SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION 有权
标题翻译：使用离子植入法合成来自金属碳解决方案的石墨
公开(公告)号：US20100224851A1
公开(公告)日：2010-09-09
申请号：US12706116
申请日：2010-02-16
申请人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L29/15 , C04B35/536 , H01L21/20
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，将凹陷区域图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

8. 发明申请

US20100195664A1 Smart Adjustment of Backoff Counter and Contention Window for Improved Random Access 有权
标题翻译：智能调整后退计数器和竞争窗口，改进随机访问
公开(公告)号：US20100195664A1
公开(公告)日：2010-08-05
申请号：US12697098
申请日：2010-01-29
申请人： Jin-Meng Ho
发明人： Jin-Meng Ho
IPC分类号： H04L12/413
CPC分类号： H04L12/413
摘要： A method and system for random access control is disclosed. A backoff counter is used to determine the start time of a contended allocation for a device. The backoff counter is set to an integer randomly drawn from the interval [1, CW], where CW is a contention window value selected based upon the priority of the traffic to be transmitted. The backoff counter is decremented for each idle contention slot detected. When the backoff counter reaches zero, the device attempts to transmit in the next contention slot. If the device receives no acknowledgement or an incorrect acknowledgment, then the transmission has failed. After a failed transmission, CW is set by alternately doubling the CW value up to a CWmax value for the user priority. CW is unchanged, if it was doubled in the last setting; and CW is doubled, if it was unchanged in the last setting.
摘要翻译：公开了一种用于随机存取控制的方法和系统。退货计数器用于确定设备的竞争分配的开始时间。退避计数器设置为从区间[1，CW]中随机抽取的整数，其中CW是基于要发送的流量的优先级选择的竞争窗口值。对于检测到的每个空闲争用时隙，退避计数器递减。当退避计数器达到零时，设备尝试在下一个争用时隙中进行传输。如果设备没有收到确认或错误的确认，则传输失败。发送失败后，通过将CW值交替加倍至用户优先级的CWmax值来设置CW。 CW在不变的情况下，如果在最后一个环境中翻倍; 如果在最后一个设置中没有变化，CW将加倍。

9. 发明申请

US20100158166A1 Noise Injection Circuit and Method for Signal Processing 有权
标题翻译：噪声注入电路和信号处理方法
公开(公告)号：US20100158166A1
公开(公告)日：2010-06-24
申请号：US12342310
申请日：2008-12-23
申请人： Hardik Prakash GANDHI
发明人： Hardik Prakash GANDHI
IPC分类号： H04B1/00 , H04L27/08
CPC分类号： H04B1/0475 , H03F1/3241 , H03F1/3247 , H03F3/24 , H03F2200/405 , H03F2200/435 , H03F2201/3233 , H04B2001/0425 , H04L27/2624
摘要： A signal processing circuit is configured to calculate a gain ratio to efficiently reduce a peak to average signal ratio for an input signal by identifying signal peaks and determining the signal peak magnitudes. A window function in combination with the gain ratio is applied to a portion of the input stream having a peak signal to create a cancellation pulse to be applied to that peak signal. The cancellation pulse phase is aligned with the signal phase, thereby causing minimal phase distortion in the resultant output signal and accurate peak cancellation. The cancellation pulse can also include a finite impulse response filter portion to efficiently handle wide bandwidth signals. The hardware may be configured to process multiple signal streams in parallel to reduce hardware requirements. An algorithm can determine the effect of multiple corrections to the input stream to avoid overcorrection in the signal processing process.
摘要翻译：信号处理电路被配置为通过识别信号峰值并确定信号峰值幅度来计算增益比以有效地降低输入信号的峰值与平均信号比。将具有增益比的窗函数应用于具有峰值信号的输入流的一部分以产生要施加到该峰值信号的消除脉冲。消除脉冲相位与信号相位对准，从而在最终输出信号中产生最小的相位失真，并获得准确的峰值消除。消除脉冲还可以包括有效的脉冲响应滤波器部分，以有效地处理宽带宽信号。硬件可以被配置为并行处理多个信号流以减少硬件要求。算法可以确定多个校正对输入流的影响，以避免信号处理过程中的过度校正。

10. 发明申请

US20100124871A1 POLISH PAD CONDITIONING IN MECHANICAL POLISHING SYSTEMS 有权
标题翻译：机械抛光系统中的抛光垫调节
公开(公告)号：US20100124871A1
公开(公告)日：2010-05-20
申请号：US12274140
申请日：2008-11-19
申请人： Eugene C. Davis , Gul Bahar Basim
发明人： Eugene C. Davis , Gul Bahar Basim
IPC分类号： B24B1/00 , B24B7/00
CPC分类号： B24B53/017 , B24B37/042 , B24B57/02
摘要： A mechanical polishing apparatus includes a polishing pad, at least one carrier head positioned over and off center relative to the polishing pad and configured for holding at least one substrate against the polishing pad within a first annular region of the polishing pad when the polishing pad is rotating. At least one conditioning head is positionable over and off center relative the polishing pad at a plurality of first positions and configured for applying a contacting surface of at least one conditioning pad against the polishing pad when the polishing pad is rotating, where the conditioning pad is applied to a second annular region of the polishing pad and moves between the plurality of first positions. In the apparatus, the diameter of the conditioning pad≦a difference between a radius of the polishing pad and a width of the first annular region.
摘要翻译：机械抛光装置包括抛光垫，至少一个载体头相对于抛光垫定位在中心和上方，并且被配置为当抛光垫是抛光垫时，在抛光垫的第一环形区域内保持至少一个基板抵靠抛光垫旋转。至少一个调节头可在多个第一位置处相对于抛光垫定位在中心上方，并且被配置为当抛光垫旋转时将至少一个调节垫的接触表面施加到抛光垫上，其中调节垫是施加到抛光垫的第二环形区域并在多个第一位置之间移动。在该装置中，调节垫的直径为n1E;抛光垫的半径与第一环形区域的宽度之差。

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