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1. 发明授权

US08309438B2 Synthesizing graphene from metal-carbon solutions using ion implantation 有权
标题翻译：使用离子注入合成来自金属 - 碳溶液的石墨烯
公开(公告)号：US08309438B2
公开(公告)日：2012-11-13
申请号：US12706116
申请日：2010-02-16
申请人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L21/20
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，凹陷区域被图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

2. 发明申请

US20100224851A1 SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION 有权
标题翻译：使用离子植入法合成来自金属碳解决方案的石墨
公开(公告)号：US20100224851A1
公开(公告)日：2010-09-09
申请号：US12706116
申请日：2010-02-16
申请人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L29/15 , C04B35/536 , H01L21/20
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，将凹陷区域图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

3. 发明授权

US06933235B2 Method for removing contaminants on a substrate 失效
标题翻译：去除基板上污染物的方法
公开(公告)号：US06933235B2
公开(公告)日：2005-08-23
申请号：US10302714
申请日：2002-11-21
申请人： Manuel A. Quevedo-Lopez , Robert M. Wallace , Mohamed El Bouanani , Bruce E. Gnade
发明人： Manuel A. Quevedo-Lopez , Robert M. Wallace , Mohamed El Bouanani , Bruce E. Gnade
IPC分类号： H01L21/268 , H01L21/28 , H01L21/306 , H01L21/311 , H01L21/316 , H01L21/32 , H01L29/51 , H01L21/302
CPC分类号： H01L21/02238 , H01L21/02052 , H01L21/2686 , H01L21/28185 , H01L21/28194 , H01L21/31116 , H01L21/31604 , H01L21/31645 , H01L21/31662 , H01L21/32 , H01L29/517 , H01L29/518
摘要： A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For example, the dielectric layer may be patterned using standard photolithographic techniques and etching. An oxide layer is then formed on the exposed surface of the substrate. The oxide layer may be formed using ozone that is generated using ultraviolet radiation. After the oxide layer is formed, it is removed using an etching process.
摘要翻译：公开了一种处理衬底的方法。该方法包括在衬底上沉积具有金属氧化物的电介质层。去除介电层的一部分以形成电介质结构，从而暴露衬底的表面。例如，可以使用标准光刻技术和蚀刻对电介质层进行图案化。然后在基板的暴露表面上形成氧化物层。可以使用使用紫外线辐射产生的臭氧形成氧化物层。在形成氧化物层之后，使用蚀刻工艺除去氧化物层。

4. 发明授权

US06897105B1 Method of forming metal oxide gate structures and capacitor electrodes 有权
标题翻译：形成金属氧化物栅极结构和电容器电极的方法
公开(公告)号：US06897105B1
公开(公告)日：2005-05-24
申请号：US09396642
申请日：1999-09-15
申请人： Glen D. Wilk , Robert M. Wallace , John M. Anthony , Paul McIntyre
发明人： Glen D. Wilk , Robert M. Wallace , John M. Anthony , Paul McIntyre
IPC分类号： H01L21/02 , H01L21/44 , H01L21/8242 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/1085 , H01L27/11507 , H01L28/60 , Y10S438/957
摘要： An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step 118 of FIG. 1) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step 116 of FIG. 1) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.
摘要翻译：本发明的一个实施例是形成从第二结构绝对地设置的导电结构的方法，所述方法包括：提供所述第二结构; 形成材料的导电结构（图1的步骤118），其在氧化之后保持基本导电; 在第二结构和导电结构之间形成电绝缘层（图1的步骤116）; 以及通过使其在含臭氧的气氛中持续一段时间并处于第一温度来氧化所述导电结构。

5. 发明授权

US06613698B2 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
公开(公告)号：US06613698B2
公开(公告)日：2003-09-02
申请号：US09859907
申请日：2001-05-17
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L21318
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

6. 发明授权

US6143634A Semiconductor process with deuterium predominance at high temperature 失效
标题翻译：半导体工艺在高温下具有氘优势
公开(公告)号：US6143634A
公开(公告)日：2000-11-07
申请号：US123828
申请日：1998-07-28
申请人： Robert M. Wallace , Peijun Chen
发明人： Robert M. Wallace , Peijun Chen
IPC分类号： H01L21/28 , H01L21/30 , H01L21/768 , H01L21/3205
CPC分类号： H01L21/76814 , H01L21/28176 , H01L21/28518 , H01L21/3003 , H01L21/76826 , H01L21/76843 , H01L21/76864 , H01L21/76879
摘要： Channel-hot-carrier reliability can be improved by deuterium passivation of the gate interface. By performing high temperature steps (above 300 degrees Celsius) in a deuterium-containing ambient, harmful depletion of deuterium due to diffusion away from the gate interface is avoided.
摘要翻译：通过栅极接口的氘钝化可以提高通道 - 热载体的可靠性。通过在含氘环境中进行高温步骤（高于300摄氏度），避免了由于扩散离开栅极界面而导致的氘的有害耗尽。

7. 发明授权

US5881505A Free-standing, prefabricated cremation memorial for cremation remains 失效
标题翻译：火葬自备的预制火葬纪念碑仍然存在
公开(公告)号：US5881505A
公开(公告)日：1999-03-16
申请号：US797256
申请日：1997-02-07
申请人： Alma J. Larkin, III , Robert M. Wallace
发明人： Alma J. Larkin, III , Robert M. Wallace
IPC分类号： E04H13/00
CPC分类号： E04H13/006
摘要： A free-standing cremation memorial for holding cremated remains has a plurality of chambers in a vertical portion of the structure as well as a number of chambers in the base unit. A base member prefabricated of aluminum framework with at least about 10 underground chambers is provided. An upright framework supported on said base in which a large number of niches is provided. A base member, which is supported on concrete footings, is a three-dimensional framework which provides support for the upright portion of the cremation memorial, which is also prefabricated framework.
摘要翻译：用于固定火化遗迹的独立的火葬纪念碑在该结构的垂直部分中具有多个室以及基座单元中的多个室。提供了具有至少约10个地下室的铝框架预制的基座构件。支撑在所述底座上的直立框架，其中设置有大量壁龛。一个支撑在混凝土基座上的基座是一个三维框架，为火葬纪念碑的直立部分提供支持，这也是预制框架。

8. 发明授权

US5610438A Micro-mechanical device with non-evaporable getter 失效
标题翻译：具有非蒸发吸气剂的微机械装置
公开(公告)号：US5610438A
公开(公告)日：1997-03-11
申请号：US401048
申请日：1995-03-08
申请人： Robert M. Wallace , Douglas A. Webb
发明人： Robert M. Wallace , Douglas A. Webb
IPC分类号： G02B26/08 , H01L23/18
CPC分类号： G02B26/0841
摘要： The present invention relates to micro-mechanical devices including actuators, motors and sensors with improved operating characteristics. A micro-mechanical device (10) comprising a DMD-type spatial light modulator with a getter (100) located within the package (52). The getter (100) is preferably specific to water, larger organic molecules, various gases, or other high surface energy substances. The getter is a non-evaporable getter (NEG) to permit the use of active metal getter systems without their evaporation on package surfaces.
摘要翻译：本发明涉及包括具有改进的操作特性的致动器，马达和传感器的微机械装置。一种微机械装置（10），包括具有位于所述封装（52）内的吸气剂（100）的DMD型空间光调制器。吸气剂（100）优选对水，较大的有机分子，各种气体或其它高表面能物质是特异性的。吸气剂是非蒸发性吸气剂（NEG），允许使用活性金属吸气剂系统，而不会在包装表面上蒸发。

9. 发明授权

US5606177A Silicon oxide resonant tunneling diode structure 失效
标题翻译：氧化硅谐振隧道二极管结构
公开(公告)号：US5606177A
公开(公告)日：1997-02-25
申请号：US349866
申请日：1994-12-06
申请人： Robert M. Wallace , Alan C. Seabaugh
发明人： Robert M. Wallace , Alan C. Seabaugh
IPC分类号： H01L29/872 , H01L21/329 , H01L29/06 , H01L29/47 , H01L29/66 , H01L29/88
CPC分类号： H01L29/882 , B82Y10/00 , B82Y30/00 , H01L29/66151
摘要： A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings (430) have an irregular (nonperiodic) shape.
摘要翻译：由硅量子阱（406）制成的具有氧化硅隧道势垒（404,408）的谐振隧穿二极管（400）。隧穿势垒具有尺寸小于扩散的电子波包的开口（430），以确保通过二极管的晶体取向而不影响隧道势垒高度，并且开口（430）具有不规则（非周期性）形状。

10. 发明授权

US06784507B2 Gate structure and method 有权
标题翻译：门结构和方法
公开(公告)号：US06784507B2
公开(公告)日：2004-08-31
申请号：US10259677
申请日：2002-09-27
申请人： Robert M. Wallace , Bruce E. Gnade
发明人： Robert M. Wallace , Bruce E. Gnade
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28008 , H01L21/28088 , H01L21/28114 , H01L21/28194 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823857 , H01L29/1054 , H01L29/42376 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： CMOS and BiCMOS structures with a silicate-germanate gate dielectric on SiGe PMOS areas and Si NMOS areas plus HBTs with Si—SiGe emitter-base junctions.
摘要翻译： CMOS和BiCMOS结构，在SiGe PMOS区域上具有硅酸盐 - 锗酸盐栅极电介质，Si NMOS区域加上具有Si-SiGe发射极基极结的HBT。

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