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1. 发明申请

US20080038996A1 POLISHING COMPOSITION FOR SEMICONDUCTOR WAFER, PRODUCTION METHOD THEREOF, AND POLISHING METHOD 审中-公开
标题翻译：半导体波片抛光组合物及其生产方法及抛光方法
公开(公告)号：US20080038996A1
公开(公告)日：2008-02-14
申请号：US11837734
申请日：2007-08-13
申请人： Kuniaki MAEJIMA , Shinsuke MIYABE , Masahiro IZUMI , Hiroaki TANAKA , Makiko KURODA
发明人： Kuniaki MAEJIMA , Shinsuke MIYABE , Masahiro IZUMI , Hiroaki TANAKA , Makiko KURODA
IPC分类号： B24B7/00 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/30625
摘要： A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25° C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.
摘要翻译：公开了一种含有胶体二氧化硅的半导体晶片用研磨用组合物，其中，由碱性硅酸盐水溶液和季铵碱除去碱而得到的活性硅酸水溶液制成胶体二氧化硅，并用季铵碱稳定化。抛光组合物不含碱金属。抛光组合物含有缓冲溶液，该缓冲溶液是25℃下pKa为8.0〜12.5的弱酸（pKa为酸解离常数的倒数的对数）和季铵碱的组合，并呈现缓冲液在pH8至pH11范围内的作用。

2. 发明申请

US20020182985A1 Polishing method for removing corner material from a semi-conductor wafer 失效
标题翻译：用于从半导体晶片去除角材料的抛光方法
公开(公告)号：US20020182985A1
公开(公告)日：2002-12-05
申请号：US10162225
申请日：2002-06-05
申请人： SPEEDFAM Co., Ltd.
发明人： Masami Shiino , Shinji Toda , Tomohiro Aizawa , Tsukasa Taniwaki
IPC分类号： B24B001/00
CPC分类号： B24B9/065 , B24B37/04
摘要： In the polishing apparatus, the rotating corner polishing member is positioned so that its edge is aligned with the edge of the insulation film, and a pressing means applied the corner polishing member to the metal film of the periphery thereof. The metal film is removed by the rotary driven polishing member and slurry supplied to the polishing area. The metal portion penetrated in the corner formed by the side wall of the insulation film and the surface of the semi-conductor wafer substrate that is extremely difficult to be removed by the conventional removal method, can be removed substantially completely.
摘要翻译：在抛光装置中，旋转角抛光构件被定位成使其边缘与绝缘膜的边缘对准，并且加压装置将拐角抛光构件施加到其周边的金属膜。通过旋转驱动的研磨部件除去金属膜，将浆料供给到研磨区域。渗透在由绝缘膜的侧壁形成的角部的金属部分和通过常规去除方法极难除去的半导体晶片基板的表面可以被基本上完全去除。

3. 发明授权

US11145492B2 Local dry etching apparatus 有权
公开(公告)号：US11145492B2
公开(公告)日：2021-10-12
申请号：US16584035
申请日：2019-09-26
申请人： SpeedFam Co., Ltd.
发明人： Yasushi Obara
IPC分类号： H01J37/32 , H01L21/67
摘要： A local dry etching apparatus includes a vacuum chamber that has a predetermined degree of vacuum therewithin, a nozzle including a first end and a second end, at least the first end of the nozzle open to the vacuum chamber, a discharge tube including a first end that is connected to the second end of the nozzle, a plasma generator provided in the discharge tube, an electromagnetic wave irradiation part configured to oscillate electromagnetic waves and connected to the discharge tube via the electromagnetic wave transmitter to introduce the oscillated electromagnetic waves to the plasma generator, and a spacer interposed between the nozzle and the discharge tube.

4. 发明申请

US20170278674A1 LOCAL DRY ETCHING APPARATUS 审中-公开
公开(公告)号：US20170278674A1
公开(公告)日：2017-09-28
申请号：US15463941
申请日：2017-03-20
申请人： SPEEDFAM Co., Ltd.
发明人： Yasushi OBARA
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32192 , H01J37/32229 , H01J37/32357 , H01J37/32366 , H01J37/32724 , H01J2237/334 , H01L21/67069
摘要： A local dry etching apparatus includes a vacuum chamber, a nozzle opened in the vacuum chamber, a discharge tube connected to the nozzle, a workpiece table disposed in the vacuum chamber for mounting a workpiece thereon, a table driving device, a table driving control device, an electromagnetic wave oscillator, a gas supply device for supplying a raw material gas to the discharge tube, a plasma generation portion formed in the discharge tube, and an electromagnetic wave transmission unit for irradiation of electromagnetic waves oscillated in the electromagnetic wave oscillator to the plasma generation portion, in which the nozzle and the discharge tube are composed of separate parts and a temperature adjusting unit is provided for adjusting the temperature of at least one of the nozzle and the discharge tube.

5. 发明申请

US20160104601A1 LOCAL DRY ETCHING APPARATUS 审中-公开
标题翻译：本地干燥装置
公开(公告)号：US20160104601A1
公开(公告)日：2016-04-14
申请号：US14876573
申请日：2015-10-06
申请人： SPEEDFAM Co., Ltd.
发明人： Yasushi OBARA
IPC分类号： H01J37/32
摘要： A local dry etching apparatus includes a single vacuum chamber, a plurality of gas introduction units each including a discharge tube having an injection port opened in the vacuum chamber, a single workpiece table disposed in the vacuum chamber and mounting a workpiece thereon, a table driving device, a table driving control device, a gas supply device for supplying raw material gases to the gas introduction units, a single electromagnetic wave oscillator, plasma generation portions each formed to each of the discharge tubes of the gas introduction units, and an electromagnetic wave transmission unit having an electromagnetic wave switching unit capable of switching an electromagnetic wave such that one of the plasma generation portions is irradiated with the electromagnetic wave, in which the respective gas introduction units inject plasma having different fabrication characteristics.
摘要翻译：局部干式蚀刻装置包括单个真空室，多个气体导入单元，每个气体导入单元包括具有在真空室中开口的注入口的排放管，设置在真空室中的单个工作台，并在其上安装工件，工作台驱动设备，台面驱动控制装置，用于向气体导入单元供给原料气体的气体供给装置，单个电磁波振荡器，各自形成于气体导入部的各放电管的等离子体产生部，以及电磁波传输单元具有能够切换电磁波的电磁波切换单元，使得等离子体产生部分之一被电磁波照射，其中各个气体引入单元注入具有不同制造特性的等离子体。

6. 发明申请

US20080287038A1 Polishing composition for semiconductor wafer, method for production thereof and polishing method 失效
标题翻译：半导体晶片抛光组合物及其制造方法及研磨方法
公开(公告)号：US20080287038A1
公开(公告)日：2008-11-20
申请号：US12153111
申请日：2008-05-14
申请人： Shinsuke Miyabe , Kuniaki Maejima , Masahiro Izumi , Hiroaki Tanaka
发明人： Shinsuke Miyabe , Kuniaki Maejima , Masahiro Izumi , Hiroaki Tanaka
IPC分类号： B24B1/00 , C09K3/14 , C08J5/14
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.
摘要翻译：本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法，和抛光方法。用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。

7. 发明申请

US20060194512A1 Thickness control method and double side polisher 失效
标题翻译：厚度控制方法和双面抛光机
公开(公告)号：US20060194512A1
公开(公告)日：2006-08-31
申请号：US11359451
申请日：2006-02-23
申请人： Hitoshi Nagayama , Yusuke Inoue
发明人： Hitoshi Nagayama , Yusuke Inoue
IPC分类号： B24B51/00
CPC分类号： B24B37/08 , B24B37/013 , B24B49/04 , B24B49/105
摘要： The object of the present invention is to provide a thickness control method for a double side polisher, accuracy of which is not affected by wearing of polishing pad and applicable to polishing of nonconductive work pieces. An eddy current sensor in a cavity of an upper polishing plate measures distance from the senor to the upper surface of carrier with holes for the work pieces being inserted respectively. The measured distance is successively monitored and polishing is stopped when the distance has become a predetermined value corresponding to target amount of material removal from the work piece.
摘要翻译：本发明的目的是提供一种双面抛光机的厚度控制方法，其精度不受抛光垫的磨损影响，适用于非导电工件的抛光。在上抛光板的空腔中的涡流传感器测量从传感器到载体的上表面的距离，分别插入用于工件的孔。当距离成为对应于从工件去除材料的目标量的预定值时，依次监视测量距离并抛光抛光。

8. 发明授权

US07094355B2 Local dry etching method 失效
标题翻译：局部干蚀刻法
公开(公告)号：US07094355B2
公开(公告)日：2006-08-22
申请号：US10623740
申请日：2003-07-22
申请人： Michihiko Yanagisawa , Tadayoshi Okuya
发明人： Michihiko Yanagisawa , Tadayoshi Okuya
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01L21/6708 , H01L21/31055 , H01L21/31056
摘要： This invention provides a local dry etching method comprising the step of removing an oxide film formed on the surface of a semiconductor water before unevenness on the semiconductor wafer is removed by scanning the surface of the semiconductor wafer at a controlled relative speed with a nozzle for applying a flow of activated species gas to the surface of the semiconductor wafer. The removal of this oxide film is carried out by widening an etching profile and a scan pitch and making the nozzle speed constant, and then flattening is carried out in the same local dry etching apparatus. For flattening, the nozzle speed is changed for each area according to initial unevenness.
摘要翻译：本发明提供了一种局部干式蚀刻方法，其包括以下步骤：通过用控制相对速度扫描半导体晶片的表面去除在半导体晶片上的不均匀之前形成在半导体水表面上的氧化膜，活化物质气体流到半导体晶片的表面。通过加深蚀刻轮廓和扫描间距并使喷嘴速度恒定，然后在相同的局部干法蚀刻装置中进行平坦化来进行该氧化膜的去除。为了平坦化，根据初始不均匀性，针对每个区域改变喷嘴速度。

9. 发明申请

US20030134570A1 Wafer edge polishing system 失效
标题翻译：晶圆抛光系统
公开(公告)号：US20030134570A1
公开(公告)日：2003-07-17
申请号：US10340668
申请日：2003-01-13
申请人： SPEEDFAM Co., Ltd.
发明人： Shunji Hakomori
IPC分类号： B24B049/00 , B24B007/19
CPC分类号： B24B9/065 , B24B49/00
摘要： Disclosed is a wafer edge polishing system which improves the throughput and reduces the average processing cost. The system incorporates a wafer inspection unit. A wafer is polished in a wafer edge polishing unit and carried by a carrier unit to the wafer inspection unit where the polished surfaces of the wafer is inspected, and if it is judged as poorly polished, it is re-carried to the wafer edge polishing unit by the carrier unit.
摘要翻译：公开了一种提高生产量并降低平均处理成本的晶片边缘抛光系统。该系统包含晶片检查单元。将晶片在晶片边缘抛光单元中抛光，并由承载单元承载在晶片检查单元上，在该晶圆检查单元中检查晶片的抛光表面，如果判断为抛光不良，则将其重新载入晶片边缘抛光单位由承运人单位。

10. 发明授权

US6110026A Carrier and polishing apparatus 失效
标题翻译：载体和抛光装置
公开(公告)号：US6110026A
公开(公告)日：2000-08-29
申请号：US275497
申请日：1999-03-24
申请人： Hatsuyuki Arai
发明人： Hatsuyuki Arai
IPC分类号： B24B37/30 , H01L21/304 , B24B1/00
CPC分类号： B24B37/30
摘要： A carrier and polishing apparatus enabling high precision polishing of a workpiece and enabling prevention of leak contamination and damage to the workpiece. A carrier 1 is provided with a carrier body 2, a pressure chamber 3, and a fluid passage portion 4 and a plurality of valve portions 5 are specially provided in the pressure chamber 3. Due to this, when the inside of the pressure chamber 3 becomes a negative pressure state, the valve portions 5 open and the wafer W is picked up by suction, while when it becomes a positive pressure state, the valve portions 5 close and the air in the pressure chamber 3 uniformly presses against the wafer W. Further, since the valve portions 5 close in the positive pressure state, the air in the pressure chamber 3 will not flow to the outside.
摘要翻译：载体和抛光装置能够对工件进行高精度抛光并且能够防止泄漏污染和损坏工件。载体1在压力室3中设置有载体主体2，压力室3和流体通道部分4以及多个阀部分5。由此，当压力室3的内部成为负压状态，阀部5打开，通过抽吸取出晶片W，而当成为正压状态时，阀部5关闭，压力室3内的空气均匀地压在晶片W上。此外，由于阀部5处于正压状态，压力室3内的空气不会流到外部。

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