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    • 6. 发明授权
    • LED package and backlight unit using the same
    • LED封装和背光单元使用相同
    • US08197090B2
    • 2012-06-12
    • US12832469
    • 2010-07-08
    • Dae Yeon KimYoung Sam Park
    • Dae Yeon KimYoung Sam Park
    • F21V5/04
    • H01L33/58H01L33/46
    • The invention relates to an LED package having a large beam angle of light emitted from an LED, simplifying a shape of a lens and an assembly process, and to a backlight unit using the same. The LED package includes a housing with a seating recess formed therein and at least one LED seated in the seating recess. The LED package also includes a lens having a predetermined sag on an upper side thereof, covering an upper part of the LED. The LED package and the backlight unit using the same can emit light uniformly without bright spots formed in an output screen, uses a simpler shaped lens with an increased beam angle, and minimizes a color mixing region to achieve miniaturization.
    • 本发明涉及一种LED封装,其具有从LED发射的大的光束角度,简化透镜的形状和组装过程,以及使用该LED封装的背光单元。 LED封装包括壳体,其具有形成在其中的座部凹部和位于座部凹部中的至少一个LED。 LED封装还包括在其上侧具有预定凹陷的透镜,覆盖LED的上部。 LED封装和使用该LED封装的背光单元可以均匀地发光而不会在输出屏幕中形成亮点,使用具有增大的光束角的更简单形状的透镜,并且使混色区域最小化以实现小型化。
    • 9. 发明授权
    • Nitride based semiconductor light emitting diode
    • 氮化物半导体发光二极管
    • US08168995B2
    • 2012-05-01
    • US11543231
    • 2006-10-05
    • Kun Yoo KoSeok Min HwangHyung Jin Park
    • Kun Yoo KoSeok Min HwangHyung Jin Park
    • H01L33/00
    • H01L33/38H01L33/20H01L33/32H01L2224/05552
    • A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
    • 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中,在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域,使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层,在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极,在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。