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1. 发明授权

US5235817A Cryogenic cooling apparatus for radiation detector 失效
标题翻译：用于辐射探测器的低温冷却装置
公开(公告)号：US5235817A
公开(公告)日：1993-08-17
申请号：US862050
申请日：1992-04-02
申请人： Brian W. Gallagher , Robert W. Bergensten
发明人： Brian W. Gallagher , Robert W. Bergensten
IPC分类号： F17C13/00 , F25D19/00
CPC分类号： F25D19/006 , F17C13/006 , F17C2203/03 , F17C2203/0643 , F17C2223/0161
摘要： Parallel heat paths are provided by three nested tubes, the outer tube being of stainless steel and connected cantilevered to a housing at ambient temperature. The innermost tube forms a cold finger having a negligible temperature gradient and secured in thermal conductive isolation concentrically within an intermediate cold sleeve tube which is also concentric within the outer tube, the cold finger and cold sleeve tubes being made of copper. The tubes have a minimum diameter and specular facing surfaces to minimize radiation coupling which is the major source of heat transfer between the tubes. The two inner tubes have minimum thermal conductive coupling via thermal insulating tapered rings at one end and a thermal insulating support at the other end. A radiation detector is secured to the inner cold finger tube for receiving X-ray radiation from a specimen in an electron microscope. The other ends of the two inner tubes ar thermally conductively connected to a heat sink Dewar via braided copper straps.
摘要翻译：平行的热路由三个嵌套管提供，外管为不锈钢，并在环境温度下悬臂连接到外壳。最内管形成具有可忽略的温度梯度的冷指，并且在热导隔离件中同心地固定在中间冷套管内，中间冷套管也在外管内同心，冷手套和冷套管由铜制成。管具有最小直径和镜面对面的表面，以最小化辐射耦合，这是管之间的热传递的主要来源。两个内管通过一端的隔热锥形环和另一端的绝热支撑件具有最小的热传导耦合。辐射检测器被固定到内部冷指管，用于在电子显微镜中从样本接收X射线辐射。两个内管的另一端通过编织铜带热导电地连接到散热器杜瓦。

2. 发明授权

US5204275A Method for fabricating compact bipolar transistor 失效
标题翻译：用于制作紧凑型双极晶体管的方法
公开(公告)号：US5204275A
公开(公告)日：1993-04-20
申请号：US633906
申请日：1990-12-26
申请人： Richard H. Lane
发明人： Richard H. Lane
IPC分类号： H01L29/73 , H01L21/285 , H01L21/331 , H01L21/60 , H01L29/417 , H01L29/732
CPC分类号： H01L21/76897 , H01L21/28525 , H01L29/41708 , H01L29/66272 , H01L29/7322 , Y10S148/01 , Y10S148/123
摘要： A process for fabricating a compact bipolar transistor structure is disclosed which eliminates the need for a field oxide isolation region between the collector contact region and emitter of the transistor. An island of non-monocrystalline silicon is formed on top of the transistor structure partially covering the base and collector contact regions. Ribbons of non-insulating material are formed along the sidewalls of the island. The ribbon over the base region is employed to form a narrow emitter region with an annealing step that drives dopant from the ribbon or island into the portion of the base region below the ribbon. An insulating layer is disposed between the transistor structure and the island and ribbon over the collector contact region to insulate the emitter from the collector. Insulating sidewall spacers are formed next to the sidewall ribbons to insulate silicide regions grown over the base region, island and collector contact region for the three transistor contacts.

3. 发明授权

US5132564A Bus driver circuit with low on-chip dissipation and/or pre-biasing of output terminal during live insertion 失效
标题翻译：在实际插入期间具有低片上放电和/或预放电输出端子的总线驱动电路
公开(公告)号：US5132564A
公开(公告)日：1992-07-21
申请号：US558935
申请日：1990-07-27
申请人： Thomas D. Fletcher , Emil N. Hahn
发明人： Thomas D. Fletcher , Emil N. Hahn
IPC分类号： H03K17/04 , H03K17/567 , H03K19/00 , H03K19/003 , H03K19/013 , H04L25/02
CPC分类号： H03K19/0136 , H03K19/001 , H03K19/00353
摘要： The driver circuit comprises drive means (Q2) for drawing an output current from a bus line (13) in a first state of the circuit. An output diode (S1) in the path of the output current is reverse biased in a second state of the circuit to isolate the drive means from the bus line. A control current (I.sub.Q2B) for the drive transistor is drawn from the bus line (13), beyond the output diode (S1). By this means, power dissipation (heat) within the driver circuit due to the control current is eliminated. The driver circuit also comprises means (26, S3, P1) for biasing the output during connection of the circuit to a live bus line, so as to reduce noise for other circuits connected to the bus line.

4. 外观设计

USD320441S Air cleaner 失效
公开(公告)号：USD320441S
公开(公告)日：1991-10-01
申请号：US456127
申请日：1989-12-21
申请人： Ronald L. Muller
设计人： Ronald L. Muller

5. 发明授权

US5048528A Alias suppression in pulsed doppler systems 失效
标题翻译：脉冲多普勒系统中的别名抑制
公开(公告)号：US5048528A
公开(公告)日：1991-09-17
申请号：US614351
申请日：1990-11-15
申请人： Laura Superina , Casper W. Barnes
发明人： Laura Superina , Casper W. Barnes
IPC分类号： G01P5/24 , G01S7/526 , G01S15/58 , G01S15/89
CPC分类号： G01S15/584 , G01P5/244 , G01S15/582
摘要： A Doppler velocity spectrum produced by radial projection in a two-dimensional Fourier frequency domain is processed to suppress alias spectral terms. The projected spectrum is divided into windows using an iterative algorithm which centers the spectral mean. The window containing data samples which maximizes a weighted score based upon the width and maximal value of samples within the window is used to determine which window contains true spectral components. Spectral components in other windows are then suppressed.

6. 发明授权

US4990464A Method of forming improved encapsulation layer 失效
标题翻译：形成改进封装层的方法
公开(公告)号：US4990464A
公开(公告)日：1991-02-05
申请号：US292606
申请日：1988-12-30
申请人： Helmut Baumgart , Andre Martinez
发明人： Helmut Baumgart , Andre Martinez
IPC分类号： H01L21/02 , H01L21/20 , H01L21/263 , H01L21/84 , H01L27/12
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S148/152 , Y10S148/154
摘要： An improved technique for forming silicon-on insulator films for use in integrated circuits. The technique provides an improved encapsulation layer to enable in a reproducible way the zone melt recrystallization of such films. The encapsulation layer consists of a first layer of a doped SiO.sub.2 (silicate glass) on which a further layer of Si.sub.3 N.sub.4 is deposited. The doped SiO.sub.2 forms a fusible glassy material which is rendered semi-liquid and flows at the temperatures used in recrystallization. The softening of the encapsulation material accommodates volume expansion and eliminates the biaxial stresses in the layered structure. The Si.sub.3 N.sub.4 layer adds mechanical strength to the SiO.sub.2 layer and improves the wetting angle.

7. 发明授权

US4958103A HID lamp with multiple discharge devices 失效
标题翻译： HID灯具有多个放电装置
公开(公告)号：US4958103A
公开(公告)日：1990-09-18
申请号：US289281
申请日：1988-12-21
申请人： Cornelis A. Jacobs , Norman R. King , Dale E. Bradham
发明人： Cornelis A. Jacobs , Norman R. King , Dale E. Bradham
IPC分类号： H01J61/54
CPC分类号： H01J61/54
摘要： A high intensity discharge lamp having a pair of discharge devices with one of them initially operative. The discharge devices are laterally adjacent with the higher temperature end of the operative discharge device proximate the lower temperature end of the inoperative discharge device for heating it during lamp operation. This facilitates starting of the inoperative discharge device after a momentary power interruption.
摘要翻译：一种具有一对放电装置的高强度放电灯，其中一个放电灯最初起作用。放电装置与操作性放电装置的较高温度端相邻，靠近不工作放电装置的较低温度端，用于在灯操作期间加热它。这有助于在瞬间断电后启动不工作的放电装置。

8. 发明授权

US4939408A High pressure sodium discharge reflector lamp 失效
标题翻译：高压钠放电反光灯
公开(公告)号：US4939408A
公开(公告)日：1990-07-03
申请号：US212811
申请日：1988-06-29
申请人： Ray G. Gibson, III
发明人： Ray G. Gibson, III
IPC分类号： H01J5/50 , H01J61/82
CPC分类号： H01J5/50 , H01J61/825
摘要： A high pressure sodium discharge reflector lamp having a blown glass outer envelope. The outer envelope contains a rare gas having a fill pressure slightly less than one atmosphere and a pressure at lamp operating temperature of approximately one atmosphere for implosion protection.
摘要翻译：一种具有吹制玻璃外壳的高压钠放电反射灯。外壳包含稀释气体，其填充压力略小于一个大气压，并且在灯工作温度约为一个大气压下用于内爆保护。

9. 发明授权

US4896058A TTL circuit having ramped current output 失效
标题翻译： TTL电路具有斜坡电流输出
公开(公告)号：US4896058A
公开(公告)日：1990-01-23
申请号：US186502
申请日：1988-04-26
申请人： Robert J. Murray
发明人： Robert J. Murray
IPC分类号： H03K17/16 , H03K19/003 , H03K19/088
CPC分类号： H03K19/00353 , H03K19/088
摘要： In conventional logic buffer circuits, internal signal overshoot during switching transitions causes power supply spikes or bounce, which may in turn degrade the operational reliability of other circuits in the same system. By using a pair of current amplifier circuits within the logic buffer circuit to shunt a portion of the signal overshoot, the output current of the logic buffer circuit is caused to change linearly with time, so that power supply bounce or spikes are substantially reduced.

10. 发明授权

US4893212A Protection of power integrated circuits against load voltage surges 失效
标题翻译：保护功率集成电路免受负载电压浪涌
公开(公告)号：US4893212A
公开(公告)日：1990-01-09
申请号：US288062
申请日：1988-12-20
申请人： Stephen L. Wong , Satyendranath Mukherjee
发明人： Stephen L. Wong , Satyendranath Mukherjee
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/088 , H01L29/78 , H03K17/0812 , H03K17/0814
CPC分类号： H01L27/0251 , H03K17/08122 , H03K17/08142
摘要： A power integrated-circuit device is protected against load voltage surges. This is done by providing an alternate current-carrying path that is activated only in response to the occurrence of such surges. This alternate path is independent of and separate from the connection that extends between the device and its power supply source. In addition, circuitry is connected to the device to limit the portion of the surge voltage that can appear across critical elements of the device.

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