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1. 发明授权

US11646285B2 Semiconductor package using core material for reverse reflow 有权
公开(公告)号：US11646285B2
公开(公告)日：2023-05-09
申请号：US17323705
申请日：2021-05-18
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol Son , Jeong Tak Moon , Jae Hun Song , Young Woo Lee , Seul Gi Lee , Min Su Park , Hui Joong Kim
IPC分类号： H01L23/00
CPC分类号： H01L24/13 , H01L24/05 , H01L24/81 , H01L2224/0401 , H01L2224/13147 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13669 , H01L2224/16014 , H01L2224/81815
摘要： Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

2. 发明授权

US10651463B2 Negative electrode active material and method of preparing the same 有权
公开(公告)号：US10651463B2
公开(公告)日：2020-05-12
申请号：US15602918
申请日：2017-05-23
申请人： SAMSUNG SDI CO., LTD. , MK ELECTRON CO., LTD. , INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY
发明人： Soonsung Suh , Jaehyuk Kim , Jaemyung Kim , Kibuem Kim , Jeongtae Kim , Seungwhan Lee , Yulsang Lee , Jongsoo Cho , Sunghwan Hong
IPC分类号： H01M4/38 , H01M4/134 , H01M10/0525 , B22D13/02 , B22D21/00 , B22F9/00 , B22F9/04 , C22C1/00 , C22C1/02 , C22C1/05 , C22C28/00 , H01M2/16 , H01M4/131 , H01M4/1395 , H01M4/505 , H01M4/525 , H01M4/62 , H01M4/66 , H01M4/04 , H01M4/1391 , H01M10/0568 , H01M10/0569 , H01M4/02
摘要： A negative electrode active material includes a silicon-based alloy represented by Si-M1-M2-C—B, wherein M1 and M2 are different from each other and are each independently selected from magnesium, aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, germanium, manganese, yttrium, zirconium, niobium, molybdenum, silver, tin, tantalum, and tungsten. In the silicon-based alloy, Si is in a range of about 50 at % to about 90 at %, M1 is in a range of about 10 at % to about 50 atom %, and M2 is in a range of 0 at % to about 10 at %, based on a total number of Si, M1, and M2 atoms. C is in a range of about 0.01 to about 30 parts by weight, and B is in a range of 0 to about 5 parts by weight, based on a total of 100 parts by weight of Si, M1, and M2.

3. 发明申请

US20160315040A1 CORE FOR REVERSE REFLOW, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE 审中-公开
标题翻译：反射反射芯片，半导体封装和制造半导体封装的方法
公开(公告)号：US20160315040A1
公开(公告)日：2016-10-27
申请号：US15134848
申请日：2016-04-21
申请人： MK Electron Co., Ltd.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Eung Jae KIM , Su-Yong RYU , Hui Joong KIM , Ho Gun CHA , Ik Joo MAENG , Chan Goo YOO
IPC分类号： H01L23/498 , H01L23/00 , H01L21/48
CPC分类号： H01L24/11 , H01L21/4853 , H01L23/49811 , H01L24/13 , H01L2224/11318 , H01L2224/11849 , H01L2224/13014 , H01L2224/13026 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13669 , H01L2224/48227 , H01L2924/014 , H01L2924/15311 , H01L2924/351
摘要： Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.
摘要翻译：提供了反向回流芯，半导体封装和制造半导体封装的方法。半导体封装包括：包括凸块焊盘的半导体装置; 以及接合到所述凸块焊盘的凸块部分。凸起部分包括：芯; 形成在所述芯上的金属间化合物层; 以及涂覆金属间化合物层的焊料层，其中焊料层的一部分的厚度随着焊料层的部分和凸块焊盘之间的距离增加而减小。反向回流芯，半导体封装以及制造半导体封装的方法能够制造具有高结合强度和高精度的半导体封装。

4. 发明授权

US09391039B2 Solder balls and semiconductor device employing the same 有权
标题翻译：焊球和采用该焊球的半导体器件
公开(公告)号：US09391039B2
公开(公告)日：2016-07-12
申请号：US14446788
申请日：2014-07-30
申请人： MK Electron Co., Ltd.
发明人： Jeong Tak Moon , Jae Yeol Son , Santosh Kumar , Eung Jae Kim , Hui Joong Kim , Ho Gun Cha
IPC分类号： H01L23/48 , H01L23/00 , H01B1/02
CPC分类号： H01L24/17 , H01B1/026 , H01L24/05 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/13012 , H01L2224/13016 , H01L2224/13111 , H01L2224/13647 , H01L2224/16113 , H01L2224/16157 , H01L2224/16225 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/207 , H01L2924/2075 , H01L2924/20751 , H01L2924/00014
摘要： A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
摘要翻译：提供了一种焊球和使用其的半导体器件。在其中在芯球上依次形成第一镀层和第二镀层的Sn基焊料球中，第二镀层包括Sn-Ag-Cu合金，Ag 3 Sn金属间化合物（IMC）纳米颗粒或Ag- Sn化合物纳米粒子存在于第二镀层中。焊球具有高球形度，隔离特性和连接可靠性，从而可以实现具有高集成度的半导体器件。

5. 发明授权

US09156111B2 Lead free solder bumps 有权
标题翻译：无铅焊料凸块
公开(公告)号：US09156111B2
公开(公告)日：2015-10-13
申请号：US14558089
申请日：2014-12-02
申请人： MK ELECTRON CO., LTD. , HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY , KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人： Sung Jae Hong , Keun Soo Kim , Chang Woo Lee , Jung Hwan Bang , Yong Ho Ko , Hyuck Mo Lee , Jae Won Chang , Ja Hyun Koo , Jeong Tak Moon , Young Woo Lee , Won Sik Hong , Hui Joong Kim , Jae Hong Lee
IPC分类号： H01L23/48 , H01L21/44 , B23K31/00 , B23K35/26 , B23K35/02 , H01L23/00 , B23K1/00
CPC分类号： B23K35/262 , B23K1/0016 , B23K35/025 , B23K2101/40 , B23K2101/42 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/13111 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01083 , H01L2924/014 , H01L2924/15747 , H01L2924/00
摘要： Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.
摘要翻译：提供了一种无铅焊料，焊膏和半导体器件，更具体地，包括在约0.1重量％至约0.8重量％范围内的Cu的无铅焊料，Pd在约0.001 重量％至约0.1重量％，Al在约0.001重量％至约0.1重量％的范围内，Si在约0.001重量％至约0.1重量％的范围内，Sn和不可避免的杂质作为余量，焊膏和包括无铅焊料的半导体器件。无铅焊料和焊膏环保，具有高温稳定性和高可靠性。

6. 发明申请

US20150151386A1 LEAD-FREE SOLDER, SOLDER PASTE AND SEMICONDUCTOR DEVICE 有权
标题翻译：无铅焊锡膏，焊膏和半导体器件
公开(公告)号：US20150151386A1
公开(公告)日：2015-06-04
申请号：US14558089
申请日：2014-12-02
申请人： MK ELECTRON CO., LTD. , HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY , KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人： Sung Jae HONG , Keun Soo KIM , Chang Woo LEE , Jung Hwan BANG , Yong Ho KO , Hyuck Mo LEE , Jae Won CHANG , Ja Hyun KOO , Jeong Tak MOON , Young Woo LEE , Won Sik HONG , Hui Joong KIM , Jae Hong LEE
IPC分类号： B23K35/26 , H01L23/00 , B23K35/02
CPC分类号： B23K35/262 , B23K1/0016 , B23K35/025 , B23K2101/40 , B23K2101/42 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/13111 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01083 , H01L2924/014 , H01L2924/15747 , H01L2924/00
摘要： Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.
摘要翻译：提供了一种无铅焊料，焊膏和半导体器件，更具体地，包括在约0.1重量％至约0.8重量％范围内的Cu的无铅焊料，Pd在约0.001 重量％至约0.1重量％，Al在约0.001重量％至约0.1重量％的范围内，Si在约0.001重量％至约0.1重量％的范围内，Sn和不可避免的杂质作为余量，焊膏和包括无铅焊料的半导体器件。无铅焊料和焊膏环保，具有高温稳定性和高可靠性。

7. 发明授权

US07250135B2 Pb-free solder alloy 有权
标题翻译：无铅焊料合金
公开(公告)号：US07250135B2
公开(公告)日：2007-07-31
申请号：US11252415
申请日：2005-10-18
申请人： Suk Joon Lim , Sang Wan Cho
发明人： Suk Joon Lim , Sang Wan Cho
IPC分类号： C22C13/00
CPC分类号： C22C13/00
摘要： Provided is a Pb-free solder alloy used for mounting electronic parts on a printed circuit board. The Pb-free solder alloy is highly resistant to oxidation and impact. The Pb-free solder alloy includes Ag of 2.8 wt % to 4.2 wt %, Cu of 0.3 wt % to 0.8 wt %, Ge of 0.0001 wt % to 0.01 wt %, In of 0.001 wt % to 0.2 wt %, and the balance of Sn. The Pb-free solder alloy having this composition also has a high shear strength and low brittleness factor after bonding. Thus, the Pb-free solder alloy has high quality mechanical properties, to form a high quality joint.
摘要翻译：提供了一种用于将电子部件安装在印刷电路板上的无铅焊料合金。无铅焊料合金高度耐氧化和冲击。无铅焊料合金包括2.8重量％〜4.2重量％的Ag，0.3重量％〜0.8重量％的Cu，0.0001重量％〜0.01重量％的Ge，0.001重量％〜0.2重量％的In，余量的Sn。具有该组成的无铅焊料合金也具有高的剪切强度和粘结后的低脆性系数。因此，无铅焊料合金具有高质量的机械性能，形成高质量的接头。

8. 发明申请

US20220212293A1 LEAD-FREE SOLDER ALLOY, SOLDER PASTE COMPRISING THE SAME, AND SEMICONDUCTOR DEVICE COMPRISING THE SAME 有权
公开(公告)号：US20220212293A1
公开(公告)日：2022-07-07
申请号：US17558989
申请日：2021-12-22
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Seul Gi LEE , Min Su PARK , Hui Joong KIM
IPC分类号： B23K35/26 , B23K35/02
摘要： A lead (Pb)-free, and silver (Ag)-free solder alloy includes a primary metallic element in a content of about 1.1 wt % to about 1.9 wt %, nickel(Ni) in a content of about 0.02 wt % to about 0.09 wt %, copper (Cu) in a content of about 0.2 wt % to about 0.9 wt %, and tin (Sn) and other unavoidable impurities in remaining balance, wherein the primary metallic element is at least one selected from the group including bismuth (Bi), chromium (Cr), indium (In), antimony (Sb), silicon (Si) and zinc (Zn).

9. 发明申请

US20210366858A1 SEMICONDUCTOR PACKAGE USING CORE MATERIAL FOR REVERSE REFLOW 有权
公开(公告)号：US20210366858A1
公开(公告)日：2021-11-25
申请号：US17323705
申请日：2021-05-18
申请人： MK ELECTRON CO., LTD.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Seul Gi LEE , Min Su PARK , Hui Joong KIM
IPC分类号： H01L23/00
摘要： Provided is a semiconductor package including a first bump pad on a first substrate, a second bump pad on a second substrate, a core material for reverse reflow between the first bump pad and the second bump pad, and a solder member forming a solder layer on the core material for reverse reflow. The solder member is in contact with the first bump pad and the second bump pad. Each of a first diameter of the first bump pad and a second diameter of the second bump pad is at least about 1.1 times greater than a third diameter of the core material for reverse reflow. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

10. 发明申请

US20180090756A1 NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY INCLUDING NEGATIVE ELECTRODE INCLUDING THE NEGATIVE ELECTRODE ACTIVE MATERIAL 审中-公开
公开(公告)号：US20180090756A1
公开(公告)日：2018-03-29
申请号：US15712548
申请日：2017-09-22
申请人： SAMSUNG SDI CO., LTD.
发明人： Hana YOO , Deokhyun KIM , Jaehyuk KIM , Soonsung SUH , Jaemyung KIM , Heesang JEON , Yungu CHO , Jongsoo CHO
IPC分类号： H01M4/38 , H01M4/505
CPC分类号： H01M4/386 , C22C22/00 , C22C29/00 , H01M4/133 , H01M4/134 , H01M4/38 , H01M4/505 , H01M4/58 , H01M10/052 , H01M10/0525 , H01M2004/027
摘要： A negative electrode active material for a lithium secondary battery including silicon (Si), manganese (Mn), Component A including at least one selected from iron (Fe), molybdenum (Mo), chromium (Cr), zinc (Zn), titanium (Ti), nickel (Ni), vanadium (V), tungsten (W), and yttrium (Y), and Component B including at least one selected from carbon (C), boron (B), oxygen (O), nitrogen (N), phosphorous (P), and sulfur (S), wherein a total amount of Si, Mn, and Component A is about 70 atom % or less, an amount of Component B is 30 atom % or more, and a total amount of Mn and Component A is in a range of about 10 atom % to about 35 atom %.

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