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1. 发明申请

US20230111798A1 LEAD-FREE SOLDER ALLOY AND METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME 有权
公开(公告)号：US20230111798A1
公开(公告)日：2023-04-13
申请号：US17959502
申请日：2022-10-04
申请人： MK ELECTRON CO., LTD.
发明人： Young Woo LEE , Seul Gi LEE , Hui Joong KIM , Jae Yool SON , Jae Hun SONG , Jeong Tak MOON
IPC分类号： B23K35/26 , C22C13/02
摘要： A lead-free solder alloy includes bismuth (Bi), content of which is equal to or greater than 56 wt % and equal to or less than 57.5 wt %, indium (In), content of which is equal to or greater than 0.05 wt % and equal to or less than 1.0 wt %, and the balance of tin (Sn) and another unavoidable impurity. The lead-free solder alloy of the disclosure may enable bonding with improved ductility and thermal shock reliability while not having a large melting point change compared to an Sn-58Bi alloy.

2. 发明申请

US20150072235A1 POWDER MANUFACTURING APPARATUS AND ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY MANUFACTURED BY THE APPARATUS 审中-公开
标题翻译：用于制造二次电池的粉末制造装置和阳极活性材料
公开(公告)号：US20150072235A1
公开(公告)日：2015-03-12
申请号：US14143277
申请日：2013-12-30
申请人： MK ELECTRON CO., LTD.
发明人： Soon Ho HONG , Jong Soo CHO , Hyung Ki AHN
IPC分类号： H01M4/134 , C23C4/10 , B02C23/00 , C23C4/12
CPC分类号： H01M4/134 , B02C4/02 , B02C23/00 , B02C23/18 , C23C4/067 , C23C4/123 , H01M4/38 , H01M4/386
摘要： Provided is an apparatus for manufacturing a powder alloy used as an anode active material of a secondary battery. The apparatus includes a nozzle unit for melting and spraying an alloy, a cooling unit for cooling down the alloy sprayed from the nozzle unit, a grinding unit for grinding the alloy cooled by the cooling unit, and a first chamber accommodating the nozzle unit, the cooling unit, and the grinding unit, and maintained to be a vacuum state.
摘要翻译：提供了用作二次电池的负极活性物质的粉末合金的制造装置。该装置包括用于熔融和喷射合金的喷嘴单元，用于冷却从喷嘴单元喷射的合金的冷却单元，用于研磨由冷却单元冷却的合金的研磨单元和容纳喷嘴单元的第一室，冷却单元和研磨单元，并保持为真空状态。

3. 发明申请

US20140284794A1 TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 审中-公开
标题翻译：基于TIN的焊枪和半导体封装，包括它
公开(公告)号：US20140284794A1
公开(公告)日：2014-09-25
申请号：US13818034
申请日：2012-11-07
申请人： MK ELECTRON CO., LTD.
发明人： Jae Hong Lee , II Ho Kim , Sung Jae Hong , Jeong Tak Moon
IPC分类号： B23K35/26 , H01L23/00
CPC分类号： B23K35/262 , B23K35/0244 , B23K35/26 , B23K2101/40 , H01L23/49816 , H01L24/13 , H01L24/73 , H01L2224/13111 , H01L2224/13639 , H01L2224/13647 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2924/014 , H01L2924/15311 , H05K3/3463 , H01L2224/73265 , H01L2224/32225 , H01L2924/00012 , H01L2924/00 , H01L2924/01047 , H01L2924/01029 , H01L2924/01083 , H01L2924/01028
摘要： A tin (Sn)-based solder ball having appropriate characteristics for electronic products and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.3 to 3.0 wt. % silver (Ag), about 0.4 to 0.8 wt. % copper (Cu), about 0.01 to 0.09 wt. % nickel (Ni), about 0.1% to 0.5 wt. % bismuth (Bi), and balance of tin (Sn) and unavoidable impurities.
摘要翻译：提供了一种具有适用于电子产品特性的锡（Sn）基焊料球和包括该锡球的半导体封装。锡基焊球包括约0.3至3.0wt。％银（Ag），约0.4至0.8wt。％铜（Cu），约0.01〜0.09重量％％镍（Ni），约0.1％至0.5％铋（Bi），锡（Sn）和不可避免的杂质的平衡。

4. 发明申请

US20130175688A1 TIN-BASED SOLDER BALL AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME 有权
标题翻译：基于TIN的焊枪和半导体封装，包括它
公开(公告)号：US20130175688A1
公开(公告)日：2013-07-11
申请号：US13714200
申请日：2012-12-13
申请人： MK ELECTRON CO., LTD.
发明人： Young Woo LEE , Im Bok LEE , Sung Jae HONG , Jeong Tak MOON
IPC分类号： B23K35/26 , H01L23/00
CPC分类号： B23K35/262 , C22C13/00 , H01L23/3128 , H01L23/49816 , H01L23/49866 , H01L24/10 , H01L24/13 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/13 , H01L2224/13111 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01327 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/01029 , H01L2924/01047 , H01L2924/01032 , H01L2924/01015 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A tin(Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver(Ag), about 0.1 to 1 wt. % copper(Cu), about 0.001 to 0.3 wt. % aluminum(Al), about 0.001% to 0.1 wt. % germanium(Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance.
摘要翻译：提供基于锡（Sn）的焊球和包括其的半导体封装。锡基焊球包括约0.2至4wt。％银（Ag），约0.1至1wt。％铜（Cu），约0.001〜0.3wt。％铝（Al），约0.001％至0.1％％锗（Ge），余量为锡和不可避免的杂质。锡基焊球具有高抗氧化性。

5. 发明申请

US20020005606A1 Apparatus for manufacturing solder balls 失效
标题翻译：焊球制造装置
公开(公告)号：US20020005606A1
公开(公告)日：2002-01-17
申请号：US09964305
申请日：2001-09-26
申请人： MK Electron Co., Ltd
发明人： Jin-Hyung Lee , Byung Chul Moon , Jin Lee , Jeong-Tak Moon , Chang-Rok Oh , Jae Gyu Nam
IPC分类号： C21C001/00 , C21B007/12 , B22D041/08
CPC分类号： B23K35/0244 , B22F1/0048 , B22F9/08 , B22F2009/086 , B22F2999/00 , Y10S75/953 , B22F2202/01
摘要： An apparatus for manufacturing solder balls including a tundish, a vibrator, a cooling liquid tank an inactive atmospheric chamber, a molten metal receiving tray, a ball collecting barrel, and a cooling liquid reservoir. The tundish has orifices at its bottom. The vibrator is immersed in the molten metal of the tundish and generates vibrations. The cooling liquid tank is situated under the tundish and is provided with a cooling liquid heater at its upper and middle outer surface, a cooling liquid cooler at its lower outer surface, and a cooling liquid discharge conduit at its top. The inactive atmospheric chamber is interposed between the bottom of the tundish and the op surface of the cooling liquid. The molten metal receiving tray is seated on a portion of the inactive atmospheric chamber and is horizontally movable. The ball collecting barrel is positioned under the cooling liquid tank and is provided with a cut-off valve at its top, a ball removing valve at its bottom, and a cooling liquid supply conduit at it s upper portion. The cooling liquid reservoir is situated under the ball collecting barrel, is provided with a ball collecting sieve at its inlet and is connected with the cooling liquid discharge conduit and the cooling liquid supply conduit.
摘要翻译：一种用于制造焊球的装置，包括中间包，振动器，冷却液罐，无效大气室，熔融金属接收盘，球收集筒和冷却液储存器。中间包底部有孔。振动器浸入中间包的熔融金属中并产生振动。冷却液箱位于中间包下方，在其上外中表面设有冷却液加热器，其下外表面设有冷却液冷却器，顶部设有冷却液排出管。惰性气体室介于中间包的底部和冷却液的操作表面之间。熔融金属接收托盘位于非活动大气室的一部分上并且可水平移动。集尘桶位于冷却液箱的下方，在其顶部设有截止阀，底部设有截流阀，其上部设有冷却液供给管。冷却液贮存器位于球收集筒下方，在其入口处设有球收集筛并与冷却液排出管道和冷却液供应管道连接。

6. 发明授权

US10651463B2 Negative electrode active material and method of preparing the same 有权
公开(公告)号：US10651463B2
公开(公告)日：2020-05-12
申请号：US15602918
申请日：2017-05-23
申请人： SAMSUNG SDI CO., LTD. , MK ELECTRON CO., LTD. , INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY
发明人： Soonsung Suh , Jaehyuk Kim , Jaemyung Kim , Kibuem Kim , Jeongtae Kim , Seungwhan Lee , Yulsang Lee , Jongsoo Cho , Sunghwan Hong
IPC分类号： H01M4/38 , H01M4/134 , H01M10/0525 , B22D13/02 , B22D21/00 , B22F9/00 , B22F9/04 , C22C1/00 , C22C1/02 , C22C1/05 , C22C28/00 , H01M2/16 , H01M4/131 , H01M4/1395 , H01M4/505 , H01M4/525 , H01M4/62 , H01M4/66 , H01M4/04 , H01M4/1391 , H01M10/0568 , H01M10/0569 , H01M4/02
摘要： A negative electrode active material includes a silicon-based alloy represented by Si-M1-M2-C—B, wherein M1 and M2 are different from each other and are each independently selected from magnesium, aluminum, titanium, vanadium, chromium, iron, cobalt, nickel, copper, zinc, gallium, germanium, manganese, yttrium, zirconium, niobium, molybdenum, silver, tin, tantalum, and tungsten. In the silicon-based alloy, Si is in a range of about 50 at % to about 90 at %, M1 is in a range of about 10 at % to about 50 atom %, and M2 is in a range of 0 at % to about 10 at %, based on a total number of Si, M1, and M2 atoms. C is in a range of about 0.01 to about 30 parts by weight, and B is in a range of 0 to about 5 parts by weight, based on a total of 100 parts by weight of Si, M1, and M2.

7. 发明申请

US20160315040A1 CORE FOR REVERSE REFLOW, SEMICONDUCTOR PACKAGE, AND METHOD OF FABRICATING SEMICONDUCTOR PACKAGE 审中-公开
标题翻译：反射反射芯片，半导体封装和制造半导体封装的方法
公开(公告)号：US20160315040A1
公开(公告)日：2016-10-27
申请号：US15134848
申请日：2016-04-21
申请人： MK Electron Co., Ltd.
发明人： Jae Yeol SON , Jeong Tak MOON , Jae Hun SONG , Young Woo LEE , Eung Jae KIM , Su-Yong RYU , Hui Joong KIM , Ho Gun CHA , Ik Joo MAENG , Chan Goo YOO
IPC分类号： H01L23/498 , H01L23/00 , H01L21/48
CPC分类号： H01L24/11 , H01L21/4853 , H01L23/49811 , H01L24/13 , H01L2224/11318 , H01L2224/11849 , H01L2224/13014 , H01L2224/13026 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13669 , H01L2224/48227 , H01L2924/014 , H01L2924/15311 , H01L2924/351
摘要： Provided are a reverse-reflow core, a semiconductor package, and a method of fabricating a semiconductor package. The semiconductor package includes: a semiconductor apparatus including a bump pad; and a bump portion bonded to the bump pad. The bump portion includes: a core; an intermetallic compound layer formed on the core; and a solder layer coating the intermetallic compound layer, wherein the thickness of a portion of the solder layer decreases as the distance between the portion of the solder layer and the bump pad increases. The reverse-reflow core, the semiconductor package, and the method of fabricating a semiconductor package enable the fabrication of a semiconductor package having high bonding strength and a high degree of precision.
摘要翻译：提供了反向回流芯，半导体封装和制造半导体封装的方法。半导体封装包括：包括凸块焊盘的半导体装置; 以及接合到所述凸块焊盘的凸块部分。凸起部分包括：芯; 形成在所述芯上的金属间化合物层; 以及涂覆金属间化合物层的焊料层，其中焊料层的一部分的厚度随着焊料层的部分和凸块焊盘之间的距离增加而减小。反向回流芯，半导体封装以及制造半导体封装的方法能够制造具有高结合强度和高精度的半导体封装。

8. 发明授权

US09391039B2 Solder balls and semiconductor device employing the same 有权
标题翻译：焊球和采用该焊球的半导体器件
公开(公告)号：US09391039B2
公开(公告)日：2016-07-12
申请号：US14446788
申请日：2014-07-30
申请人： MK Electron Co., Ltd.
发明人： Jeong Tak Moon , Jae Yeol Son , Santosh Kumar , Eung Jae Kim , Hui Joong Kim , Ho Gun Cha
IPC分类号： H01L23/48 , H01L23/00 , H01B1/02
CPC分类号： H01L24/17 , H01B1/026 , H01L24/05 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/13012 , H01L2224/13016 , H01L2224/13111 , H01L2224/13647 , H01L2224/16113 , H01L2224/16157 , H01L2224/16225 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/207 , H01L2924/2075 , H01L2924/20751 , H01L2924/00014
摘要： A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
摘要翻译：提供了一种焊球和使用其的半导体器件。在其中在芯球上依次形成第一镀层和第二镀层的Sn基焊料球中，第二镀层包括Sn-Ag-Cu合金，Ag 3 Sn金属间化合物（IMC）纳米颗粒或Ag- Sn化合物纳米粒子存在于第二镀层中。焊球具有高球形度，隔离特性和连接可靠性，从而可以实现具有高集成度的半导体器件。

9. 发明申请

US20150380373A1 SOLDER BALLS AND SEMICONDUCTOR DEVICE EMPLOYING THE SAME 有权
标题翻译：使用其的焊接棒和半导体器件
公开(公告)号：US20150380373A1
公开(公告)日：2015-12-31
申请号：US14446788
申请日：2014-07-30
申请人： MK Electron Co., Ltd.
发明人： Jeong Tak MOON , Jae Yeol SON , Santosh KUMAR , Eung Jae KIM , Hui Joong KIM , Ho Gun CHA
IPC分类号： H01L23/00 , H01B1/02
CPC分类号： H01L24/17 , H01B1/026 , H01L24/05 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/13012 , H01L2224/13016 , H01L2224/13111 , H01L2224/13647 , H01L2224/16113 , H01L2224/16157 , H01L2224/16225 , H01L2924/01029 , H01L2924/01047 , H01L2924/01327 , H01L2924/014 , H01L2924/207 , H01L2924/2075 , H01L2924/20751 , H01L2924/00014
摘要： A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
摘要翻译：提供了一种焊球和使用其的半导体器件。在其中在芯球上依次形成第一镀层和第二镀层的Sn基焊料球中，第二镀层包括Sn-Ag-Cu合金，Ag 3 Sn金属间化合物（IMC）纳米颗粒或Ag- Sn化合物纳米粒子存在于第二镀层中。焊球具有高球形度，隔离特性和连接可靠性，从而可以实现具有高集成度的半导体器件。

10. 发明授权

US09156111B2 Lead free solder bumps 有权
标题翻译：无铅焊料凸块
公开(公告)号：US09156111B2
公开(公告)日：2015-10-13
申请号：US14558089
申请日：2014-12-02
申请人： MK ELECTRON CO., LTD. , HOSEO UNIVERSITY ACADEMIC COOPERATION FOUNDATION , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY , KOREA ELECTRONICS TECHNOLOGY INSTITUTE
发明人： Sung Jae Hong , Keun Soo Kim , Chang Woo Lee , Jung Hwan Bang , Yong Ho Ko , Hyuck Mo Lee , Jae Won Chang , Ja Hyun Koo , Jeong Tak Moon , Young Woo Lee , Won Sik Hong , Hui Joong Kim , Jae Hong Lee
IPC分类号： H01L23/48 , H01L21/44 , B23K31/00 , B23K35/26 , B23K35/02 , H01L23/00 , B23K1/00
CPC分类号： B23K35/262 , B23K1/0016 , B23K35/025 , B23K2101/40 , B23K2101/42 , H01L24/13 , H01L24/16 , H01L24/17 , H01L2224/13111 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/81191 , H01L2224/81815 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01083 , H01L2924/014 , H01L2924/15747 , H01L2924/00
摘要： Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.
摘要翻译：提供了一种无铅焊料，焊膏和半导体器件，更具体地，包括在约0.1重量％至约0.8重量％范围内的Cu的无铅焊料，Pd在约0.001 重量％至约0.1重量％，Al在约0.001重量％至约0.1重量％的范围内，Si在约0.001重量％至约0.1重量％的范围内，Sn和不可避免的杂质作为余量，焊膏和包括无铅焊料的半导体器件。无铅焊料和焊膏环保，具有高温稳定性和高可靠性。

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