会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Mems electrostatically actuated optical display device and associated arrays
    • Mems静电驱动光学显示设备和相关阵列
    • US20040001033A1
    • 2004-01-01
    • US10184345
    • 2002-06-27
    • MCNC
    • Scott H. Goodwin-JohanssonBrian H. AugustineLindsey N. Yadon
    • G09G003/00
    • G02B26/0841G02B26/02G02B26/0866G09G3/3433G09G2300/0456
    • A simplified MEMS optical display device driven by electrostatic forces and associated arrays are provided for. The optical display device includes an optically transparent substrate, an optically transparent fixed electrode disposed on the substrate and a pigmented translucent film disposed on the substrate. A moveable optical shutter is affixed to the substrate and is generally aligned with the fixed electrode and the pigmented translucent film. The moveable optical shutter comprises an electrode element and a biasing element. In addition, a fixed portion attached to the substrate and a distal portion adjacent to the fixed portion defines the optical shutter. When an electrostatic voltage differential is established between the fixed electrode and the optical shutter electrode element the distal portion of the optical shutter will move to controllably regulate the pigmentation of an optical signal.
    • 提供了由静电力和相关阵列驱动的简化的MEMS光学显示装置。 光学显示装置包括光学透明基板,设置在基板上的光学透明固定电极和设置在基板上的着色半透明膜。 可移动的光学快门固定到基底上,并且与固定电极和着色的半透明膜大致对齐。 可移动光学快门包括电极元件和偏置元件。 此外,附接到基板的固定部分和与固定部分相邻的远侧部分限定光学快门。 当在固定电极和光学快门电极元件之间建立静电电压差时,光学快门的远端部分将移动以可控制地调节光学信号的着色。
    • 2. 发明申请
    • Sample analysis device having a eucentric goniometer and associated method
    • 具有偏心测角仪和相关方法的样品分析装置
    • US20030223111A1
    • 2003-12-04
    • US10160992
    • 2002-05-31
    • MCNC
    • Michael K. LamvikSonia GregoGary E. McGuire
    • G02B021/00G02B021/26
    • G02B21/26
    • A sample analysis device is provided, the device comprising a frame adapted to accept at least one analysis apparatus, with each analysis apparatus having an analysis distance associated therewith. A eucentric goniometer is operably engaged with the frame and is adapted to eucentrically support a sample at a eucentric point within a reference system defined by the eucentric goniometer. The reference system of the eucentric goniometer is independent of the analysis distance. An axial adjustment device is operably engaged with at least one of the frame and the eucentric goniometer and is configured to coincidentally position the eucentric point and the analysis distance for the respective analysis apparatus. An associated device and method are also provided.
    • 提供样品分析装置,所述装置包括适于接收至少一个分析装置的框架,每个分析装置具有与其相关联的分析距离。 偏心测角器与框架可操作地接合并且适于在由偏心测角器限定的参考系统内的中心点处以中心方式支撑样品。 偏心测角器的参考系统与分析距离无关。 轴向调节装置与框架和偏心测角器中的至少一个可操作地接合,并且被配置为使得相应分析装置的偏心点和分析距离重合。 还提供了相关的设备和方法。
    • 9. 发明授权
    • Self-aligned charge screen (SACS) field effect transistors and methods
    • 自对准电荷屏(SACS)场效应晶体管及方法
    • US5536959A
    • 1996-07-16
    • US303698
    • 1994-09-09
    • Mark D. Kellam
    • Mark D. Kellam
    • H01L21/336H01L29/10H01L29/78H01L29/76H01L21/265
    • H01L29/6659H01L29/1045H01L29/1083H01L29/6656H01L29/7833
    • A field effect transistor includes a pair of buried centroid regions in a semiconductor substrate at a predetermined depth from the substrate face and having a doping concentration opposite the source and drain regions. A gradient region surrounds each of the pair of buried centroid regions. The gradient regions have decreasing doping concentration in all directions away from the associated centroid region. Source and drain extension regions may also be provided. The buried centroid/gradient regions operate to screen charge on the source and drain regions facing the channel to prevent this charge from interacting with the channel. Short channel effects are thereby reduced or minimized. The threshold voltage of the device can also be adjusted without the need for threshold adjusting implants. The buried centroid/gradient regions and source and drain extension regions may be fabricated in a self-aligned process using the gate and gate sidewall spacers as a mask.
    • 场效应晶体管包括在距离衬底表面预定深度处的半导体衬底中的一对掩埋重心区域,并具有与源区和漏区相对的掺杂浓度。 一个梯度区围绕着一对掩埋的重心区域。 梯度区域在离相关重心区域的所有方向具有降低的掺杂浓度。 还可以提供源极和漏极延伸区域。 掩埋的质心/梯度区域用于屏蔽面向通道的源极和漏极区域上的电荷,以防止该电荷与沟道相互作用。 从而减少或最小化短信道效应。 也可以调节器件的阈值电压,而不需要阈值调整植入物。 掩埋的重心/梯度区域和源极和漏极延伸区域可以使用栅极和栅极侧壁间隔物作为掩模以自对准工艺制造。