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    • 2. 发明申请
    • X-RAY CT APPARATUS
    • X射线CT装置
    • US20140079178A1
    • 2014-03-20
    • US14110860
    • 2013-01-21
    • Kabushiki Kaisha ToshibaToshiba Medical Systems CorporationKabushiki Kaisha ToshibaToshiba Medical Systems Corpraration
    • Go Mukumoto
    • A61B6/00A61B6/03
    • A61B6/52A61B6/032A61B6/463A61B6/465A61B6/5235G06T11/008
    • An X-ray CT apparatus, which is capable of quickly acquiring information for determining whether further CT imaging is required, is provided. The X-ray CT apparatus according to the embodiment comprises a reconstruction processor, a setting unit, and a controller. The reconstruction processor carries out first reconstruction processing to be carried out at a first image thickness based on detection data to be sequentially acquired by X-ray scanning of the desired site of a subject, and second reconstruction processing to be carried out at a second image thickness based on all detection data acquired by the X-ray scanning. The setting unit sets the first image thickness based on the second image thickness set in advance. The controller allows the reconstruction processor to initiate the first reconstruction processing in parallel with the X-ray scanning at the set first image thickness and initiate the second reconstruction processing at the second image thickness once the first reconstruction processing is completed.
    • 提供了能够快速获取用于确定是否需要进一步CT成像的信息的X射线CT装置。 根据实施例的X射线CT装置包括重构处理器,设置单元和控制器。 重构处理器基于要通过对被摄体的期望位置的X射线扫描顺序获取的检测数据,以第一图像厚度进行第一重建处理,以及在第二图像处执行的第二重建处理 基于通过X射线扫描获取的所有检测数据的厚度。 设定单元基于预先设定的第二图像厚度设定第一图像厚度。 控制器允许重建处理器在设置的第一图像厚度处与X射线扫描并行地开始第一重建处理,并且一旦完成第一重建处理就开始第二重建处理。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20170077220A1
    • 2017-03-16
    • US15062207
    • 2016-03-07
    • KABUSHIKI KAISHA TOSHIBA
    • Ryoichi OHARATakao NODAYoichi HORI
    • H01L29/06H01L29/872H01L29/78H01L29/16
    • H01L29/0634H01L29/0615H01L29/0692H01L29/1608H01L29/32H01L29/7811H01L29/872
    • A semiconductor device includes a SiC layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the SiC layer and surrounding a portion of the first SiC region, a third SiC region of the second conductivity type in the SiC layer and surrounding the second SiC region, the third SiC region having an impurity concentration of the second conductivity type lower than that of the second SiC region, and a fourth SiC region of the second conductivity type in the SiC layer between the second SiC region and the third Sic region, the fourth SiC region having an impurity concentration of the second conductivity type higher than that of the second SiC region.
    • 半导体器件包括具有第一表面和第二表面的SiC层,与第一表面接触的第一电极,SiC层中的第一导电类型的第一SiC区域,第二导电类型的第二SiC区域 在SiC层中并且包围第一SiC区域的一部分,SiC层中的第二导电类型的第三SiC区域并且围绕第二SiC区域,具有低于第二导电类型的第二导电类型的第三导电类型的第三SiC区域 以及在第二SiC区域和第三Sic区域之间的SiC层中的第二导电类型的第四SiC区域,具有比第二SiC区域的第二导电类型的第二导电类型的杂质浓度高的第四SiC区域 SiC区域。