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1. 发明授权

US09085480B2 Method of manufacturing vitreous silica crucible 有权
标题翻译：石英玻璃坩埚的制造方法
公开(公告)号：US09085480B2
公开(公告)日：2015-07-21
申请号：US13337918
申请日：2011-12-27
申请人： Toshiaki Sudo , Eriko Suzuki
发明人： Toshiaki Sudo , Eriko Suzuki
IPC分类号： C03B20/00 , C03B19/09
CPC分类号： C03B19/095
摘要： There is provided a method of manufacturing a vitreous silica crucible having a suitably controlled inner surface property. The present invention provides a method of manufacturing a vitreous silica crucible by heating and fusing a silica powder layer in a rotating mold by arc discharge generated by carbon electrodes including: a preparation process for determining optimal fusing temperatures during heating and fusing the silica powder layer at plural points of different heights of the silica powder layer; a temperature measuring process for measuring actual temperatures during heating and fusing the silica powder layer at the plural points; a temperature controlling process for controlling the actual temperatures at the plural points so that the actual temperatures matches the optimal fusing temperatures at the respective points.
摘要翻译：提供了一种具有适当控制的内表面性能的石英玻璃坩埚的制造方法。本发明提供一种通过碳化硅电极产生的电弧放电加热熔融旋转模具中的二氧化硅粉末层而制造石英玻璃坩埚的方法，包括：在加热和熔融二氧化硅粉末层期间确定最佳定影温度的制备方法二氧化硅粉末层的不同高度的多个点; 用于在多个点加热和熔融二氧化硅粉末层期间测量实际温度的温度测量过程; 用于控制多个点处的实际温度的温度控制过程，使得实际温度与各个点处的最佳定影温度相匹配。

2. 发明授权

US08888915B2 High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot 有权
标题翻译：高纯玻璃石坩埚用于拉大直径单晶硅锭
公开(公告)号：US08888915B2
公开(公告)日：2014-11-18
申请号：US12325019
申请日：2008-11-28
申请人： Tadahiro Sato
发明人： Tadahiro Sato
IPC分类号： C30B35/00 , C03B19/09 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.
摘要翻译：具有高强度并用于拉伸大直径单晶硅锭的高纯度二氧化硅玻璃坩埚包括由气泡含量为1至10％的无定形二氧化硅玻璃构成的外层构成的双层压结构，纯度为99.99％以上，由无机石英玻璃构成的气泡含量为0.6％以下，纯度为99.99％以上的内层，高纯度玻璃体的上部开口端部分在拉制单晶硅锭的步骤中，硅熔体表面的引锭起始线与坩埚的上部开口端相当的部分为40〜100体积％，为晶体结构，结晶促进剂。

3. 发明授权

US08887374B2 Method of manufacturing fused silica crucible 有权
标题翻译：制造石英坩埚的方法
公开(公告)号：US08887374B2
公开(公告)日：2014-11-18
申请号：US13112580
申请日：2011-05-20
申请人： Takeshi Fujita , Masaki Morikawa
发明人： Takeshi Fujita , Masaki Morikawa
IPC分类号： H01S4/00 , C03B19/09 , H05B7/085 , C04B41/91 , C04B35/52 , C04B41/00 , C04B41/53
CPC分类号： C03B19/095 , C04B35/52 , C04B41/009 , C04B41/53 , C04B41/91 , C04B2235/72 , H05B7/085 , Y10T29/49002 , Y10T29/49117 , Y10T29/49204 , Y10T29/49206
摘要： Method of manufacturing a fused silica crucible, including manufacturing a plurality of carbon electrodes for melting a vitreous silica object to be melted by arc discharge by rubbing the surface of a carbon electrode of the electrodes with a vitreous silica of the same type as the vitreous silica object to be melted, by at least one of: inserting a front end of the carbon electrode into a storage tank storing powdered vitreous silica, by at least one of rotating and reciprocating in an axial direction the storage tank and the carbon electrode relative to each other; rubbing the surface of the carbon electrode by ejecting powdered vitreous silica from a nozzle onto the surface of the electrode; rubbing the surface of the electrode with a vitreous silica grinder; and rubbing the surface of the electrode against a rotating surface of a portion of a fused vitreous silica crucible.
摘要翻译：石英玻璃坩埚的制造方法，其特征在于，使用与所述玻璃状二氧化硅相同类型的玻璃状二氧化硅摩擦所述电极的碳电极的表面，制造多个用于熔融氧化硅玻璃物体的电弧放电熔化的碳电极通过以下至少一种方式，通过以下至少一种方式：通过沿着轴向方向旋转和往复运动的方式将碳电极的前端插入储存粉状玻璃状二氧化硅的储存罐中，至少一个相对于每个存储罐和碳电极其他; 通过将粉末状二氧化硅从喷嘴喷射到电极的表面上来摩擦碳电极的表面; 用石英砂磨机摩擦电极表面; 并且将电极的表面相对于熔融玻璃状石英坩埚的一部分的旋转表面摩擦。

4. 发明授权

US08806892B2 Method of manufacturing vitreous silica crucible 有权
标题翻译：石英玻璃坩埚的制造方法
公开(公告)号：US08806892B2
公开(公告)日：2014-08-19
申请号：US13337845
申请日：2011-12-27
申请人： Toshiaki Sudo , Eriko Suzuki
发明人： Toshiaki Sudo , Eriko Suzuki
IPC分类号： C03B19/09 , C03B20/00
CPC分类号： C03B19/095 , Y02P40/57
摘要： The present invention provides a method of manufacturing a vitreous silica crucible including: a silica powder supplying process of supplying a material silica powder into a mold for molding a crucible, to form a silica powder layer, and an arc fusing process of arc fusing the silica powder layer by arc discharge generated by carbon electrodes, wherein the arc fusing process includes processes of measuring a temperature of the silica powder layer, and controlling a vitreous silica fused state based on a reference temperature which is a temperature at a local maximum point which appears first in the arc fusing process.
摘要翻译：本发明提供一种石英玻璃坩埚的制造方法，其特征在于，包括：二氧化硅粉末供给工序，将二氧化硅粉末供给到用于成型坩埚的模具中，形成二氧化硅粉末层，以及电弧熔合二氧化硅由碳电极产生的电弧放电的粉末层，其中电弧熔合工艺包括测量二氧化硅粉末层的温度和基于作为出现的局部最大点处的温度的参考温度来控制氧化硅熔融状态的过程首先在电弧定影过程中。

5. 发明授权

US08769988B2 Method and apparatus for manufacturing vitreous silica crucible 有权
标题翻译：石英玻璃坩埚的制造方法和装置
公开(公告)号：US08769988B2
公开(公告)日：2014-07-08
申请号：US13308277
申请日：2011-11-30
申请人： Toshiaki Sudo , Hiroshi Kishi , Kouta Hasebe
发明人： Toshiaki Sudo , Hiroshi Kishi , Kouta Hasebe
IPC分类号： C03B19/09 , C03B29/02
CPC分类号： C03B19/095 , C03B29/02 , Y02P40/57
摘要： Provided is a method for manufacturing a vitreous silica crucible and a manufacturing apparatus for the same, which can reduce the amount of bubbles and impurities of a crucible inner surface and enhance a crystallization yield of silicon single crystal. A method for manufacturing a vitreous silica crucible of the invention includes a silica powder supplying process of supplying silica powder in a rotating mold to form a silica powder layer; an arc fusing process of fusing the silica powder layer by arc discharge generated by carbon electrodes; and a fire polishing process of throwing an arc flame toward a target surface of the silica powder layer for surface removal, wherein, in the fire polishing process, the distances from the tips of the carbon electrodes to the target surface is set to be equal.
摘要翻译：提供一种制造石英玻璃坩埚及其制造装置的方法，其可以减少坩埚内表面的气泡和杂质的量，并提高单晶硅的结晶产率。本发明的石英玻璃坩埚的制造方法包括在旋转模具中供给二氧化硅粉末以形成二氧化硅粉末层的二氧化硅粉末供给工序; 通过由碳电极产生的电弧放电使二氧化硅粉末层熔融的电弧熔合工艺; 以及向二氧化硅粉末层的靶表面投射弧形火焰以进行表面去除的火抛光处理，其中，在火焰研磨处理中，将从碳电极的前端到目标表面的距离设定为相等。

6. 发明授权

US08585346B2 Handling device and handling method of quartz glass crucible 有权
标题翻译：石英玻璃坩埚的处理装置及处理方法
公开(公告)号：US08585346B2
公开(公告)日：2013-11-19
申请号：US12804479
申请日：2010-07-21
申请人： Manabu Shonai , Taira Sato , Minoru Shirakawa , Hiroshi Takahashi , Shuichi Ikehata
发明人： Manabu Shonai , Taira Sato , Minoru Shirakawa , Hiroshi Takahashi , Shuichi Ikehata
IPC分类号： B23Q1/52 , B65G47/90
CPC分类号： B65G47/90 , B65G47/248 , C30B15/00 , C30B15/10 , C30B35/005
摘要： An object of the present invention is to provide a crucible handling device that can firmly sandwich and reliably move a quartz glass crucible under a clean environment and a method of handling a quartz glass crucible using the crucible handling device. The present invention provides a crucible handling device 1 for handling a quartz glass crucible 5, the device including: a frame 4 having a beam 2 extending in a horizontal direction and a pair of arms 3 protruding from the beam 2 in a direction perpendicular to a central axis line direction of the beam 2 such that at least one of the arms 3 is able to move in the central axis line direction of the beam 2; a pair of sandwiching means 6 assembled with the pair of the arm 3 to face each other, for sandwiching a body 50 of the quartz glass crucible 5 in a radial direction of the crucible; engagement means 7 provided adjacent to each sandwiching means 6 and formed by a pair of tongues 70 movable to approach or be separated from each other in a central axis direction of the crucible, for sandwiching and holding the quartz glass crucible 5 therebetween in the central axis direction of the crucible; and driving means 8 for causing the sandwiching means 6 and the engagement means 7 to reciprocate along the arm 3. The present invention also provides a method of handling a quartz glass crucible using such a device 1 as described above.
摘要翻译：本发明的目的在于提供一种能够在清洁环境下牢固地夹持和可靠地移动石英玻璃坩埚的坩埚处理装置以及使用坩埚处理装置处理石英玻璃坩埚的方法。本发明提供了一种用于处理石英玻璃坩埚5的坩埚处理装置1，该装置包括：框架4，其具有沿水平方向延伸的梁2和一对臂3，梁3沿垂直于水平方向的方向从梁2突出梁2的中心轴线方向使得臂3中的至少一个能够在梁2的中心轴线方向上移动; 一对夹持装置6与一对臂3组装成彼此面对，用于将石英玻璃坩埚5的主体50沿坩埚的径向夹持; 接合装置7设置在每个夹持装置6附近，并且由一对舌片70形成，舌片70可在坩埚的中心轴线方向上相互接近或分离，用于将石英玻璃坩埚5夹在中间轴线坩埚的方向; 以及用于使夹持装置6和接合装置7沿着臂3往复运动的驱动装置8.本发明还提供了使用如上所述的装置1来处理石英玻璃坩埚的方法。

7. 发明授权

US08562739B2 Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof 有权
标题翻译：用于提升硅单晶的硅玻璃坩埚及其制造方法
公开(公告)号：US08562739B2
公开(公告)日：2013-10-22
申请号：US12647634
申请日：2009-12-28
申请人： Kazuhiro Harada , Satoshi Kudo
发明人： Kazuhiro Harada , Satoshi Kudo
IPC分类号： C30B15/04
CPC分类号： C30B15/10
摘要： A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced.
摘要翻译：用于提取硅单晶并由原料由天然二氧化硅制成的二氧化硅玻璃坩埚设置有从坩埚底部的中心到内表面至多0.5mm深的一定范围内的区域，其基本上不包括气泡，其中包括在从坩埚的底部的中心到距内表面的0.5mm深的一定范围内的区域中的浓度的平均值为30ppm以上和150ppm以下。在以这种方式形成坩埚底部的内层的情况下，防止了内表面的凹陷，并且气泡的产生减少。

8. 发明授权

US08506890B2 Method for purification of silica particles, purifier, and purified silica particles 失效
标题翻译：纯化二氧化硅颗粒，净化剂和纯化二氧化硅颗粒的方法
公开(公告)号：US08506890B2
公开(公告)日：2013-08-13
申请号：US13047433
申请日：2011-03-14
申请人： Minoru Kanda , Yoshiyuki Tsuji
发明人： Minoru Kanda , Yoshiyuki Tsuji
IPC分类号： B01J8/24 , B01J19/08
CPC分类号： C01B33/18 , B01J8/1836 , B01J8/42 , B01J2208/00407 , B01J2208/00415 , B03C1/288 , B03C1/30 , B03C1/32 , B03C2201/16 , B03C2201/18 , C03C1/02
摘要： To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, an apparatus thereof, and a purified silica powder. A purification method of a silica powder comprises making a silica powder into a fluid state; contacting a purified gas to the silica powder in the fluid state at high temperature; and thereby removing impurity components of the silica powder. In the method, the silica powder in the fluid state is positioned in a magnetic field region. Further, the silica powder is contacted with the purified gas, while applying voltage to the silica powder by an electric field generated by moving of the silica powder. Preferably, the silica powder in a fluid state is positioned in the magnetic region of 10 gausses or more, and contacted with the purification gas at a temperature of I000° C. or more.
摘要翻译：为了提供具有优异的纯化效果的处理方法，其中可以在短时间内除去二氧化硅粉末中的高离子性的杂质，其装置和纯化的二氧化硅粉末。二氧化硅粉末的纯化方法包括将二氧化硅粉末制成流体状态; 在高温下将纯化气体以流体状态与二氧化硅粉末接触; 从而除去二氧化硅粉末的杂质成分。在该方法中，处于流体状态的二氧化硅粉末位于磁场区域中。此外，二氧化硅粉末与纯化气体接触，同时通过二氧化硅粉末移动产生的电场向二氧化硅粉末施加电压。优选地，处于流体状态的二氧化硅粉末位于10高斯或更高的磁性区域中，并且在1000℃以上的温度下与净化气体接触。

9. 发明授权

US08449352B2 Carbon electrode grinding apparatus 有权
标题翻译：碳电极研磨装置
公开(公告)号：US08449352B2
公开(公告)日：2013-05-28
申请号：US12687264
申请日：2010-01-14
申请人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
发明人： Masanori Fukui , Minoru Shirakawa , Tadashi Nemoto , Tadashi Sato
IPC分类号： B24B19/00
CPC分类号： C03B19/095 , B24B19/16 , H05B7/085
摘要： A carbon electrode grinding apparatus for shaping a front end of an arc discharge carbon electrode is provided with front end grinding blades configured to grind a front end surface of the carbon electrode, lateral surface grinding blades configured to grind a surface from the front end surface to a base end of the carbon electrode, and rotation means configured to rotate and drive the front end grinding blades and the lateral surface grinding blades around a rotation axis line coincident with an axis line of the carbon electrode.
摘要翻译：用于使电弧放电碳电极的前端成形的碳电极研磨装置设置有前端研磨刀片，其被配置为研磨碳电极的前端表面，侧面研磨刀片被构造成从前端表面研磨表面到碳电极的基端，以及旋转装置，被配置为围绕与碳电极的轴线重合的旋转轴线旋转并驱动前端研磨刀片和侧面研磨刀片。

10. 发明申请

US20120255487A1 VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：维生素二氧化硅可溶性及其制造方法
公开(公告)号：US20120255487A1
公开(公告)日：2012-10-11
申请号：US13145094
申请日：2010-12-14
申请人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
发明人： Toshiaki Sudo , Hiroshi Kishi , Eriko Suzuki
IPC分类号： C30B15/10 , C03B19/09
CPC分类号： C03B19/095 , C03C15/00 , C03C17/23 , C03C23/0025 , C03C23/007 , C03C2218/345 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.
摘要翻译：提供一种制造用于拉制硅单晶的石英玻璃坩埚的方法，其可以抑制填充在其中的硅熔体的熔融表面振动并且具有长的寿命。坩埚包括周壁部分，弯曲部分和底部部分，并且在周壁部分的内表面的特定区域上具有多个微凹部。

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