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    • 2. 发明申请
    • PLANAR OR TUBULAR SPUTTERING TARGET AND METHOD FOR THE PRODUCTION THEREOF
    • 平面或管状溅射目的及其生产方法
    • US20130264200A1
    • 2013-10-10
    • US13845594
    • 2013-03-18
    • HERAEUS MATERIALS TECHNOLOGY GMBH & CO. KG
    • Martin SCHLOTTSabine SCHNEIDER-BETZUwe KONIETZKAMarkus SCHULTHEISBen KAHLELars EBEL
    • C23C14/34
    • C23C14/3414C22C1/02C22C5/06H01J37/3414H01J37/3426
    • Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 m2 as a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 μm, an oxygen content of less than 50 wt.-ppm, a content of the impurity elements, aluminium, lithium, sodium, calcium, magnesium, barium, and chromium, each of less than 0.5 wt.-ppm, and a metallic purity of at least 99.99% by weight.
    • 已知由银基合金制成的平面或管状溅射靶和选自铟,锡,锑和铋的至少一种其它合金成分,重量份数为0.01〜5.0重量%。 然而,随着更大的目标,火花放电是明显的,并且经常导致损失,特别是在具有相对较小像素的大和高分辨率显示器的生产中。 为了制造基于这种类型的银合金的表面积大的溅射靶,其表面积大于0.3m2作为平面溅射靶,并且具有至少1.0m的长度作为管状溅射靶 ,并且其中火花放电的危险降低,因此具有较高功率密度的溅射工艺变得可行,本发明提出,银基合金具有平均晶粒尺寸小于120μm的晶体结构,氧 小于50重量ppm的含量,杂质元素,铝,锂,钠,钙,镁,钡和铬的含量小于0.5重量ppm,金属纯度至少为99.99 重量%。