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1. 发明申请

US20140238133A1 CAPACITANCE DETECTION CIRCUIT 有权
标题翻译：电容检测电路
公开(公告)号：US20140238133A1
公开(公告)日：2014-08-28
申请号：US14350807
申请日：2012-11-12
申请人： FUJI ELECTRIC CO., LTD.
发明人： Masami Kishiro
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01L9/12 , G01P15/18 , G01P2015/084 , G01R27/2605
摘要： A capacitance detection circuit inhibits noise. The capacitance detection circuit detects a change in capacitance between a pair of electrodes of a physical quantity sensor, with these electrodes generating the change in capacitance in response to a change in physical quantity. The capacitance detection circuit has a carrier signal generating circuit that supplies a carrier signal to one of the electrodes, an operational amplifier that has an inverting input terminal to which the other one of the electrodes is input, a dummy capacity that is connected in parallel to the pair of electrodes, and a carrier signal conditioning circuit that inverts a phase of a carrier signal supplied from the carrier signal generating circuit to the dummy capacity and adjusts a gain to inhibit the dummy capacity.
摘要翻译：电容检测电路抑制噪声。电容检测电路检测物理量传感器的一对电极之间的电容变化，这些电极响应于物理量的变化而产生电容的变化。电容检测电路具有载波信号发生电路，其向一个电极提供载波信号，具有输入另一个电极的反相输入端的运算放大器，并联连接的虚拟容量一对电极和载波信号调理电路，其将从载波信号发生电路提供的载波信号的相位反转到虚拟容量，并调整增益以抑制虚拟容量。

2. 发明申请

US20170243962A1 RB-IGBT 有权
公开(公告)号：US20170243962A1
公开(公告)日：2017-08-24
申请号：US15390680
申请日：2016-12-26
申请人： FUJI ELECTRIC CO., LTD.
发明人： Hong-fei LU
IPC分类号： H01L29/739 , H01L29/66 , H01L29/08 , H01L29/417 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7395 , H01L29/0619 , H01L29/0649 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/417 , H01L29/41708 , H01L29/66333 , H01L29/66348 , H01L29/7397
摘要： An RB-IGBT is provided that has a new emitter trench structure with improved breakdown voltage achieved by improving the electrical field distribution of the drift region. The RB-IGBT includes an isolation region having a first conductivity type on a side surface of a semiconductor substrate. The semiconductor substrate includes a drift region having a second conductivity type; a collector region having the first conductivity type and provided farther downward than the drift region; and an emitter trench portion provided extending to the drift region in a thickness direction from a front surface to a back surface of the semiconductor substrate. The emitter trench portion includes a trench electrode electrically connected to an emitter electrode provided above the semiconductor substrate; an upper trench insulating film directly contacting a bottom portion and side portions of the trench electrode; and a lower trench insulating film provided below the upper trench insulating film.

3. 发明公开

US20240290842A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240290842A1
公开(公告)日：2024-08-29
申请号：US18497427
申请日：2023-10-30
申请人： FUJI ELECTRIC CO., LTD.
发明人： Naoyuki OHSE
IPC分类号： H01L29/16 , H01L21/04 , H01L21/263 , H01L29/66 , H01L29/78
CPC分类号： H01L29/1608 , H01L21/0485 , H01L21/2636 , H01L29/66068 , H01L29/66734 , H01L29/7813
摘要： A silicon carbide semiconductor device includes a starting substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a gate insulating film, a gate electrode, an interlayer insulating film, an ohmic electrode, a barrier metal provided at the surface of the ohmic electrode and the surface of the interlayer insulating film, a surface electrode provided at the surface of the barrier metal, and a back electrode. The barrier metal has a three-layered structure including a first TiN film, a Ti film, and a second TiN film; the first TiN film contains TiN having a crystal grain size that is larger than a crystal grain size of TiN of the second TiN film.

4. 发明公开

US20240290663A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240290663A1
公开(公告)日：2024-08-29
申请号：US18398561
申请日：2023-12-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tatsuya HASHIMOTO , Kazuhiro KITAHARA , Noriaki NOJI , Ryota KATAOKA , Naoko KODAMA , Shunya HAYASHIDA
IPC分类号： H01L21/66 , H01L21/78 , H01L29/40 , H01L29/66
CPC分类号： H01L22/12 , H01L21/78 , H01L29/401 , H01L29/66348
摘要： A method of manufacturing a semiconductor device, including: forming a surface structure including a metal oxide semiconductor structure in a semiconductor substrate; forming an interlayer insulating film covering the surface structure; forming, in the interlayer insulating film, a contact hole to expose the surface structure; forming a first Al alloy film in contact with the surface structure and covering an entire surface of the interlayer insulating film, the first Al alloy film having a thickness of 0.05 μm to 0.5 μm; detecting, using a dark field, a defect of a surface of the first Al alloy film; forming a second Al alloy film covering the entire surface of the first Al alloy film; patterning the first and second Al alloy films; annealing the first and second Al alloy films; and dicing the semiconductor substrate into a plurality of chips, and picking, among the plurality of chips, chips free of the detected defect.

5. 发明授权

US12074091B2 Semiconductor device with cooler including heat dissipating substrate having a plurality of fins bonded to reinforcing plate 有权
公开(公告)号：US12074091B2
公开(公告)日：2024-08-27
申请号：US17538829
申请日：2021-11-30
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takahiro Koyama , Hiromichi Gohara
IPC分类号： H01L23/473 , H01L25/07
CPC分类号： H01L23/473 , H01L25/072
摘要： A semiconductor device includes an insulating substrate, semiconductor elements mounted on the insulating substrate, and a cooler for cooling the semiconductor elements. The cooler includes a heat dissipating substrate having bonding and heat dissipating surfaces opposite to each other, the bonding surface being bonded to the second surface of the insulating substrate, a plurality of fins on the heat dissipating surface, a reinforcing plate having first and second surfaces opposite to each other and covering the fins, the first surface being bonded to tips of the fins, and a cooling case including a recessed part to house the fins and reinforcing plate. A first gap between two adjacent fins, measured in a direction parallel to the heat dissipating substrate, is larger than a second gap between the reinforcing plate and a bottom of the first recessed part, measured in a thickness direction.

6. 发明授权

US12072155B2 Heat exchanger having cured edge 有权
公开(公告)号：US12072155B2
公开(公告)日：2024-08-27
申请号：US17472509
申请日：2021-09-10
申请人： NIPPON LIGHT METAL COMPANY, LTD. , FUJI ELECTRIC CO., LTD. , KOJIN CO., LTD.
发明人： Akihito Aoki , Eiji Anzai , Yoshinari Ikeda , Hiromichi Gohara , Ryoichi Kato , Michihiro Inaba , Tetsuya Sunago
IPC分类号： F28F9/02 , F28F1/02 , H01L23/367
CPC分类号： F28F9/0246 , F28F1/02 , H01L23/367
摘要： A cooling device includes a body having a flow passage for a heating medium that passes through the body, a first header made of a resin that has an inlet and covers a first end, and a second header made of a resin that has an outlet and covers a second end. The body has a front face, a back face, a first side face, and a second side face. The body and the first header are bonded to a first bonding face, a second bonding face, a third bonding face, and a fourth bonding face. The third bonding face is a curved surface that protrudes toward a +Y side. The fourth bonding face is a curved surface that protrudes toward a −Y side.

7. 发明公开

US20240282744A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240282744A1
公开(公告)日：2024-08-22
申请号：US18397756
申请日：2023-12-27
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takafumi YAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/40 , H01L24/37 , H01L23/49838 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/05553 , H01L2224/0603 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29117 , H01L2224/29118 , H01L2224/2912 , H01L2224/29123 , H01L2224/29124 , H01L2224/29138 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/29157 , H01L2224/29166 , H01L2224/2917 , H01L2224/32227 , H01L2224/3701 , H01L2224/37124 , H01L2224/37147 , H01L2224/37655 , H01L2224/37663 , H01L2224/40106 , H01L2224/40227 , H01L2224/40499 , H01L2224/45124 , H01L2224/45147 , H01L2224/48227 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/0104 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01083 , H01L2924/0132 , H01L2924/10253 , H01L2924/10272 , H01L2924/12031 , H01L2924/12032 , H01L2924/13055 , H01L2924/13091
摘要： A semiconductor device includes a semiconductor chip including an upper electrode, a lead frame having a bonding part and a rising part, and a bonding member joining the upper electrode to the bonding part. The upper electrode has electrode lateral surfaces including a first lateral surface. The bonding part has a bonding front surface and terminal lateral surfaces that include a second lateral surface. The bonding part is joined to the upper electrode such that the second lateral surface faces the first lateral surface. The rising part extends upward from the first lateral surface. In a direction parallel to the electrode front surface, a first shortest distance between a center of the electrode front surface in a plan view and the second lateral surface is equal to or greater than 40% of a second shortest distance between the first lateral surface and the second lateral surface.

8. 发明授权

US12068676B2 Switching control circuit for overcurrent protection, and semiconductor device containing the same 有权
公开(公告)号：US12068676B2
公开(公告)日：2024-08-20
申请号：US17559574
申请日：2021-12-22
申请人： FUJI ELECTRIC CO., LTD.
发明人： Akira Nakamori
IPC分类号： H02M1/08 , H02M1/00 , H02M1/32 , H02M7/5387 , H03K17/082
CPC分类号： H02M1/08 , H02M1/0009 , H02M1/32 , H02M7/53871 , H03K17/0828
摘要： A switching control circuit configured to control a switching device. The switching control circuit includes a detection circuit configured to detect whether a current flowing through the switching device is in an overcurrent state, a first signal output circuit configured to output a first signal indicating whether a time period of the overcurrent state is longer than a first time period, and a driving circuit. The driving circuit turns on the switching device based on a first input signal. The driving circuit turns off the switching device through a first switch based on a second input signal when the time period of the overcurrent state is shorter than the first time period, and through a second switch, having a greater on-resistance than the first switch, based on the second input signal and the first signal when the time period of the overcurrent state is longer than the first time period.

9. 发明授权

US12068268B2 Semiconductor device having a wire bonding pad structure connected through vias to lower wiring 有权
公开(公告)号：US12068268B2
公开(公告)日：2024-08-20
申请号：US18169889
申请日：2023-02-16
申请人： FUJI ELECTRIC CO., LTD.
发明人： Morio Iwamizu
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L24/45 , H01L2224/02205 , H01L2224/02381 , H01L2224/04042 , H01L2224/05647 , H01L2224/4847 , H01L2224/48647
摘要： A semiconductor device includes first conductive films that are provided, above a semiconductor substrate, at least on both sides of a non-formation region in which the first conductive films are not provided; an interlayer dielectric film including a first portion that is provided on the non-formation region, second portions provided above the first conductive film on both sides of the non-formation region, and a step portion that connects the first portion and the second portions; a second conductive film provided above the interlayer dielectric film; through terminal portions that penetrate the second portions of the interlayer dielectric film; and a wire bonded with the second conductive film above the first portion, where the through terminal portions include one or more first through terminal portions and one or more second through terminal portions being provided at positions opposite to each other with a bonded portion of the wire being interposed therebetween.

10. 发明授权

US12062976B2 Power supply circuit and power supply device 有权
公开(公告)号：US12062976B2
公开(公告)日：2024-08-13
申请号：US17703486
申请日：2022-03-24
申请人： FUJI ELECTRIC CO., LTD.
发明人： Yoshinori Kobayashi , Masayuki Yamadaya , Hironobu Shiroyama , Toshimitsu Morimoto
IPC分类号： H02M1/42 , H02M1/08 , H02M3/335 , H04N5/63
CPC分类号： H02M1/4225 , H02M1/08 , H02M3/33571 , H04N5/63
摘要： A power supply circuit of a step-down type, configured to generate an output voltage at a predetermined level from an alternating current (AC) voltage. The power supply circuit includes a rectifier circuit configured to rectify the AC voltage, a first line coupled to the rectifier circuit, a second line on a ground side, a switch coupled between the first line and the second line, and a control circuit configured to control the switch to bring a level of the output voltage to the predetermined level. The power supply circuit is free of an inductor interposed between the first line and the rectifier circuit.

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