专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130275083A1 APPARATUS AND METHOD FOR MEASURING THICKNESS OF PRINTED CIRCUIT BOARD 审中-公开
标题翻译：用于测量印刷电路板厚度的装置和方法
公开(公告)号：US20130275083A1
公开(公告)日：2013-10-17
申请号：US13447490
申请日：2012-04-16
申请人： Jin JEONG
发明人： Jin JEONG
IPC分类号： G01N27/02 , G01B17/02 , G06F15/00
CPC分类号： G01B7/06
摘要： An apparatus for measuring a thickness of at least one insulating layer of a printed circuit board (PCB), the at least one insulating layer having a transmission line located thereon. The apparatus includes an impedance measurement unit configured to input a plurality of input signals to the transmission line, each of the input signals having a respective frequency, to receive output signals from the transmission line, and to determine impedance values of the at least one insulating layer based on the input signals and the output signals; and a thickness calculation unit configured to calculate a thickness of the at least one insulating layer based on the impedance values.
摘要翻译：一种用于测量印刷电路板（PCB）的至少一个绝缘层的厚度的装置，所述至少一个绝缘层具有位于其上的传输线。该装置包括：阻抗测量单元，被配置为向传输线输入多个输入信号，每个输入信号具有相应的频率，以接收来自传输线的输出信号，并确定至少一个绝缘体的阻抗值基于输入信号和输出信号的层; 以及厚度计算单元，被配置为基于所述阻抗值来计算所述至少一个绝缘层的厚度。

2. 发明申请

US20130106248A1 BULK ACOUSTIC RESONATOR COMPRISING PIEZOELECTRIC LAYER AND INVERSE PIEZOELECTRIC LAYER 有权
标题翻译：包含压电层和反向压电层的大容量谐振谐振器
公开(公告)号：US20130106248A1
公开(公告)日：2013-05-02
申请号：US13286051
申请日：2011-10-31
申请人： Dariusz BURAK , Kevin J. GRANNEN , John D. LARSON, III , Alexandre SHIRAKAWA
发明人： Dariusz BURAK , Kevin J. GRANNEN , John D. LARSON, III , Alexandre SHIRAKAWA
IPC分类号： H01L41/083 , H01L41/187
CPC分类号： H03H9/587 , H03H9/02015 , H03H9/132 , H03H9/173 , H03H9/584
摘要： In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a first electrode disposed over a substrate; a first piezoelectric layer disposed over the first electrode, the first piezoelectric layer having a first c-axis oriented along a first direction; a second electrode disposed over the first piezoelectric layer; and a second piezoelectric layer disposed over the first electrode and adjacent to the first piezoelectric layer, wherein the second piezoelectric layer has a second c-axis oriented in a second direction that is substantially antiparallel to the first direction.
摘要翻译：在代表性实施例中，体声波（BAW）谐振器包括：设置在基板上的第一电极; 设置在所述第一电极上的第一压电层，所述第一压电层具有沿着第一方向取向的第一c轴; 设置在所述第一压电层上的第二电极; 以及第二压电层，其设置在所述第一电极上并且邻近所述第一压电层，其中所述第二压电层具有在与所述第一方向基本上反平行的第二方向上定向的第二c轴。

3. 发明申请

US20130049888A1 ACOUSTIC RESONATOR FORMED ON A PEDESTAL 有权
标题翻译：在PEDESTAL上形成的声学谐振器
公开(公告)号：US20130049888A1
公开(公告)日：2013-02-28
申请号：US13216633
申请日：2011-08-24
申请人： Richard C. RUBY
发明人： Richard C. RUBY
IPC分类号： H03H9/54 , H01F41/00 , H01L41/22
CPC分类号： H03H3/04 , H03H9/02047 , H03H9/02102 , H03H9/02133 , H03H9/0514 , H03H9/172 , Y10T29/42 , Y10T29/49005 , Y10T29/4908
摘要： An acoustic resonator structure comprises a substrate having a trench, a conductive pattern formed in the trench, a pillar formed within the trench, and an acoustic resonator supported at a central location by the pillar and suspended over the trench.
摘要翻译：声谐振器结构包括具有沟槽的衬底，形成在沟槽中的导电图案，形成在沟槽内的柱状体，以及由中心位置由柱支撑并悬挂在沟槽上的声谐振器。

4. 发明授权

US08356517B2 Integrated optical and acoustic transducer device 有权
标题翻译：集成光学和声学传感器装置
公开(公告)号：US08356517B2
公开(公告)日：2013-01-22
申请号：US12711626
申请日：2010-02-24
申请人： Osvaldo Buccafusca , David Martin
发明人： Osvaldo Buccafusca , David Martin
IPC分类号： G01N29/24 , G01N21/01 , G01N29/34
CPC分类号： G01H9/00
摘要： An integrated transducer device includes an optical transducer and an acoustic transducer integrally joined with the optical transducer. The acoustic transducer includes a membrane responsive to acoustic signals, the membrane being aligned with the optical transducer such that optical signals emitted or received by the optical transducer pass through the membrane. A propagation direction of the acoustic signals emitted or received by the acoustic transducer is collinear with a propagation direction of the optical signals emitted or received by the optical transducer.
摘要翻译：集成换能器装置包括光学换能器和与光学换能器整体连接的声换能器。声换能器包括响应于声信号的膜，膜与光学换能器对准，使得由光学换能器发射或接收的光信号通过膜。由声换能器发射或接收的声信号的传播方向与由光学换能器发射或接收的光信号的传播方向共线。

5. 发明授权

US08344504B2 Semiconductor structure comprising pillar and moisture barrier 有权
标题翻译：半导体结构包括柱和防潮层
公开(公告)号：US08344504B2
公开(公告)日：2013-01-01
申请号：US13075493
申请日：2011-03-30
申请人： James Wholey , Ray Parkhurst
发明人： James Wholey , Ray Parkhurst
IPC分类号： H01L23/04 , H01L23/52
CPC分类号： H01L23/367 , H01L23/3677 , H01L23/4824 , H01L29/7371 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A semiconductor structure includes multiple semiconductor devices on a substrate and a metal layer disposed over the semiconductor devices, the metal layer comprising at least a first trace and a second trace. A conductive pillar is disposed directly on and in electrical contact with the first trace of the metal layer, and a dielectric layer is selectively disposed between the metal layer and the conductive pillar, where the dielectric layer electrically isolates the second trace from the pillar. A moisture barrier surrounds the semiconductor devices around a periphery of the semiconductor structure, and extends from the substrate through the dielectric layer to the conductive pillar.
摘要翻译：半导体结构包括在衬底上的多个半导体器件和设置在半导体器件上的金属层，金属层至少包括第一迹线和第二迹线。导电柱直接设置在金属层的第一迹线上并与之接触，并且介电层选择性地设置在金属层和导电柱之间，其中介电层将第二迹线与柱分离。湿气屏障围绕半导体结构的周边围绕半导体器件，并且从衬底延伸穿过电介质层到导电柱。

6. 发明授权

US08314472B2 Semiconductor structure comprising pillar 有权
标题翻译：包括柱的半导体结构
公开(公告)号：US08314472B2
公开(公告)日：2012-11-20
申请号：US12846060
申请日：2010-07-29
申请人： Ray Parkhurst , Tarak Railkar , William Snodgrass
发明人： Ray Parkhurst , Tarak Railkar , William Snodgrass
IPC分类号： H01L21/70
CPC分类号： H01L23/4824 , H01L23/367 , H01L23/3677 , H01L29/7371 , H01L29/78 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A semiconductor structure comprises a substrate and a metal layer disposed over the substrate. The metal layer comprises a first electrical trace and a second electrical trace. The semiconductor structure comprises a conductive pillar disposed directly on and in electrical contact with the first electrical trace; and a dielectric layer selectively disposed between the metal layer and the conductive pillar. The dielectric layer electrically isolates the second electrical trace from the pillar.
摘要翻译：半导体结构包括衬底和设置在衬底上的金属层。金属层包括第一电迹线和第二电迹线。半导体结构包括直接设置在第一电迹线上并与之电接触的导电柱; 以及选择性地设置在金属层和导电柱之间的电介质层。电介质层将第二电迹线与柱电隔离。

7. 发明申请

US20120280767A1 DOUBLE FILM BULK ACOUSTIC RESONATORS WITH ELECTRODE LAYER AND PIEZO-ELECTRIC LAYER THICKNESSES PROVIDING IMPROVED QUALITY FACTOR 有权
标题翻译：双层膜膨胀谐振器，带电极层和PIEZO电层厚度提供改进的质量因子
公开(公告)号：US20120280767A1
公开(公告)日：2012-11-08
申请号：US13101376
申请日：2011-05-05
申请人： Dariusz BURAK , Chris FENG , Alexandre SHIRAKAWA , Stefan BADER
发明人： Dariusz BURAK , Chris FENG , Alexandre SHIRAKAWA , Stefan BADER
IPC分类号： H03H9/56
CPC分类号： H03H9/56 , H03H9/132 , H03H9/205 , H03H9/566 , H03H9/582 , H03H9/585 , H03H9/587 , H03H2003/028
摘要： A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.
摘要翻译：一种器件包括：具有第一电极厚度的第一电极; 设置在所述第一电极上的第一声传播层，所述第一压电层具有第一声传播层厚度; 具有第二电极厚度的第二电极; 设置在所述第一电极上的第二压电层，所述第二压电层具有第二声传播层厚度; 以及具有第三电极厚度的第三电极，其中所述第二电极厚度在所述第一电极厚度的1.15和1.8倍之间。第一和第三电极厚度可以彼此相等，并且第一和第二压电层厚度可以彼此相等。第一和第三电极可以连接在一起以提供彼此平行的两个声谐振器。

8. 发明授权

US08283999B2 Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property 失效
标题翻译：包括包含不均匀声学特性的单一材料声耦合层的体声波谐振器结构
公开(公告)号：US08283999B2
公开(公告)日：2012-10-09
申请号：US12710640
申请日：2010-02-23
申请人： Lueder Elbrecht , Robert Thalhammer
发明人： Lueder Elbrecht , Robert Thalhammer
IPC分类号： H03H9/205 , H03H9/54
CPC分类号： H03H9/584 , H03H9/587
摘要： In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.
摘要翻译：根据代表性实施例，BAW谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 以及第二BAW谐振器，包括设置在第二下电极和第二上电极之间的第二下电极，第二上电极和第二压电层。 BAW谐振器结构还包括设置在第一和第二BAW谐振器之间的单一材料声耦合层。单材料声耦合层包括穿过单材料声耦合层的厚度的不均匀的声学性质。

9. 发明授权

US08280080B2 Microcap acoustic transducer device 有权
标题翻译：微型声学传感器装置
公开(公告)号：US08280080B2
公开(公告)日：2012-10-02
申请号：US12430966
申请日：2009-04-28
申请人： Joel Philliber , John Choy , David Martin
发明人： Joel Philliber , John Choy , David Martin
IPC分类号： H04R25/00 , H04R9/08 , H04R11/04 , H04R17/02 , H04R19/04 , H04R21/02 , H04R1/02
CPC分类号： H04R31/00
摘要： A device includes a first wafer, a second wafer, a gasket bonding the first wafer to the second wafer to define a cavity between the first wafer and the second wafer, and an acoustic transducer disposed on the first wafer and disposed within the cavity between the first wafer and the second wafer. One or more apertures are provided for communicating an acoustic signal between the acoustic transducer and an exterior of the device. An aperture may be formed in the cavity itself, or the cavity may be hermetically sealed. An aperture may be formed completely through the first wafer and located directly beneath at least a portion of the acoustic transducer.
摘要翻译：一种器件包括第一晶片，第二晶片，将第一晶片连接到第二晶片以在第一晶片和第二晶片之间限定空腔的垫圈，以及设置在第一晶片上并设置在第一晶片之间的空腔内的声换能器第一晶片和第二晶片。提供一个或多个孔，用于在声换能器和装置的外部之间传递声信号。可以在空腔本身中形成孔，或者可以将空腔气密地密封。孔可以完全穿过第一晶片形成，并且直接位于声换能器的至少一部分下方。

10. 发明申请

US20120243446A1 MULTI-BAND WIRELESS COMMUNICATION DEVICE WITH MULTIPLEXER AND METHOD OF MULTIPLEXING MULTI-BAND WIRELESS SIGNALS 有权
标题翻译：具有多路复用器的多带无线通信设备和多层无线信号多路复用方法
公开(公告)号：US20120243446A1
公开(公告)日：2012-09-27
申请号：US13071863
申请日：2011-03-25
申请人： William Carrol MUELLER , Ray PARKHURST
发明人： William Carrol MUELLER , Ray PARKHURST
IPC分类号： H04W4/00 , H04J3/00
CPC分类号： H04J1/08 , H04B1/0057 , H04W88/06
摘要： An apparatus includes: a first multiplexer configured to allow bi-directional communication over a first plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the first multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the first multiplexer; a second multiplexer configured to allow bi-directional communication over a second plurality of multiplexed communication bands that each include a corresponding transmit band and a corresponding receive band, wherein none of the transmit bands of the second multiplexer have transmit frequencies that overlap with any receive frequencies of any of the receive bands of the second multiplexer; and an electromechanical band switch configured to selectively connect the first and second multiplexers to a common antenna.
摘要翻译：一种装置包括：第一多路复用器，被配置为允许在包括对应的发射频带和对应的接收频带的第一多个复用的通信频带上进行双向通信，其中第一多路复用器的发射频带中没有一个发射频率重叠具有第一多路复用器的任何接收频带的任何接收频率; 第二多路复用器，被配置为允许在每个包括对应的发射频带和对应的接收频带的第二多路复用通信频带上进行双向通信，其中第二多路复用器的发射频带都不具有与任何接收频率重叠的发射频率的第二多路复用器的接收频带; 以及机电频带开关，被配置为选择性地将第一和第二多路复用器连接到公共天线。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式