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1. 发明申请

US20020048708A1 Method of patterning sub-0.25lambda line features with high transmission, "attenuated" phase shift masks 有权
标题翻译：用高透射“衰减”相移掩模图案化0.25-λ线特征的方法
公开(公告)号：US20020048708A1
公开(公告)日：2002-04-25
申请号：US09976336
申请日：2001-10-15
申请人： ASML MASKTOOLS NETHERLANDS B.V.
发明人： J. Fung Chen , Roger Caldwell , Tom Laidig , Kurt E. Wampler
IPC分类号： G03F009/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/34 , G03F1/36
摘要： A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of nullimaging elements.null The imaging elements are null-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form nullhalftone-likenull imaging patterns. The placement of the ASBs and the width thereof are such that none of the null-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.
摘要翻译：一种制造掩模的方法，该掩模用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上。该方法包括以下步骤：将现有的掩模图案组合成“成像元件”的阵列。成像元件是pi相位偏移的，并被称为抗散射棒（ASB）的非相移和次分辨率元件分开。实质上，ASB用于去除大于最小宽度的掩模特征以形成“半色调”成像图案。 ASB的放置和其宽度使得没有一个pi相移元件是可单独分辨的，但是它们一起形成基本上类似于预期掩模特征的图案。

2. 发明授权

US6114071A Method of fine feature edge tuning with optically-halftoned mask 失效
标题翻译：使用光学半色调掩模的精细特征边缘调整方法
公开(公告)号：US6114071A
公开(公告)日：2000-09-05
申请号：US55355
申请日：1998-04-06
申请人： J. Fung Chen , Kurt E. Wampler , Tom Laidig
发明人： J. Fung Chen , Kurt E. Wampler , Tom Laidig
IPC分类号： G03F1/00 , G03F1/36 , H01L21/027 , G03F9/00
CPC分类号： G03F1/36
摘要： A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.
摘要翻译：一种光刻掩模，用于通过使用光学曝光工具将对应于集成电路的光刻图案从掩模光学转移到半导体衬底上。掩模包括对应于形成集成电路的元件的多个特征以及设置在至少一个特征的边缘上的多个不可分辨的偏置段。

3. 发明授权

US07735052B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 失效
标题翻译：识别极端相互作用间距区域的方法，设计掩模图案和制造掩模的方法，设备制造方法和计算机程序
公开(公告)号：US07735052B2
公开(公告)日：2010-06-08
申请号：US11503302
申请日：2006-08-14
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
摘要翻译：光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。由相邻特征产生的场的相位取决于俯仰以及照明角度。对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

4. 发明申请

US20050034096A1 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
标题翻译：识别极端相互作用间距区域的方法，设计掩模图案和制造掩模的方法，设备制造方法和计算机程序
公开(公告)号：US20050034096A1
公开(公告)日：2005-02-10
申请号：US10938510
申请日：2004-09-13
申请人： Xuelong Shi , Jang Chen , Duan-Fu Hsu
发明人： Xuelong Shi , Jang Chen , Duan-Fu Hsu
IPC分类号： G03F1/08 , G03F7/20 , H01L21/027 , G06F17/50
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
摘要翻译：光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。由相邻特征产生的场的相位取决于俯仰以及照明角度。对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

5. 发明申请

US20040067423A1 Hybrid phase-shift mask 有权
公开(公告)号：US20040067423A1
公开(公告)日：2004-04-08
申请号：US10662365
申请日：2003-09-16
申请人： ASML MASKTOOLS NETHERLANDS B.V.
发明人： Jang Fung Chen , Roger Caldwell , Thomas Laidig , Kurt E. Wampler
IPC分类号： G03F009/00 , G03F007/12
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/34
摘要： A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).

6. 发明申请

US20030098970A1 Method and apparatus for detecting aberrations in a projection lens utilized for projection optics 有权
标题翻译：用于检测用于投影光学器件的投影透镜中的像差的方法和装置
公开(公告)号：US20030098970A1
公开(公告)日：2003-05-29
申请号：US09729695
申请日：2000-12-06
申请人： ASML MASKTOOLS NETHERLANDS B.V.
发明人： J. Fung Chen
IPC分类号： G01B009/00
CPC分类号： G03F7/706
摘要： A method of detecting aberrations associated with a projection lens utilized in an optical lithography system. The method includes the steps of forming a mask for transferring a lithographic pattern onto a substrate, forming a plurality of non-resolvable features disposed on the mask, where the plurality of non-resolvable features are arranged so as to form a predetermined pattern on the substrate, exposing the mask using an optical exposure tool so as to print the mask on the substrate, and analyzing the position of the predetermined pattern formed on the substrate and the position of the plurality of non-resolvable features disposed on the mask so as to determine if there is an aberration. If the position of the predetermined pattern formed on the substrate differs from an expected position, which is determined from the position of the plurality of non-resolvable features, this shift from the expected position indicates the presence of an aberration.
摘要翻译：一种检测与光学光刻系统中使用的投影透镜相关联的像差的方法。该方法包括以下步骤：形成用于将光刻图案转印到基板上的掩模，形成设置在掩模上的多个不可分辨特征，其中布置多个不可分辨特征以便在其上形成预定图案基板，使用光学曝光工具曝光掩模，以便在基板上印刷掩模，并且分析形成在基板上的预定图案的位置和设置在掩模上的多个不可分辨特征的位置，以便确定是否存在像差。如果形成在基板上的预定图案的位置与从多个不可分辨特征的位置确定的期望位置不同，则从预期位置的这种偏移表示存在像差。

7. 再颁专利

USRE40084E1 Optical proximity correction 有权
标题翻译：光学邻近校正
公开(公告)号：USRE40084E1
公开(公告)日：2008-02-19
申请号：US11055790
申请日：2005-02-11
申请人： John S. Petersen , Jang Fung Chen
发明人： John S. Petersen , Jang Fung Chen
IPC分类号： G03F1/00
摘要： Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0th-diffraction-order, equal-line-and-space chromeless phase edges to weak phase-shifters that have some 0th order. Halftoning creates an imbalance in the electric field between the shifted regions, and therefore results in the introduction of the 0th diffraction order.
摘要翻译：利用半色调结构来操纵衍射级的相对大小以最终构建期望的投影图像的方法。在掩模制造商的分辨率极限下，这对于将强偏移，非0阶第二阶衍射级，等距离和空间无色相位边缘转换为弱移相器特别有用，具有一些0 ^{th 顺序。半色调在偏移区域之间产生电场的不平衡，因此导致了第0次衍射级的引入。}

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