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1. 发明授权

US07735052B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 失效
标题翻译：识别极端相互作用间距区域的方法，设计掩模图案和制造掩模的方法，设备制造方法和计算机程序
公开(公告)号：US07735052B2
公开(公告)日：2010-06-08
申请号：US11503302
申请日：2006-08-14
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
摘要翻译：光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。由相邻特征产生的场的相位取决于俯仰以及照明角度。对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

2. 发明授权

US07100145B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
公开(公告)号：US07100145B2
公开(公告)日：2006-08-29
申请号：US10938510
申请日：2004-09-13
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

3. 发明授权

US06792591B2 Method of identifying an extreme interaction pitch region, methods of designing mask patterns and manufacturing masks, device manufacturing methods and computer programs 有权
标题翻译：识别极端相互作用间距区域的方法，设计掩模图案和制造掩模的方法，设备制造方法和计算机程序
公开(公告)号：US06792591B2
公开(公告)日：2004-09-14
申请号：US10083683
申请日：2002-02-27
申请人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Duan-Fu Stephen Hsu
IPC分类号： G06F1750
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.
摘要翻译：光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。由相邻特征产生的场的相位取决于俯仰以及照明角度。对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

4. 发明授权

US07434195B2 Method for performing full-chip manufacturing reliability checking and correction 有权
标题翻译：执行全芯片制造可靠性检查和校正的方法
公开(公告)号：US07434195B2
公开(公告)日：2008-10-07
申请号：US11225888
申请日：2005-09-14
申请人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
发明人： Michael Hsu , Thomas Laidig , Kurt E. Wampler , Duan-Fu Stephen Hsu , Xuelong Shi
IPC分类号： G06F17/50 , G06K9/00 , G03F1/00
CPC分类号： G03F7/705 , G03F1/36 , G03F7/70433 , G03F7/70441
摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.
摘要翻译：一种生成用于成像处理模式的掩模的方法。该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

5. 发明授权

US07820341B2 Method of two dimensional feature model calibration and optimization 有权
标题翻译：二维特征模型校准和优化方法
公开(公告)号：US07820341B2
公开(公告)日：2010-10-26
申请号：US11655868
申请日：2007-01-22
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要翻译：一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

6. 发明授权

US07242459B2 Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated Eigen decomposition model 有权
标题翻译：使用校准的特征分解模型预测和最小化由于曝光工具的混合/匹配造成的OPC偏差的方法
公开(公告)号：US07242459B2
公开(公告)日：2007-07-10
申请号：US11044711
申请日：2005-01-28
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70441 , G03F7/70516 , G03F7/70525
摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
摘要翻译：一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像用于光刻工艺的第二曝光工具。

7. 发明授权

US06519760B2 Method and apparatus for minimizing optical proximity effects 有权
公开(公告)号：US06519760B2
公开(公告)日：2003-02-11
申请号：US09840305
申请日：2001-04-24
申请人： Xuelong Shi , Jang Fung Chen , Stephen Hsu
发明人： Xuelong Shi , Jang Fung Chen , Stephen Hsu
IPC分类号： G06F1750
CPC分类号： G03F7/705 , G03F7/70125 , G03F7/70433 , G03F7/70441
摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

8. 发明授权

US07514183B2 Method for performing transmission tuning of a mask pattern to improve process latitude 失效
标题翻译：用于执行掩模图案的传输调谐以提高处理纬度的方法
公开(公告)号：US07514183B2
公开(公告)日：2009-04-07
申请号：US10981762
申请日：2004-11-05
申请人： Stephen D. Hsu , Jang Fung Chen , Xuelong Shi , Douglas Van Den Broeke
发明人： Stephen D. Hsu , Jang Fung Chen , Xuelong Shi , Douglas Van Den Broeke
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F7/70125 , G03F7/70425 , G03F7/70441
摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.
摘要翻译：一种生成用于光刻工艺的掩模的方法。该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

9. 发明授权

US07175940B2 Method of two dimensional feature model calibration and optimization 有权
公开(公告)号：US07175940B2
公开(公告)日：2007-02-13
申请号：US10266922
申请日：2002-10-09
申请人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
发明人： Thomas Laidig , Jang Fung Chen , Xuelong Shi , Ralph Schlief , Uwe Hollerbach , Kurt E. Wampler
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

10. 发明授权

US08040573B2 Method, program product and apparatus for translating geometrical design rules into boundary conditions in the imaging space so as to define test patterns for use in optical model calibration 有权
标题翻译：用于将几何设计规则转换成成像空间中的边界条件的方法，程序产品和装置，以便定义用于光学模型校准的测试图案
公开(公告)号：US08040573B2
公开(公告)日：2011-10-18
申请号：US11889587
申请日：2007-08-14
申请人： Xuelong Shi , Jang Fung Chen , Douglas Van Den Broeke
发明人： Xuelong Shi , Jang Fung Chen , Douglas Van Den Broeke
IPC分类号： G10K7/06 , H04N1/00
CPC分类号： G03F7/705
摘要： A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.
摘要翻译：确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。该方法包括定义与给定成像过程相关联的设计规则的步骤; 定义表示光学成像系统的成像性能的模型方程; 基于设计规则确定成像信号空间的边界; 基于成像信号空间的边界选择校准图案，使得校准图案位于成像信号空间的边界或边界内; 并存储所选择的校准测试图案，其中使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。

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