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1. 发明申请

US20090208033A1 DIGITAL AUTOMATIC GAIN CONTROL 审中-公开
标题翻译：数字自动增益控制
公开(公告)号：US20090208033A1
公开(公告)日：2009-08-20
申请号：US12356256
申请日：2009-01-20
申请人： Jon Schmidt Kindred , Bryant Sorensen , Jerry Wahl
发明人： Jon Schmidt Kindred , Bryant Sorensen , Jerry Wahl
IPC分类号： H03G3/00
CPC分类号： H03G3/3005 , H03G1/04 , H03G3/301 , H03G7/08 , H04R25/356 , H04R25/505
摘要： Systems, devices, and methods are provided to inhibit apparent amplitude modulation in non-linear processing that causes distortion in a processed signal. One aspect of the invention includes a hearing aid. The hearing aid includes a microphone to receive an input signal, a speaker to reproduce the input signal, and a processor. The processor processes the input signal using a gain. The processor includes an inhibitor, which inhibits distortions, and an adjuster, which adjusts the gain. The inhibitor acts to smooth an envelope of the input signal to inhibit undesired modulation. The adjuster adjusts the gain if the envelope is either above or below a threshold.
摘要翻译：提供了系统，装置和方法来抑制导致处理信号失真的非线性处理中的视在幅度调制。本发明的一个方面包括助听器。助听器包括用于接收输入信号的麦克风，再现输入信号的扬声器和处理器。处理器使用增益处理输入信号。处理器包括抑制失真的抑制剂和调整增益的调节器。抑制剂用于平滑输入信号的包络以抑制不期望的调制。如果信封高于或低于阈值，调节器将调整增益。

2. 发明申请

US20090152725A1 Thick metal interconnect with metal pad caps at selective sites and process for making the same 有权
标题翻译：在选择性位置的金属焊盘盖的金属金属互连和制造相同的工艺
公开(公告)号：US20090152725A1
公开(公告)日：2009-06-18
申请号：US12012121
申请日：2008-01-31
申请人： Hormazdyar Minocher Dalal , Jagdish Prasad , Hocine Bouzid Ziad
发明人： Hormazdyar Minocher Dalal , Jagdish Prasad , Hocine Bouzid Ziad
IPC分类号： H01L23/49
CPC分类号： C23C14/022 , C23C14/165 , C23C14/584 , C23C18/1605 , C23C18/1651 , C23C18/32 , C23C18/54 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/345 , C25D5/022 , H01L21/76804 , H01L21/76834 , H01L21/76837 , H01L21/76885 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/03462 , H01L2224/0347 , H01L2224/04042 , H01L2224/05005 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/05547 , H01L2224/05548 , H01L2224/05562 , H01L2224/05567 , H01L2224/05568 , H01L2224/05572 , H01L2224/05644 , H01L2224/05647 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48465 , H01L2224/4847 , H01L2224/48599 , H01L2224/48644 , H01L2224/48647 , H01L2224/48699 , H01L2224/48744 , H01L2224/48747 , H01L2924/0002 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/1305 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/01022 , H01L2924/00012 , H01L2224/13147 , H01L2224/13144 , H01L2924/00 , H01L2924/00015 , H01L2224/05552
摘要： The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.
摘要翻译：本发明涉及一种高功率IC（集成电路）半导体器件及其制造方法。更具体地，本发明包括高导电性或低电阻金属叠层，以减少在高温下稳定的器件R-on，同时与用于高电流承载能力所需的厚铝线接合并且机械稳定地抵抗使用过程中的振动及其过程。本发明还公开了一种在选择性位置具有金属垫帽的厚金属互连及其制造方法。

3. 发明授权

US07142144B1 Low power sigma delta modulator 有权
标题翻译：低功率Σ-Δ调制器
公开(公告)号：US07142144B1
公开(公告)日：2006-11-28
申请号：US11132705
申请日：2005-05-19
申请人： Neaz Farooqi , Jerry Wahl , Garry Richardson
发明人： Neaz Farooqi , Jerry Wahl , Garry Richardson
IPC分类号： H03M3/00
CPC分类号： H04R25/505 , H03M3/344 , H03M3/416 , H03M3/426 , H04R2460/03
摘要： A low power analog-to-digital channel includes a decimation filter coupled to a sigma-delta modulator. Various embodiments include a decimation filter including an output and a sigma-delta modulator coupled to the output of the decimation filter, where a clock frequency applied to the decimation filter is approximately a integral multiple of a sampling frequency of the sigma delta modulator. In an embodiment, the sigma-delta modulator includes one or more successive approximation converters. In an embodiment, the sigma delta modulator includes one or more area efficient integrators.
摘要翻译：低功率模数 - 数字通道包括耦合到Σ-Δ调制器的抽取滤波器。各种实施例包括抽取滤波器，其包括耦合到抽取滤波器的输出的输出和Σ-Δ调制器，其中施加到抽取滤波器的时钟频率近似为Σ-Δ调制器的采样频率的整数倍。在一个实施例中，Σ-Δ调制器包括一个或多个逐次逼近转换器。在一个实施例中，Σ-Δ调制器包括一个或多个区域有效的积分器。

4. 发明授权

US07141503B2 Methods for manufacturing a soft error and defect resistant pre-metal dielectric layer 有权
标题翻译：用于制造软误差和缺陷的金属前介电层的方法
公开(公告)号：US07141503B2
公开(公告)日：2006-11-28
申请号：US10877482
申请日：2004-06-25
申请人： John Naughton , Mark M. Nelson
发明人： John Naughton , Mark M. Nelson
IPC分类号： H01L21/302
CPC分类号： H01L21/02274 , H01L21/02129 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/3105 , H01L21/31625 , H01L21/76801 , H01L21/76819 , H01L21/76822 , H01L21/76828 , H01L21/76832
摘要： A method for forming a pre-metallization layer on an underlying micro-structure, and a corresponding micro-structure formed by the method. The micro-structure may be a semiconductor circuit and/or a Micro-Electro-Mechanical Systems (MEMS) device. A first layer of undoped silicate glass is deposited on a micro-structure. Then, a layer of phospho silicate glass is deposited on the first layer of undoped silicate glass. This combination is then densified by applying a temperature to the combination that is sufficient to densify the layer of phospho-silicate glass, while being below the glass flow temperature. After densification, a second layer of undoped silicate glass is deposited on the densified layer of phospho silicate glass. Finally, the upper surface of the second layer of undoped silicate glass is polished using a chemical mechanical polishing process. The result is a dielectric layer of high density and low stress, and that reduces soft errors and defects.
摘要翻译：一种在下面的微结构上形成预金属化层的方法，以及通过该方法形成的相应的微结构。微结构可以是半导体电路和/或微机电系统（MEMS）装置。第一层未掺杂的硅酸盐玻璃沉积在微结构上。然后，在第一层未掺杂的硅酸盐玻璃上沉积磷酸硅酸盐玻璃层。然后通过将温度施加到足以使磷酸硅酸盐玻璃层致密化的温度，同时低于玻璃流动温度来使该组合致密化。致密化后，第二层未掺杂的硅酸盐玻璃沉积在磷酸硅酸盐玻璃的致密化层上。最后，使用化学机械抛光工艺抛光第二层未掺杂的硅酸盐玻璃的上表面。结果是高密度和低应力的介电层，减少了软错误和缺陷。

5. 发明授权

US07139403B2 Hearing aid with digital compression recapture 有权
公开(公告)号：US07139403B2
公开(公告)日：2006-11-21
申请号：US10041698
申请日：2002-01-08
申请人： Garry Richardson , Jerry Wahl
发明人： Garry Richardson , Jerry Wahl
IPC分类号： H03G3/00 , H04R25/00
CPC分类号： H03G3/3005 , H03G1/04 , H03G3/301 , H03G7/08 , H04R25/356 , H04R25/505
摘要： Systems, devices, and methods are provided to inhibit apparent amplitude modulation in non-linear processing that causes distortion in a processed signal. One aspect of the invention includes a hearing aid. The hearing aid includes a microphone to receive an input signal, a speaker to reproduce the input signal, and a processor. The processor processes the input signal using a gain. The processor includes an inhibitor, which inhibits distortions, and an adjuster, which adjusts the gain. The inhibitor acts to smooth an envelope of the input signal to inhibit undesired modulation. The adjuster adjusts the gain if the envelope is either above or below a threshold. The hearing aid further includes a compression recapture system to supply the compressed portion of the input signal to more closely reproduce the actual input signal.

6. 发明授权

US07050966B2 Sound intelligibility enhancement using a psychoacoustic model and an oversampled filterbank 有权
标题翻译：使用心理声学模型和过采样滤波器组的声音清晰度增强
公开(公告)号：US07050966B2
公开(公告)日：2006-05-23
申请号：US10214056
申请日：2002-08-07
申请人： Todd Schneider , David Coode , Robert L. Brennan , Peter Olijnyk
发明人： Todd Schneider , David Coode , Robert L. Brennan , Peter Olijnyk
IPC分类号： G10L11/06
CPC分类号： G10L21/0208 , G10L19/0204 , G10L19/0212 , G10L21/0264 , G10L21/0364 , G10L2021/02168 , H04R25/356 , H04R2499/13
摘要： A system and method of improving signal intelligibility over an interference signal is provided. The system includes a psychoacoustic professor having a psychoacoustic model wherein the level of a signal-of-interest is improved so as to be audible above noise and so as not to exceed a predetermined maximum output level. The system can be combined with active noise cancellation.
摘要翻译：提供了一种提高干扰信号上的信号清晰度的系统和方法。该系统包括具有心理声学模型的心理声学教授，其中改善感兴趣信号的电平以便在噪声之上听到并且不超过预定的最大输出电平。该系统可以与主动噪声消除相结合。

7. 发明授权

US07034574B1 Low-voltage differential signal (LVDS) transmitter with high signal integrity 有权
标题翻译：具有高信号完整性的低压差分信号（LVDS）变送器
公开(公告)号：US07034574B1
公开(公告)日：2006-04-25
申请号：US10920009
申请日：2004-08-17
申请人： Zhongmin Li
发明人： Zhongmin Li
IPC分类号： H03K19/0175
CPC分类号： H04L25/028 , H04L25/0272
摘要： A differential signal output driver circuit having four switching transistors and having a bias transistor that shields each of the switching transistors from the corresponding output terminal thereby blocking the Miller capacitance of the switching capacitor from generating overshoot or undershoot in the output differential voltage. Also, the output driver circuit may be driven by a differential skew cancellation circuit that generates a balanced differential signal to drive the switching transistors to further improve signal integrity. The signal path for generating each signal in the differential signal goes through a similar structure thereby ensuring similar slew in each differential signal provided to the output driver circuit.
摘要翻译：具有四个开关晶体管并具有偏置晶体管的差分信号输出驱动器电路，该偏置晶体管将每个开关晶体管与相应的输出端屏蔽，从而阻止开关电容器的米勒电容在输出差分电压中产生过冲或下冲。此外，输出驱动器电路可以由产生平衡差分信号的差分偏斜消除电路驱动，以驱动开关晶体管以进一步改善信号完整性。用于产生差分信号中的每个信号的信号路径经过类似的结构，从而确保提供给输出驱动器电路的每个差分信号中的类似的转换。

8. 发明授权

US07016507B1 Method and apparatus for noise reduction particularly in hearing aids 失效
标题翻译：用于降噪的方法和装置，特别是在助听器中
公开(公告)号：US07016507B1
公开(公告)日：2006-03-21
申请号：US09060825
申请日：1998-04-16
申请人： Robert Brennan
发明人： Robert Brennan
IPC分类号： A61F11/06 , G10K11/16 , H03B29/00
CPC分类号： H03G9/025 , H03G7/06 , H03G9/005 , H04R3/00 , H04R25/356 , H04R25/505 , H04R25/70 , H04R2225/77
摘要： This invention describes a practical application of noise reduction in hearing aids. Although listening in noisy conditions is difficult for persons with normal hearing, hearing impaired individuals are at a considerable further disadvantage. Under light noise conditions, conventional hearing aids amplifying the input signal sufficiently to overcome the hearing loss. For a typical sloping hearing loss where there is a loss in high frequency hearing sensitivity, the amount of boost (or gain) rises with frequency. Most frequently, the loss in sensitivity is only for low-level signals; high level signals are affective minimally or not at all. A compression hearing aid is able to compensate by automatically lowering the gain as the input signal level rises. This compression action is usually compromised under noisy conditions. In general, hearing aids are of lesser benefit under noisy conditions since both noise and speech are boosted together when what is really required is a reduction of the noise relative to the speech. A noise reduction algorithm with the dual purpose of enhancing speech relative to noise and also providing a relatively clean signal for the compression circuitry is described.
摘要翻译：本发明描述了助听器中降噪的实际应用。尽管在嘈杂的条件下听觉听力很难听觉受损，但听力受损的个体却处于相当的进一步劣势之中。在轻微噪音条件下，常规的助听器可充分放大输入信号，以克服听力损失。对于典型的倾斜听力损失，其中高频听力敏感性有损失，升压量（或增益）随着频率而上升。最常见的是，灵敏度的损失只适用于低电平信号; 高级别的信号在最低限度或者根本不是情感上。压缩助听器能够通过在输入信号电平升高时自动降低增益来补偿。这种压缩作用通常在嘈杂条件下受到损害。一般来说，助听器在嘈杂条件下的益处较小，因为当真正需要的是减少相对于语音的噪音时，噪音和语音都会被提升在一起。描述了具有增强语音相对于噪声并且还为压缩电路提供相对干净的信号的双重目的的降噪算法。

9. 发明授权

US07009444B1 Temperature stable voltage reference circuit using a metal-silicon Schottky diode for low voltage circuit applications 有权
标题翻译：温度稳定的电压基准电路采用金属硅肖特基二极管作低压电路应用
公开(公告)号：US07009444B1
公开(公告)日：2006-03-07
申请号：US10770233
申请日：2004-02-02
申请人： Greg Scott
发明人： Greg Scott
IPC分类号： G05F1/10
CPC分类号： G05F3/30
摘要： Silicon-based voltage reference circuits that generate a temperature independent voltage reference that is less than even the silicon bandgap potential. The voltage reference circuit includes a diode-connected metal-silicon Schottky diode that is biased with a current. In this configuration, the anode terminal of the Schottky diode is a CTAT voltage source in this configuration. The anode terminal has a voltage at zero degrees Kelvin at the barrier height of the Schottky diode, which may differ depending on the metal chosen, but in most cases is less than the bandgap potential of silicon. The voltage reference circuit also includes a PTAT voltage source. The PTAT voltage may be generated in a variety of ways. An amplifier amplifies the PTAT voltage, and a summer adds the CTAT voltage to the amplified PTAT voltage to generate the temperature stable voltage reference.
摘要翻译：基于硅的电压参考电路，其产生小于甚至硅带隙电位的独立于温度的参考电压。电压参考电路包括用电流偏置的二极管连接的金属硅肖特基二极管。在该结构中，在该结构中，肖特基二极管的阳极端子是CTAT电压源。阳极端子在肖特基二极管的势垒高度处具有零开尔文的电压，其可以根据所选择的金属而不同，但是在大多数情况下小于硅的带隙电位。电压参考电路还包括PTAT电压源。 PTAT电压可以以各种方式产生。放大器放大PTAT电压，并且加法器将CTAT电压加到放大的PTAT电压以产生温度稳定的电压基准。

10. 发明授权

US06867640B2 Double-sided extended drain field effect transistor, and integrated overvoltage and reverse voltage protection circuit that uses the same 有权
标题翻译：双面扩展漏极场效应晶体管，集成过电压和反向电压保护电路使用相同
公开(公告)号：US06867640B2
公开(公告)日：2005-03-15
申请号：US10611714
申请日：2003-07-01
申请人： Greg Scott , J. Marcos Laraia
发明人： Greg Scott , J. Marcos Laraia
IPC分类号： H01L27/02 , G05F1/10 , G05F3/02
CPC分类号： H01L27/0266
摘要： An integrated overvoltage and reverse voltage protection circuit that includes two p-channel double-sided extended drain transistors coupled to a high voltage source, each having their n-well coupled through a resistor to the high voltage source. For voltage regulation, a voltage divider is coupled in series with a first of these transistors, while the drain of the second transistor is coupled to the gate of the first transistor. For voltage blocking, the voltage divider may span the entire supply voltage. An n-channel transistor couples the second p-channel transistor to a low voltage source. A middle node in the voltage divider is coupled to one input of a comparator, with a reference voltage coupled to the second input. The comparator output drives the gate terminal of the n-channel transistor. A load to be protected may be disposed in parallel with the voltage divider.
摘要翻译：集成的过压和反向电压保护电路，其包括耦合到高电压源的两个p沟道双侧延伸漏极晶体管，每个具有通过电阻器连接到高电压源的n阱。对于电压调节，分压器与这些晶体管中的第一个串联耦合，而第二晶体管的漏极耦合到第一晶体管的栅极。对于电压阻塞，分压器可能跨越整个电源电压。 n沟道晶体管将第二p沟道晶体管耦合到低电压源。分压器中的中间节点耦合到比较器的一个输入端，参考电压耦合到第二输入端。比较器输出驱动n沟道晶体管的栅极端子。要保护的负载可以与分压器并联设置。

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